An Analytical Subthreshold I–V Model of SiC Double Gate JFETs

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-12-26 DOI:10.1002/jnm.70008

Yi Li, Tao Zhou, Zixuan Guo, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Qin Liu, Linfeng Deng

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引用次数: 0

Abstract

SiC double gate (DG) junction field effect transistor (JFET) is promising for low-noise and high-temperature electronics. Existing studies indicate that JFETs can be considered a special case of MOSFETs when the oxide layer thickness approaches zero. In this article, we exploited the structural similarity between the DG JFETs and the DG MOSFETs. By obtaining the 2D Poisson's equation for the DG MOSFETs and deriving the limits, we developed a model for calculating the channel current of SiC DG JFETs in the subthreshold region. The model is derived from device physics, requiring no fitting parameters and offering relatively low computational complexity. The results indicate that, whether for enhancement mode or depletion mode JFETs, the calculated values of this model are in good agreement with the 2D numerical analysis results obtained from Silvaco Atlas. Moreover, for enhancement mode JFETs, even when significant short-channel effects occur, the subthreshold current can still be well predicted. In addition, the model displays predictive capability for the depletion-mode JFETs.

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.