Iet Circuits Devices & Systems最新文献_第3页

Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip 利用p+袋和金属带提高无连接隧道场效应晶体管的可靠性和射频性能

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-07-06 DOI: 10.1049/cds2.12162

Alireza Zirak

{"title":"Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip","authors":"Alireza Zirak","doi":"10.1049/cds2.12162","DOIUrl":"https://doi.org/10.1049/cds2.12162","url":null,"abstract":"In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications. Due to the insertion of a p+ pocket in source/channel junction and the use of metal strip in oxide layer, the following properties of the proposed JLTFET are resulted. First, the tunnelling barrier width is reduced in the source/channel junction thereby, electrons easily tunnel from the source to the channel. Second, the hole concentration (empty state) in the channel is increased, leading to higher electron contribution in the tunnelling process. These improvements are useful in achieving high drain current and steep subthreshold swing. As a result, the maximum ON current of 4.4 × 10−5 A/μm and average subthreshold swing of 40 mV/decade are obtained from simulation results. Moreover, as compared to conventional JLTFET, the proposed JLTFET provides improvements in reliability and analogue/radio frequency (RF) performance.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 4","pages":"235-243"},"PeriodicalIF":1.3,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12162","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50122711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A chipless light switch for smart-homes 用于智能家居的无芯片电灯开关

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-07-06 DOI: 10.1049/cds2.12163

Abdullah S. Almansouri

引用次数: 1

Retracted 缩回

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-07-04 DOI: 10.1049/cds2.12164

引用次数: 4

A hardware prototype of wideband high-dynamic range analog-to-digital converter 宽带高动态范围模数转换器的硬件原型

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-06-26 DOI: 10.1049/cds2.12156

Satish Mulleti, Eliya Reznitskiy, Shlomi Savariego, Moshe Namer, Nimrod Glazer, Yonina C. Eldar

{"title":"A hardware prototype of wideband high-dynamic range analog-to-digital converter","authors":"Satish Mulleti, Eliya Reznitskiy, Shlomi Savariego, Moshe Namer, Nimrod Glazer, Yonina C. Eldar","doi":"10.1049/cds2.12156","DOIUrl":"https://doi.org/10.1049/cds2.12156","url":null,"abstract":"Key parameters of analog-to-digital converters (ADCs) are their sampling rate and dynamic range. Power consumption and cost of an ADC are directly proportional to the sampling rate; hence, it is desirable to keep it as low as possible. The dynamic range of an ADC also plays an important role, and ideally, it should be greater than the signal's; otherwise, the signal will be clipped. To avoid clipping, modulo folding can be used before sampling, followed by an unfolding algorithm to recover the true signal. Here, the authors present a modulo hardware prototype that can be used before sampling to avoid clipping. The authors’ modulo hardware operates prior to the sampling mechanism and can fold higher frequency signals compared to existing hardware. The authors present a detailed design of the hardware and also address key issues that arise during implementation. In terms of applications, the authors show the reconstruction of finite-rate-of-innovation signals, which are beyond the dynamic range of the ADC. The authors’ system operates at six times below the Nyquist rate of the signal and can accommodate eight times larger signals than the ADC's dynamic range.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 4","pages":"181-192"},"PeriodicalIF":1.3,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12156","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50144906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A high-capacity and nonvolatile spintronic associative memory hardware accelerator 一种高容量非易失性自旋电子联想存储器硬件加速器

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-06-21 DOI: 10.1049/cds2.12160

Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari

{"title":"A high-capacity and nonvolatile spintronic associative memory hardware accelerator","authors":"Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari","doi":"10.1049/cds2.12160","DOIUrl":"https://doi.org/10.1049/cds2.12160","url":null,"abstract":"Significant progress has been made in manufacturing emerging technologies in recent years. This progress implemented in-memory-computing and neural networks, one of today's hottest research topics. Over time, the need to process complex tasks has increased. This need causes the emergence of intelligent processors. A nonvolatile associative memory based on spintronic synapses utilising magnetic tunnel junction (MTJ) and carbon nanotube field-effect transistors (CNTFET)-based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility. At the same time, CNTFET has overcome conventional complementary metal-oxide-semiconductor shortcomings like the short channel effect, drain-induced barrier lowering, and poor hole mobility. The proposed design is simulated in the presence of process variations. The proposed design aims to increase the number of weights generated in the synapse for higher memory capacity and accuracy. The effect of different tunnel magnetoresistance (TMR) values (100%, 200%, and 300%) on the performance and accuracy of the proposed design has also been investigated. This investigation shows that the proposed design performs well even with a low TMR value, which is very important and remarkable from the fabrication point of view.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 4","pages":"205-212"},"PeriodicalIF":1.3,"publicationDate":"2023-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12160","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50153076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A compact frequency reconfigurable beam switching antenna based on a single-layer FSS 一种基于单层FSS的紧凑型频率可重构波束切换天线

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-05-09 DOI: 10.1049/cds2.12157

Guang Li, Yangyang Ye, Fushun Zhang

{"title":"A compact frequency reconfigurable beam switching antenna based on a single-layer FSS","authors":"Guang Li, Yangyang Ye, Fushun Zhang","doi":"10.1049/cds2.12157","DOIUrl":"https://doi.org/10.1049/cds2.12157","url":null,"abstract":"A compact frequency reconfigurable beam switching antenna based on a single-layer frequency selective face (FSS) is proposed in this paper. The proposed antenna consists of a dual-band dipole antenna and a single-layer FSS with hexagonally arrangement. The omnidirectional radiation pattern of the dipole antenna designed as a radiation source and surrounded by the FSS can be converted into directional radiation pattern sweeping along the entire azimuthal plane at two single frequency of 2.4 or 5 GHz. The frequency selection is achieved by controlling the diode state of the FSS unit, and the beam switching is realised by a specific combination of electromagnetic wave reflection or transmission from the hexagonal FSS. The novelty lies in applying the hexagonal arrangement to a dual single-frequency single-layer FSS unit. This will not destroy the reflection or transmission characteristics of the FSS unit, but also contribute to reduce the antenna size and achieve a low cost. To validate the design, a prototype is fabricated and measured. The single-layer FSS antenna with a volume of 57 mm × 57 mm × 58.5 mm can be scanned in 12 steps along the azimuth plane at 2.4 and 5 GHz, respectively.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 4","pages":"193-198"},"PeriodicalIF":1.3,"publicationDate":"2023-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12157","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50144497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

500 V breakdown voltage in β-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit 108 MW/cm2功率因数的β-Ga2O3横向扩散金属氧化物半导体场效应晶体管的500 V击穿电压

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-05-03 DOI: 10.1049/cds2.12158

Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

{"title":"500 V breakdown voltage in β-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit","authors":"Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi","doi":"10.1049/cds2.12158","DOIUrl":"https://doi.org/10.1049/cds2.12158","url":null,"abstract":"The authors’ present a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with β-Ga2O3 , which is a large bandgap semiconductor (β-LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. The fundamental purpose is to use a β-Ga2O3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of β-LDMOSFET are analysed to those of standard LDMOSFET, such as VBR, ON-resistance (RON), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate-drain capacitance (CGD), gate-source capacitance (CGS), transit frequency (fT), and maximum frequency of oscillation (fMAX) have been investigated. The β-LDMOSFET structure outperforms performance in the VBR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested β-LDMOSFET has RON ~ 2.3 mΩ.cm−2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2. All the simulations are done with TCAD and simulation models are calibrated with the experimental data.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 4","pages":"199-204"},"PeriodicalIF":1.3,"publicationDate":"2023-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12158","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50119060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Quasi-fixed frequency controlled phase modulation LCC resonant converter with a wide power range 宽功率范围准定频相位调制LCC谐振变换器

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-04-03 DOI: 10.1049/cds2.12155

Ying Feng, Dejun Kong

{"title":"Quasi-fixed frequency controlled phase modulation LCC resonant converter with a wide power range","authors":"Ying Feng, Dejun Kong","doi":"10.1049/cds2.12155","DOIUrl":"https://doi.org/10.1049/cds2.12155","url":null,"abstract":"The research on LCC resonant converters has become increasingly popular since the application of the zero-voltage switching can improve the transmission ability and ensure the high efficiency of the power supplies. In this article, a novel quasi-definite frequency-based modulation control method to extend the excellent properties of LCC resonators to a wide range of powers is introduced. By adjusting the frequency and phase in a bidirectional manner in accordance with the design law, excellent output performance can be maintained over a wide power range, which is overcome by adjusting the switching frequency and phase separately in conventional modulation methods. In order to justify the effectiveness of the proposed modulation control method, a simulation and experimental platform of LCC resonators using the proposed modulation method was performed. Simulation and experimental results can effectively demonstrate the performance of the proposed modulation control method for a variety of input voltage and output power cases, and the efficiency of the LCC converters will be improved in higher power systems.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 3","pages":"160-173"},"PeriodicalIF":1.3,"publicationDate":"2023-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12155","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50118974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Construction of visual evaluation system for building block night scene lighting based on multi-target recognition and data processing 基于多目标识别和数据处理的建筑砌块夜景照明视觉评价系统的构建

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-02-22 DOI: 10.1049/cds2.12154

Xiaojian Wang, Xiaoye Sun, Zixuan Wang

{"title":"Construction of visual evaluation system for building block night scene lighting based on multi-target recognition and data processing","authors":"Xiaojian Wang, Xiaoye Sun, Zixuan Wang","doi":"10.1049/cds2.12154","DOIUrl":"https://doi.org/10.1049/cds2.12154","url":null,"abstract":"The rapid development of night tourism economy has made people's demand for night scene lighting in architectural blocks increasing, and the night scene lighting situation of urban architectural blocks has gradually received people's attention and attention. Achieving good night lighting visual effects of building blocks can not only meet the needs of residents for entertainment and consumption at night, but also beautify the image of blocks and promote the economic development of building blocks. However, due to the unreasonable planning and management of the night scene lighting design of architectural blocks in some areas, improper application of night scene lighting, and overly commercial night scene lighting effects, it affects people's normal night activity needs and has a negative impact on the long-term block economy of the region. Faced with this situation, the night lighting of architectural blocks and its problems is studied and photos are identified with high lighting visual effect evaluation using multi-target identification and data processing to construct a night lighting visual evaluation system for architectural blocks, and also an experimental study of the visual evaluation system is conducted. The results show that the overall visual suitability evaluation support rate of the respondents for the night scene lighting of architectural blocks is 95.64%, and the visual evaluation system proposed in this paper is reasonable and effective, which is conducive to promoting the improvement of the visual effect of night scene lighting in architectural blocks.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 3","pages":"149-159"},"PeriodicalIF":1.3,"publicationDate":"2023-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12154","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50149389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comprehensive survey of ternary full adders: Statistics, corrections, and assessments 三进制全加器的综合调查：统计、校正和评估

IF 1.3 4区工程技术

Iet Circuits Devices & Systems Pub Date : 2023-02-14 DOI: 10.1049/cds2.12152

Sarina Nemati, Mostafa Haghi Kashani, Reza Faghih Mirzaee

{"title":"Comprehensive survey of ternary full adders: Statistics, corrections, and assessments","authors":"Sarina Nemati, Mostafa Haghi Kashani, Reza Faghih Mirzaee","doi":"10.1049/cds2.12152","DOIUrl":"https://doi.org/10.1049/cds2.12152","url":null,"abstract":"The history of ternary adders goes back to more than 6 decades ago. Since then, a multitude of ternary full adders (TFAs) have been presented in the literature. This article conducts a review of TFAs so that one can be familiar with the utilised design methodologies and their prevalence. Moreover, despite numerous TFAs, almost none of them are in their simplest form. A large number of transistors could have been eliminated by considering a partial TFA instead of a complete one. According to our investigation, only 28.6% of the previous designs are partial TFAs. Also, they could have been simplified even further by assuming a partial TFA with an output carry voltage of 0 V or VDD. This way, in a single-VDD design, voltage division inside the Carry generator part would have been eliminated and less power dissipated. As far as we have searched, there are only three partial TFAs with this favourable condition in the literature. Additionally, most of the simulation setups in the previous articles are not realistic enough. Therefore, the simulation results reported in these papers are neither comparable nor entirely valid. Therefore, the authors got motivated to conduct a survey, elaborate on this issue, and enhance some of the previous designs. Among 84 papers, 10 different TFAs (from 11 papers) are selected, simplified, and simulated in this article. Simulation results by HSPICE and 32 nm carbon nanotube FET technology reveal that the simplified partial TFAs outperform their original versions in terms of delay, power, and transistor count.","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"17 3","pages":"111-134"},"PeriodicalIF":1.3,"publicationDate":"2023-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12152","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50132344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3