一次性可编程漂移防熔丝电池可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843909

Philippe Candelier, Nathalie Villani, J. Schoellkopf, Patrick Mortini

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引用次数: 24

摘要

提出了一种新型的基于栅极氧化物击穿的非易失性存储单元。与标准CMOS工艺的完全兼容性和每个单元有限的编程电流使漂移防熔丝成为低成本和密集的非易失性存储解决方案。并给出了器件结构和设计优化的结果。

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One time programmable drift antifuse cell reliability

An innovative non-volatile memory cell based on gate oxide breakdown is presented. The full compatibility with a standard CMOS process and the limited programming current per cell make the drift antifuse a low cost and dense non-volatile storage solution. Reliable storage is demonstrated and results from both device architecture and design optimization are given.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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