A High Power Density Ku-Band GaN Power Amplifier Based on Device-Level Thermal Analysis

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-11-14 DOI:10.1002/jnm.3311

Jiuding Zhou, Chupeng Yi, Wenliang Liu, Yang Lu, Xiaohua Ma, Yuanfu Zhao, Yue Hao

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引用次数: 0

Abstract

This paper introduces a new design method for a high-power density GaN MMIC amplifier operating in the Ku-band. A thermal model to investigate the thermal distribution of power amplifiers is proposed to achieve optimal performance in terms of power density, chip size, and channel temperature. The thermal distribution and channel temperature of a single device, an eight-way parallel device combination, and the entire PA layout are obtained by finite element simulation. The thermal coupling effects of high-power MMICs are analyzed in detail. The thermal resistances are extracted from the simulation to design a Ku-band amplifier. Measurement results demonstrate that the designed amplifier achieves 43.0–44.2 dBm output power and 22.7%–34.5% PAE at 28 V drain voltage with a 100 μs pulse width and 10% duty cycle within 12–18 GHz. The proposed design method enables the amplifier to have a compact layout of 10.88 mm² and a power density between 1.84 and 2.42 W/mm. This design method can offer valuable insights for future development of high-power MMIC amplifiers.

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基于器件级热分析的高功率密度 Ku 波段氮化镓功率放大器

本文介绍了一种在 Ku 波段工作的高功率密度 GaN MMIC 放大器的新设计方法。本文提出了一种用于研究功率放大器热分布的热模型，以实现功率密度、芯片尺寸和通道温度方面的最佳性能。通过有限元仿真获得了单个器件、八路并联器件组合以及整个功率放大器布局的热分布和通道温度。详细分析了大功率 MMIC 的热耦合效应。从仿真中提取热阻来设计 Ku 波段放大器。测量结果表明，在漏极电压为 28 V、脉宽为 100 μs、占空比为 10%、频率为 12-18 GHz 时，所设计的放大器可实现 43.0-44.2 dBm 的输出功率和 22.7%-34.5% 的 PAE。所提出的设计方法使放大器的布局紧凑，仅为 10.88 mm2，功率密度介于 1.84 和 2.42 W/mm 之间。这种设计方法可为未来开发大功率 MMIC 放大器提供宝贵的启示。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.