International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Advanced tree-seed optimization based fractional-order PID controller design for simplified decoupled industrial tank systems","authors":"Achu Govind Kottayathu Rajagopalan,&nbsp;Subhasish Mahapatra,&nbsp;Soumya Ranjan Mahapatro","doi":"10.1002/jnm.3228","DOIUrl":"https://doi.org/10.1002/jnm.3228","url":null,"abstract":"<p>Controlling coupled tank systems is challenging due to interactions between tanks, nonlinear dynamics, time delays, uncertainties, and cross-coupling effects. The design of effective control strategies to address these complexities while ensuring stability and robust performance is difficult. Hence, this study focuses on presenting an innovative approach to enhance level control in coupled tank systems by employing a fractional-order proportional-integral-derivative (FOPID) controller. The FOPID controller is designed by imposing constraints on the performance metric and closed-loop gain. Besides, the defined optimization problem is solved by employing a tree seed algorithm. Further, the stability is analyzed graphically using the singular value analysis. The inherent complexities of coupled tank systems are effectively addressed by designing decouplers. The unique characteristics of the tree seed algorithm to navigate complex solution spaces and its effective handling of constraints offer a robust optimization framework. The validity and efficiency of the proposed method are analyzed in a range of simulation experiments conducted on distinct interconnected tank systems. Besides, the stability is verified graphically. The analysis highlights the effectiveness of the control law in handling uncertainties and disturbances. Besides, the proposed method reduces the settling time to around <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mn>20</mn>\u0000 <mo>%</mo>\u0000 </mrow>\u0000 <annotation>$$ 20% $$</annotation>\u0000 </semantics></math>. Through a systematic integration of optimization and comprehensive stability analysis, the study provides a holistic solution for optimizing level control in coupled tank systems.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140188508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An energy-efficient tunable threshold spiking neuron with excitatory and inhibitory function","authors":"Mudasir A. Khanday,&nbsp;Farooq A. Khanday","doi":"10.1002/jnm.3227","DOIUrl":"https://doi.org/10.1002/jnm.3227","url":null,"abstract":"<p>In this work, a complementary metal-oxide-semiconductor (CMOS) based leaky-integrate and fire neuron has been proposed and investigated for neuromorphic applications. The neuron has been designed in Cadence Virtuoso and validated experimentally. It has been observed that the neuron consumes a maximum energy of 68.87 fJ/spike. The response of the neuron to excitatory as well as inhibitory inputs has been studied. To verify the applicability, the proposed neuron has been explored for reconfigurable threshold logic to implement various linearly separable Boolean functions including OR, AND, NOT, NOR, and NAND. Moreover, the threshold tunability of the neuron has also been verified and this property has been exploited to design threshold-controlled logic gates. Instead of adjusting the weights of the applied inputs, the functionality of such gates can be controlled by changing the threshold of the neuron, simplifying the synaptic architecture of a neural network. Finally, a multilayer network has been designed and the recognition ability of the proposed network for MNIST handwritten digits has been verified with an accuracy of 96.93%.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140135433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of BTI-induced deterioration in vacuum based undoped structure","authors":"Rakesh Kumar,&nbsp;Meena Panchore","doi":"10.1002/jnm.3223","DOIUrl":"https://doi.org/10.1002/jnm.3223","url":null,"abstract":"<p>In this paper, an assessment of bias temperature instability (BTI) in <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mtext>high</mtext>\u0000 <mo>−</mo>\u0000 <mi>κ</mi>\u0000 <mo>/</mo>\u0000 <mtext>vacuum</mtext>\u0000 </mrow>\u0000 <annotation>$$ mathsf{high}-kappa /mathsf{vacuum} $$</annotation>\u0000 </semantics></math> based dual gate dopingless JLFET (HKV-DLJLFET) is carried out at 15 nm technology node. For this, the gate dielectric of HKV-DGDLJLFET is made of asymmetric combination of <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mtext>high</mtext>\u0000 <mo>−</mo>\u0000 <mi>κ</mi>\u0000 </mrow>\u0000 <annotation>$$ mathsf{high}-kappa $$</annotation>\u0000 </semantics></math> <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>hfO</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({hfO}_2right) $$</annotation>\u0000 </semantics></math> and vacuum dielectrics near the source/drain (S/D) side, which significantly minimizes the leakage current and enhances the reliability. Our simulation study have shown that the n-type HKV-DGDLJLFET exhibits 2.28 and 2.45 times less deterioration in drain current <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>I</mi>\u0000 <mi>D</mi>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({I}_Dright) $$</annotation>\u0000 </semantics></math> and transconductance <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>g</mi>\u0000 <mi>m</mi>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({g}_mright) $$</annotation>\u0000 </semantics></math> respectively, than n-type HKV-DGJLFET due to positive BTI (PBTI) for 2000 seconds at <math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mn>150</mn>\u0000 <mi>o</mi>\u0000 </msup>\u0000 <mi>C</mi>\u0000 </mrow>\u0000 <annotation>$$ {150}^{mathrm{o}}mathrm{C} $$</annotation>\u0000 </semantics></math>. Further, we have found that n-type HKV-DGDLJLFET has less deterioration in <math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>V</mi>\u0000 <mi>th</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {V}_{th} $$</annotation>\u0000 </semantics></math> and <math>\u0000","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140066503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A multi-objective optimization approach for beam pattern synthesis of UAV virtual rectangular antenna array","authors":"Fang Mei,&nbsp;Xinrong Guo,&nbsp;Hui Kang,&nbsp;Geng Sun,&nbsp;Tingting Zheng,&nbsp;Jianbo Wen","doi":"10.1002/jnm.3222","DOIUrl":"https://doi.org/10.1002/jnm.3222","url":null,"abstract":"<p>Virtual antenna array (VAA) formed by unmanned aerial vehicle (UAV) antenna units using collaborative beamforming (CB) technology plays an important role in the air communication system, and can be used in radar, military, disaster rescue and other places. However, there are still some issues with the beam pattern formed by this method, such as high sidelobe level (SLL), high cost and low efficiency. In this article, each UAV carries an omnidirectional antenna unit, and a large number of UAVs form a UAV virtual rectangular antenna array (UVRAA) to communicate with the ground base station (BS). We formulate an overhead minimization and efficient communication multi-objective optimization problem (OMECMOP) which jointly optimize the excitation current weights of the UVRAA and reduce the number of UAVs in operation to improve the beam pattern, enhance the communication efficiency and decrease the overhead of UVRAA. In addition, we also propose an improved multi-objective multi-verse optimization algorithm based on the inverse <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>S</mi>\u0000 </mrow>\u0000 <annotation>$$ S $$</annotation>\u0000 </semantics></math> decline curve type (ISDT-MOMVO) which introduces a strategy optimization initialization solution with quasi-opposition based learning (QBL) and a hybrid solution updating operators to solve the OMECMOP. The simulation results show that compared with other traditional swarm intelligence (SI) optimization algorithms the ISDT-MOMVO algorithm produces better beam pattern and the thinning rate can reach 50%.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140066504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel optimized fractional order system for tuning biological parameters","authors":"Tapaswini Sahu,&nbsp;Madhab Chandra Tripathy,&nbsp;Ranjan Kumar Jena","doi":"10.1002/jnm.3224","DOIUrl":"https://doi.org/10.1002/jnm.3224","url":null,"abstract":"<p>In contemporary biological research and applications, control systems have become indispensable for understanding and managing the intricate dynamics of the human biological system. Given the critical role of components such as the pancreas structure, protein formation, insulin and glucose regulation, and the genetic regulatory network (GRN), any disturbances in these systems can lead to severe health issues. To overcome these issues, to introduced a novel hybrid controller called the fuzzy lion-based optimized fractional order system (FL-OFOS) for evaluating the performance of the system. This controller aims to efficiently govern and regulate key components of the human biological system, including insulin dynamics, protein synthesis, pancreas functionality, and GRN management. The controller is specifically tailored to regulate insulin, protein synthesis, pancreas function, and GRN dynamics within the human biological system. The optimization of biological parameter values is achieved through the incorporation of the fuzzy lion function. The results of this study highlight the efficacy of the FL-OFOS controller in optimizing and regulating various biological parameters. The system demonstrates minimal error rates, rapid response times, reduced overshoot, and high control precision and accuracy. The proposed controller achieves a minimal error rate of 0.98%, with only minor overshoot occurring in the outcomes. As a result, the FL-OFOS controller offers substantial gains and delivers optimal results in the realm of biological systems.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140053241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A multiphysics SET modeling method based on machine learning","authors":"Ting Xu,&nbsp;Yanping Guo,&nbsp;Jiaxin Chen,&nbsp;Jianhui Bu,&nbsp;Libo Gao,&nbsp;Tao Ni,&nbsp;Bo Li","doi":"10.1002/jnm.3221","DOIUrl":"https://doi.org/10.1002/jnm.3221","url":null,"abstract":"<p>With continuous downscaling of transistor sizes, the sensitivity to single event effect (SET) has become one of the most important reliability issues for aerospace integrated circuits. Besides the SET, integrated circuits will be affected by multiphysics such as temperature and voltage when working in space. Currently, the commonly used modeling methods are based on physical mechanisms and the double exponential pulse current. However, both methods are hard to build an accurate SET current model when various variables are considered. In this article, a novel machine learning modeling method of multiphysics SET is proposed, using intelligent algorithms to optimize the network also. With this method, we can obtain a reasonable and accurate multiphysics SET model based on neural network with single hidden layer, and there is no need to consider complex physical mechanisms. The model data is collected from TCAD simulation. Ant colony algorithm was used to optimize the initial values of the network. The RMS (root mean square error) of modeling result is less than 2%.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140000725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K","authors":"Antonio Cerdeira,&nbsp;Magali Estrada,&nbsp;Michelly de Souza,&nbsp;Marcelo A. Pavanello","doi":"10.1002/jnm.3219","DOIUrl":"https://doi.org/10.1002/jnm.3219","url":null,"abstract":"<p>This work presents an analytical model for the drain and gate currents of silicon nanowire and nanosheet MOS transistors valid in all operating regions in the temperature range from 300 to 500 K. Analytical models for the tunneling components as well as for the reversely biased drain-to-channel PN junction are presented. Also, the models accounting for the necessary modifications in the silicon physical quantities for high-temperature operation, such as the maximum carrier mobility, the bandgap, and the intrinsic carrier concentration, are presented. The proposed model uses a single set of parameters, extracted at room temperature, to describe the high-temperature operation of silicon nanowire MOSFETs. The model is validated with comparisons between modeled and experimental results for devices with different fin widths and operating temperatures, with good agreement.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139937441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L-BTBT induced GIDL","authors":"Anchal Thakur,&nbsp;Rohit Dhiman,&nbsp;Girish Wadhwa,&nbsp;Sheetal Bhandari","doi":"10.1002/jnm.3217","DOIUrl":"https://doi.org/10.1002/jnm.3217","url":null,"abstract":"<p>In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band tunneling in lateral direction (L-BTBT) which induced GIDL current. It is analyzed that increase in the nanotube thickness and physical oxide thickness increase the GIDL current, while increasing the gate electrode work function, core gate and outer gate thicknesses gives reduced GIDL current. The SiGe <b>S</b>/D NTJLFET produce a remarkable high <i>I</i>_ON/<i>I</i>_OFF ratio ~ 10¹¹. A compact model for GIDL current is also developed which shows the dependency of structure parameters on leakage current. The SiGe has been incorporated as source and drain in NTJLFET which creates the energy band discontinuity. Furthermore, SiGe S/D NTJLFET is fairly compared with the conventional NT JLFET and nanowire (NW) JLFET and shows an improved performance.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139750103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Triple band frequency selective surface design for 5G mm-wave communication with artificial neural networks","authors":"Ufuk Şahin,&nbsp;Elif Seher Serinken,&nbsp;Revna Acar Vural,&nbsp;Nurhan Türker Tokan","doi":"10.1002/jnm.3218","DOIUrl":"https://doi.org/10.1002/jnm.3218","url":null,"abstract":"<p>High-performance frequency selective surfaces (FSSs) have gained attention for their spatial filtering characteristics in 5G communication systems. In this work, we propose an efficient and accurate design methodology for the FSS. Three different artificial neural network methods (ANN) are employed, and their performances are compared for analysis and synthesis purposes. Results show that GRNN has the highest performance for both training and test phase of ANN based FSS analysis and synthesis. A novel, compact, low-profile triple band FSS unit cell is introduced, and the working mechanism is described. By applying ANN based design procedure, the unit cell dimensions to resonate at the 5G mm-wave frequency band is extracted. A unit cell with the extracted physical dimensions is simulated with a full-wave analysis tool. The simulation results show that the FSS has the filtering feature at the predetermined mm-wave frequencies of the 5G communication. The prototype of the FSS is fabricated, as well. The simulations are verified experimentally with measurement results. The results show that proposed ANN based analysis and synthesis method can be an effective tool for the design of FSS band-pass filter for 5G applications.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139739165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid technique of conformal mapping and Chebyshev collocation method for solving time–space fractional order wave equation","authors":"Adel Abd Elaziz El-Sayed,&nbsp;Salah Boulaaras","doi":"10.1002/jnm.3220","DOIUrl":"https://doi.org/10.1002/jnm.3220","url":null,"abstract":"<p>This work presents a numerical approach for solving the time–space fractional-order wave equation. The time-fractional derivative is described in the conformal sense, whereas the space-fractional derivative is given in the Caputo sense. The investigated technique is based on the third-kind of shifted Chebyshev polynomials. The main problem is converted into a system of ordinary differential equations using conformal mapping, Caputo derivatives, and the properties of the third-kind shifted Chebyshev polynomials. Then, the Chebyshev collocation method and the non-standard finite difference method will be used to convert this system into a system of algebraic equations. Finally, this system can be solved numerically via Newton's iteration method. In the end, physics numerical examples and comparison results are provided to confirm the accuracy, applicability, and efficiency of the suggested approach.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139739166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}