International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"On the Nature, Root-Cause, and Elimination of Ground Resonances in a Transmission-Line Based Connector With Guard Traces","authors":"Navid Elahi,&nbsp;Jian-Ming Jin","doi":"10.1002/jnm.70116","DOIUrl":"https://doi.org/10.1002/jnm.70116","url":null,"abstract":"<p>In this paper, we investigate the important phenomenon of “ground resonance” in a transmission-line based connector with guard traces added for crosstalk reduction. Through a modal analysis, we analyze the phase differences between the differential signal mode on the transmission line and differential ground mode introduced with the addition of guard traces that are also known as ground lines. We show that the so-called “ground resonance” is due to the phase difference between the two modes, which causes the reflection of the combined field, instead of the ground mode alone, at the ends of the connector. With this revelation, we propose three methods based on two approaches to eliminating ground resonances to reduce the insertion loss and crosstalk in a connector with multiple transmission lines. One approach is to modify the configuration of the two ends of the guard traces to reduce the phase difference between the signal and ground modes, and the other approach is to compensate for the phase difference by changing the propagation velocity of the signal mode. We demonstrate the effectiveness of these approaches through numerical simulation of two connectors: one based on the microstrip structure and the other based on the coplanar structure, with both a single differential pair and two adjacent differential pairs considered.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70116","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145058017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Impact of Pore Diameters, Pore Randomness, and Void Fraction on the EMI Shielding of Polyurethane Foams","authors":"Ahmad Mamoun Khamis,&nbsp;Isabelle Huynen","doi":"10.1002/jnm.70111","DOIUrl":"https://doi.org/10.1002/jnm.70111","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents a novel approach to analyze the electromagnetic interference (EMI) shielding effectiveness (SE) of polyurethane (PU) foam geometries, which are built in Blender software and simulated using CST Studio software. Three different batches of geometries were built to investigate the impact of pore diameters, pore randomness, and void fraction of PU foam on the SE, reflection coefficient (<i>S</i>₁₁), and electromagnetic absorption in the 26.5–40 GHz frequency range. The observed resonance frequency decreased with decreasing pore diameters and void fraction. Decreasing the pore diameter, increasing the pore randomness, and decreasing the void fraction enhanced the SE in the frequency range between the resonance frequency and 40 GHz. The EM absorption increased with increasing the pore diameter and randomness but decreased with increasing the void fraction. This study also presents simulations and measurements of Polytetrafluoroethylene (PTFE) and PU foam materials. The simulation results were compared with the measured ones obtained using vector network analyzer measurements to verify CST Studio's ability to accurately calculate the EM parameters. The measured and simulated results were in good agreement, confirming the accuracy of the results obtained using CST Studio. Our new parametric study fills a gap in existing literature since it combines for the first time an open-source 3D software for 3D rendering with an electromagnetic simulator to evaluate the impact of the pore topography (void fraction, diameter, randomness, etc.) on the EMI shielding performance of PU foams.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145012412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Leveraging Machine Learning for Enhanced Design and Optimization of Gaussian-Doped Trigate FinFETs","authors":"B. Jasmine Priyadharshini,&nbsp;N. B. Balamurugan,&nbsp;M. Hemalatha,&nbsp;M. Suguna","doi":"10.1002/jnm.70108","DOIUrl":"https://doi.org/10.1002/jnm.70108","url":null,"abstract":"<div>\u0000 \u0000 <p>Fin-shaped Field Effect Transistors (FinFETs) are essential in the world of sub-nanometer technology nodes because of their remarkable scalability and electrostatic control. This work presents a new, optimized, and small-scale Gaussian-doped FinFET design that improves analog performance and minimizes short channel effects over conventional planar MOSFETs. Our unique structure leverages an Artificial Neural Network (ANN) in conjunction with a Genetic Algorithm (GA) for optimization. The dataset for ANN training was meticulously generated by designing and simulating Gaussian-doped FinFETs with varying Fin-width (<i>W</i>_Fin) and Fin-height (<i>H</i>_Fin). Through this process, we identified optimal <i>W</i>_Fin and <i>H</i>_Fin values that significantly improve performance characteristics. The optimized Gaussian-doped FinFET demonstrates superior control over short channel effects, as evidenced by a subthreshold swing (SS) of 66 mV/dec, an off-state current (<i>I</i>_OFF) of 3.54 pA, and an on-state current (<i>I</i>_ON) of 12 μA. The close alignment between the optimized and simulated performance characteristics, with less than a 5% variance, underscores the efficacy of our optimization approach.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145012429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Special Issue on the 7th International Sino MOS-AK Workshop","authors":"Jun Zhang,&nbsp;Wladek Grabinski,&nbsp;Yuehang Xu","doi":"10.1002/jnm.70114","DOIUrl":"https://doi.org/10.1002/jnm.70114","url":null,"abstract":"&lt;p&gt;As device structures become increasingly complex, with the continuous emergence of novel materials, unconventional architectures, and new physical phenomena, the coupling of multiple physical domains, including thermal, electrical, and optical effects, is becoming ever more prevalent. At the same time, rising development and manufacturing costs place additional demands on modelers to deliver representations that are both accurate and computationally efficient across the entire chain from device physics to circuit behavior. Modeling serves two complementary purposes: Theoretical models provide insight into the operating principles of devices while also guiding design optimization and enabling engineers to fully exploit intertwined physical effects. Analytical modeling, however, often requires careful trade-offs among accuracy, generality, and simplicity. Models must be predictive enough to inform design while offering meaningful physical insight. In modern semiconductor devices, which often feature three-dimensional geometries, solving the coupled semiconductor physics equations analytically is extremely challenging or even impossible. Closed-form solutions are typically unattainable, so judicious simplifications are necessary to ensure that models remain tractable and practically useful.&lt;/p&gt;&lt;p&gt;The papers in this Special Issue address these challenges by balancing physical fidelity with computational efficiency. They deepen our understanding of device physics while providing models that are both insightful and practical, with applications spanning cryogenic electronics, wide-bandgap devices, and radiation-hardened systems.&lt;/p&gt;&lt;p&gt;Su et al. [&lt;span&gt;1&lt;/span&gt;] present a charge-based analytical model for bulk MOSFETs, that is, valid down to 10 mK. Their work clarifies the interface-trap-dominated mechanisms that lead to threshold voltage divergence between NMOS and PMOS devices and quantifies significant analog parameter enhancements, including a 73% increase in PMOS cutoff frequency at 4 K. These findings are essential for quantum-control electronics. Complementing this, Mao et al. [&lt;span&gt;2&lt;/span&gt;] provide a comprehensive review of four physics-based compact models for GaN HEMTs, namely MVSG, ASM HEMT, EPFL, and QPZD. They analyze how each model addresses challenges such as trapping effects, self-heating, and process variability, and highlight emerging opportunities for combining physical models with machine learning to accelerate parameter extraction and quantify uncertainties. In the area of radiation-tolerant electronics, Xu et al. [&lt;span&gt;3&lt;/span&gt;] introduce a machine-learning approach using an ant-colony-optimized neural network. By adaptively sampling critical waveform regions, their method achieves an RMS error of only 0.82% in predicting single-event transient currents, surpassing the fidelity limits of traditional double-exponential pulse models and enabling high-precision radiation effect simulation for aerospace applications. Meanwhile, De","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70114","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145012430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Digital Predistorter Implementation for Wideband Power Amplifiers in New Generation Wireless Systems Based on a Low-Complexity Volterra Series Model","authors":"Haithem Rezgui,&nbsp;Ghalid Abib,&nbsp;Fatma Rouissi,&nbsp;Adel Ghazel","doi":"10.1002/jnm.70113","DOIUrl":"https://doi.org/10.1002/jnm.70113","url":null,"abstract":"<p>In this article, we provide a novel, expanded, and adapted pruning approach for the Simplified Volterra Series (SVS) model that makes it applicable to a wider range of Power Amplifiers (PAs). The proposed Modified SVS (MSVS) model is then applied in a Digital Predistortion (DPD) architecture to linearize a 25 W Gallium Nitride (GaN) RF PA. A comprehensive and detailed experimental hardware setup is designed for the in-depth testing and validation of the proposed model based DPD architecture, covering PA characterization, model coefficients extraction, and linearization. Our proposed MSVS based DPD significantly reduces the computational cost by at least 60% compared to widely referenced models in the literature while maintaining an optimal balance between accuracy and complexity. Experimental results performed using Long Term Evolution (LTE) signals show a modeling accuracy of −37 dB in terms of Normalized Mean Square Error (NMSE) and a 14 dB reduction in out-of-band distortion in terms of Adjacent Channel Power Ratio (ACPR), compared to the no DPD configuration.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70113","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coarse and Fine Encoding Genetic Algorithm Assisted Parameter Extraction Approach for Quasi-Empirical Equivalent Circuit Model of Fan-Out Coplanar Waveguide","authors":"Yanghui Hu,&nbsp;Hongliang Lu,&nbsp;Silu Yan,&nbsp;Lin Cheng,&nbsp;Shaowei Wang,&nbsp;Ranran Zhao,&nbsp;Yuming Zhang","doi":"10.1002/jnm.70107","DOIUrl":"https://doi.org/10.1002/jnm.70107","url":null,"abstract":"<div>\u0000 \u0000 <p>In this article, a genetic algorithm based on coarse and fine encoding is proposed to assist the parameter extraction method of the coplanar waveguide model. First, an equivalent circuit model is proposed to accurately characterize the electrical characteristic parameters of the coplanar waveguide. The proposed quasi-empirical equivalent circuit model not only has a certain physical meaning but can also realize the solution of the nonlinear relationship between the device performance parameters and the dimensional structure parameters. Then, a single-step genetic algorithm is proposed to accelerate the parameter extraction based on the proposed semi-empirical model of the coplanar waveguide. On this basis, a coarse and fine encoding genetic algorithm is proposed to accelerate the parameter extraction. The proposed parameter extraction method not only avoids the problem of inaccurate element values that may be caused by artificially determining partial parameter values, but also omits the process of solving simultaneous equations. It can also avoid the problem of insufficient solution accuracy caused by the large order-of-magnitude difference between the values of equivalent circuit elements. Therefore, the quasi-empirical equivalent circuit model and the parameter extraction method accelerated by the coarse and fine encoding genetic algorithm proposed can achieve accurate and efficient modeling of devices.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Evaluation and Accelerated Optimization of 4H-SiC Power Devices Based on Neural Networks","authors":"Wei Li,&nbsp;Jiaxi Zhang,&nbsp;Fan Bi,&nbsp;Xuanlin Wang,&nbsp;Yucheng Wang,&nbsp;Shaoxi Wang","doi":"10.1002/jnm.70109","DOIUrl":"https://doi.org/10.1002/jnm.70109","url":null,"abstract":"<div>\u0000 \u0000 <p>Compared to traditional technology computer-aided design (TCAD) simulations, using neural networks to predict semiconductor device performance does not face convergence problems. This advantage is particularly significant when simulating devices made of materials like silicon carbide (SiC), which exhibit complex physical behaviors, making them difficult to converge in simulations. In addition, traditional TCAD software lacks the capability to deduce device structural parameters from device performance metrics. This article selects four critical structural parameters of 4H-SiC trench gate MOS devices: trench depth (<i>D</i>_t), gate oxide thickness (<i>T</i>_ox), drift region doping concentration (<i>N</i>_d), and P-region channel P-region length (L) as variables. Firstly, two types of neural network architectures were constructed and trained to serve as a classifier and a value predictor, respectively, among them, the breakdown mechanism classifier achieved an accuracy rate of 97% in the validation process. The average error of breakdown voltage prediction was 5.6%. In order to ensure the accuracy and stability of the prediction, we randomly selected 1000 sets of parameters within the value range for simulation to obtain a new dataset and improve the neural network structure. The improved neural network achieved average errors of 2.9% and 4.9% in the prediction of breakdown voltage and on-resistance, respectively. Subsequently, we built an optimizer based on the improved neural network, achieving an automated design process for device structural parameters according to target breakdown voltage and on-resistance. In the accuracy validation of the optimizer, the average error between target values and actual values of breakdown voltage and on-resistance is 2.5% and 7.9%, respectively.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Nutcracker Optimization Algorithm and Its Application to Antenna and Array Designs","authors":"Jinghui Zhu,&nbsp;Shaoxian Li,&nbsp;Peng Zhao,&nbsp;Gaofeng Wang","doi":"10.1002/jnm.70100","DOIUrl":"https://doi.org/10.1002/jnm.70100","url":null,"abstract":"<div>\u0000 \u0000 <p>Metaheuristic algorithms play a crucial role in tackling the increasing complexity and challenges in antenna design. The nutcracker optimization algorithm (NOA), a novel metaheuristic inspired by nutcrackers' food-gathering, storing, searching, and retrieving behaviors, has shown excellent performance on 23 standard test functions and CEC—2014/2017/2020 test suites compared to well-established algorithms, yet it remains unapplied in antenna design. This study proposes a multi-strategy improved NOA (MINOA) to resolve NOA's unbalanced exploration and exploitation issues, applying it to ultra-wideband antenna design optimization and linear antenna array sidelobe suppression. MINOA employs Bernoulli chaotic mapping for uniform population initialization, a dynamic boundary strategy for balanced exploration and exploitation, and adaptive <i>t</i>-distribution disturbance to accelerate convergence and enhance local exploitation. Extensive tests on 23 benchmark functions prove MINOA's superiority in optimization accuracy, convergence speed, and stability over advanced algorithms such as NOA, WOA, GWO, SSA, DEA, SCSO, and HBMO. The Wilcoxon signed-rank test validates its significant improvement in accuracy. In broadband antenna optimization via an artificial neural network (ANN)-based surrogate model, MINOA reduces the mean square error (MSE) by 40.9% at the same iteration number and by 28.6% with 10 fewer iterations and 29 fewer fitness function calls compared to NOA during the preliminary training phase, achieving the widest bandwidth (3.62–11 GHz) among the eight algorithms. The Wilcoxon signed-rank test confirms MINOA's superiority. In the 16-element linear antenna array optimization, although MINOA performs slightly worse than DEA and WOA, it still achieves a low-sidelobe level of −41.38 dB, verifying its feasibility.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144927539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Haar Wavelet Method for the Solution of Fourteenth Order Boundary Value Problems","authors":"Rohul Amin,&nbsp;Imran Khan,&nbsp;Şuayip Yüzbaşı","doi":"10.1002/jnm.70104","DOIUrl":"https://doi.org/10.1002/jnm.70104","url":null,"abstract":"<div>\u0000 \u0000 <p>Higher-order boundary value problems (BVP) of differential equations (DEs) are important in the mathematical description of many real-world processes. Solving such problems for exact or analytical solutions is not always easy to deal. Therefore, to compute their numerical solution, we need some numerical methods. Hence, in this work, a powerful numerical procedure based on Haar Wavelet (HW) method is established to deal with fourteenth-order BVPs linear and nonlinear. A generalized form of the algorithm is developed under general boundary conditions. Then the numerical method is verified on various examples from the literature. Also, maximum and root mean square errors are calculated. Moreover, a comparison between exact and numerical results is shown at different collocation points. Furthermore, convergence rate is approximately 2 at various numbers of nodal points is also calculated.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144927538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Port/Four-Port Self-Isolated MIMO Antenna With Dual Band for GSM-900/Sub-6 GHz 5G Applications for IoT and Biomedical Applications","authors":"Navneet Kaur,&nbsp;Jaswinder Kaur,&nbsp;Surbhi Sharma,&nbsp;Aashish Kumar,&nbsp;Rajesh Khanna,&nbsp;Manish Sharma,&nbsp;Rana Gill","doi":"10.1002/jnm.70110","DOIUrl":"https://doi.org/10.1002/jnm.70110","url":null,"abstract":"<div>\u0000 \u0000 <p>The work presents the design of a compact two and four-element multiple input multiple output (MIMO) antenna, featuring a self-isolation capability. The proposed MIMO antenna operates at 0.77–0.96 GHz Global System for Mobile Communication (GSM-900) and 3.4–3.8 GHz (sub-6 GHz 5G band) for |<i>S</i>₁₁| &lt; −10 dB. The front view of the designed antenna comprises a thin slot that is sandwiched between the patch and an additional radiating element. Further, an inverted T-shape ground has been incorporated to attain the dual-band functionality without increasing the size of the antenna. Four antenna elements are placed orthogonally to enhance isolation between the inter-spaced radiators. It provides high isolation of the order of 32 and 24 dB for the GSM and 5G bands, without the use of a decoupling element. The two-port and four-port MIMO antenna occupies a space of 38 × 23 mm² and 50 × 45 mm² on FR4 substrate with permittivity of 4.40. Furthermore, diversity characteristics have been evaluated based on crucial parameters like envelope correlation coefficient (ECC), diversity gain (DG), and channel capacity loss (CCL) which are computed, and corresponding values for these parameters are as ECC 0.02, DG 10, and CCL below 0.5 bits/s/Hz for the two-port antenna. However, in the case of the four-port MIMO antenna, diversity results are as ECC 0.005, DG 10, and CCL is below 0.4 bits/s/Hz, which shows that the diversity performance of the four-port MIMO is better than the two-port MIMO antenna. Further, the validation of results and performance parameters of the fabricated antenna are experimentally tested and verified with the simulation results. The proposed work is well suited for Internet-of-Things (IoT) and Biomedical applications with SAR values at 0.80 GHz/3.60 GHz for two/four ports corresponding to 0.000153 and 0.712 W/Kg for single-port and 0.000473 and 0.0483 W/Kg for the four-port MIMO antenna.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144927537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}