International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献_第10页

Open-set recognition of LPI radar signals based on a slightly convolutional neural network and support vector data description 基于略卷积神经网络和支持向量数据描述的 LPI 雷达信号开放集识别

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-22 DOI: 10.1002/jnm.3213

Zhilin Liu, Tianzhang He, Tong Wu, Jindong Wang, Bin Xia, Liangjian Jiang

{"title":"Open-set recognition of LPI radar signals based on a slightly convolutional neural network and support vector data description","authors":"Zhilin Liu, Tianzhang He, Tong Wu, Jindong Wang, Bin Xia, Liangjian Jiang","doi":"10.1002/jnm.3213","DOIUrl":"10.1002/jnm.3213","url":null,"abstract":"LPI radar signal recognition based on convolutional neural networks usually assumes that the signal to be recognized belongs to a closed set of known signal classes. In an open electromagnetic signal environment, this type of closed-set recognition method will experience a drastic drop in performance due to the encounter with unknown types of signals. We propose an SCNN-SVDD model based on a combination of a lightweight convolutional neural network and a support vector data description algorithm to achieve open-set recognition of LPI radar signals under unknown signal conditions. In this approach, Choi-William's time-frequency distribution is used to obtain two-dimensional time-frequency images of the signal to be identified, and convolutional neural networks are used to achieve high-precision classification of known signals and extract the corresponding feature vectors. Then, the feature vectors are used as input to the SVDD algorithm and a hypersphere is constructed to detect whether the signal to be identified belongs to a known class. Experimental results show that the proposed method can detect unknown signals while maintaining high recognition accuracy for known signals.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139516668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Additional findings on S-parameter bounds valid for unconditionally stable N-ports 对无条件稳定 N 端口有效的 S 参数边界的其他发现

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-21 DOI: 10.1002/jnm.3211

Sergio Colangeli, Antonio Serino, Walter Ciccognani, Patrick E. Longhi, Ernesto Limiti

{"title":"Additional findings on S-parameter bounds valid for unconditionally stable N-ports","authors":"Sergio Colangeli, Antonio Serino, Walter Ciccognani, Patrick E. Longhi, Ernesto Limiti","doi":"10.1002/jnm.3211","DOIUrl":"10.1002/jnm.3211","url":null,"abstract":"In a recent paper, it has been shown that, if an N-port network fulfills the condition of (geometrical) unconditional stability at a given frequency, then its scattering parameters will also necessarily satisfy N easily computable bounds, one per port. In order to complete that picture, this contribution investigates whether a tighter bound can be obtained by combining the <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>N</mi>\u0000 </mrow>\u0000 <annotation>$$ N $$</annotation>\u0000 </semantics></math> bounds into just one. The answer is in general negative, except that the 3-port case does indeed exhibit a peculiar behavior: this can be exploited to reduce the upper bound when the diagonal elements of the scattering matrix are limited in magnitude up to some <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>α</mi>\u0000 </mrow>\u0000 <annotation>$$ alpha $$</annotation>\u0000 </semantics></math>, and in particular for <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>α</mi>\u0000 <mo>=</mo>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <annotation>$$ alpha =0 $$</annotation>\u0000 </semantics></math> (simultaneous conjugate match).","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139516667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical modeling of recessed double gate junctionless field-effect-transistor in subthreshold region 亚阈值区凹陷双栅极无结场效应晶体管的分析建模

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-18 DOI: 10.1002/jnm.3209

Sandeep Kumar, Arun Kumar Chatterjee, Rishikesh Pandey

引用次数: 0

Design of low-voltage low-noise operational transconductance amplifiers for low frequency applications 为低频应用设计低压低噪声运算跨导放大器

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-15 DOI: 10.1002/jnm.3212

Kulbhushan Sharma, Ayush Kumar, Jaya Madan, Rahul Pandey

{"title":"Design of low-voltage low-noise operational transconductance amplifiers for low frequency applications","authors":"Kulbhushan Sharma, Ayush Kumar, Jaya Madan, Rahul Pandey","doi":"10.1002/jnm.3212","DOIUrl":"https://doi.org/10.1002/jnm.3212","url":null,"abstract":"Low-noise and low-voltage operation is prime requirement of an operational transconductance amplifier for low frequency applications. However, achieving low-noise operation at low supply voltages is a challenging task in CMOS technology owing to noise-power and noise-stability tradeoffs. This article outlines, the design of four differential bias self-cascode (DBSC) operational transconductance amplifiers (OTAs) working at ±0.7 V. The four design techniques namely gate driven (GD), bulk driven (BD), bulk driven quasi-floating gate (BDQFG), and gate driven quasi floating bulk (GDQFB) have been applied on DBSC OTAs. The designing aspects and performance parameters of these four OTAs such as gain, gain-bandwidth, input referred noise (IRN), settling time (ST), common mode rejection ratio (CMRR), total harmonic distortion, input impedance, transconductance, power consumption, area consumption and process/mismatch variations have been fairly compared in this work. These DBSC OTAs have been designed and simulated using a standard 0.18-μm 6M1P CMOS N-well process. The results infer GD DBSC OTA shows high CMRR of 125.83 dB. While the BD DBSC OTA consumes very low power of 0.2 μW. The BDQFG DBSC OTA shows low 1% ST of 24.83 μS. The GDQFB DBSC OTA show high transconductance (2.35 mS), high gain (64.97 dB), and low IRN (0.40 μV/√Hz at 10 Hz). The theoretical predictions for these OTAs agree with the post-layout simulations. The proposed OTAs can be used for designing various analog circuits such as programmable gain amplifiers, variable gain amplifiers, and transimpedance amplifiers for low-frequency biomedical and health care applications.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139474055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices GaN HEMT 器件上的铁电材料滞后效应导致的分数阶电容行为

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-15 DOI: 10.1002/jnm.3206

Dariskhem Pyngrope, Shubhankar Majumdar, Giovanni Crupi

{"title":"Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices","authors":"Dariskhem Pyngrope, Shubhankar Majumdar, Giovanni Crupi","doi":"10.1002/jnm.3206","DOIUrl":"https://doi.org/10.1002/jnm.3206","url":null,"abstract":"In recent years, gallium nitride (GaN) high electron mobility transistors (HEMTs) have come to the forefront of the semiconductor industry because of their exceptional performance in both high-power and high-frequency utility. Accurate capacitance modeling is crucial to optimize performance and facilitate energy-efficient electronic circuit design. In order to reflect the complex nature of the aluminum scandium nitride (AlScN) gate capacitance in GaN HEMTs this study investigates the use of the unique Grünwald-Letnikov model based on fractional order calculus. The proposed model presents a powerful approach to accurately characterize capacitance since fractional order derivatives allow modeling of non-integer order systems. Quantitative assessment of the Grünwald-Letnikov model's accuracy is performed through various error metrics, including mean absolute error (MAE), root mean square error (RMSE), maximum percentage error (MPE), mean absolute percentage error (MAPE), and mean squared error (MSE), by comparing the model's predictions to experimental data. Notably, this model demonstrates remarkable consistency in error metrics, with maximum values of MPE = 0.21%, MAE = 0.05%, MAPE = 0.33%, MSE = 0.01%, and RMSE = 0.09% for the forward scan, and MPE = 0.32%, MAE = 0.04%, MAPE = 0.39%, MSE = 0.01%, and RMSE = 0.08% for the backward scan. These metrics affirm the model's precision in capturing the nuanced capacitance characteristics of GaN HEMT devices. Hence, herein for the first time, the novel Grünwald-Letnikov model, augmented by fractional order calculus, proves to be a robust tool for accurately characterizing GaN HEMT capacitance. Its ability to seamlessly account for the complexities introduced by using ferroelectric material highlights its potential for advancing semiconductor design and optimizing device performance.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139474039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adaptation and comparative analysis of HSPICE level-61 and level-62 model for a-IGZO thin film transistors 针对 a-IGZO 薄膜晶体管的 HSPICE 61 级和 62 级模型的调整和比较分析

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-15 DOI: 10.1002/jnm.3210

Divya Dubey, Manish Goswami, Kavindra Kandpal

{"title":"Adaptation and comparative analysis of HSPICE level-61 and level-62 model for a-IGZO thin film transistors","authors":"Divya Dubey, Manish Goswami, Kavindra Kandpal","doi":"10.1002/jnm.3210","DOIUrl":"https://doi.org/10.1002/jnm.3210","url":null,"abstract":"This paper presents a Computer-aided design (CAD) model for a-IGZO thin film transistors (TFTs) by adapting SPICE level-61 RPI a-Si: H (Hydrogenated Amorphous Silicon) TFT model and level-62 RPI Poly-Si (Poly Silicon) TFT model. This work provides a complete understanding of SPICE level-61 and 62 model parameters, which must be tuned for a-IGZO TFT simulation. The adapted SPICE models of level-61 and level-62 could model all regions of operation of the TFT, that is, above-threshold and below-threshold regions. Adapted RPI poly-Si model also shows the kink effect in ZnO thin film transistors (TFTs) due to the recombination of electron–hole pairs in the channel via boundary trap states present in the poly-Si TFTs thereby increasing the drain current in the transistors above pinch-off region. The extracted performance parameters of the adapted models were found to be contiguous with experimental results. The maximum deviation in the subthreshold slope is approximately 5 mV/decade for level-61 a-Si TFT, and for level-62 poly-Si TFT, deviation in the subthreshold slope is even less, that is, 0.2 mV/decade. The experimental and simulated characteristics, extracted on-to-off ratio, negative bias reverse saturation current, and threshold voltage were almost similar. However, an average deviation of 2.4% and 2.27% was observed in the output characteristics of the adapted level-61 and level-62 models, respectively.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139474054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and simulation of a germanium source dual-metal dopingless tunnel FET as a label-free biosensor 设计和模拟作为无标记生物传感器的锗源双金属无掺杂隧道场效应晶体管

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-15 DOI: 10.1002/jnm.3208

Sidhartha Dash, Shwetapadma Panda

{"title":"Design and simulation of a germanium source dual-metal dopingless tunnel FET as a label-free biosensor","authors":"Sidhartha Dash, Shwetapadma Panda","doi":"10.1002/jnm.3208","DOIUrl":"https://doi.org/10.1002/jnm.3208","url":null,"abstract":"This study presents a new dual-metal dopingless tunnel field effect transistor with a Germanium source (GeS-DM-DLT) for label-free biomolecule detection. Introducing a Ge source and dual-metal gate provides improved drain current. We have considered an L-shaped cavity at the top and bottom source metal region for investigating the sensitivity. The biosensor's sensitivity has been measured using the neutral biomolecules' dielectric constants (varying the k-values in the cavity). The sensor's DC performance is investigated using transfer characteristics, BTBT rate, energy band, and electric field variation for different k-values. The sensitivity performance of the proposed biosensor is evaluated in terms of different DC parameters (drain current, surface potential, subthreshold swing, interband tunneling rate, electric field) and RF parameters (parasitic capacitance, transconductance, cut-off frequency, maximum frequency). The suggested biosensor offers a much-improved SON of 9.86 × 108 and SRATIO of 1.94 × 104 for a dielectric constant of 22.0 at room temperature. Further research has been done to study the effects of dielectric materials, interface trap carriers (ITC), and temperature on drain current, drain current sensitivity, and other sensitivity parameters. The article also includes investigating the influence of the fill factor on sensitivity performance. The GeS-DM-DLT sensor performs best in fully-filled conditions compared to the partially-filled condition inside the cavity region.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139473818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Automatic multi-objective particle swarm optimization method for effective Doherty power amplifier design 多目标粒子群自动优化法用于有效设计 Doherty 功率放大器

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-11 DOI: 10.1002/jnm.3204

Zefang Hao, Yan Qu, Jiajun Huang, Giovanni Crupi, Jialin Cai

引用次数: 0

Incorporating DC bias voltage in poly-harmonic distortion modeling for RF power GaN transistors 在射频功率氮化镓晶体管的多谐失真建模中加入直流偏置电压

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-11 DOI: 10.1002/jnm.3201

Shuhao Cheng, Xiaoqiang Tang, Zlatica Marinković, Giovanni Crupi, Jialin Cai

引用次数: 0

Data-driven model-free modified nodal analysis circuit solver 数据驱动的无模型修正节点分析电路求解器