International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献_第6页

Design and application of optimum toroidal shaped electromagnetic energy harvesters for unmanned aerial vehicles 无人机最佳环形电磁能量收集器的设计与应用

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-05 DOI: 10.1002/jnm.3260

M. Şamil Balcı, Adem Dalcalı

{"title":"Design and application of optimum toroidal shaped electromagnetic energy harvesters for unmanned aerial vehicles","authors":"M. Şamil Balcı, Adem Dalcalı","doi":"10.1002/jnm.3260","DOIUrl":"https://doi.org/10.1002/jnm.3260","url":null,"abstract":"This study presents the design and implementation of electromagnetic energy harvesters for the purpose of charging unmanned aerial vehicles (UAVs) battery. In the study, the designed harvesters are analyzed through finite element method (FEM) simulations. In the FEM analysis, common and self-inductance values, as well as magnetic flux density values of the harvesters, are calculated at specific current values. Inductance values are also theoretically calculated for comparison. Subsequently, an experimental setup is established to test the designed harvesters. After winding the core, the induced voltage and the power transferred to the load by the harvesters are measured. Curve fitting is performed after the measurements with different load resistances to find the maximum power transferred to the load. Through curve fitting, the maximum power obtained at each current value and at which load resistance this power is harvested are determined. Considering the intention of using the designed cores to charge UAVs and the importance of weight in UAV flight, the weights of each core, both without winding and after winding, are measured, and their costs are calculated. Taking all these criteria into account, the performance of the harvesters is demonstrated, and those among the used cores that are the most suitable for UAVs are identified in the study.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141264617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K 研究低至 10 mK 的长沟道体 MOSFET 阈值电压模型和 4 K 时的关键模拟参数

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-05 DOI: 10.1002/jnm.3258

Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen

{"title":"Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K","authors":"Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen","doi":"10.1002/jnm.3258","DOIUrl":"https://doi.org/10.1002/jnm.3258","url":null,"abstract":"Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (Vth) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (gm), subthreshold swing (SS), linear region current (Ilin) and gm/IDS related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141264616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hyper-parameter optimized GPR model based on chaos game algorithm for RF power transistors 基于混沌博弈算法的射频功率晶体管超参数优化 GPR 模型

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-03 DOI: 10.1002/jnm.3259

Zhiwei Gao, Tao Zhou, Giovanni Crupi, Jialin Cai

引用次数: 0

The artificial neural network approach for the transmission of malicious codes in wireless sensor networks with Caputo derivative 利用卡普托导数在无线传感器网络中传输恶意代码的人工神经网络方法

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-03 DOI: 10.1002/jnm.3256

Zia Ullah Khan, Mati ur Rahman, Muhammad Arfan, Waseem, Salah Boulaaras

{"title":"The artificial neural network approach for the transmission of malicious codes in wireless sensor networks with Caputo derivative","authors":"Zia Ullah Khan, Mati ur Rahman, Muhammad Arfan,  Waseem, Salah Boulaaras","doi":"10.1002/jnm.3256","DOIUrl":"https://doi.org/10.1002/jnm.3256","url":null,"abstract":"The current manuscript investigates a six compartmental mathematical model for malicious Codes in Wireless Sensor Network is consider for investigation under the fractional operator of Caputo along with their numerical scheme. The six agent nodes of the network sensors are transferable like in infection with in their community of different nodes. With the help of fixed point theory the presentation of existence and uniqueness of solution of the said model are also given. The scheme of numerical solution under fractional format is developed with the choice of fractional orders which increasing the degree of freedom for such type of network analysis. The numerical simulation of all the six agents are given on different fractional orders along with sensitivity of the fractional orders and some used parameters. The new analysis artificial neural network (ANN) method has been utilized for the considered model and compared with Adams–Bashforth (AB) method. We divided the data set into three categories training, testing and validation with ANN method and the analysis is presented in this work.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141245947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization and performance indication of surrounding gate tunnel field-effect transistors based on machine learning 基于机器学习的环绕栅隧道场效应晶体管优化和性能指示

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-02 DOI: 10.1002/jnm.3257

V. Charumathi, N. B. Balamurugan, M. Suguna, D. Sriram Kumar

{"title":"Optimization and performance indication of surrounding gate tunnel field-effect transistors based on machine learning","authors":"V. Charumathi, N. B. Balamurugan, M. Suguna, D. Sriram Kumar","doi":"10.1002/jnm.3257","DOIUrl":"https://doi.org/10.1002/jnm.3257","url":null,"abstract":"Selecting designs that efficiently optimize multiple objectives simultaneously is an important problem in several distinct industries. Typically, there is not a single ideal design; rather, there are several Pareto-optimal designs that provide the best possible trade-offs between the objectives. However, evaluating every design might be expensive, making a thorough search for the whole Pareto optimum set impractical. The aforementioned issue with technology computer-aided design (TCAD) while investigating a multidimensional parameter set for device design is addressed using Pareto active learning (PAL) and the nondominated sorting genetic algorithm-III (NSGA-III) which are metaheuristics-based multiobjective optimization (MOO) techniques. NSGA-III adeptly analyzes the tradeoffs among multiple objectives while ensuring diversity in the design space. PAL forecasts the Pareto-optimal set with intelligence by deliberately sampling the design space. This work focusses on improving the performance of surrounding gate tunnel field-effect transistors (SGTFETs) by optimizing and assessing their complex designs in terms of multiple objectives, including power, energy, speed, and variability. This paper presents a novel MOO framework that incorporates machine learning (ML) approaches, including NSGA-III and PAL in SGTFETs technology. The framework provides effective global optimization without gradients, allowing for the automatic recognition of the best solutions. The outcomes show the possibility of ML-based MOO to create next-generation nanoscale transistors.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141245644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oscillator networks with N-shaped nonlinearities: Electrical modeling and wave digital emulation 具有 N 型非线性的振荡器网络：电子建模和波形数字仿真

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-05-29 DOI: 10.1002/jnm.3255

Bakr Al Beattie, Jonas Röhrig, Ahmed Altin, Luis Gödde, Karlheinz Ochs

{"title":"Oscillator networks with N-shaped nonlinearities: Electrical modeling and wave digital emulation","authors":"Bakr Al Beattie, Jonas Röhrig, Ahmed Altin, Luis Gödde, Karlheinz Ochs","doi":"10.1002/jnm.3255","DOIUrl":"https://doi.org/10.1002/jnm.3255","url":null,"abstract":"This paper proposes contributions to the efficient wave digital (WD) modeling of large oscillator networks which are emerging as energy-efficient alternatives to traditional computers. The WD concept enables in-operando parameter tuning, real-time testing, and the associated algorithms are highly parallelizable. We present a general electrical model of N-shaped nonlinearities that are commonly found in nonlinear oscillators. Our model offers the flexibility to design the current–voltage characteristic based on specific requirements. We show how this model can be used to derive efficient and explicit WD algorithms for nonlinear oscillators. Furthermore, we propose the use of lossless transmission lines between the oscillators and the coupling network to obtain an ideal circuit for an oscillator network that can function as an Ising machine and be efficiently and exactly evaluated in the WD domain. The proposed algorithms are compared against the classical method involving iterative techniques, and their capabilities are evaluated through the emulation of a single FitzHugh-Nagumo oscillator as well as an Ising machine involving transmission lines. In the latter case, we show that, for large networks, the proposed methods decrease the runtime by up to 75% compared to using iterative techniques.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3255","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fourth-order inverse filter configuration using current differencing buffered amplifier 使用电流差分缓冲放大器的四阶反向滤波器配置

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-05-26 DOI: 10.1002/jnm.3243

Mourina Ghosh, Pulak Mondal, Santosh Kumar

引用次数: 0

Physics-informed neural network assisted automated design of power amplifier by user defined specifications 由用户定义规格的物理信息神经网络辅助自动设计功率放大器

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-05-22 DOI: 10.1002/jnm.3246

Gaurav Bhargava, Hemant Kumari, Valeria Vadalà, Shubhankar Majumdar, Giovanni Crupi

{"title":"Physics-informed neural network assisted automated design of power amplifier by user defined specifications","authors":"Gaurav Bhargava, Hemant Kumari, Valeria Vadalà, Shubhankar Majumdar, Giovanni Crupi","doi":"10.1002/jnm.3246","DOIUrl":"https://doi.org/10.1002/jnm.3246","url":null,"abstract":"This article presents a model that can automatically produce a power amplifier's (PA) design parameters, that is, transmission lines (TLs) dimension, from a dataset of user-specified design goals like gain, efficiency, linearity, and scattering (S-) parameters. Based on the applied boundary conditions, a synthetic dataset is generated with the best range of design parameters (W and L). This dataset is utilized for training the physics-informed neural network (PINN) model with user-specified design goals as input and design parameters as target to produce the optimum value of W and L as the resultant output. Furthermore, utilizing the obtained dimensions, design, simulation, fabrication, and measurement of a PA are performed to validate our proposed model. The results of large signal measurements of PA are drain efficiency (DE) of 26.9%, power added efficiency (PAE) of 24.7%, output power (Pout) of 30.98 dBm at an input power <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>P</mi>\u0000 <mtext>in</mtext>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({P}_{in}right) $$</annotation>\u0000 </semantics></math> of 19 dBm, and gain of 12.41 dB at an operating frequency of 1.625 GHz. It has been observed that the design parameters produced by the model have a significant agreement with the validated output. Also, the statistical error analysis is done by calculating the error metrics between the validated output and the actual output of the PA design.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141078944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New approximation method for high order impedance boundary condition with surface integral equations for the scattering problem 高阶阻抗边界条件与散射问题表面积分方程的新近似方法

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-05-16 DOI: 10.1002/jnm.3239

Christian Daveau, Soumaya Oueslati, Molka Kacem

引用次数: 0

Miniaturized IPD band pass filter with low insertion loss based on modified T-section for 5G applications 基于改进型 T 型截面的低插入损耗小型 IPD 带通滤波器，适用于 5G 应用

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-05-15 DOI: 10.1002/jnm.3248

Qi Zhang, Yazi Cao, Gaofeng Wang

引用次数: 0