International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献_第9页

A novel approach to detect glucose concentration using active cavity Whispering Gallery Mode sensor 利用有源腔 Whispering Gallery 模式传感器检测葡萄糖浓度的新方法

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-09 DOI: 10.1002/jnm.3267

El Metouy Et-Tijani, Luiz Poffo, Christelle Velly, Patrice Féron, Laetitia Abel-Tiberini

引用次数: 0

The sensitivity analysis using adjoint method in numerical modeling of electric potential distribution of the transmission lines 在输电线路电动势分布数值建模中使用邻接法进行敏感性分析

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-03 DOI: 10.1002/jnm.3265

André Luiz Paganotti, Rodney Resende Saldanha, Adriano Chaves Lisboa, Márcio Matias Afonso, Bell Abrão Marques Duane

{"title":"The sensitivity analysis using adjoint method in numerical modeling of electric potential distribution of the transmission lines","authors":"André Luiz Paganotti, Rodney Resende Saldanha, Adriano Chaves Lisboa, Márcio Matias Afonso, Bell Abrão Marques Duane","doi":"10.1002/jnm.3265","DOIUrl":"https://doi.org/10.1002/jnm.3265","url":null,"abstract":"This paper proposes a new methodology for sensitivity analysis evaluation, fast and with high precision of the electric potential distribution near the transmission lines (TL's). The TL is modeled by the finite element method and the sensitivity of the cable positions is obtained using the adjoint method. The sensitivity of the objective function during the optimization process by using methods based on gradient information is obtained by using the adjoint method. The exact sensitivity obtained by the adjoint method concerning the numeric model of the TL's results in new geometries of the bundles conductors with high surge impedance loading. These geometries are not possible to get using analytic models. The sensitivities of a large number of conductors by phase are obtained with high precision and very low computational cost using adjoint sensitivities, which are independent of the number of design variables. The central finite difference method is used to calculate the sensitivities and to validate the adjoint method. With this methodology, the FEM model of the TL can be used during the optimization process without compromising the required computational processing time.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141536881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transfer learning-based physics-informed neural networks for magnetostatic field simulation with domain variations 基于迁移学习的物理信息神经网络用于磁场变化的磁静电场模拟

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-03 DOI: 10.1002/jnm.3264

Jonathan Rainer Lippert, Moritz von Tresckow, Herbert De Gersem, Dimitrios Loukrezis

{"title":"Transfer learning-based physics-informed neural networks for magnetostatic field simulation with domain variations","authors":"Jonathan Rainer Lippert, Moritz von Tresckow, Herbert De Gersem, Dimitrios Loukrezis","doi":"10.1002/jnm.3264","DOIUrl":"https://doi.org/10.1002/jnm.3264","url":null,"abstract":"Physics-informed neural networks (PINNs) provide a new class of mesh-free methods for solving differential equations. However, due to their long training times, PINNs are currently not as competitive as established numerical methods. A promising approach to bridge this gap is transfer learning (TL), that is, reusing the weights and biases of readily trained neural network models to accelerate model training for new learning tasks. This work applies TL to improve the performance of PINNs in the context of magnetostatic field simulation, in particular to resolve boundary value problems with geometrical variations of the computational domain. The suggested TL workflow consists of three steps. (a) A numerical solution based on the finite element method (FEM). (b) A neural network that approximates the FEM solution using standard supervised learning. (c) A PINN initialized with the weights and biases of the pre-trained neural network and further trained using the deep Ritz method. The FEM solution and its neural network-based approximation refer to an computational domain of fixed geometry, while the PINN is trained for a geometrical variation of the domain. The TL workflow is first applied to Poisson's equation on different 2D domains and then to a 2D quadrupole magnet model. Comparisons against randomly initialized PINNs reveal that the performance of TL is ultimately dependent on the type of geometry variation considered, leading to significantly improved convergence rates and training times for some variations, but also to no improvement or even to performance deterioration in other cases.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3264","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141536882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high-speed and power efficient CMOS dynamic comparator for data converter circuits 用于数据转换器电路的高速、高能效 CMOS 动态比较器

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-26 DOI: 10.1002/jnm.3263

K. Brindha, J. Manjula

{"title":"A high-speed and power efficient CMOS dynamic comparator for data converter circuits","authors":"K. Brindha, J. Manjula","doi":"10.1002/jnm.3263","DOIUrl":"https://doi.org/10.1002/jnm.3263","url":null,"abstract":"Complementary metal oxide semiconductor (CMOS) comparators play a pivotal role in analog and mixed-signal circuits, finding diverse applications across electronic systems. In data converter circuits, the significance of high-speed, low-power comparators is pronounced. They ensure swift and precise signal comparisons, minimizing energy usage for dependable analog-to-digital and digital-to-analog conversions. This paper introduces an advanced CMOS dynamic comparator, optimized for data converter circuits using a 45 nm CMOS process. The comparator integrates two novel designs tailored for operation at 0.8 and 1 V power supplies, functioning at 1 GHz. One design incorporates a cascode differential amplifier in the pre-amplifier stage, enhancing speed and sensitivity by augmenting gain, linearity, and output swing. This approach achieves a delay of 73.53 ps and consumes 9.95 μW at a 1 V supply voltage. The second design employs a simple charge pump in the pre-amplifier stage, further elevating speed and sensitivity through amplified voltage levels and enhanced slew rate, resulting in a 57.24 ps delay and 9.03 μW power consumption at 1 V. Simulations underscore the proposed comparator's superiority over conventional counterparts, showcasing significant enhancements in speed and power efficiency, all while preserving precision and dependability.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141488845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A finite-difference-based technique for numerically efficient computation of capacitance matrices for 2-dimensional multi-conductor problems involving thin dielectric coating 基于有限差分的技术，用于高效计算涉及薄介质涂层的二维多导体问题的电容矩阵

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-26 DOI: 10.1002/jnm.3261

Kapil Sharma, Raj Mittra

引用次数: 0

Optimizing MMIC performance: The synergy of AI models and heterogeneous integration process 优化 MMIC 性能：人工智能模型与异质集成工艺的协同作用

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-17 DOI: 10.1002/jnm.3247

Jie Liu, Jiayu Chen, Yifan Wu, Guodong Su, Junchao Wang, Yuehang Xu, Jun Liu

{"title":"Optimizing MMIC performance: The synergy of AI models and heterogeneous integration process","authors":"Jie Liu, Jiayu Chen, Yifan Wu, Guodong Su, Junchao Wang, Yuehang Xu, Jun Liu","doi":"10.1002/jnm.3247","DOIUrl":"https://doi.org/10.1002/jnm.3247","url":null,"abstract":"This study presents a novel approach for optimizing the parameters of monolithic microwave integrated circuit (MMIC) functional units using machine-learning techniques and multi-objective optimization algorithms. We utilize advanced machine-learning methods, including random forest, artificial neural networks (ANNs), and recurrent neural networks (RNNs), to construct highly accurate models that predict the performance of these units. These models are subsequently integrated with a multi-objective optimization algorithm, specifically the multi-objective particle swarm optimization (MOPSO), to generate inverse design solutions for both the geometric designs of the units and the fabrication parameters of the heterogeneous integration process. Our approach, which has been validated through chip fabrication and testing, has demonstrated its robustness as a tool for achieving optimal MMIC designs. It not only reduces the design time but also enhances the manufacturability of MMICs, thereby opening new avenues in microwave and RF circuit design.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141424781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sensitivity, linearity, and noise evaluation of L-shaped dielectrically modulated label free tunnel field-effect transistor biosensor L 型介质调制无标记隧道场效应晶体管生物传感器的灵敏度、线性度和噪声评估

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-17 DOI: 10.1002/jnm.3262

Sruti Suvadarsini Singh, Prasanna Kumar Sahu

{"title":"Sensitivity, linearity, and noise evaluation of L-shaped dielectrically modulated label free tunnel field-effect transistor biosensor","authors":"Sruti Suvadarsini Singh, Prasanna Kumar Sahu","doi":"10.1002/jnm.3262","DOIUrl":"https://doi.org/10.1002/jnm.3262","url":null,"abstract":"This research article examines a L-shaped dielectrically modulated label free TFET (L-DM-TFET) biosensor for the purpose of detecting different biomolecules using a label-free biosensing detection technique. The proposed structure allows for the recognition of biomolecules by modulating various electrical properties, such as the drain current, transconductance, and linearity parameters. The source region of the proposed TFET incorporates a SiGe (source)/Si (channel) heterojunction, utilizing a low bandgap material of SiGe. This heterojunction is employed to enhance the ON-state current of the devices. The materials used and the fabrication steps involved in our proposed device are compatible with complementary metal-oxide-semiconductor (CMOS) technology. This analysis is conducted using a calibrated Silvaco technology computer-aided design (TCAD) simulator. Additionally, by considering a dielectric constant range of 1–12, we calculate various figure of merits (FOMs) parameters for the device. These include evaluation of linearity, sensitivity, and noise characteristics. Furthermore, we have conducted an analysis of linearity FOMs, such as VIP2, VIP3, IIP3, and IMD3 for the proposed device under study. Additionally, the linearity analysis of the presented tunneling FET (TFET) indicates the device's excellent performance in distortionless switching operations. Consequently, the L-shaped dielectrically modulated biosensor holds potential suitability for high-speed circuit designs.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141424780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and application of optimum toroidal shaped electromagnetic energy harvesters for unmanned aerial vehicles 无人机最佳环形电磁能量收集器的设计与应用

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-05 DOI: 10.1002/jnm.3260

M. Şamil Balcı, Adem Dalcalı

{"title":"Design and application of optimum toroidal shaped electromagnetic energy harvesters for unmanned aerial vehicles","authors":"M. Şamil Balcı, Adem Dalcalı","doi":"10.1002/jnm.3260","DOIUrl":"https://doi.org/10.1002/jnm.3260","url":null,"abstract":"This study presents the design and implementation of electromagnetic energy harvesters for the purpose of charging unmanned aerial vehicles (UAVs) battery. In the study, the designed harvesters are analyzed through finite element method (FEM) simulations. In the FEM analysis, common and self-inductance values, as well as magnetic flux density values of the harvesters, are calculated at specific current values. Inductance values are also theoretically calculated for comparison. Subsequently, an experimental setup is established to test the designed harvesters. After winding the core, the induced voltage and the power transferred to the load by the harvesters are measured. Curve fitting is performed after the measurements with different load resistances to find the maximum power transferred to the load. Through curve fitting, the maximum power obtained at each current value and at which load resistance this power is harvested are determined. Considering the intention of using the designed cores to charge UAVs and the importance of weight in UAV flight, the weights of each core, both without winding and after winding, are measured, and their costs are calculated. Taking all these criteria into account, the performance of the harvesters is demonstrated, and those among the used cores that are the most suitable for UAVs are identified in the study.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141264617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K 研究低至 10 mK 的长沟道体 MOSFET 阈值电压模型和 4 K 时的关键模拟参数

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-05 DOI: 10.1002/jnm.3258

Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen

{"title":"Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K","authors":"Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen","doi":"10.1002/jnm.3258","DOIUrl":"https://doi.org/10.1002/jnm.3258","url":null,"abstract":"Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (Vth) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (gm), subthreshold swing (SS), linear region current (Ilin) and gm/IDS related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 3","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141264616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hyper-parameter optimized GPR model based on chaos game algorithm for RF power transistors 基于混沌博弈算法的射频功率晶体管超参数优化 GPR 模型

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-03 DOI: 10.1002/jnm.3259

Zhiwei Gao, Tao Zhou, Giovanni Crupi, Jialin Cai

引用次数: 0