International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

Modeling and Simple Parameters Extraction of Calibration Standards for Accurate Mm-Wave On-Wafer Measurements up to 110 GHz 建模和简单参数提取校准标准的精确毫米波片上测量高达110 GHz

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-05-19 DOI: 10.1002/jnm.70056

Kaiyue Liu, Shuchao Liu, Zeyu Wang, Liming Si, Mariangela Latino, Giovanni Crupi, Houjun Sun, Xiue Bao

{"title":"Modeling and Simple Parameters Extraction of Calibration Standards for Accurate Mm-Wave On-Wafer Measurements up to 110 GHz","authors":"Kaiyue Liu, Shuchao Liu, Zeyu Wang, Liming Si, Mariangela Latino, Giovanni Crupi, Houjun Sun, Xiue Bao","doi":"10.1002/jnm.70056","DOIUrl":"https://doi.org/10.1002/jnm.70056","url":null,"abstract":"<div>\u0000 \u0000 In this paper, a simple and novel residual parameter extraction technique is provided for impedance substrate calibration standards. It uses the measured scattering parameters of four calibration standards, that is the THRU, SHORT, OPEN, and LOAD standards, with only the DC resistance known in advance. Based on the electric structures and the frequency range of interest, the equivalent circuit of each standard is provided. The residual parameters in the equivalent circuits might show frequency dependence or frequency non-dependence, which are both considered in the following analysis. In the parameter extraction algorithm, no other calibration is needed. Instead, only the recorded raw data of the four standards are used, by assuming that the two ports of the SHORT, OPEN, and LOAD standards are symmetric and identical. A series of validation experiments are performed on a commercial calibration substrate, within the broad frequency range from 200 MHz to 110 GHz. The results have shown that the extracted residual parameters by using the proposed method are in very good consistency with the values provided by the manufacturer. In addition, the extracted parameters are further used for SOLT calibration, by measuring another group of calibration standards on the commercial calibration substrate. The calibration accuracy and reliability are further verified by using another open structure, a transmission line, and a mismatched load.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144085039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Optimization of a SAW Sensor With Improved TCF at High Temperatures Using Pt-Silicon Oxide IDT 利用pt -硅氧化物IDT改进高温TCF的SAW传感器的设计与优化

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-05-12 DOI: 10.1002/jnm.70054

Aditya Kumar Nagmani, Basudeba Behera

{"title":"Design and Optimization of a SAW Sensor With Improved TCF at High Temperatures Using Pt-Silicon Oxide IDT","authors":"Aditya Kumar Nagmani, Basudeba Behera","doi":"10.1002/jnm.70054","DOIUrl":"https://doi.org/10.1002/jnm.70054","url":null,"abstract":"<div>\u0000 \u0000 This paper investigates two conventional and four proposed structures designed by patterning the SiO2 film over the (0°, 138.5°, 26.6°) cut langasite (LGS) substrate. The results are compared with those obtained with a langasite resonator designed without the SiO2 film. All langasite structures are investigated at elevated temperatures up to 600°C using a 3-D finite element modeling method. The proposed structures are optimized for the lowest temperature coefficient of frequency (TCF) and high coupling factor (k2) as a function of SiO2 film thickness for the operating temperature range. The optimized structure reduces the TCF to 2.52 ppm/°C at room temperature and for high temperatures to as low as 13.78 ppm/°C at 600°C. An enhanced coupling factor of 0.05% is obtained for the optimized structure at room temperature compared to the conventional structures. Thus, the systematically optimized structure may be selected to realize a temperature sensor that can perform at elevated temperatures.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143939198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Parametric Analysis of Ferroelectric Material Based Nanoscale Device Structure 基于铁电材料的纳米器件结构设计与参数分析

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-05-08 DOI: 10.1002/jnm.70055

Mandeep Singh, Tarun Chaudhary, Balwinder Raj

{"title":"Design and Parametric Analysis of Ferroelectric Material Based Nanoscale Device Structure","authors":"Mandeep Singh, Tarun Chaudhary, Balwinder Raj","doi":"10.1002/jnm.70055","DOIUrl":"https://doi.org/10.1002/jnm.70055","url":null,"abstract":"<div>\u0000 \u0000 This research article introduces a novel nanoscale ferroelectric field effect transistor (FeFET) structure design. The research work involves the analysis and simulation of semiconductor devices based on ferroelectric material, focusing on key parameters such as drain current, transconductance, acceptor concentrations, energy band diagram, and electric potential. The FeFET's performance is thoroughly investigated with respect to ON current, OFF current, and sub-threshold slope. Parametric analysis of the FeFET is conducted to explore its suitability for low-power circuit applications. The presented FeFET device exhibits impressive characteristics, including a high ON current (ION = 4.5 × 10−5 A) and a low OFF current (IOFF = 8.4 × 10−12 A). To assess its performance, the FeFET is modeled and simulated using TCAD software. The study also investigates the influence of various parameters, such as gate length, gate oxide thickness, and ferroelectric film thickness, on the device's behavior and performance. This comprehensive research provides valuable insights into the design and optimization of nanoscale FeFET structures based on ferroelectric materials.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143925787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Double-Gate PIN Photodiode for Improving Switching Performance 一种改善开关性能的新型双栅PIN光电二极管

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-05-07 DOI: 10.1002/jnm.70037

Zeynab Yazdanibakhsh-Poodeh, Seyed Amir Hashemi

{"title":"A Novel Double-Gate PIN Photodiode for Improving Switching Performance","authors":"Zeynab Yazdanibakhsh-Poodeh, Seyed Amir Hashemi","doi":"10.1002/jnm.70037","DOIUrl":"https://doi.org/10.1002/jnm.70037","url":null,"abstract":"<div>\u0000 \u0000 In this manuscript, a novel double-gate PIN (DGPIN) photodiode has been proposed which exhibits faster changing of the photocurrent amplitude against changing of the light intensity. So, it can improve the slow switching operation of the ordinary PIN (OPIN) photodiode. In the proposed DGPIN, two metal-oxide-semiconductor (MOS) contacts (called the gates) on both sides of the intrinsic region have been considered. By biasing the gates, the potential barrier in the energy bands between the anode and cathode is decreased. So, the generated carriers can drift through the intrinsic region faster and the recovery time is reduced. Also, it has been shown that the forward and reverse trajectories in the photocurrent-light intensity curve (formed by increasing and decreasing of the illuminating light intensity, respectively) are closer in the DGPIN which indicates more linear current–light behavior for the DGPIN than the OPIN. For evaluating the linearity of the current–light behavior, the corresponding curves have been simply modeled by fitting ellipses. For the fitting ellipses, closer eccentricity to 1 indicates more linear current–light behavior and larger rotation angle indicates smaller recovery time of the device. By using this simple model, the effects of changing the physical and geometrical parameters of the proposed DGPIN on its linear operation and recovery time have been investigated.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Efficient Frequency Compensation Approach for Multi-Stage CMOS Amplifiers 一种有效的多级CMOS放大器频率补偿方法

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-05-07 DOI: 10.1002/jnm.70024

Mohammad Saeed Khadem, Shaban Rezaei Borjlu, Bahador Makkiabadi

{"title":"An Efficient Frequency Compensation Approach for Multi-Stage CMOS Amplifiers","authors":"Mohammad Saeed Khadem, Shaban Rezaei Borjlu, Bahador Makkiabadi","doi":"10.1002/jnm.70024","DOIUrl":"https://doi.org/10.1002/jnm.70024","url":null,"abstract":"<div>\u0000 \u0000 Leveraging Miller's concept, a general approach for multi-stage amplifier frequency compensation is proposed. The idea is repeating a Miller pattern on intermediate nodes. In this way Miller capacitor at the output of a differential gain stage, manipulates poles and zeros locations to achieve the desired frequency response. The idea is applied to four and five-stage amplifiers. The linear transfer function (TF) and poles-zeros formulations are calculated for both amplifiers while circuit implementations are simulated using 0.18 μm CMOS technology. According to both theoretical description and simulation results, the proposed frequency compensation appropriately stabilized the amplifier with excellent performance. Obtaining more than 13 MHz for GBW with 83° phase margin while whole the four-stage amplifier consumes less than 320 μW. Ample simulation results are provided to express the reliability and robustness of the proposed approach. In this view, the proposed compensation method besides its design methodology can be used for almost any analog and mix-mode systems such as modulators, sensors, and data converters.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a DGS-Based Slotted Body Worn Textile Antenna for Advanced IoT and AI Integration 先进物联网与人工智能集成的基于dgs的开槽体磨损织物天线的开发

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70043

S. T. Ali, Vinod Kumar Singh, Zakir Ali, V. K. Sharma, Ompal, Ramesh Kumar Verma

{"title":"Development of a DGS-Based Slotted Body Worn Textile Antenna for Advanced IoT and AI Integration","authors":"S. T. Ali, Vinod Kumar Singh, Zakir Ali, V. K. Sharma,  Ompal, Ramesh Kumar Verma","doi":"10.1002/jnm.70043","DOIUrl":"https://doi.org/10.1002/jnm.70043","url":null,"abstract":"<div>\u0000 \u0000 In this article, a novel textile jeans antenna is introduced that can cover range of frequencies from 3.85 to 14.58 GHz with a return loss of −23.02 dB at its lower working frequency of 4.8 GHz. To perform the simulation, the antenna is designed on the jeans substrate with <math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>ϵ</mi>\u0000 <mi>r</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {epsilon}_r $$</annotation>\u0000 </semantics></math> of 1.7 and size of 43.6 × 49 × 1 mm3 (0.7λ0 × 0.8λ0 × 0.016λ0 at frequency 4.8 GHz) Moreover, for improving bandwidth, defective ground structure (DGS) is used which provides a wide bandwidth range of 116.44%. The peak gain is found to be 4.5, 4.4, and 4.3 dBi at 4.8, 8.98, and 13.45 GHz, respectively. However, the efficiency is found more than 70% in operating band. The proposed antenna has omni-directional pattern for radiation and has good bending and wet characteristics suitable for IoT application like Wi-Max and AI, IoT devices such as automotive and robotics. The specific absorption ratio at 4.8 GHz is found to be maximum near the feed point which is 0.00596 W/kg for 10 g of tissue which is low as compared to standard value of 1.6 W/kg for 10 g of tissue.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transient Nonlinear Electrothermal Adjoint Sensitivity Analysis for HVDC Cable Joints 高压直流电缆接头瞬态非线性电热伴随灵敏度分析

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70035

M. Greta Ruppert, Yvonne Späck-Leigsnering, Herbert De Gersem

引用次数: 0

ML-Based Prediction of Dual-Channel Core Gate Junctionless FET Device Parameters Using XGBoost 基于ml的XGBoost双通道核栅无结FET器件参数预测

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70053

Rittik Kushwaha, Abhishek Raj, Shashi Kant Sharma

{"title":"ML-Based Prediction of Dual-Channel Core Gate Junctionless FET Device Parameters Using XGBoost","authors":"Rittik Kushwaha, Abhishek Raj, Shashi Kant Sharma","doi":"10.1002/jnm.70053","DOIUrl":"https://doi.org/10.1002/jnm.70053","url":null,"abstract":"<div>\u0000 \u0000 This study investigates the application of machine learning technique especially the ensemble learning category algorithm, that is, ‘Extreme Gradient Boosting (XGBoost)’ for making predictions of the various characteristics of Dual Channel Core Gate Junctionless Field Effect Transistors (DCCG-JLFET). Using data generated from the Technology Computer Aided Design (TCAD) simulations, the machine learning model is trained to predict the behavior of Dual Channel Core Gate Junctionless Field Effect Transistors based on various physical parameters. The objective of the model is to reveal the relationships and establish relationships among various parameters including drain current (IDS) and various short channel effects like subthreshold slope (SS), threshold voltage (Vth), ON current (ION) and OFF current (IOFF). Comparative analysis reveals that the ML model achieves an accuracy of 98.7% for current voltage curve prediction. Also, scatter plots reveal MSE of 5.96 × 10−9 for IDS, 6.98 × 10−8 for Vth, 3.24 × 10−9 for ION, 4.85 × 10−9 for IOFF, and 9.84 × 10−8 for SS and RMSE of 7.72 × 10−5 for IDS, 2.64 × 10−4 for Vth, 5.69 × 10−5 for ION, 6.96 × 10−5 for IOFF, and 3.14 × 10−4 for SS and R2-score of 0.91 for IDS, 0.99 for Vth, 0.96 for ION, 0.99 for IOFF, and 0.97 for SS when compared to TCAD Simulations. This ML approach can be effectively applied in optimizing and designing semiconductor devices.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing an Axial Flux Halbach Array Magnetic Gear Torque Profile Using the Taguchi DOE Method 利用田口DOE法增强轴向磁通Halbach阵列磁齿轮转矩廓形

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-28 DOI: 10.1002/jnm.70014

Ali Harooni, Mahdi Abolghasemi, Aghil Ghaheri, Ebrahim Afjei

{"title":"Enhancing an Axial Flux Halbach Array Magnetic Gear Torque Profile Using the Taguchi DOE Method","authors":"Ali Harooni, Mahdi Abolghasemi, Aghil Ghaheri, Ebrahim Afjei","doi":"10.1002/jnm.70014","DOIUrl":"https://doi.org/10.1002/jnm.70014","url":null,"abstract":"<div>\u0000 \u0000 Due to the attractive advantages of magnetic gears resulting from contactless power transmission, these magnetic devices are replacing their mechanical counterparts. An axial flux magnetic gear with a gear ratio of 5.25 is investigated in this article. The high-speed rotor is utilized with Halbach array permanent magnets (PMs). The entity of distance between high-speed rotor (HSR) magnets reduces flux leakage and subsequently reduces torque ripple. To increase the maximum applicable torque and reduce the torque ripple on both sides, eight design parameters have been adopted and optimized using Taguchi method. The Taguchi method reveals each parameter's importance, rank, and influence on the proposed gear performance in terms of percentage by using the signal-to-noise ratios and analysis of variance, respectively. It is notable that this method decreases the required experiments, significantly. Low-speed rotor (LSR) maximum applicable torque, LSR, and HSR torque ripples have been studied as single objective optimization problems. Furthermore, multiobjective function is studied as well and optimum levels of control factors are derived. In addition, the participation percentage of each control factor is obtained. The obtained results by 3D finite element method (FEM) indicate the performance improvement of the optimized structure. Finally, rotors' stresses have been studied to ensure structural stability and its effect on the overall performance.\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

RETRACTION: An Optimal Hybrid Control Scheme to Achieve Power Quality Enhancement in Micro Grid Connected System 微电网并网系统中提高电能质量的最优混合控制方案

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-16 DOI: 10.1002/jnm.70031

{"title":"RETRACTION: An Optimal Hybrid Control Scheme to Achieve Power Quality Enhancement in Micro Grid Connected System","authors":"","doi":"10.1002/jnm.70031","DOIUrl":"https://doi.org/10.1002/jnm.70031","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 \u0000 RETRACTION: P. Rajesh, F. H. Shajin, B. Rajani, and D. Sharma, “ An Optimal Hybrid Control Scheme to Achieve Power Quality Enhancement in Micro Grid Connected System,” International Journal of Numerical Modelling 35, no. 6 (2022): e3019, https://doi.org/10.1002/jnm.3019.\u0000 \u0000 </section>\u0000 \u0000 <section>\u0000 \u0000 The above article, published online on 06 May 2022 in Wiley Online Library (wileyonlinelibrary.com), has been retracted by agreement between the journal Editor-in-Chief, Giovanni Crupi; and John Wiley & Sons, Ltd. The retraction has been agreed due to significant unattributed overlap between this article and a previously published article by different authors [1]. The authors disagree with the retraction.\u0000 </section>\u0000 \u0000 <section>\u0000 \u0000 <h3> References</h3>\u0000 \u0000 \u0000 [1] J. Suresh and V. Ganesh, \"An IBSMF Optimization Technique used Distribution system with Renewable Energy Sources,” IOP Conference Series: Materials Science and Engineering 623 (2019): 012013, https://doi.org/10.1088/1757-899X/623/1/012013.\u0000 \u0000 </section>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70031","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143836038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0