International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"An Analytical Subthreshold I–V Model of SiC Double Gate JFETs","authors":"Yi Li,&nbsp;Tao Zhou,&nbsp;Zixuan Guo,&nbsp;Yuqiu Yang,&nbsp;Junyao Wu,&nbsp;Huan Cai,&nbsp;Jun Wang,&nbsp;Jungang Yin,&nbsp;Qin Liu,&nbsp;Linfeng Deng","doi":"10.1002/jnm.70008","DOIUrl":"https://doi.org/10.1002/jnm.70008","url":null,"abstract":"<div>\u0000 \u0000 <p>SiC double gate (DG) junction field effect transistor (JFET) is promising for low-noise and high-temperature electronics. Existing studies indicate that JFETs can be considered a special case of MOSFETs when the oxide layer thickness approaches zero. In this article, we exploited the structural similarity between the DG JFETs and the DG MOSFETs. By obtaining the 2D Poisson's equation for the DG MOSFETs and deriving the limits, we developed a model for calculating the channel current of SiC DG JFETs in the subthreshold region. The model is derived from device physics, requiring no fitting parameters and offering relatively low computational complexity. The results indicate that, whether for enhancement mode or depletion mode JFETs, the calculated values of this model are in good agreement with the 2D numerical analysis results obtained from Silvaco Atlas. Moreover, for enhancement mode JFETs, even when significant short-channel effects occur, the subthreshold current can still be well predicted. In addition, the model displays predictive capability for the depletion-mode JFETs.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of High-Performance Schottky Barrier β-Ga2O3 MOSFET With Enhanced Drain Current, Breakdown Voltage, and PFOM","authors":"Md Zafar Alam,&nbsp;Imran Ahmed Khan,&nbsp;S. Intekhab Amin,&nbsp;Aadil Anam,&nbsp;Mirza Tariq Beg","doi":"10.1002/jnm.70009","DOIUrl":"https://doi.org/10.1002/jnm.70009","url":null,"abstract":"<div>\u0000 \u0000 <p>In this article, a Schottky barrier β-Ga₂O₃ MOSFET is proposed. It shows improvements in drain saturation current, <i>I</i>_on/<i>I</i>_off ratio, transconductance, and off-state breakdown voltage. The proposed design, which implements the Schottky barrier source and drain contacts, has led to reduced on-state resistance (<i>R</i>_on), reduced forward voltage drops, faster switching speed, higher frequency, and improved efficiency. After device optimization, we determined that a source and drain having a work function of 3.90 eV result in the highest drain saturation current of (<i>I</i>_ds) 264 mA. Additionally, in the transfer characteristics, we demonstrate that increasing the channel doping concentration led to a shift toward depletion mode operation, while decreasing the doping concentration moved the device toward enhancement mode at the cost of drain current. Analysis of lattice temperature and self-heating effects on different substrates has also been performed. Furthermore, introducing a passivation layer of SiO₂ as a gate oxide and an unintentionally doped (UID) layer of 400 nm doping concentration of 1.5 × 10¹⁵ cm⁻³, results in further significant improvements in the drain saturation current (<i>I</i>_ds) of 624 mA and transconductance of 38.09 mS, approximately doubling their values compared with the device without a passivation layer of SiO₂ and an <i>I</i>_on/<i>I</i>_off ratio of 10¹⁵, and the device's performance at various substrate temperatures has been evaluated. In addition, the inclusion of a passivation layer of SiO₂ improves the breakdown voltage to 2385 V, which is significantly high compared with the conventional device. Moreover, the lower specific-on-resistance <i>R</i>_on,sp of 7.6 mΩ/cm² and higher breakdown voltage then the high-power figure of merit (PFOM) (BV²/<i>R</i>_on,sp) of 748 MW/cm² have been achieved.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Optimization of Multilayered Microwave Absorber Structures for X-Band Frequencies: Application on Composite Materials Comprising Ceramic, Polyaniline/Magnetite, and Carbon Nanotubes","authors":"Benzaoui Karim,&nbsp;Ales Achour,&nbsp;Medjaouri Youcef Amin,&nbsp;Zaoui Abdelhalim","doi":"10.1002/jnm.70006","DOIUrl":"https://doi.org/10.1002/jnm.70006","url":null,"abstract":"<div>\u0000 \u0000 <p>The characteristics of multilayered microwave absorbing materials are very efficient compared with those of single layer. In this article, a hybrid optimization algorithm (genetic algorithm + pattern search) combined with transmission line matrix method has been presented. The selection of parameters, including the arrangement of layers, thickness of layers, absorption index, and shielding efficiency, forms the foundation of this process. The optimization algorithm was applied to two new multilayered structures. The first structure consists of conductive layers (CLs) of carbon nanotube (CNT) with ceramic layers of zirconium dioxide <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mfenced>\u0000 <msub>\u0000 <mi>ZrO</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mfenced>\u0000 </mrow>\u0000 <annotation>$$ left({mathrm{ZrO}}_2right) $$</annotation>\u0000 </semantics></math>. The second structure includes CLs of CNT with layers based on magnetite polyaniline nanomaterial (PANI_<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>Fe</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>O</mi>\u0000 <mn>4</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {mathrm{Fe}}_3{mathrm{O}}_4 $$</annotation>\u0000 </semantics></math>). Performances of both structures were evaluated in the X-band frequency range. Simulation results showed that both designs have higher absorption index picks (&gt; 90%) and, low <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>S</mi>\u0000 <mn>11</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {S}_{11} $$</annotation>\u0000 </semantics></math> magnitude value with low layer thickness. This approach offers a solid foundation for future experimental trials in the development of efficient microwave absorbing and shielding structures with tunable electromagnetic performances suitable for X-band applications.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of Microstrip Line Fed Gap Coupled Triple Band Slotted Patch Antenna for WiMAX, WLAN, and Sub-6 GHz 5G Applications","authors":"Ramesh Kumar Verma,&nbsp;Vikram Bali,&nbsp;Akhilesh Kumar,&nbsp;Prabina Pattanayak,&nbsp;Ravi Kant Prasad,&nbsp;Maninder Singh","doi":"10.1002/jnm.70005","DOIUrl":"https://doi.org/10.1002/jnm.70005","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents a gap coupled triple band slot loaded microstrip patch antenna with parasitic patches. It consist inverted U-shape and inverted T-shape open-ended slots along with a rectangular slot at center of patch. The inverted U-shape open-ended slot generates a driven patch at bottom side and an inverted U-shape parasitic patch at middle side of patch while inverted T-shape open-ended slot generates two rectangular shape parasitic patches of same dimension at top side of patch. The proposed gap coupled antenna covers 2.29 to 2.77 GHz in first band, 3.25 to 3.65 GHz in second band and 4.67 to 5.72 GHz in third band with return losses of −23.2, −19.90, and −38.06 dB, respectively. The proposed antenna resonates at 2.57, 3.48, and 5.37 GHz with fractional bandwidth of 18.97% (480 MHz), 11.59% (400 MHz), and 20.21% (1050 MHz), respectively. The return loss and bandwidth of presented antenna is increases gradually by loading inverted U-shape and inverted T-shape open-ended slots along with a rectangular slot in antenna patch. The proposed antenna exhibits stable peak gain of 4.45, 4.81, and 5.26 dBi and efficiency of 89.5%, 89%, and 90% in three resonating bands. The antenna resonating bands are applicable for WiMAX: 2.5/3.5/5.5 GHz (2.5–2.69, 3.4–3.69, and 5.25–5.85 GHz), WLAN: 2.4/5.2 GHz (2.4–2.484 and 5.15–5.35 GHz) and sub-6 GHz 5G: 3.5 GHz (3.3–3.8 GHz). The size of antenna is 40 mm × 50 mm (0.34 × <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msubsup>\u0000 <mrow>\u0000 <mn>0.43</mn>\u0000 <mi>λ</mi>\u0000 </mrow>\u0000 <mn>0</mn>\u0000 <mn>2</mn>\u0000 </msubsup>\u0000 </mrow>\u0000 <annotation>$$ 0.43{lambda}_0^2 $$</annotation>\u0000 </semantics></math> at frequency 2.57 GHz). The gap coupled antenna geometry is fed by microstrip line feed and simulated by IE3D simulation tool.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142860958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing FeFET Structures for Non-Volatile On-Chip Memories: Design and Comparative Analysis","authors":"Mandeep Singh,&nbsp;Tarun Chaudhary,&nbsp;Balwinder Raj","doi":"10.1002/jnm.70004","DOIUrl":"https://doi.org/10.1002/jnm.70004","url":null,"abstract":"<div>\u0000 \u0000 <p>FeFET architectures for non-volatile on-chip memory are designed and compared in this investigation study. Because of its inherent non-volatile properties and low power requirements, FeFETs are attracting a lot of interest as prospective candidates for future memory technology. The aim of this paper is to investigate several FeFET designs and assess how well they function in terms of important factors including durability, retention, speed, and endurance. Using device simulations and experimental data, a number of FeFET architectures, such as MFS, MFIS, MFMIS, and MF-ABO₃, are analyzed and contrasted. Comparative study gives light on the advantages and disadvantages of various FeFET architectures; improving our comprehension of how well-suited they are for non-volatile on-chip memory. This work will contribute to the improvement of FeFET devices for upcoming integrated circuits and progress the development of sophisticated FeFET-based memory techniques.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SG-FET Based Spiking Neuron With Ultra-Low Energy Consumption for ECG Signal Classification","authors":"Babar M. Zargar,&nbsp;Mudasir A. Khanday,&nbsp;Farooq A. Khanday","doi":"10.1002/jnm.70003","DOIUrl":"https://doi.org/10.1002/jnm.70003","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents an energy-efficient single-transistor leaky integrate-and-fire neuron, based on Suspended Gate-FET (SG-FET), for signal classification and neuromorphic computing applications. By leveraging the SG-FET model, extensive simulations were conducted to demonstrate the device's remarkable neuronal ability. The device faithfully emulated the intricate behaviour of biological neurons, without the need for external circuitry. One of the standout achievements lies in the device's astonishingly low energy consumption of 94.5 aJ per spike. Therefore, it outperforms the previously proposed one-transistor (1-T) neurons, which makes it a potential candidate for energy-efficient neuromorphic computing. To verify the practical viability of the device, an emulation was seamlessly integrated into a spiking neural network framework, allowing for real-time signal classification. In this specific case, the device excelled in the classification of electrocardiogram (ECG) signals, achieving an impressive accuracy rate of 85.6%. This outcome highlights the device's efficacy in handling real-world signal processing tasks with remarkable precision and efficiency.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A FinFET-Based Low-Power Static Random Access Memory Cell With Improved Stability","authors":"Gautam Rana,&nbsp;Ashish Sachdeva,&nbsp;M. Elangovan,&nbsp;Kulbhushan Sharma","doi":"10.1002/jnm.70002","DOIUrl":"https://doi.org/10.1002/jnm.70002","url":null,"abstract":"<div>\u0000 \u0000 <p>This work presents a FinFET-based stable, and low-power consuming static random access memory (SRAM) bit-cell that used eight transistors. The performance parameter of proposed feedback-cutting 8T (FC8T) is compared with four pre-published cell circuits, i.e., 6T, read-decoupled 8T(8TRD), Schmitt-trigger based 10T (10TST), and Schmitt-trigger-based modified 10 T (10TMST). The write power in proposed design is reduced by 1.36×/1.32×/1.88×/1.47× compared to 6T/8TRD/10TST/10TMST cells. The write and read stability of proposed design is improved by 1.15×/1.86×/1.28×/1.148× and 2.27×/1×/1.57×/1.11×, respectively. The proposed design also shows the low variability compared to other SRAM bit-cells.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142749190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Accelerated Characteristic Mode Calculation for PEC Objects Using ACA-QR-SVD Algorithm","authors":"Pengfei Zhang,&nbsp;Shaode Huang,&nbsp;Jiejun Zhang,&nbsp;Jianhua Zhou,&nbsp;Tao Hong","doi":"10.1002/jnm.3313","DOIUrl":"https://doi.org/10.1002/jnm.3313","url":null,"abstract":"<div>\u0000 \u0000 <p>Characteristic mode (CM) analysis serves as a powerful tool for evaluating the radiation and scattering characteristics of objects. CM formulations within the method of moments (MoM) framework are widely favored due to their ability to offer clear physical insights, handle complex shapes, and facilitate straightforward implementation. However, MoM-based CM formulations become inefficient when applied to electrically large objects due to the dense matrices involved. This article introduces a novel approach using a fast low-rank decomposition-based implicitly restarted Arnoldi method (IRAM) to accelerate CM computations. The adaptive cross approximation (ACA) and QR-SVD algorithms are employed to efficiently compute the low-rank decomposition of matrices. The ACA-QR-SVD algorithm offers advantages in matrix filling, LU factorization, and matrix–vector multiplication processes, thereby enhancing efficiency. Numerical simulations on two representative objects demonstrate that the proposed algorithm notably improves computational speed and reduces memory requirements while maintaining high computational accuracy.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Performance of Dual Material Double Gate Negative Capacitance Tunnel Field Effect Transistor (DMDG-NC-TFET) via HZO Ferroelectric Integration for Improved Drain Current and Subthreshold Swing","authors":"P. Hannah Blessy,&nbsp;A. Shenbagavalli,&nbsp;T. S. Arun Samuel,&nbsp;J. Charles Pravin","doi":"10.1002/jnm.70001","DOIUrl":"https://doi.org/10.1002/jnm.70001","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper developed the novel structure of a dual material double gate negative capacitance tunnel field effect transistor (DMDG-NC-TFET) using HZO ferroelectric material. This study systematically improved the drain current and subthreshold swing (SS) by inducing a negative capacitance effect in a gate stack. The proposed gate oxide structure is a stack configuration of ferroelectric material, and high-k dielectric to improve gate control. The Landau–Khalatnikov (LK) equation is used to solve the Poisson equation and get an accurate estimate of the channel potential. Kane's model is used for band-to-band generation rate calculation. For modelling the drain current, the band-to-band tunnelling (G_btbt) generation rate is integrated using the entire device volume. The impact of varying ferroelectric thickness in the proposed structure has been investigated with the simulated results. The outcomes demonstrate that the device can obtain better improvements in ON current and SS, compared to conventional DMDG-TFET. By contrasting the analytical results with the outcomes of the TCAD simulation, the effectiveness of the proposed methodology has been demonstrated.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"EEG Emotion Recognition Based on GADF and AMB-CNN Model","authors":"Qian Zhao,&nbsp;Dandan Zhao,&nbsp;Wuliang Yin","doi":"10.1002/jnm.70000","DOIUrl":"10.1002/jnm.70000","url":null,"abstract":"<div>\u0000 \u0000 <p>Deep learning has achieved better results in natural language processing, computer vision, and other fields. Nowadays, more deep learning algorithms have also been applied in brain-based emotion recognition. In the studies on brain-based emotion recognition, deep learning models typically use one-dimensional time series as the input and cannot fully leverage the advantages of the models in image classification or recognition. To address this issue, based on the publicly available SEED and DEAP datasets, the Gramian angular difference field (GADF) method was proposed to construct two-dimensional image representation datasets: SEED-GADF and DEAP-GADF datasets, in the paper. Additionally, a convolutional attention mechanism model (AMB-CNN) was introduced and its classification performance was validated on SEED-GADF and DEAP-GADF datasets. AMB-CNN achieved an average accuracy of 90.8%, a recall rate of 90%, and AUC of 96.86% on SEED-GADF. On DEAP-GADF, the average accuracy, recall rate, and AUC respectively reached 96.06%, 96.06%, and 98.58% in the valence dimension and 96.11%, 96.11%, and 98.73% in the arousal dimension. Finally, the comparison results with various algorithms and ablation experiments proved the superiority of the proposed model.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}