Enhancing FeFET Structures for Non-Volatile On-Chip Memories: Design and Comparative Analysis

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-12-04 DOI:10.1002/jnm.70004

Mandeep Singh, Tarun Chaudhary, Balwinder Raj

{"title":"Enhancing FeFET Structures for Non-Volatile On-Chip Memories: Design and Comparative Analysis","authors":"Mandeep Singh, Tarun Chaudhary, Balwinder Raj","doi":"10.1002/jnm.70004","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>FeFET architectures for non-volatile on-chip memory are designed and compared in this investigation study. Because of its inherent non-volatile properties and low power requirements, FeFETs are attracting a lot of interest as prospective candidates for future memory technology. The aim of this paper is to investigate several FeFET designs and assess how well they function in terms of important factors including durability, retention, speed, and endurance. Using device simulations and experimental data, a number of FeFET architectures, such as MFS, MFIS, MFMIS, and MF-ABO<sub>3</sub>, are analyzed and contrasted. Comparative study gives light on the advantages and disadvantages of various FeFET architectures; improving our comprehension of how well-suited they are for non-volatile on-chip memory. This work will contribute to the improvement of FeFET devices for upcoming integrated circuits and progress the development of sophisticated FeFET-based memory techniques.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70004","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

FeFET architectures for non-volatile on-chip memory are designed and compared in this investigation study. Because of its inherent non-volatile properties and low power requirements, FeFETs are attracting a lot of interest as prospective candidates for future memory technology. The aim of this paper is to investigate several FeFET designs and assess how well they function in terms of important factors including durability, retention, speed, and endurance. Using device simulations and experimental data, a number of FeFET architectures, such as MFS, MFIS, MFMIS, and MF-ABO₃, are analyzed and contrasted. Comparative study gives light on the advantages and disadvantages of various FeFET architectures; improving our comprehension of how well-suited they are for non-volatile on-chip memory. This work will contribute to the improvement of FeFET devices for upcoming integrated circuits and progress the development of sophisticated FeFET-based memory techniques.

查看原文本刊更多论文

增强非易失性片上存储器的ffet结构：设计与比较分析

本研究设计并比较了非易失性片上存储器的效应场效应晶体管结构。由于其固有的非易失性和低功耗要求，fefet作为未来存储技术的潜在候选者吸引了很多人的兴趣。本文的目的是研究几种FeFET设计，并评估它们在耐用性、保持性、速度和耐用性等重要因素方面的功能。利用器件仿真和实验数据，对MFS、MFIS、MFMIS和MF-ABO3等几种ffet结构进行了分析和对比。比较研究揭示了各种ffet结构的优缺点；提高我们对它们如何适合非易失性片上存储器的理解。这项工作将有助于未来集成电路中ffet器件的改进，并推动基于ffet的复杂存储技术的发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.