一个评估多重等离子体过程累积氧化损伤的模型

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843941

K. Noguchi, A. Matsumoto, N. Oda

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引用次数: 14

摘要

本文报道了一个评价多重等离子体过程引起的累积氧化损伤的模型。考虑了充电电流与天线尺寸的关系，对不同天线配置下MOS器件的损伤进行了评估，并与实测数据进行了比较。结果表明，等离子体充电电流是天线尺寸的次线性函数。由于这一特性，当天线在多层天线导体之间共用时，累积的氧化物损伤比简单的总和要小。提出了一种改进的天线规则，得到了一种符合实际的天线设计准则。

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A model for evaluating cumulative oxide damage from multiple plasma processes

This paper reports a model for evaluating the cumulative oxide damage caused by multiple plasma processes. By considering dependence of the charging current on the antenna size, the damage to a MOS device with various antenna configurations is evaluated, and is compared with the measured data. It is shown that the plasma charging current is a sub-linear function of the antenna size. Because of this characteristic, cumulative oxide damage becomes smaller than a simple sum when the antenna is shared among multiple layers of antenna conductors. A modified antenna rule is proposed, and a realistic antenna design guideline is obtained.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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