基于低复杂度Volterra系列模型的新一代无线系统宽带功率放大器数字预失真器实现

IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haithem Rezgui, Ghalid Abib, Fatma Rouissi, Adel Ghazel
{"title":"基于低复杂度Volterra系列模型的新一代无线系统宽带功率放大器数字预失真器实现","authors":"Haithem Rezgui,&nbsp;Ghalid Abib,&nbsp;Fatma Rouissi,&nbsp;Adel Ghazel","doi":"10.1002/jnm.70113","DOIUrl":null,"url":null,"abstract":"<p>In this article, we provide a novel, expanded, and adapted pruning approach for the Simplified Volterra Series (SVS) model that makes it applicable to a wider range of Power Amplifiers (PAs). The proposed Modified SVS (MSVS) model is then applied in a Digital Predistortion (DPD) architecture to linearize a 25 W Gallium Nitride (GaN) RF PA. A comprehensive and detailed experimental hardware setup is designed for the in-depth testing and validation of the proposed model based DPD architecture, covering PA characterization, model coefficients extraction, and linearization. Our proposed MSVS based DPD significantly reduces the computational cost by at least 60% compared to widely referenced models in the literature while maintaining an optimal balance between accuracy and complexity. Experimental results performed using Long Term Evolution (LTE) signals show a modeling accuracy of −37 dB in terms of Normalized Mean Square Error (NMSE) and a 14 dB reduction in out-of-band distortion in terms of Adjacent Channel Power Ratio (ACPR), compared to the no DPD configuration.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70113","citationCount":"0","resultStr":"{\"title\":\"Digital Predistorter Implementation for Wideband Power Amplifiers in New Generation Wireless Systems Based on a Low-Complexity Volterra Series Model\",\"authors\":\"Haithem Rezgui,&nbsp;Ghalid Abib,&nbsp;Fatma Rouissi,&nbsp;Adel Ghazel\",\"doi\":\"10.1002/jnm.70113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this article, we provide a novel, expanded, and adapted pruning approach for the Simplified Volterra Series (SVS) model that makes it applicable to a wider range of Power Amplifiers (PAs). The proposed Modified SVS (MSVS) model is then applied in a Digital Predistortion (DPD) architecture to linearize a 25 W Gallium Nitride (GaN) RF PA. A comprehensive and detailed experimental hardware setup is designed for the in-depth testing and validation of the proposed model based DPD architecture, covering PA characterization, model coefficients extraction, and linearization. Our proposed MSVS based DPD significantly reduces the computational cost by at least 60% compared to widely referenced models in the literature while maintaining an optimal balance between accuracy and complexity. Experimental results performed using Long Term Evolution (LTE) signals show a modeling accuracy of −37 dB in terms of Normalized Mean Square Error (NMSE) and a 14 dB reduction in out-of-band distortion in terms of Adjacent Channel Power Ratio (ACPR), compared to the no DPD configuration.</p>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"38 5\",\"pages\":\"\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2025-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70113\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70113\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70113","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

在本文中,我们为简化Volterra系列(SVS)模型提供了一种新颖、扩展和自适应的修剪方法,使其适用于更广泛的功率放大器(pa)。然后将提出的改进SVS (MSVS)模型应用于数字预失真(DPD)架构中,对25 W氮化镓(GaN)射频放大器进行线性化。为了深入测试和验证所提出的基于DPD架构的模型,设计了一个全面而详细的实验硬件设置,包括PA表征,模型系数提取和线性化。与文献中广泛引用的模型相比,我们提出的基于MSVS的DPD显着降低了至少60%的计算成本,同时保持了准确性和复杂性之间的最佳平衡。使用长期演进(LTE)信号进行的实验结果表明,与没有DPD配置相比,就归一化均方误差(NMSE)而言,建模精度为−37 dB,就相邻信道功率比(ACPR)而言,带外失真降低了14 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Digital Predistorter Implementation for Wideband Power Amplifiers in New Generation Wireless Systems Based on a Low-Complexity Volterra Series Model

Digital Predistorter Implementation for Wideband Power Amplifiers in New Generation Wireless Systems Based on a Low-Complexity Volterra Series Model

In this article, we provide a novel, expanded, and adapted pruning approach for the Simplified Volterra Series (SVS) model that makes it applicable to a wider range of Power Amplifiers (PAs). The proposed Modified SVS (MSVS) model is then applied in a Digital Predistortion (DPD) architecture to linearize a 25 W Gallium Nitride (GaN) RF PA. A comprehensive and detailed experimental hardware setup is designed for the in-depth testing and validation of the proposed model based DPD architecture, covering PA characterization, model coefficients extraction, and linearization. Our proposed MSVS based DPD significantly reduces the computational cost by at least 60% compared to widely referenced models in the literature while maintaining an optimal balance between accuracy and complexity. Experimental results performed using Long Term Evolution (LTE) signals show a modeling accuracy of −37 dB in terms of Normalized Mean Square Error (NMSE) and a 14 dB reduction in out-of-band distortion in terms of Adjacent Channel Power Ratio (ACPR), compared to the no DPD configuration.

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来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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