{"title":"氧化击穿场加速——精确的阳极孔注入模型能否解决E与1/E的争议?","authors":"M. A. Alam, J. Bude, A. Ghetti","doi":"10.1109/RELPHY.2000.843886","DOIUrl":null,"url":null,"abstract":"A simple model, based on the concept of Anode Hole Injection, explains a number of puzzling measurements of oxide lifetime as a function of applied voltage. We provide systematic explanations of these measurements, and explore its implications for gate oxide reliability.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"109","resultStr":"{\"title\":\"Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?\",\"authors\":\"M. A. Alam, J. Bude, A. Ghetti\",\"doi\":\"10.1109/RELPHY.2000.843886\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple model, based on the concept of Anode Hole Injection, explains a number of puzzling measurements of oxide lifetime as a function of applied voltage. We provide systematic explanations of these measurements, and explore its implications for gate oxide reliability.\",\"PeriodicalId\":6387,\"journal\":{\"name\":\"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"109\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2000.843886\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2000.843886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?
A simple model, based on the concept of Anode Hole Injection, explains a number of puzzling measurements of oxide lifetime as a function of applied voltage. We provide systematic explanations of these measurements, and explore its implications for gate oxide reliability.