International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Subthreshold Drain Current Model of Cylindrical Gate All-Around Junctionless Transistor With Three Different Gate Materials","authors":"S. Manikandan,&nbsp;P. Suveetha Dhanaselvam,&nbsp;M. Karthigai Pandian","doi":"10.1002/jnm.3312","DOIUrl":"https://doi.org/10.1002/jnm.3312","url":null,"abstract":"<div>\u0000 \u0000 <p>A novel subthreshold drain current model has been developed for a cylindrical gate all-around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectively reduce the short-channel effects caused by quantum mechanical effects. The drain current equation is solved for all three operating regions to investigate the device switching characteristics and minimize the drain-induced barrier lowering (DIBL), velocity saturation, mobility degradation, and tunneling. It is understood that the triple material gate structure enhances the transport efficiency of the device. The proposed analytical model is validated by comparison with Sentaurus TCAD numerical simulator results and good agreement is found to be achieved.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142525369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal Design of Smart Antenna Arrays for Beamforming, Direction Finding, and Null Placement Using the Soft Computing Method","authors":"Avishek Chakraborty,&nbsp;Aishwarya Mishra,&nbsp;Indrasen Singh,&nbsp;Saif Ahmad,&nbsp;Mohd Javed Khan,&nbsp;Deepti Sharma,&nbsp;Ahmed Alkhayyat,&nbsp;Sumit Gupta","doi":"10.1002/jnm.3302","DOIUrl":"https://doi.org/10.1002/jnm.3302","url":null,"abstract":"<div>\u0000 \u0000 <p>The urge of modern communication system is to design and development of the smart antennas with adaptive radiation characteristics. The multifold capabilities of fourth-dimensional antenna arrays can cater that much needed adaptiveness if properly designed. Compared to the conventional arrays, the fourth-dimensional arrays have one added advantage as the ‘Time’ of all the switched-on antenna elements can be managed to generate the required amplitude and phase tapering without even using attenuators and phase shifters. However, one inherent limitation of fourth-dimensional control parameter is the generation of harmonics or sidebands. This article proposes various means of radiation pattern synthesis in fourth-dimensional linear antenna arrays with pulse shifting, pulse splitting, and a combination of both. First of all, the pulse splitting and shifting techniques are combinedly proposed by reducing the sidelobe levels and sideband levels of the beamforming antenna arrays to enhance directivities and efficiencies. Then, this mathematical proposition of the direction finding fourth-dimensional arrays is developed. Finally, broad nulls over a specific angle of arrival region are created for jamming and interference mitigation. For all these cases, the sidelobe level and the unwanted higher-order sideband levels are suppressed to reduce the unwanted interferences and power losses. The optimal time schemes for all the synthesized patterns are generated by proposing a chaos-based soft computing algorithm. The radiofrequency signals at each radiating array element are processed by the optimal time schemes proposed for specific applications. The outcomes are validated and compared with other state-of-the-art works of this domain to prove the competency of the proposed work. The qualitative and quantitative comparisons presented for beamforming array is aimed for a good improvement over other reported works by targeting ultralow (less than −40 dB) sidelobe and sideband levels. For direction-finding array, the proposed idea has also targeted ultralow sidelobes for the main as well as steered beam patterns. Furthermore, the null placement over a region has been aimed to cover more area for jamming and sidelobe reduction for interference mitigation. Overall, the optimal designs proposed for these advanced applications are beneficial for cutting-edge communication systems.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142525561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid TLM-CTLM Test Structure for Determining Specific Contact Resistivity of Ohmic Contacts","authors":"Pan Yue,&nbsp;Thanh Pham Chi,&nbsp;Anthony Holland","doi":"10.1002/jnm.3310","DOIUrl":"https://doi.org/10.1002/jnm.3310","url":null,"abstract":"<div>\u0000 \u0000 <p>Various test structures can be used to determine the specific contact resistivity of ohmic contacts. The transmission line model test structure and circular transmission line model test structure are the most commonly used. The analytical expressions of the former are straightforward and effectively describe the electrical behaviour of a contact, while the concentric geometry of the latter eliminates complications during fabrication. In this article, we present a hybrid test structure that combines the advantages of the transmission line and the circular transmission line models. The analytical expressions of the new structure are presented, and its finite-element modelling is undertaken. The effect of contact geometry on this test structure is also discussed. Using the presented test structure, determining contact parameters does not require any error corrections.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142525560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs","authors":"Changsi Wang,&nbsp;Yan Wang,&nbsp;Xin Kong","doi":"10.1002/jnm.3308","DOIUrl":"https://doi.org/10.1002/jnm.3308","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents a novel method for nonlinear modeling GaAs field-effect transistors (FETs) in a common gate (CG) configuration, which is crucial for the effective design and thorough assessment of RF switch circuits. By focusing solely on a CG-based GaAs FET for RF switch device characterization and modeling, the modeling process is streamlined compared to traditional methods that involve both CG and common source (CS) devices. The direct measurement of both DC and RF characteristics using the CG device enhances the accuracy of model parameter extraction. This approach ensures consistency in model and simulation applications as the CG topology aligns with devices commonly found in RF switch circuits. Moreover, to enhance predictive accuracy regarding the dispersion effect, an improved equation of drain-source current has been incorporated. The empirical validation of the model reveals good agreements in terms of insertion loss, isolation, and output power performance for the CG GaAs FET device, including a wide band single-pole double-throw (SPDT) switch Monolithic Microwave Integrated Circuit (MMIC).</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142525249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of etched drain based Cylindrical agate-all-around tunnel field effect transistor based static random access memory cell design","authors":"Ankur Beohar,&nbsp;Ribu Mathew,&nbsp;Darshan Sarode,&nbsp;Abhishek Kumar Upadhyay,&nbsp;Kavita Khare","doi":"10.1002/jnm.3296","DOIUrl":"https://doi.org/10.1002/jnm.3296","url":null,"abstract":"<p>This paper aims to propose a novel method for designing an static random access memory (SRAM) cell using an etched drain based Cyl GAA TFET with a hetero-substrate material and an elevated density strip. The aim is to reduce power dissipation and improve stability, as demonstrated through analysis utilizing static noise margin (SNM) as well as N-curve methods. With respect to the 16 nm MOSFET based SRAM cell, the proposed device-based SRAM cell shows significant improvements with a 68.305% reduction in leakage power, a 15.58% increase in static voltage noise margin (SVNM), an 8.623% increase in static current noise margin (SINM), an 8.152% increase in write trip voltage (WTV), a 12.86% increase in write trip current (WTI), a 27.62% increase in static power noise margin (SPNM), and a 19.95% increase in write trip power (WTP). The design is implemented and analyzed using Cadence Virtuoso software, and a novel approach of look up tables and Verilog A is utilized for the device to circuit application. These results indicate promising advancements in the design of SRAM cells, which could have significant implications for the development of advanced computer systems.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical Analysis and Design of a High-Frequency Surface Acoustic Wave Transducer: Influence of Piezoelectric Substrates and IDTs Configurations","authors":"Alonso Fernández-García,&nbsp;Verónica Iraís Solís-Tinoco,&nbsp;Miguel Ángel Alemán Arce,&nbsp;Luis Alfonso Villa-Vargas,&nbsp;Marco Antonio Ramírez Salinas,&nbsp;Juan Carlos Sánchez García","doi":"10.1002/jnm.3306","DOIUrl":"https://doi.org/10.1002/jnm.3306","url":null,"abstract":"&lt;div&gt;\u0000 \u0000 &lt;p&gt;The development of SAW transducers requires a series of steps ranging from material selection and geometry design to the selection of fabrication techniques for their characterization and validation process. Here, we use the finite element method (FEM) to present a methodology and a detailed analysis of the design of SAW transducers in a delay line configuration. First, we simulate single-finger and double-finger configurations with different geometries and designs of IDTs on two piezoelectric substrates, LiNbO&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {}_3 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; in 64&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;°&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {}^{{}^{circ}} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; YX and LiNbO&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {}_3 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; 128&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;°&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {}^{{}^{circ}} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; YX orientation, to compare the simulation results with the analytical delta model and thereby validate the simulation process, presenting Root Mean Square Error (RMSE) values ranging from 10.79 dB to 16.42 dB. With the above, we performed a comparative analysis to determine the influence of piezoelectric material and IDT configuration by studying a specific transducer design made to operate at a resonance frequency of 97.02 MHz. We compared identical designs on 128&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;°&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {}^{{}^{circ}} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; YX and 64&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;°&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {}^{{}^{circ}} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; YX orientations of LiNbO&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mn&gt;3&lt;/","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142435426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effective Electromagnetic Properties of Composite Material Computed From Neural Network Approach","authors":"Abelin Kameni,&nbsp;Den Palessonga,&nbsp;Zahraa Semmoumy,&nbsp;Mohamed Bensetti","doi":"10.1002/jnm.3303","DOIUrl":"https://doi.org/10.1002/jnm.3303","url":null,"abstract":"<p>Thanks to their lightweight, composite materials have become widely used in the automotive and aerospace industries. The design of components made from these materials is carried out by numerical modeling which can sometimes be tedious because of the need to take into account the internal structure of these materials. Obtaining the effective properties of an equivalent homogeneous material to replace the composite in our numerical models makes modeling easier. Classical homogenization approaches are not always suitable to obtain these effective properties. This article deals with an inverse problem that consists in computing the electromagnetic properties from the knowledge of the magnetic shielding effectiveness values. For different composite samples, an artificial neural network method is used to predict the effective conductivities from the magnetic shielding effectiveness measurements. The magnetic shielding effectiveness values computed from the predicted conductivities are close to those obtained from the measurements.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3303","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142404579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Guest Editorial for the Special Issue on “Recent Advances in Simulation Methods, Modelling Approaches, and Physical Implementation of Fractional-Order Devices, Circuits, and Systems”","authors":"Jesus M. Munoz-Pacheco,&nbsp;Viet-Thanh Pham","doi":"10.1002/jnm.3305","DOIUrl":"https://doi.org/10.1002/jnm.3305","url":null,"abstract":"&lt;p&gt;Fractional calculus (FC) is currently associated with phenomena modeling that shows nonlocality and long memory effects in physics and engineering. In particular, the fractional-order operators provide an excellent approach to representing a physical phenomenon with improved accuracy because they capture the contributions from all past events contrary to classical calculus, whose nature is only local. For those reasons, the fractional order can be used as an extra degree of freedom to improve practical applications in various fields, such as analog and digital circuits, chaos theory, electronic devices, cryptography, control, signal processing, robotics, theory of filters, biology, wind turbines, viscoelastic studies, ferromagnetic materials, and so on. From a science and engineering point of view, there are still open problems in fractional calculus, ranging from numerical aspects and modeling techniques to the design and implementation of devices, circuits, and systems. For instance, optimized simulation methods are still needed to compute a proper solution considering the whole memory contributions of fractional operators but simultaneously reducing the computational effort. Classical fractional calculus definitions, as well as new operators (fractional-fractal, fractional operators in the complex plane, variable order calculus, etc.), should continue being explored to obtain novel models of physical phenomena at different levels of abstraction and descriptions, such as physical, circuit, macro, behavioral, and functional. In fractional-order devices, circuits, and systems, one of the challenges consists of implementing the fractional integrodifferential operator as integrators and derivators in the frequency domain, that is, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mi&gt;s&lt;/mi&gt;\u0000 &lt;mi&gt;α&lt;/mi&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {s}^{alpha } $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;α&lt;/mi&gt;\u0000 &lt;mo&gt;∈&lt;/mo&gt;\u0000 &lt;mi&gt;R&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ alpha in R $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; using approximation methods aiming for flexible and non-bulky realizations as there is no fabricated fractional-order capacitor yet commercially available.&lt;/p&gt;&lt;p&gt;The papers in this special issue are devoted to stimulating new ideas and methods and enabling the extension of numerous applications using fractional-order devices, circuits, and systems. High-quality contributions to numerical modeling, design, optimization, and implementation of devices and systems have been reported. In the paper “Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices [&lt;span&gt;1&lt;/span&gt;],” ","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3305","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142404580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of Coplanar Stripline Bandpass Filter With Reconfigurable Filter Switch","authors":"Edison Kho,&nbsp;Banani Basu,&nbsp;Arnab Nandi","doi":"10.1002/jnm.3304","DOIUrl":"https://doi.org/10.1002/jnm.3304","url":null,"abstract":"<div>\u0000 \u0000 <p>This article has designed a bandpass filter using a coplanar stripline stub (CPS) resonator consisting of open and short-ended strip lines connected to the PIN diode switches. The use of spurline stub resonators inside CPS results in bandpass and bandstop filters, depending on the PIN diode switch configurations. The work presents a novel circuit architecture aimed at reducing the parasitic resonance of the spurline resonators and acquiring the necessary series stub characteristics. The proposed filter resonates at 6.9–9, 1.7–4.7, and 8.4 GHz when the PIN diodes are forward and reverse-biased, respectively. It also resonates at 1–2.1, 4.8–5.3, and 6.9–9 GHz when one diode is reverse-biased, and the other is connected in forward bias. An insertion loss below −0.55 dB and a return loss less than 10 dB have been obtained during simulation and measurement. The designed filter can find different applications for the 1.8 GHz GSM band, 2.4/5.8 GHz (WLAN), 3.6 GHz (WiMAX), long-term evolution (LTE), and WIFI. The filter can be used in various multi-frequency systems owing to its compact size. The measured and simulated findings of the proposed CPS spurline stub resonator wideband bandpass filters are substantially consistent.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142404423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical modeling of STFET biosensor using modulated dielectric for ultrasensitive detection of biomolecules","authors":"B. Prashanth Kumar,&nbsp;A. Vinod,&nbsp;Biswajit Jena,&nbsp;A. Arivarasi,&nbsp;Jitendra Bahadur","doi":"10.1002/jnm.3291","DOIUrl":"https://doi.org/10.1002/jnm.3291","url":null,"abstract":"<p>This paper proposed analytical modeling of a Schottky tunnel field-effect transistor (STFET)—based biosensor with adjusted gate oxide. This model is developed by resolving the Poisson's equation and calculating the parabolic potential lateral to the channel depth. The special property of the bio-transistor, which serves as a biosensor, is then included in the analytical modeling of drain current. After the biomolecule interacts with the bio-transistor, a change in the drain current was employed as a metric to determine the sensitivity. The advanced analytical modeling explored several device restrictions. A device simulation is used to maintain and validate the established and planned characteristic trend. Consequently, the suggested model can be the right solution for the best design and fabrication of a biosensor.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142404332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}