International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献_第8页

A millimeter-wave ultra-wideband triplexer with high isolation and high power 具有高隔离度和高功率的毫米波超宽带三合一器

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-09-04 DOI: 10.1002/jnm.3288

Dong Li, Zhouyang Wei, Maoyan Wang, Zhenyu Hong, Boqi Wei, Juntao Lin, Lijie Sun, Jun Xu, Xiaochuan Zhang

引用次数: 0

Galerkin boundary element method for simulating lightning response of grounding grid in horizontal multilayered soil model considering soil ionization effect 考虑土壤电离效应的 Galerkin 边界元法模拟水平多层土壤模型中接地网的雷电响应

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-09-03 DOI: 10.1002/jnm.3285

Zhong-Xin Li, Peng Li, Xia Zhao

引用次数: 0

Temperature control technology for PCR 用于 PCR 的温度控制技术

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-09-03 DOI: 10.1002/jnm.3280

Tongxin Zhang, Gaozhe Cai, Zhuo Zhang, Qian Li, Chuanjin Cui

{"title":"Temperature control technology for PCR","authors":"Tongxin Zhang, Gaozhe Cai, Zhuo Zhang, Qian Li, Chuanjin Cui","doi":"10.1002/jnm.3280","DOIUrl":"https://doi.org/10.1002/jnm.3280","url":null,"abstract":"In order to solve the obvious nonlinear problem of temperature and complex structure of PCR instrument during nucleic acid amplification. In this paper, a new nucleic acid amplification device and temperature control algorithm were proposed. In the device, in order to improve the rise and fall rate and make the whole reaction device smaller and simpler, this paper uses a microfluidic chip for nucleic acid reaction. At the same time, in the warming and cooling module, the temperature is controlled by the semiconductor chilling plate, the air-cooled cooling device and the heat sink structure, which greatly improves the speed of nucleic acid amplification. In the algorithm, a hybrid algorithm is designed, using Particle Swarm Optimization (PSO) to optimize PID algorithm parameters, and then based on fuzzy theory, according to the temperature control requirements of nucleic acid amplification, fuzzy rules are analyzed and fuzzy reasoning is carried out, and then combined with PID to achieve rapid response and overshooting control of temperature control. Finally, the measurement noise is filtered by Kalman filter. Finally, COMSOL and MATLAB software are used to simulate and compare, and it is proved that the device has a certain heat dissipation effect in the process of nucleic acid amplification. This algorithm can improve the accuracy and robustness of the control system, improve the response speed, reduce the overshoot, shorten the adjustment time, and restrain the interference.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 5","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142137818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Behavioral modeling of LMBA with different back-off state using PSO optimized XGBoost method 使用 PSO 优化 XGBoost 方法建立具有不同后退状态的 LMBA 行为模型

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-29 DOI: 10.1002/jnm.3286

Yihang Ma, Giovanni Crupi, Jialin Cai, Chao Yu, Shichang Chen, Tao Zhou

引用次数: 0

Numerical solution of fractal-fractional differential equations system via Vieta-Fibonacci polynomials fractal-fractional integral operators 通过Vieta-Fibonacci多项式分形-分形积分算子数值求解分形-分形微分方程系统

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-28 DOI: 10.1002/jnm.3283

Parisa Rahimkhani, Yadollah Ordokhani, Sedigheh Sabermahani

{"title":"Numerical solution of fractal-fractional differential equations system via Vieta-Fibonacci polynomials fractal-fractional integral operators","authors":"Parisa Rahimkhani, Yadollah Ordokhani, Sedigheh Sabermahani","doi":"10.1002/jnm.3283","DOIUrl":"https://doi.org/10.1002/jnm.3283","url":null,"abstract":"The main idea of this work is to present a numerical method based on Vieta-Fibonacci polynomials (VFPs) for finding approximate solutions of fractal-fractional (FF) pantograph differential equations and a system of differential equations. Although the presented scheme can be applied to any fractional integral, we focus on the Caputo, Atangana-Baleanu, and Caputo-Fabrizio integrals with due to their privileges. To carry out the method, first, we introduce FF integral operators in the Caputo, Atangana-Baleanu, and Caputo-Fabrizio senses. Then, by applying the Vieta-Fibonacci polynomials and their FF integral operators together with the collocation method, the problem becomes reduced to a system of algebraic equations that can be solved by Mathematical software. In the presented scheme, acceptable approximate solutions are achieved by employing only a few number of the basic functions. Moreover, the error analysis of the presented method is investigated. Finally, the accuracy of the presented method is examined through the numerical examples. The proposed scheme is implemented for some famous systems of FF differential equations, such as memristor, which is a fundamental circuit element so called universal charge-controlled mem-element, convective fluid motion in rotating cavity, and Lorenz chaotic system.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 5","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142089820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative analysis of uncontrollable angles in direct torque and stator flux control and rotor flux control strategies: A numerical and experimental study 直接转矩、定子磁通控制和转子磁通控制策略中的不可控角度比较分析：数值和实验研究

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-26 DOI: 10.1002/jnm.3282

Mussaab Alshbib, Sohayb Abdulkerim, Abdulkader Ghazal

{"title":"Comparative analysis of uncontrollable angles in direct torque and stator flux control and rotor flux control strategies: A numerical and experimental study","authors":"Mussaab Alshbib, Sohayb Abdulkerim, Abdulkader Ghazal","doi":"10.1002/jnm.3282","DOIUrl":"https://doi.org/10.1002/jnm.3282","url":null,"abstract":"The uncontrollable angles (UAs) in direct torque control (DTC) algorithm is an important issue through which the effects of voltage vectors (VEs) on the magnetic flux and the torque are accurately determined. In this paper, a unique analysis of UAs is performed at different operating conditions, including parameters variations in two different strategies: Direct torque and stator flux control (DTC_SC) and (DTC_RC). Values of Those angles were accurately determined for wide speed, stator and rotor variations, and load changes. In addition, a detailed numerical comparison was performed in terms of these angles in the two strategies mentioned above for each operating condition. The comprehensive comparison showed the superiority of the DTC_RC strategy over its DTC_SC counterpart, being the maximum values of UAs in DTC_RC were 8°, 33°, and 21° versus 15°, 45°, and 38° in DTC_RC strategy for the following operations: Variable speed with variable stator resistance, variable speed with variable stator and rotor resistances, variable speed with variable load, respectively. MATLAB/Simulink results of the contributed analysis and comparisons were accomplished and validated. In addition, DS1103-based experimental tests supported and verified the theoretical analysis.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 5","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142077931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical modeling of HTS excited medium-speed wind generators with diode rectifier stator feeding 二极管整流器定子馈电 HTS 激励中速风力发电机的数值建模

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-26 DOI: 10.1002/jnm.3284

Robin Köster, Andreas Binder

{"title":"Numerical modeling of HTS excited medium-speed wind generators with diode rectifier stator feeding","authors":"Robin Köster, Andreas Binder","doi":"10.1002/jnm.3284","DOIUrl":"https://doi.org/10.1002/jnm.3284","url":null,"abstract":"Medium-speed wind generators in the MW-range with high-temperature superconducting excitation winding are analyzed by means of non-linear 2D and 3D FEM models. Besides an inverter-based sinusoidal stator current feeding, a grid connection via a diode rectifier is analyzed by using coupled FEM and circuit simulations. The newly proposed modeling techniques are used to determine the excitation requirement for speed-variable, unity power factor operation at constant stator voltage, as required for a diode rectifier feeding of the stator winding. 2D FEM models in the H-A-formulation are developed and used for the calculation of the hysteresis loss in the superconducting field winding at stationary operation as well as for an investigation of field current variations in the HTS field winding. The major modeling challenges consist in very long settling times of voltage-fed models, several strong model non-linearities and high requirements on the spatial discretization. Approaches for overcoming these difficulties with reasonable computational efficiency are proposed.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 5","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.3284","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142077922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physics-based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper) 基于物理的高功率射频应用 GaN HEMT 紧凑型模型：综述（特邀论文）

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-18 DOI: 10.1002/jnm.3276

Shuman Mao, Xiang Su, Qingzhi Wu, Yan Wang, Xiangyang Duan, Shen Tian, Xuehuan Li, Yuehang Xu

{"title":"Physics-based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)","authors":"Shuman Mao, Xiang Su, Qingzhi Wu, Yan Wang, Xiangyang Duan, Shen Tian, Xuehuan Li, Yuehang Xu","doi":"10.1002/jnm.3276","DOIUrl":"https://doi.org/10.1002/jnm.3276","url":null,"abstract":"The compact model plays a pivotal role as a critical link between device fabrication and circuit design. While conventional compact model theories and techniques are generally mature, the intricate physical mechanisms of gallium nitride (GaN) high-electron mobility transistors (HEMTs) pose challenges due to their strong non-linearity in high-power radio frequency (RF) applications. This complexity hinders achieving the required precision for applications using traditional modeling methods. Therefore, the development of physics-based compact modeling techniques becomes crucial for a deeper understanding of the intricate features of GaN HEMTs. This paper explores the advancements and the current state-of-the-art in physics-based compact models. The comprehensive review covers both intrinsic core models and real-device effects models. Core models are presented with a focus on fundamental concepts, development overviews, and applications. Additionally, the real-device effects models are introduced, encompassing advanced characterization techniques and modeling methodologies. Furthermore, the paper outlines future trends in physics-based compact modeling, providing valuable insights for individuals engaged in transistor compact modeling work.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142002573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga2O3 nano-HEMT 2DEG 的温度依赖性对场镀凹栅 III-氮化物/β-Ga2O3 纳米光刻管器件特性的影响

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-07 DOI: 10.1002/jnm.3281

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen, Nour El. I. Boukortt, Giovanni Crupi

{"title":"Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga2O3 nano-HEMT","authors":"G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen, Nour El. I. Boukortt, Giovanni Crupi","doi":"10.1002/jnm.3281","DOIUrl":"10.1002/jnm.3281","url":null,"abstract":"In this article, a field-plated and recessed gate III-Nitride Nano-HEMT developed on β-Ga2O3 substrate is proposed and investigated for various performance characteristics over different temperatures. The 2DEG (Two Dimensional Electron Gas) dependence on temperature is critical for commercial utilization of GaN-based HEMTs (high electron mobility transistors). Here, the temperature influence on 2DEG for proposed HEMT over the range of 300–400 K has been investigated. The results demonstrate that the 2DEG density of proposed HEMT reduces as temperature increases. It has been observed that phonon scattering results in a sharp decline in the mobility of 2DEG as temperature increases, which causes the electric field to decrease. It also exhibited that the cut-off frequency decreased over the temperature changes from 300 to 400 K due to diminution in electron mobility. This research aims to contribute an extensive overview of proposed III-Nitride Nano-HEMT designed on a lattice-matched substrate of β-Ga2O3 to foster future research on the latest developments in this field.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141936972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of multiplication factor of capacitor using single current follower differential input transconductance amplifier 利用单电流跟随器差分输入跨导放大器提高电容器的乘法系数

IF 1.6 4区工程技术

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-07 DOI: 10.1002/jnm.3279

Ajishek Raj, Meghana Shrivastava, D. R. Bhaskar, Pragati Kumar

{"title":"Enhancement of multiplication factor of capacitor using single current follower differential input transconductance amplifier","authors":"Ajishek Raj, Meghana Shrivastava, D. R. Bhaskar, Pragati Kumar","doi":"10.1002/jnm.3279","DOIUrl":"10.1002/jnm.3279","url":null,"abstract":"This paper presents a new circuit approach to realize a capacitance multiplier circuit with positive and negative multiplication factors. Based on this approach, two new implementations of positive and negative grounded capacitance multiplier (GCM) circuits are proposed, which utilize only one current follower differential input transconductance amplifier (CFDITA), in conjunction with only one resistor and one virtually grounded capacitor. The presented GCM circuits can enhance a low capacitance value to a very high value (used in low frequency applications), up to 9202 times its original value. An important aspect of the proposed circuits involves designing a lossy parallel inductor circuit by interchanging the passive elements (RC:CR transformation) with each other. The obtained value of the capacitance and inductance can be controlled independently and electronically through the transconductance of CFDITA. The practical usability of the suggested circuits as first and second order filters is discussed. The functionality of the proposed GCM circuits is validated using CMOS CFDITA implemented with 180 nm TSMC technology parameters. Experimental verification of the proposed circuits and application examples is reinforced through the utilization of CFDITA implemented with readily available ICs AD844 and LM13700. These outcomes emphasize the dependability of the suggested circuits.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 4","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141937050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0