Iet Circuits Devices & Systems最新文献

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Design and Simulation of a Wideband 3-Bit Phase Shifter for 4.5–5.5 GHz Applications 4.5-5.5 GHz宽带3位移相器的设计与仿真
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-29 DOI: 10.1049/cds2/5377138
Sena Taş, Fırat Kaçar
{"title":"Design and Simulation of a Wideband 3-Bit Phase Shifter for 4.5–5.5 GHz Applications","authors":"Sena Taş,&nbsp;Fırat Kaçar","doi":"10.1049/cds2/5377138","DOIUrl":"10.1049/cds2/5377138","url":null,"abstract":"<p>In this article, a phase shifter circuit designed for next-generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3-bit all-pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values derived from the MATLAB simulations. A switch capacitor is employed as the switching element within the circuit. For phase shifts of 45°, 90°, and 180°, the phase errors are 3°, 9°, and 0°, respectively, while the power losses are 1.5 dB, 3 dB, and 1.9 dB, respectively.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2/5377138","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145224342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-29
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引用次数: 0
A Review of Performance and Reliability Issues in D Flip-Flops for Future Artificial Intelligence and Internet of Things Applications 面向未来人工智能和物联网应用的D触发器性能和可靠性问题综述
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-26 DOI: 10.1049/cds2/7132642
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal
{"title":"A Review of Performance and Reliability Issues in D Flip-Flops for Future Artificial Intelligence and Internet of Things Applications","authors":"Syeda Hurmath Juveria,&nbsp;R. Shashank,&nbsp;J. Ajayan,&nbsp;Amit Krishna Dwivedi,&nbsp;D. Nirmal","doi":"10.1049/cds2/7132642","DOIUrl":"10.1049/cds2/7132642","url":null,"abstract":"<p>In this paper, various D flip-flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional-bridging FF (CBFF)-S, self-shut-off pulsed latch (SSPL), retentive true signal phased clock (R-TSPC), mTGFF, mC2MOS, FS-TSPC-DET-FF, and P-FF, are briefly reviewed for different architectures and technologies, with the trade-off between the various performance parameters discussed in this paper. Comparative analysis is done for the selected DFFs on technology, supply voltage, set-up time, delay, power consumption, and area. Reliability effects on DFFs and aging effect on FFs are reviewed for timing yield-aware lifetime reliability (TYR) based on the process variations (PVs) and bias temperature instability (BTI). A brief review on applications of DFFs in internet of thing (IoT) devices and artificial intelligence (AI), such as frequency divider, dual-modulus prescaler, time-to-digital converter (TDC), shifter, and synchronizer, is also presented.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2/7132642","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145146600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-26
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引用次数: 0
Generic PEH Interface Circuit With an Improved Environmental Adaptivity Using a Post Implementation Calibration Technique 采用后校正技术改进环境适应性的通用PEH接口电路
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-26 DOI: 10.1049/cds2/9226422
Saman Shoorabi Sani
{"title":"Generic PEH Interface Circuit With an Improved Environmental Adaptivity Using a Post Implementation Calibration Technique","authors":"Saman Shoorabi Sani","doi":"10.1049/cds2/9226422","DOIUrl":"10.1049/cds2/9226422","url":null,"abstract":"<p>This study presents a novel triple-step bias-flip rectifier with a post implementation calibration (PIC) scheme to address both the need for a general-purpose adaptable piezoelectric energy harvester (PEH) interface circuit (PEHIC) and the PVT-related issues while maintaining acceptable efficiency and a smaller inductor. Due to the PIC, the proposed circuit is adaptable to various piezoelectric materials and inductors. Using a 100-µH inductor, a 180 nm standard design kit, and an energy investing (EI) scheme, the proposed rectifier achieves a bias flip efficiency of 100%. Without EI, the proposed circuit achieves the recently reported high bias flip efficiency, that is, <i>ɳ</i><sub>flip</sub>, in the literature with a considerably smaller inductor. According to simulation results, the improvement of the designed circuit relative to the full bridge rectifier (FBR) falls within the scope of 2–3.8. Postsimulation calculations revealed that the figure of merit of adaptivity, that is, FoM<sub>adaptivity</sub>, of the proposed circuit is approximately 83.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2/9226422","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145146601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-26
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引用次数: 0
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-16
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148079156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Network Reconfiguration Approach for Service Restoration Based on a Novel and Multiobjective Optimization Method 基于新型多目标优化方法的服务恢复网络重构方法
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-09-16 DOI: 10.1049/cds2/1992253
Iman Nik, Majid Halaji, Mohammad Hossein Yazdi, Javad Safehian, Ali Asghar Shojaei
{"title":"A Network Reconfiguration Approach for Service Restoration Based on a Novel and Multiobjective Optimization Method","authors":"Iman Nik,&nbsp;Majid Halaji,&nbsp;Mohammad Hossein Yazdi,&nbsp;Javad Safehian,&nbsp;Ali Asghar Shojaei","doi":"10.1049/cds2/1992253","DOIUrl":"10.1049/cds2/1992253","url":null,"abstract":"<p>Restoring load following partial outages or local faults in a section of the distribution system, as addressed in this study, is crucial to minimizing service interruptions and financial damages. Reconfiguring the network is a crucial first step in load restoration. The presence of distributed generation (DG) units, in addition to the reconfiguration of the distribution network, can be very effective in the load recovery process. Therefore, in this study, the problem of reconfiguring the distribution network in the presence of DG units and charging stations of electric vehicles with the goals of reducing energy not supplied (ENS) and losses has been solved. The suggested problem is resolved by introducing and putting into practice the hybrid particle swarm optimization and shuffled frog leaping (HPSO-SFL) algorithm, which is based on hybrid swarm intelligence. The effectiveness and accuracy of the proposed method are validated using a 33-bus test system under multiple scenarios. To assess its performance, the results are compared against those reported in previous studies. Following network reconfiguration, the power losses were reduced by 45% without DG and by 77% with DG, relative to the initial system state. Furthermore, when electric vehicle charging stations (EVCSs), modeled as active loads, were included in the optimization process, power losses decreased by approximately 23% compared to the pre-reconfiguration condition.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2/1992253","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145101633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving FinFET Device Parameters Through an Integrated Method of Particle Swarm and Whale Optimization Techniques 基于粒子群和鲸鱼优化技术的改进FinFET器件参数
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-08-28 DOI: 10.1049/cds2/7035085
Vijayalaxmi Kumbar, Manisha Waje
{"title":"Improving FinFET Device Parameters Through an Integrated Method of Particle Swarm and Whale Optimization Techniques","authors":"Vijayalaxmi Kumbar,&nbsp;Manisha Waje","doi":"10.1049/cds2/7035085","DOIUrl":"10.1049/cds2/7035085","url":null,"abstract":"<p>The geometrical parameters of the fin-shaped field-effect transistor (FinFET) significantly affect the outcomes of the FinFET-based designs. Various machine learning (ML) schemes have been presented to optimize the geometrical parameters of the FinFET devices to limit the adverse effect of scaling. This paper presents the FinFET width and height optimization using the proposed hybrid particle swarm optimization algorithm-based whale optimization algorithm (HPSO-WOA). To improve device performance, the whale optimization algorithm (WOA) is utilized to find optimal geometric parameters of FinFET, such as width and height. Meanwhile, the PSO is used to optimize WOA hyperparameters. It uses various parameters such as on-state current, transconductance, subthreshold swing (SS), early voltage (<i>V</i><sub>EA</sub>), and transconductance generation factor (TGF) for analyzing the impact of fin width and height on the FinFET device. Additionally, we have analyzed the impact of the proposed parameters on the design of 6-T static random access memory (SRAM). Microwind 3.9 EDA is used to design, simulate, and improve the physical layout utilizing the FinFET 14 nm and BSIM 4 MOS modeling technique. The proposed HPSO-WOA improves 0.17% in SS, 0.62% in <i>g</i><sub><i>m</i></sub>, 0.05% in TGF, and 70.86% in optimization time over the quasi-random sequence (QRS)-WOA. However, it resulted in overall improvement of 0.90% in SS, 0.74% in <i>g</i><sub><i>m</i></sub>, 1.05% in TGF, and 173% in optimization time over traditional WOA.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2/7035085","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144910197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adaptive Temperature-Compensation of Charge-Pump PLL–Based MTJ/CMOS for Frequency Stability 基于锁相环的电荷泵MTJ/CMOS频率稳定自适应温度补偿
IF 1.2 4区 工程技术
Iet Circuits Devices & Systems Pub Date : 2025-08-27 DOI: 10.1049/cds2/1773323
Chunyu Peng, Jingxue Zhong, Yingxue Sun, Weizhe Tan, Chengxing Dai, Xin Li, Xiulong Wu, Yongliang Zhou
{"title":"Adaptive Temperature-Compensation of Charge-Pump PLL–Based MTJ/CMOS for Frequency Stability","authors":"Chunyu Peng,&nbsp;Jingxue Zhong,&nbsp;Yingxue Sun,&nbsp;Weizhe Tan,&nbsp;Chengxing Dai,&nbsp;Xin Li,&nbsp;Xiulong Wu,&nbsp;Yongliang Zhou","doi":"10.1049/cds2/1773323","DOIUrl":"10.1049/cds2/1773323","url":null,"abstract":"<p>The charge pump phase-locked loop (CP-PLL) is a critical component in modern mixed-signal electronics, widely used for clock generation, synchronization, and frequency synthesis in digital and wireless applications. However, its performance is significantly impacted by nonideal effects, particularly the current mismatch of the charge pump (CP) and the frequency variation of oscillator, both of which are highly sensitive to temperature fluctuations. To address these challenges, this work leverages the positive temperature coefficient (PTC) of the drain-source on-state resistance in CMOS and the negative temperature coefficient (NTC) of the magnetic tunnel junction (MTJ). Using 28 nm CMOS technology, we analyze and simulate the current mismatch of the CP across a wide temperature range, achieving a current mismatch of less than 0.3%. Furthermore, the proposed approach significantly improves the frequency stability of the ring oscillator. Simulation results validate the effectiveness of our design, demonstrating that the MTJ compensates for 90% of the output frequency drift over a temperature range from −80 to 125°C.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2025 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2/1773323","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144905509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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