International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Noise Factor of a Transmission Line Subjected to Thermal Gradients","authors":"Sergio Colangeli,&nbsp;Walter Ciccognani,&nbsp;Patrick E. Longhi,&nbsp;Ernesto Limiti","doi":"10.1002/jnm.70007","DOIUrl":"https://doi.org/10.1002/jnm.70007","url":null,"abstract":"<div>\u0000 \u0000 <p>A novel, analytical treatment of noise factor in ideal transmission lines subjected to thermal gradients is presented. Temperature dependence on the propagation direction is assumed linear, whereas line loss is initially considered constant. The latter restriction is then removed, in such a manner that, for the first time in the literature, linearly varying line losses are also addressed. In both cases, closed formulae are presented allowing to compute line noise factor for arbitrary source terminations. Previous numerical implementations of the underlying theory are also reappraised both as an introduction to the Reader and as a test bench of the closed-form results. A discussion of the effects of a non-uniform temperature distribution across the transverse section of the transmission line is provided upfront, so as to clarify the conditions under which the usual simplifications are valid. This discussion too is believed by the Authors to be original.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Wide Stopband Bandpass Filter Using Second-Order M-Type Circuit Based on Glass-Based IPD Technology","authors":"Jianye Wang,&nbsp;Yazi Cao,&nbsp;Wei Wu,&nbsp;Gaofeng Wang","doi":"10.1002/jnm.70010","DOIUrl":"https://doi.org/10.1002/jnm.70010","url":null,"abstract":"<div>\u0000 \u0000 <p>An ultra-wide stopband bandpass filter (BPF) using second-order M-type circuit is proposed by virtue of glass-based integrated passive device (IPD) technology. The second-order M-type circuit is composed of two first-order M-type circuits in series. The first-order M-type circuit consists of a low-pass filter (LPF) and a high-pass filter (HPF), each of which can generate one transmission zero. The second-order M-type circuit can generate two transmission zeros in the low frequency band and another two transmission zeros in the high frequency band, which can achieve high rejection in the upper ultra-wide stopband. The proposed BPF covering 3.3–4.2 GHz is fabricated with a compact size of 1.0 mm × 1.0 mm × 0.3 mm on glass-based IPD technology. According to the measurements, the fabricated BPF can achieve a minimum in-band insertion loss less than 1.4 dB, a return loss better than 15.6 dB, and more than 20 dB ultra-wide stopband rejection from 5.81 to 43.5 GHz. Compared to the previous designs, the proposed BPF shows the superior advantages of compact size and ultra-wide stopband.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Accuracy Analyses of FDTD Resonance Frequency Calculations for a Partially Dielectric-Filled Cavity","authors":"Osman S. Bişkin,&nbsp;Talha Saydam,&nbsp;Serkan Aksoy","doi":"10.1002/jnm.70011","DOIUrl":"https://doi.org/10.1002/jnm.70011","url":null,"abstract":"&lt;div&gt;\u0000 \u0000 &lt;p&gt;In this study, accuracy analyses of resonance frequency calculations for a three-dimensional partially dielectric-filled cavity are investigated by using finite difference time domain (FDTD) method. The calculations are performed for low- and high-contrast lossless dielectric materials. In order to excite multicavity modes, the cavity is driven by a Gaussian pulse source. The main error sources for the numerical resonance frequency calculations of the partially dielectric-filled cavity are (i) applied technique for treatment of a dielectric interface between free space and material medium and (ii) numerical dispersion of the FDTD method. The effects of these errors are analyzed both in detail. A no averaging (without any averaging), a proper averaging technique for the low-/high-contrast case, and the dielectric functioning technique with three different distances of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;mo&gt;∆&lt;/mo&gt;\u0000 &lt;mi&gt;z&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mo&gt;,&lt;/mo&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;∆&lt;/mo&gt;\u0000 &lt;mi&gt;z&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mo&gt;,&lt;/mo&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;and&lt;/mtext&gt;\u0000 &lt;mspace&gt;&lt;/mspace&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;7&lt;/mn&gt;\u0000 &lt;mo&gt;∆&lt;/mo&gt;\u0000 &lt;mi&gt;z&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 3Delta z,5Delta z,mathrm{and} 7Delta z $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; are applied for the treatment of dielectric interface. Additionally, four spatial resolutions of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /10 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;20&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /20 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;30&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /30 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, and &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;40&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /40 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; are used for the numerical dispersion analyses. The calculated results ","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hyperparameter Optimized SVR Model Based on Particle Swarm Algorithm for RF Power Transistors","authors":"Zhiwei Gao,&nbsp;Bo Liu,&nbsp;Giovanni Crupi,&nbsp;Jialin Cai","doi":"10.1002/jnm.70013","DOIUrl":"https://doi.org/10.1002/jnm.70013","url":null,"abstract":"<div>\u0000 \u0000 <p>A novel approach for optimizing the hyperparameters of a support vector regression (SVR) model is presented for radio frequency (RF) power transistors. In standard SVR models, hyperparameters are enhanced using grid search optimization (GSO), which can be inefficient. In this study, particle swarm optimization (PSO) is introduced as a method for optimizing hyperparameters in a SVR model that increases the model optimization efficiency significantly in comparison with GSO while maintaining a high level of performance. To verify the accuracy and effectiveness of the model, a 10-W GaN power transistor produced by Wolfspeed is used. In comparison to the existing GSO-SVR model, the proposed PSO-SVR model demonstrates superior performance and efficiency.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Analytical Subthreshold I–V Model of SiC Double Gate JFETs","authors":"Yi Li,&nbsp;Tao Zhou,&nbsp;Zixuan Guo,&nbsp;Yuqiu Yang,&nbsp;Junyao Wu,&nbsp;Huan Cai,&nbsp;Jun Wang,&nbsp;Jungang Yin,&nbsp;Qin Liu,&nbsp;Linfeng Deng","doi":"10.1002/jnm.70008","DOIUrl":"https://doi.org/10.1002/jnm.70008","url":null,"abstract":"<div>\u0000 \u0000 <p>SiC double gate (DG) junction field effect transistor (JFET) is promising for low-noise and high-temperature electronics. Existing studies indicate that JFETs can be considered a special case of MOSFETs when the oxide layer thickness approaches zero. In this article, we exploited the structural similarity between the DG JFETs and the DG MOSFETs. By obtaining the 2D Poisson's equation for the DG MOSFETs and deriving the limits, we developed a model for calculating the channel current of SiC DG JFETs in the subthreshold region. The model is derived from device physics, requiring no fitting parameters and offering relatively low computational complexity. The results indicate that, whether for enhancement mode or depletion mode JFETs, the calculated values of this model are in good agreement with the 2D numerical analysis results obtained from Silvaco Atlas. Moreover, for enhancement mode JFETs, even when significant short-channel effects occur, the subthreshold current can still be well predicted. In addition, the model displays predictive capability for the depletion-mode JFETs.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of High-Performance Schottky Barrier β-Ga2O3 MOSFET With Enhanced Drain Current, Breakdown Voltage, and PFOM","authors":"Md Zafar Alam,&nbsp;Imran Ahmed Khan,&nbsp;S. Intekhab Amin,&nbsp;Aadil Anam,&nbsp;Mirza Tariq Beg","doi":"10.1002/jnm.70009","DOIUrl":"https://doi.org/10.1002/jnm.70009","url":null,"abstract":"<div>\u0000 \u0000 <p>In this article, a Schottky barrier β-Ga₂O₃ MOSFET is proposed. It shows improvements in drain saturation current, <i>I</i>_on/<i>I</i>_off ratio, transconductance, and off-state breakdown voltage. The proposed design, which implements the Schottky barrier source and drain contacts, has led to reduced on-state resistance (<i>R</i>_on), reduced forward voltage drops, faster switching speed, higher frequency, and improved efficiency. After device optimization, we determined that a source and drain having a work function of 3.90 eV result in the highest drain saturation current of (<i>I</i>_ds) 264 mA. Additionally, in the transfer characteristics, we demonstrate that increasing the channel doping concentration led to a shift toward depletion mode operation, while decreasing the doping concentration moved the device toward enhancement mode at the cost of drain current. Analysis of lattice temperature and self-heating effects on different substrates has also been performed. Furthermore, introducing a passivation layer of SiO₂ as a gate oxide and an unintentionally doped (UID) layer of 400 nm doping concentration of 1.5 × 10¹⁵ cm⁻³, results in further significant improvements in the drain saturation current (<i>I</i>_ds) of 624 mA and transconductance of 38.09 mS, approximately doubling their values compared with the device without a passivation layer of SiO₂ and an <i>I</i>_on/<i>I</i>_off ratio of 10¹⁵, and the device's performance at various substrate temperatures has been evaluated. In addition, the inclusion of a passivation layer of SiO₂ improves the breakdown voltage to 2385 V, which is significantly high compared with the conventional device. Moreover, the lower specific-on-resistance <i>R</i>_on,sp of 7.6 mΩ/cm² and higher breakdown voltage then the high-power figure of merit (PFOM) (BV²/<i>R</i>_on,sp) of 748 MW/cm² have been achieved.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Optimization of Multilayered Microwave Absorber Structures for X-Band Frequencies: Application on Composite Materials Comprising Ceramic, Polyaniline/Magnetite, and Carbon Nanotubes","authors":"Benzaoui Karim,&nbsp;Ales Achour,&nbsp;Medjaouri Youcef Amin,&nbsp;Zaoui Abdelhalim","doi":"10.1002/jnm.70006","DOIUrl":"https://doi.org/10.1002/jnm.70006","url":null,"abstract":"<div>\u0000 \u0000 <p>The characteristics of multilayered microwave absorbing materials are very efficient compared with those of single layer. In this article, a hybrid optimization algorithm (genetic algorithm + pattern search) combined with transmission line matrix method has been presented. The selection of parameters, including the arrangement of layers, thickness of layers, absorption index, and shielding efficiency, forms the foundation of this process. The optimization algorithm was applied to two new multilayered structures. The first structure consists of conductive layers (CLs) of carbon nanotube (CNT) with ceramic layers of zirconium dioxide <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>ZrO</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({mathrm{ZrO}}_2right) $$</annotation>\u0000 </semantics></math>. The second structure includes CLs of CNT with layers based on magnetite polyaniline nanomaterial (PANI_<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>Fe</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>O</mi>\u0000 <mn>4</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{Fe}}_3{mathrm{O}}_4 $$</annotation>\u0000 </semantics></math>). Performances of both structures were evaluated in the X-band frequency range. Simulation results showed that both designs have higher absorption index picks (&gt; 90%) and, low <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>S</mi>\u0000 <mn>11</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {S}_{11} $$</annotation>\u0000 </semantics></math> magnitude value with low layer thickness. This approach offers a solid foundation for future experimental trials in the development of efficient microwave absorbing and shielding structures with tunable electromagnetic performances suitable for X-band applications.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of Microstrip Line Fed Gap Coupled Triple Band Slotted Patch Antenna for WiMAX, WLAN, and Sub-6 GHz 5G Applications","authors":"Ramesh Kumar Verma,&nbsp;Vikram Bali,&nbsp;Akhilesh Kumar,&nbsp;Prabina Pattanayak,&nbsp;Ravi Kant Prasad,&nbsp;Maninder Singh","doi":"10.1002/jnm.70005","DOIUrl":"https://doi.org/10.1002/jnm.70005","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents a gap coupled triple band slot loaded microstrip patch antenna with parasitic patches. It consist inverted U-shape and inverted T-shape open-ended slots along with a rectangular slot at center of patch. The inverted U-shape open-ended slot generates a driven patch at bottom side and an inverted U-shape parasitic patch at middle side of patch while inverted T-shape open-ended slot generates two rectangular shape parasitic patches of same dimension at top side of patch. The proposed gap coupled antenna covers 2.29 to 2.77 GHz in first band, 3.25 to 3.65 GHz in second band and 4.67 to 5.72 GHz in third band with return losses of −23.2, −19.90, and −38.06 dB, respectively. The proposed antenna resonates at 2.57, 3.48, and 5.37 GHz with fractional bandwidth of 18.97% (480 MHz), 11.59% (400 MHz), and 20.21% (1050 MHz), respectively. The return loss and bandwidth of presented antenna is increases gradually by loading inverted U-shape and inverted T-shape open-ended slots along with a rectangular slot in antenna patch. The proposed antenna exhibits stable peak gain of 4.45, 4.81, and 5.26 dBi and efficiency of 89.5%, 89%, and 90% in three resonating bands. The antenna resonating bands are applicable for WiMAX: 2.5/3.5/5.5 GHz (2.5–2.69, 3.4–3.69, and 5.25–5.85 GHz), WLAN: 2.4/5.2 GHz (2.4–2.484 and 5.15–5.35 GHz) and sub-6 GHz 5G: 3.5 GHz (3.3–3.8 GHz). The size of antenna is 40 mm × 50 mm (0.34 × <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msubsup>\u0000 <mrow>\u0000 <mn>0.43</mn>\u0000 <mi>λ</mi>\u0000 </mrow>\u0000 <mn>0</mn>\u0000 <mn>2</mn>\u0000 </msubsup>\u0000 </mrow>\u0000 <annotation>$$ 0.43{lambda}_0^2 $$</annotation>\u0000 </semantics></math> at frequency 2.57 GHz). The gap coupled antenna geometry is fed by microstrip line feed and simulated by IE3D simulation tool.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142860958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing FeFET Structures for Non-Volatile On-Chip Memories: Design and Comparative Analysis","authors":"Mandeep Singh,&nbsp;Tarun Chaudhary,&nbsp;Balwinder Raj","doi":"10.1002/jnm.70004","DOIUrl":"https://doi.org/10.1002/jnm.70004","url":null,"abstract":"<div>\u0000 \u0000 <p>FeFET architectures for non-volatile on-chip memory are designed and compared in this investigation study. Because of its inherent non-volatile properties and low power requirements, FeFETs are attracting a lot of interest as prospective candidates for future memory technology. The aim of this paper is to investigate several FeFET designs and assess how well they function in terms of important factors including durability, retention, speed, and endurance. Using device simulations and experimental data, a number of FeFET architectures, such as MFS, MFIS, MFMIS, and MF-ABO₃, are analyzed and contrasted. Comparative study gives light on the advantages and disadvantages of various FeFET architectures; improving our comprehension of how well-suited they are for non-volatile on-chip memory. This work will contribute to the improvement of FeFET devices for upcoming integrated circuits and progress the development of sophisticated FeFET-based memory techniques.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SG-FET Based Spiking Neuron With Ultra-Low Energy Consumption for ECG Signal Classification","authors":"Babar M. Zargar,&nbsp;Mudasir A. Khanday,&nbsp;Farooq A. Khanday","doi":"10.1002/jnm.70003","DOIUrl":"https://doi.org/10.1002/jnm.70003","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents an energy-efficient single-transistor leaky integrate-and-fire neuron, based on Suspended Gate-FET (SG-FET), for signal classification and neuromorphic computing applications. By leveraging the SG-FET model, extensive simulations were conducted to demonstrate the device's remarkable neuronal ability. The device faithfully emulated the intricate behaviour of biological neurons, without the need for external circuitry. One of the standout achievements lies in the device's astonishingly low energy consumption of 94.5 aJ per spike. Therefore, it outperforms the previously proposed one-transistor (1-T) neurons, which makes it a potential candidate for energy-efficient neuromorphic computing. To verify the practical viability of the device, an emulation was seamlessly integrated into a spiking neural network framework, allowing for real-time signal classification. In this specific case, the device excelled in the classification of electrocardiogram (ECG) signals, achieving an impressive accuracy rate of 85.6%. This outcome highlights the device's efficacy in handling real-world signal processing tasks with remarkable precision and efficiency.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}