International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献_第8页

Comprehensive characterization of a high-performance double heterojunction InGaAs pHEMT for linear power-efficient amplifiers applications 高性能双异质结 InGaAs pHEMT 的综合表征，用于线性高能效放大器应用

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-05 DOI: 10.1002/jnm.3277

Sadia Sultana, Jannatul Naima, Md. Shamsul Alam, Md. Shah Alam, Giovanni Crupi, Mohammad A. Alim

{"title":"Comprehensive characterization of a high-performance double heterojunction InGaAs pHEMT for linear power-efficient amplifiers applications","authors":"Sadia Sultana, Jannatul Naima, Md. Shamsul Alam, Md. Shah Alam, Giovanni Crupi, Mohammad A. Alim","doi":"10.1002/jnm.3277","DOIUrl":"10.1002/jnm.3277","url":null,"abstract":"This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on-wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher-order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141936970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Harmonic balance applied to a 2D nonlinear finite-element magnetic model with motion and circuit coupling 谐波平衡应用于具有运动和电路耦合的二维非线性有限元磁模型

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-29 DOI: 10.1002/jnm.3275

Elia Scolaro, Luigi Alberti, Ruth V. Sabariego, Johan Gyselinck

{"title":"Harmonic balance applied to a 2D nonlinear finite-element magnetic model with motion and circuit coupling","authors":"Elia Scolaro, Luigi Alberti, Ruth V. Sabariego, Johan Gyselinck","doi":"10.1002/jnm.3275","DOIUrl":"10.1002/jnm.3275","url":null,"abstract":"In this work, the harmonic balance approach is applied to a 2D nonlinear finite-element magnetic model with motion, coupled to a nonlinear circuit. The case study comprises a six-pole three-phase surface-mounted permanent magnet generator connected to a six-pulse full-wave diode bridge rectifier. Simulations are performed at fixed generator speed in two operating cases: with an open-circuit DC bus and supplying a load resistance. Both time stepping and harmonic balance approaches are deeply discussed focusing on the model under study, along with relevant implementation details. Harmonic balance results are compared with benchmark time stepping simulations in terms of voltage and current waveforms, progressively expanding the harmonic spectrum. The computational cost of the two approaches is reported as well. Simulation accuracy is satisfying with regard to time stepping benchmark results: relative errors on total harmonic distortion and global root-mean-square values are lower than 3% and 1%, respectively. However, the time stepping approach outperforms the harmonic balance one, due to the relatively short initial transient of the chosen case study. Further improvements on practical implementation are needed to exploit the potentialities of harmonic balance technique.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141864858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket 带源袋和不带源袋铁电垂直隧道场效应晶体管的模拟和线性性能分析

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-29 DOI: 10.1002/jnm.3274

Ashish Kumar Singh, Ramesh Kumar, Heranmoy Maity, Prabhat Singh, Sarabdeep Singh

{"title":"Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket","authors":"Ashish Kumar Singh, Ramesh Kumar, Heranmoy Maity, Prabhat Singh, Sarabdeep Singh","doi":"10.1002/jnm.3274","DOIUrl":"10.1002/jnm.3274","url":null,"abstract":"This study examines the electrical performance characteristics of a ferroelectric vertical tunnel field-effect transistor (TFET) with and without a source pocket (Si0.5Ge0.5). The incorporation of Germanium in the source of the TFET aims to enhance the on-current. The Silvaco TCAD simulation tool is utilized to simulate the proposed structure. To improve device performance, a ferroelectric layer with a vertical length is employed in the gate of the TFET. When the ferroelectric layer partially controls the channel region, device characteristics, such as on-current and subthreshold swing (SS) can be improved (i.e., ION = 15.21 × 10−5 A/μm, ION/IOFF = 5.03 × 109, and a minimum SS of 20.87 mV/decade at 300 K). This article studied a comparison between ferroelectric vertical TFETs and nonferroelectric vertical TFETs, as well as ferroelectric vertical TFETs with and without source pockets. The comparison is done on the basis of DC and RF parameters. Analysis of this comparison represents that ferroelectric vertical TFET with source pocket has improved characteristics.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141865037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computational modeling of uniaxial antiferroelectric and antiferroelectric-like actuators 单轴反铁电和类反铁电致动器的计算建模

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-26 DOI: 10.1002/jnm.3273

Binh H. Nguyen, Véronique Rochus

{"title":"Computational modeling of uniaxial antiferroelectric and antiferroelectric-like actuators","authors":"Binh H. Nguyen, Véronique Rochus","doi":"10.1002/jnm.3273","DOIUrl":"10.1002/jnm.3273","url":null,"abstract":"Recently, antiferroelectric and antiferroelectric-like materials have regained interest in electronic devices, such as field-effect transistors, memory, and transducers. Particularly in micro/nano-electromechanical coupling systems such as actuators, these innovative materials, with their peculiar phase transition between antiferroelectric and ferroelectric phases, show promise in offering large electro-strain, fast response, and low power consumption devices. However, compared to numerous computational models of ferroelectric actuators, numerical modeling of antiferroelectric and antiferroelectric-like actuators remains relatively unexplored. In this paper, we propose a phenomenological model of uniaxial antiferroelectric and antiferroelectric-like actuators based on their switching polarization behavior. Specifically, both the double hysteresis loop of antiferroelectric materials and the pinched hysteresis loop of antiferroelectric-like materials can be captured by two hyperbolic tangent functions. This allows us to cast a polarization-dependent strain and piezoelectric tensor into the constitutive laws. The proposed model is then implemented into a finite element framework, in which the voltage-induced deformation can be solved using the Newton–Raphson procedure. Numerical examples of both antiferroelectric and antiferroelectric-like actuators are illustrated and compared with experimental data, showing our proposed model can serve as a useful tool for the design and development of antiferroelectric and antiferroelectric-like actuators.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141769410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A dimensionally reduction approach to study kink soliton and its fission and fusion process of (3+1)-dimensional KdV-CDG equation 研究 (3+1)-dimensional KdV-CDG 方程的扭结孤子及其裂变和聚变过程的降维方法

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-26 DOI: 10.1002/jnm.3271

Mati ur Rahman, Mei Sun, Mehdi Salimi, Ali Ahmadian

引用次数: 0

Transistor modeling based on LM-BPNN and CG-BPNN for the GaAs pHEMT 基于 LM-BPNN 和 CG-BPNN 的 GaAs pHEMT 晶体管建模

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-23 DOI: 10.1002/jnm.3268

Qian Lin, Shuyue Yang, Ruilan Yang, Haifeng Wu

{"title":"Transistor modeling based on LM-BPNN and CG-BPNN for the GaAs pHEMT","authors":"Qian Lin, Shuyue Yang, Ruilan Yang, Haifeng Wu","doi":"10.1002/jnm.3268","DOIUrl":"10.1002/jnm.3268","url":null,"abstract":"In order to address the challenges of complex process and low precision in traditional device modeling, double hidden layer back propagation neural network (BPNN) are trained using the conjugate gradient (CG) algorithm and the Levenberg–Marquardt (LM) algorithm, the CG-BPNN and LM-BPNN models of small signal for gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) are obtained and analyzed here. At first, the scattering parameters (S-parameters) of GaAs pHEMT are divided into training set and test set randomly. Experimental results show that the CG-BPNN model is better than another S-parameters when predicting ImS12 with mean square error (MSE) of 7.6632e-06, while LM-BPNN model predicts ImS12 with MSE of 2.4672e-06. Meanwhile, the MSE of CG-BPNN model is higher than LM-BPNN model when predicting all the S-parameters. In addition, it shows a smaller fluctuation range for the error curve of LM-BPNN model, which is more stable than the CG-BPNN model. Therefore, the double hidden layer LM-BPNN model is the better choice to characterize the small signal of GaAs pHEMT.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141769334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of concentric circular antenna array for reducing the sidelobe level by employing sine cosine optimization algorithm 利用正弦余弦优化算法合成同心圆天线阵列以降低侧叶电平

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-23 DOI: 10.1002/jnm.3272

Nageswar Rao Thadikamalla, Prakasa Rao Amara

{"title":"Synthesis of concentric circular antenna array for reducing the sidelobe level by employing sine cosine optimization algorithm","authors":"Nageswar Rao Thadikamalla, Prakasa Rao Amara","doi":"10.1002/jnm.3272","DOIUrl":"10.1002/jnm.3272","url":null,"abstract":"The sine cosine algorithm (SCA), a meta-heuristic optimization method, is used in this study to provide a precise linear and elliptical antenna array design for synthesizing the ideal far-field radiation pattern in the fifth-generation (5G) communication spectrum. The wireless communication system will undergo dramatic changes thanks to the forthcoming 5G technology, which offers exceptionally high data rates, increased capacity, reduced latency, and outstanding service quality. The most important component of 5G communications is an accurate antenna array design for an optimum far-field radiation pattern synthesis with a suppressed sidelobe level (SLL) value and half power beam width (HPBW). While long-distance communication necessitates a low HPBW, the entire side lobe area needs a suppressed SLL to prevent interference. The SCA is used in this case to the optimal feeding currents applied to each array member in the design examples of the concentric circular antenna arrays (CCAA) discussed in this article. It shows the litheness and attainment of the propound algorithm named SCA, chosen CCAAs with three rings and varying amounts of components or antenna array sets those are stated as follows: Set I (4, 6, 8 elements), Set II (8, 10, 12 elements), Set III (6, 12, 18 elements), Set IV (8, 14, 20 elements) with and without the center element are amalgamate. Apply the PSO, Jaya, and SCA optimization algorithms for all four Sets of antenna arrays and compare the attained results; the SLL values achieved by the SCA technique are contrasted with those of other current optimization techniques. The outcomes of all examinations reveal that the SCA algorithm achieved a superior SLL reduction over other optimization techniques.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141769324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An approaching method based on integral for linear neutral delay differential equations by using Hermite polynomials 基于积分的线性中性延迟微分方程逼近法（使用赫米特多项式

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-15 DOI: 10.1002/jnm.3266

Şuayip Yüzbaşı, Özlem Karaağaçlı

引用次数: 0

Novel quantum-dot cellular automata BCD to excess-3 code converter 新型量子点蜂窝自动机 BCD 至超 3 码转换器

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-12 DOI: 10.1002/jnm.3269

Reza Akbari-Hasanjani, Moein Kianpour, Leila Dehbozorgi, Reza Sabbaghi-Nadooshan, Majid Haghparast

{"title":"Novel quantum-dot cellular automata BCD to excess-3 code converter","authors":"Reza Akbari-Hasanjani, Moein Kianpour, Leila Dehbozorgi, Reza Sabbaghi-Nadooshan, Majid Haghparast","doi":"10.1002/jnm.3269","DOIUrl":"https://doi.org/10.1002/jnm.3269","url":null,"abstract":"Binary-code decimal (BCD) to Excess-3 converters (BCD-XS3) can be used as an interface between two systems with different codes, and they can be used to synchronize those systems. Two novel approaches for quantum dot cellular automata BCD-XS3 are suggested, and the design parameters and the amount of energy dissipation are examined. The results have shown that design parameters in two designs of BCD-XS3 have been optimized. The new designs of the BCD-XS3 circuits are simulated, and the proposed design is examined in terms of complexity, latency, and total area. Design parameters have been optimized, showing the reduction in design parameters in the two proposed approaches, which are single layers. The first proposed design uses 119 cells with a delay of 1.5 clock cycles whose number of cells, complexity, and total area are improved by 16.78%, 25%, and 18.18%, respectively, compared with the best previous work. The second proposed design uses 81 cells with a delay of 1 clock. The number of cells, complexity, and total area are improved by 43.35%, 50%, and 50%, respectively, comparing the best previous work. Also, this study investigates the energy consumption in BCD-XS3 for 0.5Ek, 1Ek, and 1.5Ek tunneling energy, which is improved by 31.00%, 33.01%, and 34.68%, respectively, for the first design and 42.59%, 48.74%, and 52.46% for the second design.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid Cartesian/unstructured numerical method for efficient evaluation of scattered fields: Application to buried object detection from airborne platforms 用于有效评估散射场的笛卡尔/非结构化混合数值方法：应用于机载平台的埋藏物探测

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-12 DOI: 10.1002/jnm.3270

Lisa-Marie Mazzolo, Xavier Ferrieres

{"title":"Hybrid Cartesian/unstructured numerical method for efficient evaluation of scattered fields: Application to buried object detection from airborne platforms","authors":"Lisa-Marie Mazzolo, Xavier Ferrieres","doi":"10.1002/jnm.3270","DOIUrl":"https://doi.org/10.1002/jnm.3270","url":null,"abstract":"This paper focuses on the study and development of an efficient numerical method designed to simulate the radar cross section (RCS) of objects buried in lossy ground and illuminated by a plane wave. The primary objective aligns with the overarching challenge of detecting buried targets in the ground using an airborne radar system. In this scenario, a source antenna illuminates a considered 3D domain, and sensors receive the scattered field from the targets. To enable accurate and efficient simulations, the proposed tool utilizes a Cartesian/unstructured mesh and employs hybrid method that combines two finite volume solvers. In the contents of the paper, we first present a strategy for obtaining Cartesian/unstructured meshes. Subsequently, we study the hybridization of two specific finite volume schemes. Additionaly, a ground and a Near- to Far-field model are introduced for buried targets. To validate and showcase the advantages of our hybrid approach, practical examples are presented. Finally, the strategy designed for handling meshes composed of multiple Cartesian and unstructured zones is detailed.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3270","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0