一种基于finfet的低功耗静态随机存取存储单元

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-11-28 DOI:10.1002/jnm.70002

Gautam Rana, Ashish Sachdeva, M. Elangovan, Kulbhushan Sharma

{"title":"一种基于finfet的低功耗静态随机存取存储单元","authors":"Gautam Rana, Ashish Sachdeva, M. Elangovan, Kulbhushan Sharma","doi":"10.1002/jnm.70002","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This work presents a FinFET-based stable, and low-power consuming static random access memory (SRAM) bit-cell that used eight transistors. The performance parameter of proposed feedback-cutting 8T (FC8T) is compared with four pre-published cell circuits, i.e., 6T, read-decoupled 8T(8TRD), Schmitt-trigger based 10T (10TST), and Schmitt-trigger-based modified 10 T (10TMST). The write power in proposed design is reduced by 1.36×/1.32×/1.88×/1.47× compared to 6T/8TRD/10TST/10TMST cells. The write and read stability of proposed design is improved by 1.15×/1.86×/1.28×/1.148× and 2.27×/1×/1.57×/1.11×, respectively. The proposed design also shows the low variability compared to other SRAM bit-cells.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A FinFET-Based Low-Power Static Random Access Memory Cell With Improved Stability\",\"authors\":\"Gautam Rana, Ashish Sachdeva, M. Elangovan, Kulbhushan Sharma\",\"doi\":\"10.1002/jnm.70002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>This work presents a FinFET-based stable, and low-power consuming static random access memory (SRAM) bit-cell that used eight transistors. The performance parameter of proposed feedback-cutting 8T (FC8T) is compared with four pre-published cell circuits, i.e., 6T, read-decoupled 8T(8TRD), Schmitt-trigger based 10T (10TST), and Schmitt-trigger-based modified 10 T (10TMST). The write power in proposed design is reduced by 1.36×/1.32×/1.88×/1.47× compared to 6T/8TRD/10TST/10TMST cells. The write and read stability of proposed design is improved by 1.15×/1.86×/1.28×/1.148× and 2.27×/1×/1.57×/1.11×, respectively. The proposed design also shows the low variability compared to other SRAM bit-cells.</p>\\n </div>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"37 6\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70002\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70002","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

这项工作提出了一个基于finfet的稳定，低功耗的静态随机存取存储器（SRAM）位单元，使用8个晶体管。将提出的反馈切割8T（FC8T）的性能参数与四种预发布的单元电路，即6T、读解耦8T（8TRD）、基于施密特触发器的10T （10TST）和基于施密特触发器的改进10T （10TMST）进行了比较。与6T/8TRD/10TST/10TMST单元相比，本设计的写入功率降低了1.36×/1.32×/1.88×/1.47×。所提设计的写入和读取稳定性分别提高了1.15×/1.86×/1.28×/1.148×和2.27×/1×/1.57×/1.11×。与其他SRAM位单元相比，所提出的设计还显示出低可变性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A FinFET-Based Low-Power Static Random Access Memory Cell With Improved Stability

This work presents a FinFET-based stable, and low-power consuming static random access memory (SRAM) bit-cell that used eight transistors. The performance parameter of proposed feedback-cutting 8T (FC8T) is compared with four pre-published cell circuits, i.e., 6T, read-decoupled 8T(8TRD), Schmitt-trigger based 10T (10TST), and Schmitt-trigger-based modified 10 T (10TMST). The write power in proposed design is reduced by 1.36×/1.32×/1.88×/1.47× compared to 6T/8TRD/10TST/10TMST cells. The write and read stability of proposed design is improved by 1.15×/1.86×/1.28×/1.148× and 2.27×/1×/1.57×/1.11×, respectively. The proposed design also shows the low variability compared to other SRAM bit-cells.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.