Temperature-Insensitive On-Chip Resistors for Linear Voltage-To-Current Conversion in Low-Power Voltage and Current References

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-06 DOI:10.1002/jnm.70019

Hamed Aminzadeh, Mohammadreza Rasekhi, Mohammad Danaie

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引用次数: 0

Abstract

On-chip resistors are susceptible to temperature variations, affecting the performance of linear voltage-to-current (VI) conversion and vice versa. This paper introduces an approach to implement resistive networks that are highly immune to temperature variations across a wide range by combining complementary-to-absolute-temperature (CTAT) and proportional-to-absolute-temperature (PTAT) resistors existing in standard CMOS technology. The proposed resistive networks, aiming for linear VI conversion in voltage and current references (VCRs), yield ultra-low temperature coefficient (TC). Optimization is carried out using a multi-objective heuristic algorithm to find the optimal placement, TC and sizes of the elements within the final configuration. Post-layout simulation results in a standard 0.18-μm CMOS process demonstrate the possibility of implementing sub-3 ppm/°C resistors across −40 ~ 120°C temperature range, improving the prior art by more than 5×. A modern VCR configuration is implemented based on the proposed methodology, and simulation results verify the effectiveness of the modified approach in improving the accuracy of VI conversion.

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在低功率电压和电流参考中用于线性电压-电流转换的温度不敏感片上电阻

片上电阻易受温度变化的影响，影响线性电压-电流（VI）转换的性能，反之亦然。本文介绍了一种通过结合标准CMOS技术中存在的互补绝对温度（CTAT）和比例绝对温度（PTAT）电阻来实现在大范围内对温度变化高度免疫的电阻网络的方法。所提出的电阻网络，针对电压和电流基准（vcr）的线性VI转换，产生超低温系数（TC）。使用多目标启发式算法进行优化，以找到最终配置中元素的最佳位置，TC和大小。在标准0.18 μm CMOS工艺上的布局后仿真结果表明，在- 40 ~ 120°C温度范围内实现低于3 ppm/°C电阻的可能性，将现有技术提高了5倍以上。基于该方法实现了一种现代VCR结构，仿真结果验证了改进方法在提高VI转换精度方面的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.