International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Transient analysis of growth/decay in materials utilizing a digital exponential peeling method","authors":"Jayjit Mukherjee,&nbsp;Amit Malik,&nbsp;Seema Vinayak,&nbsp;Vikram Kumar,&nbsp;D. S. Rawal,&nbsp;R. S. Dhaka","doi":"10.1002/jnm.3245","DOIUrl":"https://doi.org/10.1002/jnm.3245","url":null,"abstract":"<p>An algorithm is proposed to implement digital peeling to determine dominant time constants of an exponential transient process. The method is simpler to implement and reduces computational time to a large extent in comparison to other techniques widely used. Apart from a synthetic test function, the algorithm has been implemented on reported experimental transient decay curves of Cs₂HfCl₆ (CHC) single crystal scintillation to verify its efficacy. Finally, drain current detrapping transients of unpassivated AlGaN/GaN high electron mobility transistors (HEMTs) are analyzed to determine the trap energy levels and concentrations. The validation of this digital peeling technique is also carried out by comparing with conventional method of time constant extraction from HEMT current transients. The extracted exponentials from the transient data efficiently fits well with the experimental data and can be extensively used for transient analysis. The digital peeling technique has wide applicability and can be used to analyze all exponential processes which occur in all domains of science.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140902725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An open-set method for automatic recognition of low probability of intercept radar waveforms based on reciprocity points learning","authors":"Zhilin Liu,&nbsp;Jindong Wang,&nbsp;Qidong Ge,&nbsp;Bo Yang,&nbsp;Yinlong Li,&nbsp;Hengwei Zhang","doi":"10.1002/jnm.3241","DOIUrl":"https://doi.org/10.1002/jnm.3241","url":null,"abstract":"<p>Deep learning-based methods for Low Probability of Intercept radar waveform recognition typically assume that the signal to be recognized belongs to a known and finite set of classes. However, in practical scenarios, the electromagnetic signal environment is open and there may be a large number of unknown signals, making such methods difficult to apply. To address this issue, a novel open-set recognition method based on reciprocal points is proposed. This approach uses a neural network to extract a high-dimensional time-frequency feature map of the signal, and measures the difference between the known and unknown signals by computing the distance between the feature vector and the reciprocal points. This allows the model to correctly identify known class signals while simultaneously detecting unknown signals. Experimental results show that the proposed method achieves open-set recognition of Low Probibability of Intercept radar signals. On test signals with signal-to-noise ratios ranging from 6 dB to 15 dB, the model achieves nearly 100% accuracy in identifying known class signals and more than 90% accuracy in detecting unknown signals.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140895319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Common-mode current reduction in EMP coupling with the star-quad cable having a reference conductor","authors":"Anmol Abbas Lodhi,&nbsp;Yu Zhu,&nbsp;Oussama Gassab","doi":"10.1002/jnm.3238","DOIUrl":"https://doi.org/10.1002/jnm.3238","url":null,"abstract":"<p>The coupling of electromagnetic pulse (EMP) with the star-quad cable having reference conductor is analyzed by using the proposed model, which is based upon multi-conductor transmission line theory. Expressions for common-mode (CM) and differential-mode (DM) currents are developed. Two cases are mainly discussed: the first case is the star-quad cable with a central reference conductor, and the second case with the outside reference conductor. A rigorous comparison between these two cases shows that when the reference conductor is placed at the center, the magnitude of CM current is reduced dramatically, which is beneficial for electromagnetic compatibility (EMC). The CM current magnitude of the outside reference conductor is relatively very high due to the large CM current loop area, which is the least possible for the central reference conductor. There is no significant change in the DM current magnitude for both cases because the DM current has no direct dependence on the CM current loop area. A commercial software, FEKO, which utilizes the method of momentum (MoM), is used to compare the results of our proposed method, which are in good agreement.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140895317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An improved two-dimensional (2,4) finite-difference time-domain method for Lorentz dispersive media","authors":"Theodoros T. Zygiridis,&nbsp;Stamatios A. Amanatiadis,&nbsp;Nikolaos V. Kantartzis","doi":"10.1002/jnm.3244","DOIUrl":"https://doi.org/10.1002/jnm.3244","url":null,"abstract":"<p>The credible solution of discretized Maxwell's equations in spaces occupied by Lorentz dispersive media is the main subject of this work. Specifically, we introduce a finite-difference time-domain (FDTD) algorithm with a typical (2,4) structure that features dispersion-relation-preserving characteristics and produces reduced numerical errors in two-dimensional electromagnetic simulations, compared to the standard approach with similar computational requirements. We consider the case of dispersive media with non-vanishing absorption coefficients and investigate different options for the suitable modification of the spatial approximations, so that the accomplished accuracy is optimized for a given computational overhead. The properties of the proposed FDTD technique are thoroughly examined, both theoretically and in numerical tests, and the performance upgrade compared with the conventional solution is assessed.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140895318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An improved noise model of InP HEMT for millimeter wave application","authors":"Zhichun Li,&nbsp;Yuanting Lv,&nbsp;Ao Zhang,&nbsp;Jianjun Gao","doi":"10.1002/jnm.3240","DOIUrl":"https://doi.org/10.1002/jnm.3240","url":null,"abstract":"<p>A new temperature noise model, including the influence of gate-drain series resistance <i>R</i>_gd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature <i>T</i>_gd of <i>R</i>_gd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140817222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reduced partial shading effect and enhancement of performance metrics using a Fibonacci based algorithm","authors":"Venkata Madhava Ram Tatabhatla,&nbsp;Varun Agarwal,&nbsp;Anshul Agarwal,&nbsp;Asheesh Kumar Singh","doi":"10.1002/jnm.3242","DOIUrl":"https://doi.org/10.1002/jnm.3242","url":null,"abstract":"<p>Partial shading within arrays diminishes power output, induces hotspots, and compromises module integrity, thereby impacting system performance. The presence of bypass diodes further exacerbates these issues by introducing non-convexities in power curves, leading to additional power losses. To solve this problem, a new reconfiguration technique named Fibonacci Random Number Generator is proposed in this work which minimizes the effects of shading on the panels. The proposed methodology swiftly reduces current discrepancies between PV array rows by reshuffles the panels in an array to disperse the shade better using a mathematical formula resulting in increased power output and smoother power curves during partial shading events. The effectiveness of the proposed method is measured in terms of GMPP, row current calculations, power loss (PL), mismatch losses (ML), execution ratio (ER), fill factor (FF), and capacity factor (CF) for four distinctive shading conditions. Validation of results in software and hardware platforms showcase the applicability of proposed approach in real-time environments. Results indicate significant average power improvements of 25.49%, 15.47%, and 9.29% compared to existing popular reconfigurations like Skyscraper, Ken-Ken, and Chaotic baker map. The proposed method stands out as a potent tool for optimizing PV arrays within real-world systems grappling with partial shading issues.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140808016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An improved small-signal model for GaN HEMTs devices","authors":"Jing Bai,&nbsp;Ao Zhang,&nbsp;Jiali Cheng,&nbsp;Jianjun Gao","doi":"10.1002/jnm.3237","DOIUrl":"https://doi.org/10.1002/jnm.3237","url":null,"abstract":"<p>An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance <i>L</i>_ds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured <i>S</i>-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140619743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on single-mode transmission in non-radiative dielectric waveguide","authors":"Keisuke Kazama,&nbsp;Md. Iquebal Hossain Patwary,&nbsp;Akito Iguchi,&nbsp;Yasuhide Tsuji","doi":"10.1002/jnm.3235","DOIUrl":"https://doi.org/10.1002/jnm.3235","url":null,"abstract":"<p>In order to develop millimeter-wave integrated circuits, low-loss and compact waveguide devices have been intensively investigated in recent years. Non-radiative dielectric waveguide (NRD guide) is expected to be a platform for millimeter-wave and THz-wave circuits because of its non-radiative nature. However, conventional NRD guides support <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>LSM</mi>\u0000 <mn>01</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{LSM}}_{01} $$</annotation>\u0000 </semantics></math> and <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>LSE</mi>\u0000 <mn>01</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{LSE}}_{01} $$</annotation>\u0000 </semantics></math> modes simultaneously and mode conversion between these modes often occurs at bends and discontinuities. Therefore, circuit devices have to be carefully designed not to excite unwanted <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>LSE</mi>\u0000 <mn>01</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{LSE}}_{01} $$</annotation>\u0000 </semantics></math> mode. In this paper, we propose a sub-wavelength grating NRD guide (SWG-NRD guide) to achieve single-mode transmission band of <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>LSM</mi>\u0000 <mn>01</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{LSM}}_{01} $$</annotation>\u0000 </semantics></math> mode. SWG structure can easily control dispersion property of transmission modes and cut-off frequency of <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>LSE</mi>\u0000 <mn>01</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{LSE}}_{01} $$</annotation>\u0000 </semantics></math> mode can be greatly shifted to higher frequency side. The designed SWG-NRD guide achieves a wide transmission band of 20 GHz with a central frequency of 60 GHz. We also propose a taper waveguide to connect SWG-NRD guide with the conventional NRD guide with low reflection. Finally, we present the propagation characteristics of the SWG-NRD guide bend. The proposed SWG-NRD guide shows high transmission efficiency and overcomes the problems of mode conversion in NRD guides.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140559630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-conductor electromagnetic coupling model for sensitive wires subject to driven wire in complex electronic systems","authors":"Fan Jiang,&nbsp;Lulu Chen,&nbsp;Bing Xue,&nbsp;Xinxin Tian,&nbsp;Liang Hua Ye,&nbsp;Jian-Feng Li,&nbsp;Duo-Long Wu","doi":"10.1002/jnm.3236","DOIUrl":"https://doi.org/10.1002/jnm.3236","url":null,"abstract":"<p>A novel multi-conductor electromagnetic coupling model for the sensitive-wire subject to driven wire in a high-precision machining workbench is proposed in this paper. The general coupling model for an <i>N-</i>wire system is derived and is used to evaluate the wire coupling effect. Furthermore, 4-wire and 3-wire models are demonstrated to verify the accuracy through full-wave electromagnetic simulation below 10 MHz. The results show that the error between the proposed method and the full-wave electromagnetic simulation is less than 10%, demonstrating the high efficiency and accuracy of the proposed method. When the parameters of the driven power wire and the most sensitive wire are fixed and the parameters of neighboring wires are swept, the maximum fluctuation of the induced current on the most sensitive wire is 6.1 dB. The efficient calculation method proposed in this work helps reduce the risk of electromagnetic interference in complex electronic systems and improves the design efficiency of wires. It is promising to become a high-performance method with high efficiency and precision.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140559631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dielectrically modulated hetero-material double gate tunnel field-effect transistor for label free biosensing","authors":"Ifrah Shakeel,&nbsp;Shazia Rashid,&nbsp;Farooq A. Khanday,&nbsp;Mudasir A. Khanday","doi":"10.1002/jnm.3232","DOIUrl":"https://doi.org/10.1002/jnm.3232","url":null,"abstract":"<p>This work proposes a novel double gate hetero-material tunnel field effect transistor for label free biosensing applications. The device consists of III-V semiconductor gallium arsenide (GaAs) which serves as a substrate. Source and drain regions made of Germanium are used due to its compatibility with GaAs. Cavities of 15 × 1.5 nm are created near source-channel junctions for the biomolecules to be placed in. The <i>I</i>_ON sensitivity of 2.23 × 10⁶ for neutral biomolecules has been obtained from 2D simulations using ATLAS TCAD software. Furthermore, transconductance sensitivity of 2.27 × 10⁶, <i>I</i>_ON/<i>I</i>_OFF sensitivity of 2.46 × 10⁵, subthreshold swing (SS) sensitivity of 28.6 mV/decade and threshold voltage sensitivity of 1.2 mV for neutral biomolecules is obtained. The <i>I</i>_ON sensitivity of 3.93 × 10⁶ and 1.42 × 10⁶ for positively and negatively charged biomolecules respectively has been obtained. Also, SS sensitivity of 28.3 and 28.8 mV/decade for positively and negatively charged biomolecules respectively has been observed. <i>I</i>_ON sensitivity shows that the proposed device is 1000× better than the conventional one.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140546744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}