Trends in silicon germanium BiCMOS integration and reliability

Abstract

A base-after-gate integration scheme has been developed fora 0.25 /spl mu/m SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using SiGe for applications with high collector-base voltage with high emitter current are also explored. Finally, the ESD characteristics of the SiGe BiCMOS technology elements are summarized.