Characterizing a standard cell library for large scale design of memristive based signal processing

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Abubaker Sasi, Arash Ahmadi, Majid Ahmadi
{"title":"Characterizing a standard cell library for large scale design of memristive based signal processing","authors":"Abubaker Sasi,&nbsp;Arash Ahmadi,&nbsp;Majid Ahmadi","doi":"10.1049/cds2.12076","DOIUrl":null,"url":null,"abstract":"<p>In recent years, the use of memristors in circuits design has rapidly increased and attracted research interest. Advances have been made to both the size and the complexity of memristor designs. Therefore, computer aided design tools are required to handle memristor-based large-scale designs. A comprehensive automatic framework for the design and synthesis of large-scale memristor-complementary metal-oxide-semiconductor (CMOS) circuits is described herein. This framework provides a synthesis approach that can be applied to all memristor-based digital logic designs. In particular, it is a proposal for a characterization methodology of memristor-based logic cells to generate a standard cell library file for large-scale simulation. The proposed architecture is based on RRAM and ReRAM redox-based devices and the memristor ratioed logic design approach. The proposed framework is implemented in the Cadence Virtuoso schematic-level environment and was verified with Verilog-XL, MATLAB, and the electronic design automation synopses compiler after being translated to the behavioral level. The proposed method can be applied to implement any digital logic design. Nevertheless, it is perfectly suitable for signal processing applications that require MATLAB functions to produce text files with hex values in order to overcome the limitations of the simulation environment. A framework is deployed herein for design of the memristor-based parallel 8-bit adder/subtractor and a 2D memristive-based median filter. Both proposed designs memristor-based adder/subtractor and memristive median filter have significant power reductions of 66% and 16% respectively, when compared to the same designs using CMOS technology.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2021-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12076","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iet Circuits Devices & Systems","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/cds2.12076","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In recent years, the use of memristors in circuits design has rapidly increased and attracted research interest. Advances have been made to both the size and the complexity of memristor designs. Therefore, computer aided design tools are required to handle memristor-based large-scale designs. A comprehensive automatic framework for the design and synthesis of large-scale memristor-complementary metal-oxide-semiconductor (CMOS) circuits is described herein. This framework provides a synthesis approach that can be applied to all memristor-based digital logic designs. In particular, it is a proposal for a characterization methodology of memristor-based logic cells to generate a standard cell library file for large-scale simulation. The proposed architecture is based on RRAM and ReRAM redox-based devices and the memristor ratioed logic design approach. The proposed framework is implemented in the Cadence Virtuoso schematic-level environment and was verified with Verilog-XL, MATLAB, and the electronic design automation synopses compiler after being translated to the behavioral level. The proposed method can be applied to implement any digital logic design. Nevertheless, it is perfectly suitable for signal processing applications that require MATLAB functions to produce text files with hex values in order to overcome the limitations of the simulation environment. A framework is deployed herein for design of the memristor-based parallel 8-bit adder/subtractor and a 2D memristive-based median filter. Both proposed designs memristor-based adder/subtractor and memristive median filter have significant power reductions of 66% and 16% respectively, when compared to the same designs using CMOS technology.

Abstract Image

描述了一种基于记忆的大规模信号处理设计的标准单元库
近年来,忆阻器在电路设计中的应用迅速增加,引起了人们的研究兴趣。在记忆电阻器设计的尺寸和复杂性方面都取得了进展。因此,需要计算机辅助设计工具来处理基于忆阻器的大规模设计。本文描述了一种用于设计和合成大规模记忆电阻器互补金属氧化物半导体(CMOS)电路的综合自动化框架。该框架提供了一种可应用于所有基于忆阻器的数字逻辑设计的综合方法。特别地,它是一个基于忆阻器的逻辑单元的表征方法的建议,以生成一个标准的单元库文件进行大规模模拟。所提出的架构是基于RRAM和基于RRAM redox的器件和忆阻器比例逻辑设计方法。提出的框架在Cadence Virtuoso原理图级环境中实现,并在转换到行为级后,使用Verilog-XL、MATLAB和电子设计自动化概要编译器进行验证。该方法可用于实现任何数字逻辑设计。尽管如此,为了克服仿真环境的限制,它非常适合于需要MATLAB函数生成带有十六进制值的文本文件的信号处理应用。本文设计了基于忆阻器的并行8位加/减法器和基于二维忆阻器的中值滤波器的设计框架。与使用CMOS技术的相同设计相比,基于忆阻器的加/减法器和忆阻中值滤波器的功耗分别降低了66%和16%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信