International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Development of Fe-Based Amorphous/Nanocrystalline Alloys for Electromagnetic Interference Mitigation","authors":"Yimin Guo,&nbsp;Rujun Ma,&nbsp;Yuan Li,&nbsp;Xinrong Chi,&nbsp;Kunyu Chen,&nbsp;Tengyun Su,&nbsp;Yuchen Wei,&nbsp;Ziwei He,&nbsp;Miaonan Liu,&nbsp;Junyi Xiong,&nbsp;Wenxi Zhao,&nbsp;Xiaoqiang Li,&nbsp;Qingyu Wang,&nbsp;Xuchao Wang,&nbsp;Zhi Sun,&nbsp;Bing Liu,&nbsp;Xiaoyue Zhang,&nbsp;Xin He,&nbsp;Lingrui Zheng,&nbsp;Peng Qin","doi":"10.1002/jnm.70076","DOIUrl":"https://doi.org/10.1002/jnm.70076","url":null,"abstract":"<div>\u0000 \u0000 <p>Growing concerns about electromagnetic radiation from communication technologies such as 5G have prompted a search for effective microwave-absorbing materials to mitigate potential health risks. This study focuses on the development of Fe-based amorphous/nanocrystalline alloys as microwave absorbers, with specific emphasis on achieving cost-effectiveness, reduced thickness, and superior absorption capabilities. FePC alloy powders, treated through thermal annealing and ball milling (synergistic processing), exhibit enhanced saturation magnetization and superior microwave absorption properties. The powders, with small particle sizes and high surface areas, demonstrate excellent absorption, achieving a minimum reflection loss (RL) of −30.1 dB at 12.8 GHz with a 5.3 GHz absorption bandwidth at 2 mm thickness. The results highlight the promising potential of these materials for practical applications in reducing electromagnetic interference, offering a combination of high performance, low cost, and easy processing.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiobjective Design and Performance Evaluation of III–V High-k Surrounding Gate Tunnel Field Effect Transistors Using Machine Learning Approaches","authors":"V. Charumathi,&nbsp;N. B. Balamurugan,&nbsp;M. Suguna,&nbsp;D. Sriram Kumar","doi":"10.1002/jnm.70072","DOIUrl":"https://doi.org/10.1002/jnm.70072","url":null,"abstract":"<div>\u0000 \u0000 <p>In this work, utilising the MultiObjective Optimisation (MOO) framework, III–V tunnel field effect transistors with surrounding gate (III–V TFETs [SG]) have been designed to optimise speed, power and variation for improved device logic parameters. III–V TFET are enhanced by combining the advantages of high-k Hafnium dioxide (HfO₂) dielectric and surrounding gate technologies. III–V TFETs (SG) have collaborated with indium arsenide (InAs) and gallium antimonide (GaSb) to offer better electron mobility, which further improves device performance. By augmenting the MOO framework and machine learning (ML) methods, we have performed the optimisation of III–V high-k TFETs with surrounding gate (III–V high-k TFETs [SG]) by efficiently handling the competing targets. Two advanced MOO algorithms—Non-Dominated Sorting (NS) Genetic Algorithm-III (GA-III) and Pareto Active-Learning Algorithm (PA-L)—are examined. Moreover, it has been demonstrated that ML-based MOO can automatically identify the best solutions for III–V high-k TFETs with Surrounding Gate, influencing the development of the next generation of nanoscale transistors.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144367244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of ITC Impact on Negative Bias HJVTFET for Implementing Universal Logic Gates","authors":"Vikas Ambekar,&nbsp;A. Theja,&nbsp;Meena Panchore,&nbsp;Chithraja Rajan,&nbsp;Bhumika Neole","doi":"10.1002/jnm.70057","DOIUrl":"https://doi.org/10.1002/jnm.70057","url":null,"abstract":"<div>\u0000 \u0000 <p>The objective of this study is to examine how interface trap charges (ITC) influence the logic performance of a <i>p</i>-type heterojunction vertical TFET structure without and with gate overlap (HJVTFET-WOG and HJVTFET-WG). The logic gates can be realized with the help of the HJ-VTFET that uses germanium as the source material. Using HJVTFET-WOG and HJVTFET-WG structures, our simulations have proven that two-input universal logic functions like NAND and NOR gates may be realized. By adjusting the gate-source overlap region and choosing the right silicon body thickness, the suggested vertical TFET is able to perform logic operations. For verifying the universal gate functionality, the HJVTFET drain current characteristic and energy band diagram are analyzed by considering the effect of trapped charges. The tunneling width of logic functions is narrower when the ITC is positive and wider when it is negative, and the effective sub-threshold slopes (SS) have been examined. It has been discovered that positive ITCs can enhance device capabilities, while negative ITCs lead to diminishing functionality. The suggested HJVTFET-WOG structure is a promising structure for implementing the logic gates for digital application under the influence of interface trap charges because its electrical performance is less vulnerable to ITC than HJVTFET-WG.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Physics Informed Neural Network Method for Solving Delay Hilfer Fractional Differential Equations","authors":"Parisa Rahimkhani,&nbsp;Sedigheh Sabermahani,&nbsp;Hossein Hassani","doi":"10.1002/jnm.70070","DOIUrl":"https://doi.org/10.1002/jnm.70070","url":null,"abstract":"<div>\u0000 \u0000 <p>In this research, a machine learning method based on physics informed neural network and fractional-order Genocchi wavelets (FGWs) as activation function is explored to solve delay Hilfer fractional differential equations (DHFDEs). In this machine learning algorithm, the FGWs and <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>sinh</mi>\u0000 </mrow>\u0000 <annotation>$$ sinh $$</annotation>\u0000 </semantics></math> functions are used as kernel functions to approximate the solution of DHFDEs. In fact, the solution of DHFDEs is approximated as a combination of the mentioned kernel functions and a set of weights that are learned during the fitting process. We apply the roots of the Legendre functions as training data to develop the algorithm. Then, the training is proposed using the optimizer algorithm. In addition, the error bound of the presented strategy is discussed. Finally, to illustrate the validity and feasibility of our results, three numerical simulation along with several tables and figures are utilized.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Impact of Temperature Variations on the Electrical Performance of SOI FinFET Devices","authors":"Haifa Bahri,&nbsp;Rached Ben Mehrez,&nbsp;Faouzi Nasri,&nbsp;Lilia El Amraoui,&nbsp;Nejeh Jaba","doi":"10.1002/jnm.70069","DOIUrl":"https://doi.org/10.1002/jnm.70069","url":null,"abstract":"<div>\u0000 \u0000 <p>The temperature-dependent self-heating effect (SHE) is critical for both accurate modeling and selecting optimal operating conditions, as elevated temperatures can compromise device reliability. These days, technology trends toward the miniaturization of electronic devices. As a result, device size decreases, and the packing density of a circuit at the integrated level increases. The combination of these two trends leads to an increase in power density and circuit temperature. For these reasons, our work aims to develop an electrothermal simulation of 20-nm SOI-FinFET. To rigorously analyze electrical behavior, we developed a mathematical framework integrating the ballistic-diffusive equation (BDE). The proposed model is validated by comparing simulated IDS-VGS characteristics with experimental data, demonstrating strong agreement. The SHE is related to thermal design, which is considered a basic procedure in modern microelectronics technology, measuring devices, and a series of modeling simulations and computer analysis of devices. “OFF” is not totally “OFF,” we have demonstrated the evolution of OFF-current (I_off) with device temperature and the impact of temperature in 20-nm SOI-FinFET on the subthreshold swing (SS) with both V_GS = 0.8 V and V_DS = 0.8 V.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Hybrid Electromagnetic Algorithm for Reconstructing 2-D Dielectric Objects Based on the M-Net","authors":"Ming Jin,&nbsp;Chun Xia Yang,&nbsp;Mei Song Tong","doi":"10.1002/jnm.70071","DOIUrl":"https://doi.org/10.1002/jnm.70071","url":null,"abstract":"&lt;div&gt;\u0000 \u0000 &lt;p&gt;The electromagnetic inverse scattering problem is highly nonlinear and ill-posed, often requiring iterative optimization with regularization terms. In this paper, we propose an enhanced U-Net called M-Net that combines multi-feature input and weighted output layers with an improved loss function calculation method to improve network performance. Given the intimate connection between inverse scattering and forward scattering, this paper devotes some space to demonstrate the effectiveness of neural networks in solving electromagnetic forward problems. The lack of rigorous theoretical derivation poses challenges in ensuring the reliability of neural network output results, thereby limiting its application in electromagnetic problems. In this paper, instead of the scattered field, we utilize diffraction tomography (DT) images that contain information about both imaging models and scattering mechanisms as the input data for the neural network. This approach provides richer a priori knowledge for the neural network and reduces learning difficulty. Numerical simulations of two-dimensional circular scatterers demonstrate that the hybrid M-Net-based electromagnetic inversion algorithm can effectively reconstruct the position, profile, and relative permittivity distribution of scatterers. Comparative experiments reveal significant improvements: the hybrid M-Net achieves an average reconstruction error of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;1.17&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;msup&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 1.17times {10}^{-4} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;%, outperforming the standard U-Net (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;8.39&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;msup&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 8.39times {10}^{-4} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;%), standard M-Net (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;4.07&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;msup&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 4.07times {10}^{-4} $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;%), and hybrid U-Net (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;1.69&lt;/mn&gt;\u0000 ","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing VLSI Design Efficiency With ML-Based C-ANN: Performance Optimization of Gate-Stacked Ferroelectric FE-MOSFETs for High-Speed and RF Applications","authors":"Abhay Pratap Singh,&nbsp;Vibhuti Chauhan,&nbsp;R. K. Baghel,&nbsp;Sukeshni Tirkey","doi":"10.1002/jnm.70064","DOIUrl":"https://doi.org/10.1002/jnm.70064","url":null,"abstract":"<div>\u0000 \u0000 <p>This study presents an innovative approach leveraging TCAD simulations and a Convolutional Artificial Neural Network (C-ANN) to address challenges in VLSI design. A statistical sample of 4000 distinct values was simulated to predict drain current (<i>I</i>_ds), achieving a dramatic reduction in runtime from 46 to 48 days (conventional TCAD) to just 100–120 s using the proposed ML-based C-ANN. The proposed gate-stacking SiO₂ + HfO₂ FE-MOSFET device demonstrates significant advancements, including reductions in short-channel effects (SCEs), subthreshold swing (SS) by 3.12%–4.04%, and drain-induced barrier lowering (DIBL) by 10.19%. Enhanced performance metrics include 52.95% higher I_ON, 90% reduced gate leakage, and improved transconductance <i>g</i>_m, transconductance generation function (TGF), early voltage (<i>V</i>_EA), and intrinsic gain (<i>A</i>_v) by 26.18%, 27.12%, 29.35%, and 101.24%, respectively. RF parameters such as gate capacitance (<i>C</i>_gg), unity gain frequency (<i>f</i>_t), and gain frequency product (GFP) improved by 34.53%, 48.74%, and 21.18%, making this device ideal for high-speed switching and RF applications, promoting efficiency in low-power VLSI designs.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bright and Dark Optical Soliton Solutions for a Nonlinear Schrödinger Equation With Kerr Law Nonlinearity and Weak Nonlocality","authors":"Abdul-Majid Wazwaz","doi":"10.1002/jnm.70063","DOIUrl":"https://doi.org/10.1002/jnm.70063","url":null,"abstract":"<div>\u0000 \u0000 <p>In this paper, we investigate a nonlinear Schrödinger equation that includes a combination of Kerr law nonlinearity and weak nonlocality. The model includes linear and nonlinear dispersion and has several applications in nonlinear optics and optical fibers. We retrieve bright, dark, and singular soliton solutions for this system. We implement a variety of powerful schemes to derive this variety of optical soliton solutions. Moreover, we derive more solutions of distinct structures that include periodic and exponential solutions.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Novel Method of Accurate Calculation of the Magnetic Dipole Field in Both the Near and Far Fields","authors":"Jiaqi Liu,&nbsp;Guoqiang Wang,&nbsp;Chaobo Liu,&nbsp;Qiancheng Zhang,&nbsp;Lifei Meng,&nbsp;Zhong Yi,&nbsp;Qi Xiao,&nbsp;Tielong Zhang","doi":"10.1002/jnm.70068","DOIUrl":"https://doi.org/10.1002/jnm.70068","url":null,"abstract":"<div>\u0000 \u0000 <p>The magnetic dipole serves as a fundamental concept in understanding electromagnetic phenomena. It has extensive applications across various fields such as geophysics and indoor navigation, which require accurate determination of its magnetic field. Although the magnetic dipole approximation yields satisfactory results in the far field, its computational accuracy is poor in the near-field region. Here, we propose a method of accurately calculating the magnetic dipole field in both the near and far fields. This method encompasses three steps: first, calculating the magnetic field strength <i>B</i>_<i>T</i> at the position <b>r</b>; second, determining the direction of the magnetic field at <b>r</b>; and third, calculating three components of the magnetic field. Numerical tests show that the calculation error of <i>B</i>_<i>T</i> is &lt; 1% at <i>r</i> &gt; 1.2 <i>R</i>, and is &lt; 0.1% at <i>r</i> &gt; 10 <i>R</i>, where <i>R</i> is the radius of the magnetic dipole. Additionally, the magnetic field direction can be precisely modeled via multi-parameter fitting, yielding angular errors &lt; 0.1° in most regions at <i>r</i> &gt; 1.2 <i>R</i>. Integration of the direction and <i>B</i>_<i>T</i> enables us to accurately calculate three components of the magnetic field with an error of &lt; 1% at <i>r</i> &gt; 1.8 <i>R</i>. These results indicate that our method is able to achieve high accurate calculation of the magnetic dipole field in both the near and far fields. This method can provide an effective computational algorithm for the applications relying on magnetic dipoles.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Pixel Antenna Design and Optimization Through Dynamic Updating of Initial Structure","authors":"Fan Jiang,&nbsp;Huiyao Tan,&nbsp;Lulu Chen,&nbsp;Liang Hua Ye,&nbsp;Jian-Feng Li,&nbsp;Duo-Long Wu","doi":"10.1002/jnm.70067","DOIUrl":"https://doi.org/10.1002/jnm.70067","url":null,"abstract":"<div>\u0000 \u0000 <p>Dynamic updating technique for initial structure in pixel antenna design and optimization is proposed. The conventional approach to pixel antenna design employs a fixed initial pixel structure set at the start of the entire process, while rarely studying the setting of the initial structure; therefore, the performance potential is not fully exploited. The proposed approach adaptively updates the initial structure to enhance the performance of the pixel antenna design, aiming to find the optimal initial pixel structure that achieves miniaturization and broadband capabilities. In general, the design procedure starts with an initial structure with relatively big element size and small overall size, then gradually reduces the element size and expands the overall size of the pixel area. A two-port pixel antenna is used as a design example to validate the proposed updating technique. The goal was to design a dual-port pixel antenna operating in the band of 2.4–3.2 GHz, using a miniaturized size. After two rounds of updates, the obtained −10 dB impedance bandwidths increased from 0.44 GHz (2.47–2.91GHz) to 0.75 GHz (2.45–3.20 GHz) and to 1.07 GHz (2.35–3.42 GHz), while having isolation better than −15 dB. The statistical results of 10 optimization runs for 3 initial structures also showed the performance enhancement of each updated initial structure. The proposed updated technology can be applied to other types of pixel antenna designs, with different design specifications.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144244477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}