Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip

In this article, a new p⁺ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications. Due to the insertion of a p⁺ pocket in source/channel junction and the use of metal strip in oxide layer, the following properties of the proposed JLTFET are resulted. First, the tunnelling barrier width is reduced in the source/channel junction thereby, electrons easily tunnel from the source to the channel. Second, the hole concentration (empty state) in the channel is increased, leading to higher electron contribution in the tunnelling process. These improvements are useful in achieving high drain current and steep subthreshold swing. As a result, the maximum ON current of 4.4 × 10⁻⁵ A/μm and average subthreshold swing of 40 mV/decade are obtained from simulation results. Moreover, as compared to conventional JLTFET, the proposed JLTFET provides improvements in reliability and analogue/radio frequency (RF) performance.