International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"A Novel Approach to Solve Nonlinear Higher Order Fractional Volterra–Fredholm Integro-Differential Equations Using Laplace Adomian Decomposition Method","authors":"Maha M. Hamood,&nbsp;Abdulrahman A. Sharif,&nbsp;Kirtiwant P. Ghadle","doi":"10.1002/jnm.70040","DOIUrl":"https://doi.org/10.1002/jnm.70040","url":null,"abstract":"<div>\u0000 \u0000 <p>This research will integrate the Laplace transform method with the Adomian Decomposition Method to semi-analytically treat nonlinear integro-fractional differential equations of the Volterra–Fredholm–Hammerstein type. The higher-order fractional derivative will be expressed in the Caputo sense, and the first-order simple degenerate and the difference kernel will be used. With this approach, the inverse Laplace transform is applied, and the solution of the equation is viewed as the sum of an endless series of components that usually converge to the solution. Numerical applications frequently employ a shortened number of terms when a closed-form solution is not possible. Lastly, a diagram displaying the arrived at and discussed solutions was shown along with illustrative examples.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143741470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Affine Linear Solution of the Nonlinear Inverse Power Flow Problem in Resistive Networks","authors":"Martin Wachs,&nbsp;Miriam Primbs","doi":"10.1002/jnm.70026","DOIUrl":"https://doi.org/10.1002/jnm.70026","url":null,"abstract":"&lt;p&gt;In the analysis of linear electrical networks, an inverse problem can be inferring all edge impedances only from known external voltage sources and measured resulting edge currents. Given all external edge voltages &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;u&lt;/mi&gt;\u0000 &lt;mi&gt;ext&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ {boldsymbol{u}}_{mathrm{ext}} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; and all resulting edge currents &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;i&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ boldsymbol{i} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, we present a new calculation method for the edge resistances &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;R&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ boldsymbol{R} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, with the assumption that the reactance is everywhere zero (e.g., a resistive network). Our considerations are based on affine subspaces and their intersection. We show, that in case of having a sequence of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;l&lt;/mi&gt;\u0000 &lt;mo&gt;≥&lt;/mo&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lge 3 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; measurements &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mfenced&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;u&lt;/mi&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;ext&lt;/mi&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/msub&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;i&lt;/mi&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mfenced&gt;\u0000 &lt;mo&gt;,&lt;/mo&gt;\u0000 &lt;mo&gt;…&lt;/mo&gt;\u0000 &lt;mo&gt;,&lt;/mo&gt;\u0000 &lt;mfenced&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;u&lt;/mi&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;ext&lt;/mi&gt;\u0000 &lt;mi&gt;l&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/msub&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;i&lt;/mi&gt;\u0000 &lt;mi&gt;l&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mfenced&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ left({boldsymbol{u}}_{{operatorname{ext}}_1},{boldsymbol{i}}_1right),dots, left({boldsymbol{u}}_{{operatorname{ext}}_l},{boldsymbol{i}}_lright) $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, we can calculate &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 ","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70026","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143717360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CNTFET Based Design of Optimized High Frequency VCII and Its Application as Mixed Mode Universal Filter Suitable for VHF Band","authors":"Smita Khole,&nbsp;Mousumi Bhanja,&nbsp;Mohammad Faseehuddin,&nbsp;Sadia Shireen,&nbsp;Worapong Tangsrirat","doi":"10.1002/jnm.70034","DOIUrl":"https://doi.org/10.1002/jnm.70034","url":null,"abstract":"<div>\u0000 \u0000 <p>In this research, Carbon Nanotube Field-effect Transistors (CNTFETs) are employed in the design of a second-generation Voltage Conveyor (VCII), an analog block. The aim of this research is to study CNTFETs as an alternative to CMOS for designing high-frequency and low-voltage circuits. The complete design procedure for VCII and its two variants, namely, modified VCII (M-VCII) and VCII minus (VCII−) is presented. This work incorporates variations in the design variables of CNTFETs, including pitch, the number of tubes, and the diameter of carbon nanotubes (CNT). The study explores the impact of these variations on the critical performance parameters of the CNTFETs. The optimal values of the design variables for each transistor are calculated through extensive simulation analysis using the Verilog-A semi-empirical Stanford Virtual-Source Carbon Nanotube Field-Effect Transistor model. The CNTFET-based VCII and its variants are optimized and validated at the supply voltage of ±0.9 V. The CNTFET-based VCII exhibits improved voltage and current bandwidths of 1.4 and 1 THz, respectively. The input/output impedance and power dissipation also validate improvement compared to CMOS implementation. To verify the performance of the proposed VCII and its variants, they are used in the design of a mixed-mode universal filter (MMUF). The proposed filter is designed for a cut-off frequency of 79 MHz and consumes 7.368 mW of power. The effects of parameter variations and noise on the VCII design are also discussed.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143699018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quasi-Vertical Diamond Schottky Barrier Diode With Sidewall-Enhanced n-Ga2O3/p-Diamond Junction Termination Extension","authors":"Chengwei Dong,&nbsp;Wang Lin,&nbsp;Tong Zhang,&nbsp;Xianyi Lv,&nbsp;Qiliang Wang,&nbsp;Liuan Li,&nbsp;Guangtian Zou","doi":"10.1002/jnm.70038","DOIUrl":"https://doi.org/10.1002/jnm.70038","url":null,"abstract":"<div>\u0000 \u0000 <p>In the present study, a quasi-vertical diamond Schottky barrier diode (SBD) with a junction termination extension (JTE) structure is designed and simulated using Silvaco software. We firstly investigate the influences of spatial location and thickness of the n-Ga₂O₃/p-diamond PN junction on the electrical performances. Subsequently, the doping concentration and width of the JTE region are optimized to achieve the highest Baliga Figure of Merit (BFOM) value, with the underlying mechanisms governing the electrical characteristics systematically analyzed. Furthermore, we also propose a sidewall-enhanced JTE structure to improve the breakdown voltage without influencing the on-resistance and turn-on voltage. In addition, it is found that the etching depth of the mesa presents minimal influence on the diamond SBD. These findings are beneficial to realizing a high-performance quasi-vertical diamond SBD.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143690009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine Learning Based Modeling of Electrical Characteristics in Triangular Gate FinFETs for Low Power Electronics","authors":"M. Hemalatha,&nbsp;N. B. Balamurugan,&nbsp;M. Suguna,&nbsp;N. Ayyanar","doi":"10.1002/jnm.70036","DOIUrl":"https://doi.org/10.1002/jnm.70036","url":null,"abstract":"<div>\u0000 \u0000 <p>Modeling and optimization of devices play a critical role in the management of product quality and the advancement of technology within the industrial sector. With the advent of novel devices and the progression of technology, these devices exhibit a multitude of interrelated factors and demonstrate a nonlinear correlation. Triangular Gate (TG) FinFETs technology has emerged as a possible alternative for addressing the limitations of traditional planar transistors in present integrated circuits (ICs). This paper presents an effective data-driven Multiobjective Optimization (MOO) with evolutionary computation (EC) techniques. By using these techniques, TG FinFETs enables the automated identification of optimal design that balances the transistor speed, power, and variability. To assist in the design of TG FinFETs, this study integrated two popular MOO techniques such as PAL and NSGA-III. These algorithms effectively handle the complicated trade-offs between diverse objectives and allow for efficient and effective TG FinFETs design optimization.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143689018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Stable Numerical Method for Distributed Order Time-Fractional Diffusion Equations","authors":"Mojtaba Fardi,&nbsp;Babak Azarnavid","doi":"10.1002/jnm.70012","DOIUrl":"https://doi.org/10.1002/jnm.70012","url":null,"abstract":"<div>\u0000 \u0000 <p>This manuscript presents a stable numerical method for solving distributed-order time-fractional diffusion equations. The method utilizes a finite difference scheme for temporal discretization and a Gaussian Hilbert–Schmidt singular value decomposition (HS-SVD) approach for spatial discretization to ensure stability. This approach provides a set of reliable basis functions that reduce ill-conditioning and capture a subspace of the Hilbert space which is dependent on the given data, resulting in a well-conditioned system of linear equations. This is one of the main and important advantages of employing this approach. Numerical experiments are conducted to validate the effectiveness and practicality of the proposed approach, demonstrating its efficiency in terms of accuracy and convergence ratio.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143632622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mitigation of Low Frequency Magnetic Field Emitted by 10/0.4 kV Substation in the School","authors":"Maja Grbić,&nbsp;Aldo Canova,&nbsp;Luca Giaccone,&nbsp;Aleksandar Pavlović,&nbsp;Sergio Grasso","doi":"10.1002/jnm.70015","DOIUrl":"https://doi.org/10.1002/jnm.70015","url":null,"abstract":"<p>The article is related to mitigation of magnetic field emitted by a 10/0.4 kV substation located in a primary school in Belgrade, Serbia. During the first testing in the classroom located directly above the substation, the measured values of magnetic flux density significantly exceeded the reference level of 40 μT prescribed by Serbian legislation, and it was concluded that the field levels at the transformer rated load could exceed the reference level of 100 μT prescribed by European Council Recommendation 1999/519/EC. For that reason, the 0.4 kV busbars located near the ceiling of the substation were removed and replaced with cables that were placed on the floor of the substation. The testing was repeated and the measured values as well as the values at the rated load were lower than 40 μT. However, above the locations where the cables were connected to the transformer and to the 0.4 kV switchboard, the field levels were still higher than in the rest of the classroom. The focus of this article is to analyze different solutions based on passive shielding for the reduction of magnetic field in these two areas. Seven solutions based on conductive shields with different geometries are analyzed. The substation and the shields are modeled by using appropriate software tools to determine which shield is the most effective. In the case of Solution 7, the lowest field values were obtained. The highest value of magnetic flux density in this case was 6.95 μT at the transformer rated load.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70015","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Hybrid System of Horizontal and Horizontal–Vertical Transmissions via the Concept of Piecewise Differential Equations","authors":"Maroua Amel Boubekeur,&nbsp;Salah Boulaaras,&nbsp;Seda Igret Araz","doi":"10.1002/jnm.70032","DOIUrl":"https://doi.org/10.1002/jnm.70032","url":null,"abstract":"<div>\u0000 \u0000 <p>This study examines the practical applications of piecewise differential equations, a powerful mathematical tool for modeling processes that occur over different time intervals, with a specific emphasis on horizontal–vertical models. This innovative approach seeks to offer a new insight into HIV infection models, focusing on both horizontal and vertical transmission routes when an infected newborn is introduced into a population. Alongside the global existence theory for piecewise models, we investigate the conditions under which solutions exist and are unique. We examine the scenarios where these new models involve fractional derivatives and analyze various patterns that emerge from their use. To facilitate this, we present the derivation of the parameterized method to solve piecewise differential equations for vertical and horizontal transmissions. Also, our study includes conducting numerical simulations to visually illustrate the different behaviors exhibited by these two models across various scenarios.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143595136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-Insensitive On-Chip Resistors for Linear Voltage-To-Current Conversion in Low-Power Voltage and Current References","authors":"Hamed Aminzadeh,&nbsp;Mohammadreza Rasekhi,&nbsp;Mohammad Danaie","doi":"10.1002/jnm.70019","DOIUrl":"https://doi.org/10.1002/jnm.70019","url":null,"abstract":"<div>\u0000 \u0000 <p>On-chip resistors are susceptible to temperature variations, affecting the performance of linear voltage-to-current (VI) conversion and vice versa. This paper introduces an approach to implement resistive networks that are highly immune to temperature variations across a wide range by combining complementary-to-absolute-temperature (CTAT) and proportional-to-absolute-temperature (PTAT) resistors existing in standard CMOS technology. The proposed resistive networks, aiming for linear VI conversion in voltage and current references (VCRs), yield ultra-low temperature coefficient (<i>TC</i>). Optimization is carried out using a multi-objective heuristic algorithm to find the optimal placement, <i>TC</i> and sizes of the elements within the final configuration. Post-layout simulation results in a standard 0.18-μm CMOS process demonstrate the possibility of implementing sub-3 ppm/°C resistors across −40 ~ 120°C temperature range, improving the prior art by more than 5×. A modern VCR configuration is implemented based on the proposed methodology, and simulation results verify the effectiveness of the modified approach in improving the accuracy of VI conversion.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solutions of the Fractional Differential Equations Including Caputo–Fabrizio, Caputo, and Integer Order Derivatives via SMV Polynomials","authors":"H. Çerdik Yaslan","doi":"10.1002/jnm.70033","DOIUrl":"https://doi.org/10.1002/jnm.70033","url":null,"abstract":"<div>\u0000 \u0000 <p>Fractional linear and nonlinear differential equations with the Caputo–Fabrizio, Caputo, and integer order derivatives are considered in this paper. An approximate solution of the problem is written as a truncated series of the shifted Morgan-Voyce (SMV) polynomials with unknown coefficients. Our goal is to compute the numerical values of the unknown coefficients. First, the Caputo–Fabrizio, Caputo, and integer order derivatives of the approximate solution expressed in terms of SMV polynomials are presented in the form of the matrix relations. The main advantage of these matrix relations is that they convert the differential equation, including three different types of derivatives, into a system of algebraic equations, which allows us to easily transfer the problem into computer programming. Furthermore, the convergence of the method is investigated in the Sobolev space. Finally, the application of the method is presented by using numerical examples. In the numerical examples, figures and tables are used to discuss the effect of different values of fractional order on the solution and to show the accuracy of the method by comparing it with existing numerical solutions.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143554319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}