International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献_第2页

A Hybrid System of Horizontal and Horizontal–Vertical Transmissions via the Concept of Piecewise Differential Equations

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-11 DOI: 10.1002/jnm.70032

Maroua Amel Boubekeur, Salah Boulaaras, Seda Igret Araz

{"title":"A Hybrid System of Horizontal and Horizontal–Vertical Transmissions via the Concept of Piecewise Differential Equations","authors":"Maroua Amel Boubekeur, Salah Boulaaras, Seda Igret Araz","doi":"10.1002/jnm.70032","DOIUrl":"https://doi.org/10.1002/jnm.70032","url":null,"abstract":"<div>\u0000 \u0000 <p>This study examines the practical applications of piecewise differential equations, a powerful mathematical tool for modeling processes that occur over different time intervals, with a specific emphasis on horizontal–vertical models. This innovative approach seeks to offer a new insight into HIV infection models, focusing on both horizontal and vertical transmission routes when an infected newborn is introduced into a population. Alongside the global existence theory for piecewise models, we investigate the conditions under which solutions exist and are unique. We examine the scenarios where these new models involve fractional derivatives and analyze various patterns that emerge from their use. To facilitate this, we present the derivation of the parameterized method to solve piecewise differential equations for vertical and horizontal transmissions. Also, our study includes conducting numerical simulations to visually illustrate the different behaviors exhibited by these two models across various scenarios.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143595136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-Insensitive On-Chip Resistors for Linear Voltage-To-Current Conversion in Low-Power Voltage and Current References

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-06 DOI: 10.1002/jnm.70019

Hamed Aminzadeh, Mohammadreza Rasekhi, Mohammad Danaie

{"title":"Temperature-Insensitive On-Chip Resistors for Linear Voltage-To-Current Conversion in Low-Power Voltage and Current References","authors":"Hamed Aminzadeh, Mohammadreza Rasekhi, Mohammad Danaie","doi":"10.1002/jnm.70019","DOIUrl":"https://doi.org/10.1002/jnm.70019","url":null,"abstract":"<div>\u0000 \u0000 <p>On-chip resistors are susceptible to temperature variations, affecting the performance of linear voltage-to-current (VI) conversion and vice versa. This paper introduces an approach to implement resistive networks that are highly immune to temperature variations across a wide range by combining complementary-to-absolute-temperature (CTAT) and proportional-to-absolute-temperature (PTAT) resistors existing in standard CMOS technology. The proposed resistive networks, aiming for linear VI conversion in voltage and current references (VCRs), yield ultra-low temperature coefficient (<i>TC</i>). Optimization is carried out using a multi-objective heuristic algorithm to find the optimal placement, <i>TC</i> and sizes of the elements within the final configuration. Post-layout simulation results in a standard 0.18-μm CMOS process demonstrate the possibility of implementing sub-3 ppm/°C resistors across −40 ~ 120°C temperature range, improving the prior art by more than 5×. A modern VCR configuration is implemented based on the proposed methodology, and simulation results verify the effectiveness of the modified approach in improving the accuracy of VI conversion.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solutions of the Fractional Differential Equations Including Caputo–Fabrizio, Caputo, and Integer Order Derivatives via SMV Polynomials

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-05 DOI: 10.1002/jnm.70033

H. Çerdik Yaslan

{"title":"Solutions of the Fractional Differential Equations Including Caputo–Fabrizio, Caputo, and Integer Order Derivatives via SMV Polynomials","authors":"H. Çerdik Yaslan","doi":"10.1002/jnm.70033","DOIUrl":"https://doi.org/10.1002/jnm.70033","url":null,"abstract":"<div>\u0000 \u0000 <p>Fractional linear and nonlinear differential equations with the Caputo–Fabrizio, Caputo, and integer order derivatives are considered in this paper. An approximate solution of the problem is written as a truncated series of the shifted Morgan-Voyce (SMV) polynomials with unknown coefficients. Our goal is to compute the numerical values of the unknown coefficients. First, the Caputo–Fabrizio, Caputo, and integer order derivatives of the approximate solution expressed in terms of SMV polynomials are presented in the form of the matrix relations. The main advantage of these matrix relations is that they convert the differential equation, including three different types of derivatives, into a system of algebraic equations, which allows us to easily transfer the problem into computer programming. Furthermore, the convergence of the method is investigated in the Sobolev space. Finally, the application of the method is presented by using numerical examples. In the numerical examples, figures and tables are used to discuss the effect of different values of fractional order on the solution and to show the accuracy of the method by comparing it with existing numerical solutions.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143554319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Application of Spoof Surface Plasmon Polaritons for the Design of Sequential Load Modulated Balanced Amplifier

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-03 DOI: 10.1002/jnm.70029

Hongbo Zhang, Giovanni Crupi, Zhen Liao, Jialin Cai

{"title":"Application of Spoof Surface Plasmon Polaritons for the Design of Sequential Load Modulated Balanced Amplifier","authors":"Hongbo Zhang, Giovanni Crupi, Zhen Liao, Jialin Cai","doi":"10.1002/jnm.70029","DOIUrl":"https://doi.org/10.1002/jnm.70029","url":null,"abstract":"<div>\u0000 \u0000 <p>Spoof surface plasmon polariton (SSPP) controls and manipulates electromagnetic waves in the microwave frequency range through ultrathin corrugated metallic strips, making it suitable for use with microwave devices. In the current state of research, SSPPs are primarily used to design passive circuits and single-device power amplifiers (PAs). This study combines the SSPP design methodology with sequential load modulated balanced amplifiers (SLMBA) topology to develop a high back-off (BO) efficiency load-modulated PA. By using the proposed SSPP theory and method, input and output matching networks based on slow-wave metamaterials are designed for balanced amplifiers (BAs) and carrier amplifiers (CAs) in the SLMBA. The designed metamaterial-based SLMBA was fabricated and demonstrated to have a saturated output power of 43 dBm, a BO range of 10 dB, and a BO efficiency maintained above 56.5% within the frequency range of 1.8–2.1 GHz, with a size of 72 mm × 101 mm, which represents a 38% reduction in size when compared to traditional transmission-line-based SLMBAs. A 20-MHz 5G NR signal has been used to implement digital pre-distortion (DPD) and enhance SLMBA linearity.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143530220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Hybrid Algorithm for Source Reconstruction Method in Near-Field Prediction

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-03 DOI: 10.1002/jnm.70028

Chenxi Li, Jian Pang, Qingzhi Wu, Yuehang Xu

{"title":"A Novel Hybrid Algorithm for Source Reconstruction Method in Near-Field Prediction","authors":"Chenxi Li, Jian Pang, Qingzhi Wu, Yuehang Xu","doi":"10.1002/jnm.70028","DOIUrl":"https://doi.org/10.1002/jnm.70028","url":null,"abstract":"<div>\u0000 \u0000 <p>Advanced packaging in electronic systems presents new challenges for electromagnetic interference issues. The source reconstruction method (SRM) based on near-field scanning provides a solution for locating electromagnetic interference sources and reconstructing the electromagnetic field inside the package. The traditional SRM based on least squares methods relies on phase information, leading to expensive measurement facilities and complex testing processes. As a result, phaseless SRMs with lower testing requirements have become a research hotspot. However, these methods require solving a nonlinear equation, which lacks an explicit solution and poses difficulties in extracting the equivalent radiation source. To address this issue, a new phaseless SRM that achieves high precision and efficiency is proposed. The method combines the advantages of the differential evolution (DE) algorithm with the covariance matrix adaptation evolution strategy (CMA-ES) algorithm, offering fast convergence speed and high accuracy. Compared to the conventional DE algorithm, the proposed hybrid method reduces the error of the reconstructed field by an average of 9% and improves the accuracy of the predicted field from 82% to 85% while accelerating convergence.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143530221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Forecasting Approach to Schedule Electric Vehicle Charging Using Real-Time Data

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-02-21 DOI: 10.1002/jnm.70027

Arpana Singh, Uma Nangia, M. Rizwan

{"title":"A Novel Forecasting Approach to Schedule Electric Vehicle Charging Using Real-Time Data","authors":"Arpana Singh, Uma Nangia, M. Rizwan","doi":"10.1002/jnm.70027","DOIUrl":"https://doi.org/10.1002/jnm.70027","url":null,"abstract":"<div>\u0000 \u0000 <p>The rapid adoption of electric vehicle (EV) has increased the need for precise demand estimates to ensure grid stability, reduce operational costs, and strategically plan the expansion of charging stations. Existing forecasting approaches struggle to capture the complexity and change of the EV load patterns, especially over time. The effective development and optimization of the charging infrastructure are critically dependent on accurate EV load forecasting. This paper proposes a hybrid forecasting approach that combines long short-term memory models with advanced decomposition methods like empirical mode decomposition, ensemble empirical mode decomposition, and complete ensemble empirical mode decomposition using adaptive noise and seasonal-trend decomposition to address this challenge. The proposed framework is tested for 15, 30, 60, and 120 min to show its adaptability and robustness. Statistical evaluations show that decomposition approaches using long short-term memory increase predicting accuracy across all time intervals. STL-LSTM reduces the forecast error by 52.38% between hybrid methods. Kolmogorov–Smirnov, Shapiro–Wilk, and <i>t</i>-tests confirm the results, improving consistency and dependability. This paper shows that hybrid decomposition-based forecasting models can scale and accurately manage future EV charging demands, overcoming the limits of traditional techniques.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143466126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Linear Electrical Circuits Described by a Novel Constant Proportional Caputo Hybrid Operator

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-02-14 DOI: 10.1002/jnm.70023

V. F. Morales-Delgado, J. F. Gómez-Aguilar, M. A. Taneco-Hernández, E. Pérez-Careta, J. Torres-Jiménez, Mohammad Esmael Samei

{"title":"Linear Electrical Circuits Described by a Novel Constant Proportional Caputo Hybrid Operator","authors":"V. F. Morales-Delgado, J. F. Gómez-Aguilar, M. A. Taneco-Hernández, E. Pérez-Careta, J. Torres-Jiménez, Mohammad Esmael Samei","doi":"10.1002/jnm.70023","DOIUrl":"https://doi.org/10.1002/jnm.70023","url":null,"abstract":"<div>\u0000 \u0000 <p>In this work, we obtain analytical solutions via Laplace transform of fractional electrical circuits by using the proportional Caputo derivative with power law. Numerical simulations were obtained to see the impact of the memory concept represented by the fractional parameter order. Also, we collect a lot of experimental data obtained in our laboratory for an <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>RC</mi>\u0000 </mrow>\u0000 <annotation>$$ RC $$</annotation>\u0000 </semantics></math> circuit, and for each case, we calculate the value of the fractional-order by using a particle swarm optimization approach. The results obtained reveals that the experimental data deviate slightly from that obtained in the integer-order behavior and the application of the proportional Caputo derivative best fits the experimental data.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Compact Dual Port MIMO Antenna for X, Ku, K, Ka, and V Band Applications

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-02-09 DOI: 10.1002/jnm.70018

Raj Kumar Mistri, Santosh Kumar Mahto, Subhajit Paul, Prabina Pattanayak, Gajendra Kant Mishra

{"title":"Compact Dual Port MIMO Antenna for X, Ku, K, Ka, and V Band Applications","authors":"Raj Kumar Mistri, Santosh Kumar Mahto, Subhajit Paul, Prabina Pattanayak, Gajendra Kant Mishra","doi":"10.1002/jnm.70018","DOIUrl":"https://doi.org/10.1002/jnm.70018","url":null,"abstract":"<div>\u0000 \u0000 <p>The miniaturized dual-element triple broadband Multiple-Input-Multiple-Output (MIMO) antenna is suggested. By creating a partial ground plane beneath the triple snake-head-shaped patch, three wide bandwidths are achieved. The investigated −10 dB impedance bandwidths are 10.2–18.4 GHz, 23.6–29.4 GHz, and 33.4–59.4 GHz, with the fractional bandwidth (FBW) 57.34%, 21.88%, and 56%, respectively. The isolation is improved by joining the microstrip line between the antennas in partial ground plane. The diversity performance of MIMO antenna is examined by the computational analysis of mean effective gain (MEG), diversity gain (DG), total active reflection coefficient (TARC), envelope correlation coefficient (ECC), ergodic channel capacity (CC), and channel capacity loss (CCL). Prototyping of the suggested design is carried out on FR-4 dielectric substrate with electrical dimensions 0.524<i>λ</i><sub>0</sub> × 0.715<i>λ</i><sub>0</sub> mm<sup>2</sup> (where <i>λ</i><sub>0</sub> is free space wavelength at center frequency of lowest operating band), dielectric constant 4.4, and loss tangent 0.02. The isolation, ECC, peak gain, average total efficiency, and average CC over the operating bands 10.2–18.4 GHz, 23.6–29.4 GHz, and 33.4–59.4 GHz are (−18.8 dB, 0.027, 4.50 dB, 50.81%, 9.46 bps/Hz), (21.4 dB, 0.057, 4.92 dB, 57.03%, 9.74 bps/Hz), and (−31.8 dB, 0.0082, 5.79 dB, 45.9%, 9.22 bps/Hz), respectively. The proposed design covers X (40%), Ku, K (37.7%), Ka (69.2%), and V (55.4%) frequency bands. A good agreement was found between the measurement and simulation.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Frequency Noise Analysis of GSCG Double-Gate MOSFET in the Subthreshold Region

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-02-07 DOI: 10.1002/jnm.70025

Srikrishna Bardhan, Pradipta Kumar Jena, Sarita Misra, Sanghamitra Das, Sudhansu Kumar Pati

{"title":"Low-Frequency Noise Analysis of GSCG Double-Gate MOSFET in the Subthreshold Region","authors":"Srikrishna Bardhan, Pradipta Kumar Jena, Sarita Misra, Sanghamitra Das, Sudhansu Kumar Pati","doi":"10.1002/jnm.70025","DOIUrl":"https://doi.org/10.1002/jnm.70025","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents the noise analysis of double-gate MOSFETs with gate stacking and channel grading (GSCG). In particular, the low-frequency noise, flicker noise, or thermal noise power spectral densities are presented by varying different geometrical parameters of the device, such as the length and thickness of the channel (<i>L</i> and <i>t</i><sub>si</sub>, respectively), and the thickness of the gate-oxide and high-<i>k</i> insulating material (<i>t</i><sub>1</sub> and <i>t</i><sub>2</sub>, respectively) in the subthreshold region. Prior to developing the mathematical formulations for flicker noise and thermal noise PSDs, we first propose the analytical models for drain current and inversion charge density. Published experimental results are used to validate the drain current model and flicker noise model (both normalized and unnormalized). The results obtained from the model show excellent matching with the experimental data. Our findings show that the effect of flicker noise decreases as the operating frequency increases. Owing to the reduced carrier mobility in the conducting channel and carrier scattering at the oxide–semiconductor interfaces of the proposed device, the device's performance can be enhanced by lowering the flicker noise level as the channel length and the thicknesses of both insulating materials (SiO<sub>2</sub> and HfO<sub>2</sub>) increase. Similarly, the thermal noise PSD can be reduced by increasing the channel thickness. Our proposed device's flicker and thermal noise study in the subthreshold region points to a possible contender that can be employed for both analog/RF applications and a wide range of frequencies.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Simulation and Investigation of Nanoscale Organic Field-Effect Transistor With Varying Channel Thickness

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-01-30 DOI: 10.1002/jnm.70020

Yogesh Thakur, Mamta Khosla, Balwinder Raj

{"title":"Numerical Simulation and Investigation of Nanoscale Organic Field-Effect Transistor With Varying Channel Thickness","authors":"Yogesh Thakur, Mamta Khosla, Balwinder Raj","doi":"10.1002/jnm.70020","DOIUrl":"https://doi.org/10.1002/jnm.70020","url":null,"abstract":"<div>\u0000 \u0000 <p>Specific characteristics of organic field-effect transistors (OFETs), including channel thickness, ON-current, OFF-current, SS, threshold voltage, and turn-on voltage, are influenced by the fabrication process. The design and realization of circuits based on OFETs demand their expertise and oversight. An OFET with palladium (Pd) source/drain (S/D) electrodes, NdTaNO as dielectric material, pentacene as the active layer, and the aluminum gate electrode is simulated using Silvaco TCAD. The device's performance parameters, such as drain current, threshold voltage, current on/off ratio, transconductance, and subthreshold slope, are analyzed for varying channel thickness from 10 to 100 nm. Overall improvement in <i>I</i><sub>ON</sub> and <i>V</i><sub>TH</sub> is observed with a decrease in <i>t</i><sub>ch</sub> value. Various fabrication factors, including the management of dewetting issues, tensile strain, and compressive stress in OSC films, which are closely related to the channel thickness of the device, require careful consideration to effectively prolong the operational lifespan of OFET devices. These issues primarily arise when the thickness of the OSC is either extremely minimal or excessively large. Such extremes can result in a reduced lifespan of the device and may compromise the overall performance of the circuit. Therefore, in the analysis presented in this paper, it was discovered that the optimal device conditions and satisfactory operational behavior are achieved at thickness (<i>t</i><sub>ch</sub>) values of 60 and 50 nm. These values meet the optimal <i>t</i><sub>ch</sub> requirement for OFET fabrication.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143121101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0