International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Loss parameter identification of a welded ring core lamination of NO-electrical steel","authors":"David Ukwungwu,&nbsp;Kay Hameyer","doi":"10.1002/jnm.3234","DOIUrl":"https://doi.org/10.1002/jnm.3234","url":null,"abstract":"<p>Lamination packaging processes such as welding lead to a significant material degradation of non-oriented (NO) electrical steel sheets. Increase in iron loss and decrease in permeability are the results of the deterioration. For an efficient modeling of a drive train, the accurate parameterization of the iron loss is of upmost importance. For this reason, the iron loss model is expanded to include the influences of welding procedure. Its influence can be classified into changes in the grain size diameter <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>d</mi>\u0000 <mi>G</mi>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({d}_{mathrm{G}}right) $$</annotation>\u0000 </semantics></math> and residual stresses <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <mi>σ</mi>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left(sigma right) $$</annotation>\u0000 </semantics></math>. In this study, a locally varying iron loss model for the simulation of effects of weld-packaging on the electromagnetic properties of non-oriented (NO) electrical steel sheets is presented. Packaging technologies such as interlocking, welding, clinching and gluing are typically utilized for the manufacturing of electric steel stacks of electric machines. Understanding the micro-structural changes due to the macro-structural degradation accruing to weld-packaging helps in the accurate understanding of its influence on the performance and achievable range of the electric vehicle. Five (5) electric steel probes are annealed for the modeling of the local varying iron loss model at five different temperatures and electromagnetically measured to determine its magnetization and loss values. This will help in determining the grain size dependency of the different loss parameters. The annealed probes are measured under mechanical stresses showing also the residual stress dependency.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3234","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140546743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel adaptive control design for exponential stabilization of memristor-based CVNNs with time-varying delays using matrix measures","authors":"N. Jayanthi,&nbsp;R. Santhakumari,&nbsp;R. Grienggrai Rajchakit,&nbsp;M. Praneesh","doi":"10.1002/jnm.3231","DOIUrl":"https://doi.org/10.1002/jnm.3231","url":null,"abstract":"<p>The present study introduces a new adaptive control framework that aims to attain exponential stability in complex-valued neural network systems utilizing memristors while accounting for time-varying delays. The control issues in systems of this nature are mostly attributed to the presence of memristors and time-varying latency. To overcome these challenges and achieve stabilization outcomes, a methodology is employed that integrates adaptive control approaches inside a matrix-based framework. This study employs Lyapunov's stability theory to establish exponential stabilization conditions and conduct convergence analysis. The efficacy of the suggested control algorithm in achieving exponential stabilization and robustness under varied delays is demonstrated through numerical simulations.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140544404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A nonuniform linearized Galerkin-spectral method for nonlinear fractional pseudo-parabolic equations based on admissible regularities","authors":"M. Fardi,&nbsp;S. Mohammadi,&nbsp;A. S. Hendy,&nbsp;M. A. Zaky","doi":"10.1002/jnm.3233","DOIUrl":"https://doi.org/10.1002/jnm.3233","url":null,"abstract":"<p>In this paper, we deal with the nonlinear fractional pseudo-parabolic equations (FPPEs). We propose an accurate numerical algorithm for solving the aforementioned well-known equation. The problem is discretized in the temporal direction by utilizing a graded mesh linearized scheme and in the spatial direction by the Galerkin-spectral scheme. We investigate the stability conditions of the proposed scheme. We also provide an <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mi>H</mi>\u0000 <mn>1</mn>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$$ {H}^1 $$</annotation>\u0000 </semantics></math> error estimate of the proposed approach to demonstrate that it is convergent with temporal second-order accuracy for fitted grading parameters. The proposed scheme is also extended to tackle coupled FPPEs. Numerical experiments are provided to validate the accuracy and reliability of the proposed scheme.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140544510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neural network-based simulation of fields and losses in electrical machines with ferromagnetic laminated cores","authors":"Florent Purnode,&nbsp;François Henrotte,&nbsp;Gilles Louppe,&nbsp;Christophe Geuzaine","doi":"10.1002/jnm.3226","DOIUrl":"https://doi.org/10.1002/jnm.3226","url":null,"abstract":"<p>Due to the distribution of eddy currents inside ferromagnetic laminations, the accurate modeling of magnetic fields and losses in the laminated cores of electrical machines requires resolving individual laminations with a fine 3D discretization. This yields finite element models so huge and costly that they are unusable in daily industrial R&amp;D. In consequence, hysteresis and eddy currents in laminations are often simply disregarded in the modeling: the laminated core is assumed to be made of a reversible (non lossy) saturable material, and magnetic losses are evaluated a posteriori, by means of Steinmetz–Bertotti like empirical formulas. However, in a context where industry is struggling to minutely assess the impact of magnetic losses on their devices, this simplified approach is more and more regarded as inaccurate and unsatisfactory. This article proposes a solution to this issue, based on homogenization and on detailed mesoscopic simulations of eddy currents and hysteresis inside the laminations. The proposed approach results in a close-to-conventional 2D magnetic vector potential finite element model, but equipped with an irreversible parametric material law to represent the ferromagnetic stack. In each finite element, the parameters of the law are obtained from a neural network trained to best fit the detailed mesoscopic simulations of the laminations subjected to the same local magnetic field. This way, all aspects of the irreversible ferromagnetic response are appropriately accounted for in the finite element simulation, but at a computational cost drastically reduced with regard to a brute force 3D calculation, and comparable to that of conventional 2D finite element simulations.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140342976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Channel engineering for optimizing the electro-thermal characteristics in p-type GAA nanosheet transistors","authors":"Afshan Khaliq,&nbsp;Munir Ali,&nbsp;Muhammad Mateen,&nbsp;Shihua Huang","doi":"10.1002/jnm.3225","DOIUrl":"https://doi.org/10.1002/jnm.3225","url":null,"abstract":"<p>In this paper, we report simulation results for capacitance–voltage characteristics and temperature distribution in the cross-section of p-type gate-all-around nanosheet channel using an in-house developed numerical simulator. The effects of material, channel width, and crystallographic orientation on electrical and thermal properties of p-type nanosheet transistor are comprehensively investigated. The effect of channel engineering is analyzed, by evaluating density-of-states, hole density, current densities as well as distributions of temperature in the channel cross-section. Finally, the thermal reliability of the device is addressed in terms of thermal resistance. The density-of-states and the hole density distribution at the oxide/channel interface can well explain the effective intrinsic capacitance obtained from the simulation. The better uniformity of the hole density distribution across the cross-section of (110)/[001] channel, shows good promise for less performance fluctuation in terms of the thermal reliability issue.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140342952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation and numerical modeling of CuO films thickness influence on the efficiency of graphite/CuO/Ni solar cells","authors":"Serhii I. Kuryshchuk,&nbsp;Galyna O. Andrushchak,&nbsp;Taras T. Kovaliuk,&nbsp;Andriy I. Mostovyi,&nbsp;Hryhorii P. Parkhomenko,&nbsp;Sanjay H. Sahare,&nbsp;Mykhailo M. Solovan,&nbsp;Viktor V. Brus","doi":"10.1002/jnm.3230","DOIUrl":"https://doi.org/10.1002/jnm.3230","url":null,"abstract":"<p>Copper oxide is one of the original semiconductor materials employed for solar cells in the early 19th century before Silicon solar cells became popular due to their abundant availability, and eco-friendly nature. The optoelectronic parameters signify its huge potential in solar cell devices, though it's far from the theoretically predicted performance, provides tremendous scope to improve the solar cell performance by forming different heterojunctions. In this study, we investigated the copper oxide's (CuO) potential as an active layer in thin-film solar cells theoretically with a new structure consisting of a Glass/ITO/Graphite/CuO/Ni. Furthermore, the charge carrier's generation rate and theoretical thresholds for photovoltaic device efficiency were determined for varying active layer thicknesses by employing a normalized light intensity equivalent to that of the AM1.5 spectrum. The optimized performance of the simulated structure by considering realistic optical parameters of the solar cell was ~24%, obtained for the 500 nm CuO films. The performed theoretical work can help to employ CuO and boost the performance of solar cells experimentally.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140333194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DC-bias and temperature included CSWPL model for RF power transistors","authors":"Enduo Liu,&nbsp;Xiaoqiang Tang,&nbsp;Giovanni Crupi,&nbsp;Jialin Cai","doi":"10.1002/jnm.3229","DOIUrl":"https://doi.org/10.1002/jnm.3229","url":null,"abstract":"<p>A novel frequency domain behavioral modeling method for gallium-nitride (GaN) devices is presented in this article. By utilizing a multi-dimensional polynomial function, the proposed technique interpolates DC-bias voltage and temperature based on the Canonical section-wise piecewise linear (CSWPL) model framework. A detailed description of the model's theory is provided. With data from 10-W GaN devices, the model was implemented in commercial software and validated through both DC and radio frequency (RF) tests. A robust predictive ability is demonstrated by the obtained results, thus proving the accuracy of the developed modeling method. This model is superior to the standard CSWPL model in that it is capable of predicting transistor behavior at different bias voltages and temperatures using a single set of parameters, thereby greatly reducing the complexity of the model and the time required for extraction.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140333195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced tree-seed optimization based fractional-order PID controller design for simplified decoupled industrial tank systems","authors":"Achu Govind Kottayathu Rajagopalan,&nbsp;Subhasish Mahapatra,&nbsp;Soumya Ranjan Mahapatro","doi":"10.1002/jnm.3228","DOIUrl":"https://doi.org/10.1002/jnm.3228","url":null,"abstract":"<p>Controlling coupled tank systems is challenging due to interactions between tanks, nonlinear dynamics, time delays, uncertainties, and cross-coupling effects. The design of effective control strategies to address these complexities while ensuring stability and robust performance is difficult. Hence, this study focuses on presenting an innovative approach to enhance level control in coupled tank systems by employing a fractional-order proportional-integral-derivative (FOPID) controller. The FOPID controller is designed by imposing constraints on the performance metric and closed-loop gain. Besides, the defined optimization problem is solved by employing a tree seed algorithm. Further, the stability is analyzed graphically using the singular value analysis. The inherent complexities of coupled tank systems are effectively addressed by designing decouplers. The unique characteristics of the tree seed algorithm to navigate complex solution spaces and its effective handling of constraints offer a robust optimization framework. The validity and efficiency of the proposed method are analyzed in a range of simulation experiments conducted on distinct interconnected tank systems. Besides, the stability is verified graphically. The analysis highlights the effectiveness of the control law in handling uncertainties and disturbances. Besides, the proposed method reduces the settling time to around <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mn>20</mn>\u0000 <mo>%</mo>\u0000 </mrow>\u0000 <annotation>$$ 20% $$</annotation>\u0000 </semantics></math>. Through a systematic integration of optimization and comprehensive stability analysis, the study provides a holistic solution for optimizing level control in coupled tank systems.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140188508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An energy-efficient tunable threshold spiking neuron with excitatory and inhibitory function","authors":"Mudasir A. Khanday,&nbsp;Farooq A. Khanday","doi":"10.1002/jnm.3227","DOIUrl":"https://doi.org/10.1002/jnm.3227","url":null,"abstract":"<p>In this work, a complementary metal-oxide-semiconductor (CMOS) based leaky-integrate and fire neuron has been proposed and investigated for neuromorphic applications. The neuron has been designed in Cadence Virtuoso and validated experimentally. It has been observed that the neuron consumes a maximum energy of 68.87 fJ/spike. The response of the neuron to excitatory as well as inhibitory inputs has been studied. To verify the applicability, the proposed neuron has been explored for reconfigurable threshold logic to implement various linearly separable Boolean functions including OR, AND, NOT, NOR, and NAND. Moreover, the threshold tunability of the neuron has also been verified and this property has been exploited to design threshold-controlled logic gates. Instead of adjusting the weights of the applied inputs, the functionality of such gates can be controlled by changing the threshold of the neuron, simplifying the synaptic architecture of a neural network. Finally, a multilayer network has been designed and the recognition ability of the proposed network for MNIST handwritten digits has been verified with an accuracy of 96.93%.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140135433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of BTI-induced deterioration in vacuum based undoped structure","authors":"Rakesh Kumar,&nbsp;Meena Panchore","doi":"10.1002/jnm.3223","DOIUrl":"https://doi.org/10.1002/jnm.3223","url":null,"abstract":"<p>In this paper, an assessment of bias temperature instability (BTI) in <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mtext>high</mtext>\u0000 <mo>−</mo>\u0000 <mi>κ</mi>\u0000 <mo>/</mo>\u0000 <mtext>vacuum</mtext>\u0000 </mrow>\u0000 <annotation>$$ mathsf{high}-kappa /mathsf{vacuum} $$</annotation>\u0000 </semantics></math> based dual gate dopingless JLFET (HKV-DLJLFET) is carried out at 15 nm technology node. For this, the gate dielectric of HKV-DGDLJLFET is made of asymmetric combination of <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mtext>high</mtext>\u0000 <mo>−</mo>\u0000 <mi>κ</mi>\u0000 </mrow>\u0000 <annotation>$$ mathsf{high}-kappa $$</annotation>\u0000 </semantics></math> <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>hfO</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({hfO}_2right) $$</annotation>\u0000 </semantics></math> and vacuum dielectrics near the source/drain (S/D) side, which significantly minimizes the leakage current and enhances the reliability. Our simulation study have shown that the n-type HKV-DGDLJLFET exhibits 2.28 and 2.45 times less deterioration in drain current <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>I</mi>\u0000 <mi>D</mi>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({I}_Dright) $$</annotation>\u0000 </semantics></math> and transconductance <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>g</mi>\u0000 <mi>m</mi>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({g}_mright) $$</annotation>\u0000 </semantics></math> respectively, than n-type HKV-DGJLFET due to positive BTI (PBTI) for 2000 seconds at <math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mn>150</mn>\u0000 <mi>o</mi>\u0000 </msup>\u0000 <mi>C</mi>\u0000 </mrow>\u0000 <annotation>$$ {150}^{mathrm{o}}mathrm{C} $$</annotation>\u0000 </semantics></math>. Further, we have found that n-type HKV-DGDLJLFET has less deterioration in <math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>V</mi>\u0000 <mi>th</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {V}_{th} $$</annotation>\u0000 </semantics></math> and <math>\u0000","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140066503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}