J. Dunn, D. Harame, S. St. Onge, A. Joseph, N. Feilchenfeld, K. Watson, S. Subbanna, G. Freeman, S. Voldman, D. Ahlgren, R. Johnson
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Trends in silicon germanium BiCMOS integration and reliability
A base-after-gate integration scheme has been developed fora 0.25 /spl mu/m SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using SiGe for applications with high collector-base voltage with high emitter current are also explored. Finally, the ESD characteristics of the SiGe BiCMOS technology elements are summarized.
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