International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

Development of a DGS-Based Slotted Body Worn Textile Antenna for Advanced IoT and AI Integration 先进物联网与人工智能集成的基于dgs的开槽体磨损织物天线的开发

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70043

S. T. Ali, Vinod Kumar Singh, Zakir Ali, V. K. Sharma, Ompal, Ramesh Kumar Verma

{"title":"Development of a DGS-Based Slotted Body Worn Textile Antenna for Advanced IoT and AI Integration","authors":"S. T. Ali, Vinod Kumar Singh, Zakir Ali, V. K. Sharma,  Ompal, Ramesh Kumar Verma","doi":"10.1002/jnm.70043","DOIUrl":"https://doi.org/10.1002/jnm.70043","url":null,"abstract":"<div>\u0000 \u0000 In this article, a novel textile jeans antenna is introduced that can cover range of frequencies from 3.85 to 14.58 GHz with a return loss of −23.02 dB at its lower working frequency of 4.8 GHz. To perform the simulation, the antenna is designed on the jeans substrate with <math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>ϵ</mi>\u0000 <mi>r</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {epsilon}_r $$</annotation>\u0000 </semantics></math> of 1.7 and size of 43.6 × 49 × 1 mm3 (0.7λ0 × 0.8λ0 × 0.016λ0 at frequency 4.8 GHz) Moreover, for improving bandwidth, defective ground structure (DGS) is used which provides a wide bandwidth range of 116.44%. The peak gain is found to be 4.5, 4.4, and 4.3 dBi at 4.8, 8.98, and 13.45 GHz, respectively. However, the efficiency is found more than 70% in operating band. The proposed antenna has omni-directional pattern for radiation and has good bending and wet characteristics suitable for IoT application like Wi-Max and AI, IoT devices such as automotive and robotics. The specific absorption ratio at 4.8 GHz is found to be maximum near the feed point which is 0.00596 W/kg for 10 g of tissue which is low as compared to standard value of 1.6 W/kg for 10 g of tissue.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transient Nonlinear Electrothermal Adjoint Sensitivity Analysis for HVDC Cable Joints 高压直流电缆接头瞬态非线性电热伴随灵敏度分析

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70035

M. Greta Ruppert, Yvonne Späck-Leigsnering, Herbert De Gersem

引用次数: 0

ML-Based Prediction of Dual-Channel Core Gate Junctionless FET Device Parameters Using XGBoost 基于ml的XGBoost双通道核栅无结FET器件参数预测

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70053

Rittik Kushwaha, Abhishek Raj, Shashi Kant Sharma

{"title":"ML-Based Prediction of Dual-Channel Core Gate Junctionless FET Device Parameters Using XGBoost","authors":"Rittik Kushwaha, Abhishek Raj, Shashi Kant Sharma","doi":"10.1002/jnm.70053","DOIUrl":"https://doi.org/10.1002/jnm.70053","url":null,"abstract":"<div>\u0000 \u0000 This study investigates the application of machine learning technique especially the ensemble learning category algorithm, that is, ‘Extreme Gradient Boosting (XGBoost)’ for making predictions of the various characteristics of Dual Channel Core Gate Junctionless Field Effect Transistors (DCCG-JLFET). Using data generated from the Technology Computer Aided Design (TCAD) simulations, the machine learning model is trained to predict the behavior of Dual Channel Core Gate Junctionless Field Effect Transistors based on various physical parameters. The objective of the model is to reveal the relationships and establish relationships among various parameters including drain current (IDS) and various short channel effects like subthreshold slope (SS), threshold voltage (Vth), ON current (ION) and OFF current (IOFF). Comparative analysis reveals that the ML model achieves an accuracy of 98.7% for current voltage curve prediction. Also, scatter plots reveal MSE of 5.96 × 10−9 for IDS, 6.98 × 10−8 for Vth, 3.24 × 10−9 for ION, 4.85 × 10−9 for IOFF, and 9.84 × 10−8 for SS and RMSE of 7.72 × 10−5 for IDS, 2.64 × 10−4 for Vth, 5.69 × 10−5 for ION, 6.96 × 10−5 for IOFF, and 3.14 × 10−4 for SS and R2-score of 0.91 for IDS, 0.99 for Vth, 0.96 for ION, 0.99 for IOFF, and 0.97 for SS when compared to TCAD Simulations. This ML approach can be effectively applied in optimizing and designing semiconductor devices.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing an Axial Flux Halbach Array Magnetic Gear Torque Profile Using the Taguchi DOE Method 利用田口DOE法增强轴向磁通Halbach阵列磁齿轮转矩廓形

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70014

Ali Harooni, Mahdi Abolghasemi, Aghil Ghaheri, Ebrahim Afjei

{"title":"Enhancing an Axial Flux Halbach Array Magnetic Gear Torque Profile Using the Taguchi DOE Method","authors":"Ali Harooni, Mahdi Abolghasemi, Aghil Ghaheri, Ebrahim Afjei","doi":"10.1002/jnm.70014","DOIUrl":"https://doi.org/10.1002/jnm.70014","url":null,"abstract":"<div>\u0000 \u0000 Due to the attractive advantages of magnetic gears resulting from contactless power transmission, these magnetic devices are replacing their mechanical counterparts. An axial flux magnetic gear with a gear ratio of 5.25 is investigated in this article. The high-speed rotor is utilized with Halbach array permanent magnets (PMs). The entity of distance between high-speed rotor (HSR) magnets reduces flux leakage and subsequently reduces torque ripple. To increase the maximum applicable torque and reduce the torque ripple on both sides, eight design parameters have been adopted and optimized using Taguchi method. The Taguchi method reveals each parameter's importance, rank, and influence on the proposed gear performance in terms of percentage by using the signal-to-noise ratios and analysis of variance, respectively. It is notable that this method decreases the required experiments, significantly. Low-speed rotor (LSR) maximum applicable torque, LSR, and HSR torque ripples have been studied as single objective optimization problems. Furthermore, multiobjective function is studied as well and optimum levels of control factors are derived. In addition, the participation percentage of each control factor is obtained. The obtained results by 3D finite element method (FEM) indicate the performance improvement of the optimized structure. Finally, rotors' stresses have been studied to ensure structural stability and its effect on the overall performance.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

RETRACTION: An Optimal Hybrid Control Scheme to Achieve Power Quality Enhancement in Micro Grid Connected System 微电网并网系统中提高电能质量的最优混合控制方案

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-16 DOI: 10.1002/jnm.70031

{"title":"RETRACTION: An Optimal Hybrid Control Scheme to Achieve Power Quality Enhancement in Micro Grid Connected System","authors":"","doi":"10.1002/jnm.70031","DOIUrl":"https://doi.org/10.1002/jnm.70031","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 \u0000 RETRACTION: P. Rajesh, F. H. Shajin, B. Rajani, and D. Sharma, “ An Optimal Hybrid Control Scheme to Achieve Power Quality Enhancement in Micro Grid Connected System,” International Journal of Numerical Modelling 35, no. 6 (2022): e3019, https://doi.org/10.1002/jnm.3019.\u0000 \u0000 </section>\u0000 \u0000 <section>\u0000 \u0000 The above article, published online on 06 May 2022 in Wiley Online Library (wileyonlinelibrary.com), has been retracted by agreement between the journal Editor-in-Chief, Giovanni Crupi; and John Wiley & Sons, Ltd. The retraction has been agreed due to significant unattributed overlap between this article and a previously published article by different authors [1]. The authors disagree with the retraction.\u0000 </section>\u0000 \u0000 <section>\u0000 \u0000 <h3> References</h3>\u0000 \u0000 \u0000 [1] J. Suresh and V. Ganesh, \"An IBSMF Optimization Technique used Distribution system with Renewable Energy Sources,” IOP Conference Series: Materials Science and Engineering 623 (2019): 012013, https://doi.org/10.1088/1757-899X/623/1/012013.\u0000 \u0000 </section>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70031","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143836038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CAAODT: Collaborated AOA and ASBO Optimization-Based Design Technique for Electrically Thick Circularly Polarized Rectangular Microstrip Antennas 基于AOA和ASBO优化的电厚圆极化矩形微带天线协同设计技术

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-16 DOI: 10.1002/jnm.70030

Geetanjali Singla, Amandeep Kaur, Amit Mittal, Manjinder Singh, Varun Malik, Ruchi Mittal

{"title":"CAAODT: Collaborated AOA and ASBO Optimization-Based Design Technique for Electrically Thick Circularly Polarized Rectangular Microstrip Antennas","authors":"Geetanjali Singla, Amandeep Kaur, Amit Mittal, Manjinder Singh, Varun Malik, Ruchi Mittal","doi":"10.1002/jnm.70030","DOIUrl":"https://doi.org/10.1002/jnm.70030","url":null,"abstract":"<div>\u0000 \u0000 Circularly polarized antennas are crucial for wireless systems due to their effectiveness in avoiding fading and multi-path interference. However, existing design techniques lack flexibility for varying frequencies and are costly due to complex fabrication. To overcome those challenges, this paper intends to propose a new Collaborated AOA and ASBO optimization-based Design Technique (CAAODT)-based Circularly Polarized Rectangular Microstrip Antenna (MSA) design technique that improves performance and flexibility for these antennas. The optimization of design parameters such as radius, height, ground plane length, ground plane width, and thickness is achieved using a novel algorithm called the Collaborated AOA and ASBO optimization (CAAO). Here, AOA is called as Archimedes Optimization Algorithm. ASBO is called Average and Subtraction-Based Optimization. This tuning process considers constraints like Axial Ratio, gain, bandwidth, Voltage Standing Wave Ratio (VSWR), and return loss. The proposed optimal design model is validated against traditional methods based on gain, VSWR, return loss, bandwidth, and axial ratio across different frequencies.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143836040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

One-Sided Schmitt Trigger-Based 11T Carbon Nanotube Field Effect Transistor—Based Static Random-Access Memory Cell for Modern IoT Embedded Devices at 32 nm Technology 基于单侧Schmitt触发器的11T碳纳米管场效应晶体管静态随机存取存储器单元，用于32纳米技术的现代物联网嵌入式设备

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-14 DOI: 10.1002/jnm.70049

Srinivasan Jayanthi, Periyasamy Raja

{"title":"One-Sided Schmitt Trigger-Based 11T Carbon Nanotube Field Effect Transistor—Based Static Random-Access Memory Cell for Modern IoT Embedded Devices at 32 nm Technology","authors":"Srinivasan Jayanthi, Periyasamy Raja","doi":"10.1002/jnm.70049","DOIUrl":"https://doi.org/10.1002/jnm.70049","url":null,"abstract":"<div>\u0000 \u0000 Researchers are working to develop a static random-access memory (SRAM) cell that consumes less power, is highly stable, and operates at high speed. This paper proposes a new one–sided Schmitt-trigger based 11 transistor (ST11T) SRAM cell using carbon nanotube field effect transistors (CNTFET) with the loop cutting transistor technique. The ST inverter, along with the read decoupled and loop cutting technique, leads to low power consumption, better stability, and low access times during its operation modes. Simulation results conducted using the Stanford university 32 nm CNTFET technology in the HSPICE simulator with VDD = 0.9 V demonstrate that the proposed ST11T shows an improvement of 99.9% in hold power compared to CONV6T, DBB7T, and CONV8T designs. The proposed cell's topology achieves a remarkable 99.9% improvement in read power compared to all the cells analyzed in this study and demonstrates a significant 96.96% enhancement in write power efficiency when compared to the SPI11T design. Also, the WSNM/RSNM of the cell is witnessed to improve by 1.35X/1.58X times its CONV6T counterpart and hence improving its stability In the nanometer regime, variations in process, voltage, and temperature (PVT) significantly impact performance parameters such as power, stability, and delay. The proposed ST11T SRAM cell has been evaluated under PVT variations and compared with state-of-the-art SRAM cells used in this study. Results indicate that the proposed SRAM cell exhibits exceptional stability and reliability despite PVT fluctuations. These simulations confirm the effectiveness and efficiency of the ST11T SRAM cell, positioning it as a highly suitable option for modern IoT embedded devices.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143827043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling and Simulation of CMOS Schmitt Trigger Circuits Using a Multi-Objective Mayfly Optimization Algorithm 基于多目标蜉蝣优化算法的CMOS施密特触发电路建模与仿真

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-10 DOI: 10.1002/jnm.70047

Ahmad Abuelrub, Fadi Nessir Zghoul, Haneen Alteehi, Bayan Bany Fawaz

{"title":"Modeling and Simulation of CMOS Schmitt Trigger Circuits Using a Multi-Objective Mayfly Optimization Algorithm","authors":"Ahmad Abuelrub, Fadi Nessir Zghoul, Haneen Alteehi, Bayan Bany Fawaz","doi":"10.1002/jnm.70047","DOIUrl":"https://doi.org/10.1002/jnm.70047","url":null,"abstract":"<div>\u0000 \u0000 Schmitt Trigger Circuits (STCs) play a crucial role in digital and analog signal processing by providing noise immunity and stable switching behavior. However, optimizing STC performance for low-power, high-speed applications remains a challenging task. This study proposes a novel approach using the Multi-Objective Mayfly Optimization Algorithm (MOMA) to optimize key STC parameters, including power dissipation, propagation delay, and hysteresis voltage. The optimization process was conducted using MATLAB, whereas LTSpice was employed for circuit-level validation using 0.25 μm/2.5 V CMOS technology. To identify the best trade-off solutions, various weighting methods were applied, including Statistical Variance, Standard Deviation, CRITIC, and Mean methods, ensuring a balanced evaluation of circuit performance. Numerical results show that the optimized STC achieved a 23% reduction in propagation delay, a 38% decrease in power dissipation, and improved noise immunity while maintaining robust switching characteristics. These findings confirm the effectiveness of MOMA in designing low-power, high-performance STCs suitable for modern VLSI, biomedical, and IoT applications.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143818446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling Single Event Transient in 28 Nm FDSOI MOSFETs Using a Neural Network Approach 基于神经网络的28nm FDSOI mosfet单事件瞬态建模

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-09 DOI: 10.1002/jnm.70050

Jiaxin Chen, Ting Xu, Xinyi Zhang, Bo Li, Lei Wang, Jianhui Bu

引用次数: 0

A High-Precision and Fast Modeling Method for Amplifiers 一种高精度快速放大器建模方法

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-09 DOI: 10.1002/jnm.70051

Jun Sun, Shaohua Zhou, Qian Lin

引用次数: 0