{"title":"利用 32 纳米 CNTFET 技术实现高速低功耗运行的静态近似修正镜像满加法器","authors":"Sagar Juneja, M. Elangovan, Kulbhushan Sharma","doi":"10.1002/jnm.3320","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>The error tolerance nature of the digital multimedia applications enables the implementation of approximate digital circuits to achieve the benefits of high speed of operation and low power consumption. This paper proposes a static approximate modified mirror full adder (SAMM-FA) circuit designed using logic level approximation to reduce the number of transistors in the circuit. Owing to the balanced electrical characteristics, better stability and higher on-current to off-current ratio (<i>I</i><sub>on</sub>/<i>I</i><sub>off</sub>), 32 nm carbon nanotube field effect transistor (CNTFET) technology has been used for implementing the proposed circuit in the Cadence Virtuoso tool. Featuring only 10 transistors and operating at a supply voltage of 0.5 V, the proposed SAMM-FA has a low power dissipation of just 4.14 nW, and propagation delay of just 3.82 ps. The power delay product and energy delay product figure of merits of the proposed circuit are found to be excellent when compared with the contemporary designs.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Static Approximate Modified Mirror—Full Adder for High Speed and Low Power Operations Using 32 nm CNTFET Technology\",\"authors\":\"Sagar Juneja, M. Elangovan, Kulbhushan Sharma\",\"doi\":\"10.1002/jnm.3320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>The error tolerance nature of the digital multimedia applications enables the implementation of approximate digital circuits to achieve the benefits of high speed of operation and low power consumption. This paper proposes a static approximate modified mirror full adder (SAMM-FA) circuit designed using logic level approximation to reduce the number of transistors in the circuit. Owing to the balanced electrical characteristics, better stability and higher on-current to off-current ratio (<i>I</i><sub>on</sub>/<i>I</i><sub>off</sub>), 32 nm carbon nanotube field effect transistor (CNTFET) technology has been used for implementing the proposed circuit in the Cadence Virtuoso tool. Featuring only 10 transistors and operating at a supply voltage of 0.5 V, the proposed SAMM-FA has a low power dissipation of just 4.14 nW, and propagation delay of just 3.82 ps. The power delay product and energy delay product figure of merits of the proposed circuit are found to be excellent when compared with the contemporary designs.</p>\\n </div>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"37 6\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3320\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3320","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Static Approximate Modified Mirror—Full Adder for High Speed and Low Power Operations Using 32 nm CNTFET Technology
The error tolerance nature of the digital multimedia applications enables the implementation of approximate digital circuits to achieve the benefits of high speed of operation and low power consumption. This paper proposes a static approximate modified mirror full adder (SAMM-FA) circuit designed using logic level approximation to reduce the number of transistors in the circuit. Owing to the balanced electrical characteristics, better stability and higher on-current to off-current ratio (Ion/Ioff), 32 nm carbon nanotube field effect transistor (CNTFET) technology has been used for implementing the proposed circuit in the Cadence Virtuoso tool. Featuring only 10 transistors and operating at a supply voltage of 0.5 V, the proposed SAMM-FA has a low power dissipation of just 4.14 nW, and propagation delay of just 3.82 ps. The power delay product and energy delay product figure of merits of the proposed circuit are found to be excellent when compared with the contemporary designs.
期刊介绍:
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.