International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Physics Informed Neural Network Method for Solving Delay Hilfer Fractional Differential Equations","authors":"Parisa Rahimkhani,&nbsp;Sedigheh Sabermahani,&nbsp;Hossein Hassani","doi":"10.1002/jnm.70070","DOIUrl":"https://doi.org/10.1002/jnm.70070","url":null,"abstract":"<div>\u0000 \u0000 <p>In this research, a machine learning method based on physics informed neural network and fractional-order Genocchi wavelets (FGWs) as activation function is explored to solve delay Hilfer fractional differential equations (DHFDEs). In this machine learning algorithm, the FGWs and <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>sinh</mi>\u0000 </mrow>\u0000 <annotation>$$ sinh $$</annotation>\u0000 </semantics></math> functions are used as kernel functions to approximate the solution of DHFDEs. In fact, the solution of DHFDEs is approximated as a combination of the mentioned kernel functions and a set of weights that are learned during the fitting process. We apply the roots of the Legendre functions as training data to develop the algorithm. Then, the training is proposed using the optimizer algorithm. In addition, the error bound of the presented strategy is discussed. Finally, to illustrate the validity and feasibility of our results, three numerical simulation along with several tables and figures are utilized.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Impact of Temperature Variations on the Electrical Performance of SOI FinFET Devices","authors":"Haifa Bahri,&nbsp;Rached Ben Mehrez,&nbsp;Faouzi Nasri,&nbsp;Lilia El Amraoui,&nbsp;Nejeh Jaba","doi":"10.1002/jnm.70069","DOIUrl":"https://doi.org/10.1002/jnm.70069","url":null,"abstract":"<div>\u0000 \u0000 <p>The temperature-dependent self-heating effect (SHE) is critical for both accurate modeling and selecting optimal operating conditions, as elevated temperatures can compromise device reliability. These days, technology trends toward the miniaturization of electronic devices. As a result, device size decreases, and the packing density of a circuit at the integrated level increases. The combination of these two trends leads to an increase in power density and circuit temperature. For these reasons, our work aims to develop an electrothermal simulation of 20-nm SOI-FinFET. To rigorously analyze electrical behavior, we developed a mathematical framework integrating the ballistic-diffusive equation (BDE). The proposed model is validated by comparing simulated IDS-VGS characteristics with experimental data, demonstrating strong agreement. The SHE is related to thermal design, which is considered a basic procedure in modern microelectronics technology, measuring devices, and a series of modeling simulations and computer analysis of devices. “OFF” is not totally “OFF,” we have demonstrated the evolution of OFF-current (I_off) with device temperature and the impact of temperature in 20-nm SOI-FinFET on the subthreshold swing (SS) with both V_GS = 0.8 V and V_DS = 0.8 V.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Hybrid Electromagnetic Algorithm for Reconstructing 2-D Dielectric Objects Based on the M-Net","authors":"Ming Jin,&nbsp;Chun Xia Yang,&nbsp;Mei Song Tong","doi":"10.1002/jnm.70071","DOIUrl":"https://doi.org/10.1002/jnm.70071","url":null,"abstract":"&lt;div&gt;\u0000 \u0000 &lt;p&gt;The electromagnetic inverse scattering problem is highly nonlinear and ill-posed, often requiring iterative optimization with regularization terms. In this paper, we propose an enhanced U-Net called M-Net that combines multi-feature input and weighted output layers with an improved loss function calculation method to improve network performance. Given the intimate connection between inverse scattering and forward scattering, this paper devotes some space to demonstrate the effectiveness of neural networks in solving electromagnetic forward problems. The lack of rigorous theoretical derivation poses challenges in ensuring the reliability of neural network output results, thereby limiting its application in electromagnetic problems. In this paper, instead of the scattered field, we utilize diffraction tomography (DT) images that contain information about both imaging models and scattering mechanisms as the input data for the neural network. This approach provides richer a priori knowledge for the neural network and reduces learning difficulty. Numerical simulations of two-dimensional circular scatterers demonstrate that the hybrid M-Net-based electromagnetic inversion algorithm can effectively reconstruct the position, profile, and relative permittivity distribution of scatterers. Comparative experiments reveal significant improvements: the hybrid M-Net achieves an average reconstruction error of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;1.17&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;msup&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 1.17times {10}^{-4} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;%, outperforming the standard U-Net (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;8.39&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;msup&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 8.39times {10}^{-4} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;%), standard M-Net (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;4.07&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;msup&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 4.07times {10}^{-4} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;%), and hybrid U-Net (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;1.69&lt;/mn&gt;\u0000 ","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing VLSI Design Efficiency With ML-Based C-ANN: Performance Optimization of Gate-Stacked Ferroelectric FE-MOSFETs for High-Speed and RF Applications","authors":"Abhay Pratap Singh,&nbsp;Vibhuti Chauhan,&nbsp;R. K. Baghel,&nbsp;Sukeshni Tirkey","doi":"10.1002/jnm.70064","DOIUrl":"https://doi.org/10.1002/jnm.70064","url":null,"abstract":"<div>\u0000 \u0000 <p>This study presents an innovative approach leveraging TCAD simulations and a Convolutional Artificial Neural Network (C-ANN) to address challenges in VLSI design. A statistical sample of 4000 distinct values was simulated to predict drain current (<i>I</i>_ds), achieving a dramatic reduction in runtime from 46 to 48 days (conventional TCAD) to just 100–120 s using the proposed ML-based C-ANN. The proposed gate-stacking SiO₂ + HfO₂ FE-MOSFET device demonstrates significant advancements, including reductions in short-channel effects (SCEs), subthreshold swing (SS) by 3.12%–4.04%, and drain-induced barrier lowering (DIBL) by 10.19%. Enhanced performance metrics include 52.95% higher I_ON, 90% reduced gate leakage, and improved transconductance <i>g</i>_m, transconductance generation function (TGF), early voltage (<i>V</i>_EA), and intrinsic gain (<i>A</i>_v) by 26.18%, 27.12%, 29.35%, and 101.24%, respectively. RF parameters such as gate capacitance (<i>C</i>_gg), unity gain frequency (<i>f</i>_t), and gain frequency product (GFP) improved by 34.53%, 48.74%, and 21.18%, making this device ideal for high-speed switching and RF applications, promoting efficiency in low-power VLSI designs.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bright and Dark Optical Soliton Solutions for a Nonlinear Schrödinger Equation With Kerr Law Nonlinearity and Weak Nonlocality","authors":"Abdul-Majid Wazwaz","doi":"10.1002/jnm.70063","DOIUrl":"https://doi.org/10.1002/jnm.70063","url":null,"abstract":"<div>\u0000 \u0000 <p>In this paper, we investigate a nonlinear Schrödinger equation that includes a combination of Kerr law nonlinearity and weak nonlocality. The model includes linear and nonlinear dispersion and has several applications in nonlinear optics and optical fibers. We retrieve bright, dark, and singular soliton solutions for this system. We implement a variety of powerful schemes to derive this variety of optical soliton solutions. Moreover, we derive more solutions of distinct structures that include periodic and exponential solutions.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Novel Method of Accurate Calculation of the Magnetic Dipole Field in Both the Near and Far Fields","authors":"Jiaqi Liu,&nbsp;Guoqiang Wang,&nbsp;Chaobo Liu,&nbsp;Qiancheng Zhang,&nbsp;Lifei Meng,&nbsp;Zhong Yi,&nbsp;Qi Xiao,&nbsp;Tielong Zhang","doi":"10.1002/jnm.70068","DOIUrl":"https://doi.org/10.1002/jnm.70068","url":null,"abstract":"<div>\u0000 \u0000 <p>The magnetic dipole serves as a fundamental concept in understanding electromagnetic phenomena. It has extensive applications across various fields such as geophysics and indoor navigation, which require accurate determination of its magnetic field. Although the magnetic dipole approximation yields satisfactory results in the far field, its computational accuracy is poor in the near-field region. Here, we propose a method of accurately calculating the magnetic dipole field in both the near and far fields. This method encompasses three steps: first, calculating the magnetic field strength <i>B</i>_<i>T</i> at the position <b>r</b>; second, determining the direction of the magnetic field at <b>r</b>; and third, calculating three components of the magnetic field. Numerical tests show that the calculation error of <i>B</i>_<i>T</i> is &lt; 1% at <i>r</i> &gt; 1.2 <i>R</i>, and is &lt; 0.1% at <i>r</i> &gt; 10 <i>R</i>, where <i>R</i> is the radius of the magnetic dipole. Additionally, the magnetic field direction can be precisely modeled via multi-parameter fitting, yielding angular errors &lt; 0.1° in most regions at <i>r</i> &gt; 1.2 <i>R</i>. Integration of the direction and <i>B</i>_<i>T</i> enables us to accurately calculate three components of the magnetic field with an error of &lt; 1% at <i>r</i> &gt; 1.8 <i>R</i>. These results indicate that our method is able to achieve high accurate calculation of the magnetic dipole field in both the near and far fields. This method can provide an effective computational algorithm for the applications relying on magnetic dipoles.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Pixel Antenna Design and Optimization Through Dynamic Updating of Initial Structure","authors":"Fan Jiang,&nbsp;Huiyao Tan,&nbsp;Lulu Chen,&nbsp;Liang Hua Ye,&nbsp;Jian-Feng Li,&nbsp;Duo-Long Wu","doi":"10.1002/jnm.70067","DOIUrl":"https://doi.org/10.1002/jnm.70067","url":null,"abstract":"<div>\u0000 \u0000 <p>Dynamic updating technique for initial structure in pixel antenna design and optimization is proposed. The conventional approach to pixel antenna design employs a fixed initial pixel structure set at the start of the entire process, while rarely studying the setting of the initial structure; therefore, the performance potential is not fully exploited. The proposed approach adaptively updates the initial structure to enhance the performance of the pixel antenna design, aiming to find the optimal initial pixel structure that achieves miniaturization and broadband capabilities. In general, the design procedure starts with an initial structure with relatively big element size and small overall size, then gradually reduces the element size and expands the overall size of the pixel area. A two-port pixel antenna is used as a design example to validate the proposed updating technique. The goal was to design a dual-port pixel antenna operating in the band of 2.4–3.2 GHz, using a miniaturized size. After two rounds of updates, the obtained −10 dB impedance bandwidths increased from 0.44 GHz (2.47–2.91GHz) to 0.75 GHz (2.45–3.20 GHz) and to 1.07 GHz (2.35–3.42 GHz), while having isolation better than −15 dB. The statistical results of 10 optimization runs for 3 initial structures also showed the performance enhancement of each updated initial structure. The proposed updated technology can be applied to other types of pixel antenna designs, with different design specifications.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144244477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Hyperaccurate Semi–Analytical Method With Error Bound Analysis for Treating Fractional Integral Equations With Functional Kernels and Variable Delays","authors":"Ömür Kıvanç Kürkçü","doi":"10.1002/jnm.70061","DOIUrl":"https://doi.org/10.1002/jnm.70061","url":null,"abstract":"<div>\u0000 \u0000 <p>This study is concerned with treating the fractional integral equations with functional kernels and variable delays, introducing a hyperaccurate semi–analytical method based on the Stieltjes–Wigert polynomials, matrix expansions, and the Laplace transform. After analytically converting the terms in the governing equation into the matrix expansions of the Stieltjes–Wigert polynomials type at the collocation points, the method gathers these matrices into a unique matrix equation and then readily solves it by an elimination technique. The residual improvement technique is also introduced to correct the obtained solutions. The residual error bound analysis is theoretically proved via algebraical properties and the mean value theorem for fractional integral calculus, respectively. Six model equations are treated via the method, which runs on a devised computer program. Based on the outcomes, the method is straightforward to treat model equations and to encode its mainframe on a mathematical software.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Accurate Dynamic Model Identification Method for Industrial Robots Based on Improved Excitation Trajectory","authors":"Xiao Lin,&nbsp;Junyang Li,&nbsp;Yankui Song,&nbsp;Yogendra Arya,&nbsp;Yu Xia","doi":"10.1002/jnm.70062","DOIUrl":"https://doi.org/10.1002/jnm.70062","url":null,"abstract":"<div>\u0000 \u0000 <p>This article focuses on dynamic parameter identification for industrial robots and proposes a parameter identification method based on an improved excitation trajectory. First, a complex nonlinear friction model is adopted and modified according to joint friction characteristics, with a genetic algorithm utilized to determine its six parameters. Second, a weighted optimal excitation trajectory is designed to address nonlinear friction requirements and smooth operation constraints. Then, a global parameter optimization algorithm based on the least squares method and the modified sparrow search algorithm is proposed. Finally, the proposed method is validated on a self-developed six-axis industrial robot. Experimental results demonstrate that the proposed method achieves higher identification accuracy compared with two representative identification approaches.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Special Issue: The 13th International Symposium on Electric and Magnetic Fields (EMF 2023)","authors":"Christophe Geuzaine,&nbsp;André Nicolet","doi":"10.1002/jnm.70066","DOIUrl":"https://doi.org/10.1002/jnm.70066","url":null,"abstract":"<p>On behalf of the Editorial Board, we are pleased to present a selection of papers related to the 13th International Symposium on Electric and Magnetic Fields (EMF 2023), held in Marseille, France, on August 29–31, 2023.</p><p>The EMF symposium series, whose first edition was held in Liège, Belgium, in 1992, aims at building a bridge between recent research advances in mathematical and numerical modeling of electromagnetic fields and the growing number of industrial problems requiring such techniques. The 13th edition was organized at Aix-Marseille Université and attracted 75 participants from 16 countries.</p><p>Among the 65 presentations in the symposium program, 13 papers were selected for publication in this special issue of the <i>International Journal of Numerical Modelling: Electronic Networks, Devices and Fields</i>. The high scientific and technical quality of the symposium is well reflected in the quality of the manuscripts contained in this special issue.</p><p>Three broad topics were covered during the 13th edition of the symposium. The first major topic considers the mathematical modeling of electromagnetic problems in view of their eventual numerical solution on computers, with contributions on the calculation of forces [<span>1</span>], homogenization [<span>2</span>] and material models [<span>3, 4</span>]. The second major topic treats general methodological advances in numerical methods, from quasi-static [<span>5, 6</span>] to high-frequency problems [<span>7, 8</span>]. The third major topic is the application of modeling to the study, design, and optimization of a wide range of technological devices, spanning low- to high-frequency electromagnetic regimes [<span>9-13</span>]. This underlines the spirit of the conference, which encompasses both theory and practical applications.</p><p>We express our gratitude to the members of the EMF scientific committee—Florian Bentivegna, Oszkár Bró, Markus Clemens, Stéphane Clénet, Willie Cronje, Luc Dupré, Johan Gyselinck, Kay Hameyer, Lauri Kettunen, Vincent Mazauric, Gérard Meunier, Axel Modave, Ronan Perrussel, Martin Petrun, Adel Razek, Maurizio Repetto, Ruth Sabariego, Sebastian Schöps, Jan Sykulski—as well as to all the reviewers who provided the necessary volunteer time and expertise to conduct a fair and detailed review, ensuring high publication standards for the selected manuscripts. We also thank the staff from the <i>Association des Ingénieurs de Montefiore</i> (AIM), and especially Céline Dizier and Louisa Kara, for their help organizing the EMF symposium series.</p><p>We hope that you will enjoy reading this selection of articles.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70066","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}