{"title":"通过插入 InGaN 量子阱研究和优化增强型单片集成白光 HEMT-LED 性能","authors":"Hindol Bhattacharjee, Anup Dey, Preetisudha Meher","doi":"10.1002/jnm.3289","DOIUrl":null,"url":null,"abstract":"<p>In this paper five enhancement-mode monolithically integrated white-light High electron mobility transistors-light emitting diodes (HEMT-LED) structures are proposed and simulated to obtain maximum light intensity, drain current I<sub>d</sub> and maximum trans-conductance <i>g</i><sub>m</sub>. In first four HEMT-LED structures white light is generated by combining inbuilt yellow and blue lights and in fifth proposed structure the white light is generated with the combination of inbuilt red, green and blue lights. The InGaN quantum wells (QWs) are inserted in to e-mode ITO/p-GaN gate HEMT structures and the desired wavelength of light spectrums are generated by changing the in content (mole fraction), to obtain inbuilt white light. Among five proposed structures one shows Maximum <i>I</i><sub>d-max</sub> of 925 mA and maximum <i>g</i><sub>m</sub> of 250 mS, which is significantly higher than any HEMT-LED structures reported before. All the proposed structures are simulated in Silvaco TCAD software.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study and optimising performance of enhancement-mode monolithically integrated white-light HEMT-LED by inserting of InGaN quantum wells\",\"authors\":\"Hindol Bhattacharjee, Anup Dey, Preetisudha Meher\",\"doi\":\"10.1002/jnm.3289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this paper five enhancement-mode monolithically integrated white-light High electron mobility transistors-light emitting diodes (HEMT-LED) structures are proposed and simulated to obtain maximum light intensity, drain current I<sub>d</sub> and maximum trans-conductance <i>g</i><sub>m</sub>. In first four HEMT-LED structures white light is generated by combining inbuilt yellow and blue lights and in fifth proposed structure the white light is generated with the combination of inbuilt red, green and blue lights. The InGaN quantum wells (QWs) are inserted in to e-mode ITO/p-GaN gate HEMT structures and the desired wavelength of light spectrums are generated by changing the in content (mole fraction), to obtain inbuilt white light. Among five proposed structures one shows Maximum <i>I</i><sub>d-max</sub> of 925 mA and maximum <i>g</i><sub>m</sub> of 250 mS, which is significantly higher than any HEMT-LED structures reported before. All the proposed structures are simulated in Silvaco TCAD software.</p>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3289\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3289","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Study and optimising performance of enhancement-mode monolithically integrated white-light HEMT-LED by inserting of InGaN quantum wells
In this paper five enhancement-mode monolithically integrated white-light High electron mobility transistors-light emitting diodes (HEMT-LED) structures are proposed and simulated to obtain maximum light intensity, drain current Id and maximum trans-conductance gm. In first four HEMT-LED structures white light is generated by combining inbuilt yellow and blue lights and in fifth proposed structure the white light is generated with the combination of inbuilt red, green and blue lights. The InGaN quantum wells (QWs) are inserted in to e-mode ITO/p-GaN gate HEMT structures and the desired wavelength of light spectrums are generated by changing the in content (mole fraction), to obtain inbuilt white light. Among five proposed structures one shows Maximum Id-max of 925 mA and maximum gm of 250 mS, which is significantly higher than any HEMT-LED structures reported before. All the proposed structures are simulated in Silvaco TCAD software.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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