International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Static Approximate Modified Mirror—Full Adder for High Speed and Low Power Operations Using 32 nm CNTFET Technology","authors":"Sagar Juneja,&nbsp;M. Elangovan,&nbsp;Kulbhushan Sharma","doi":"10.1002/jnm.3320","DOIUrl":"https://doi.org/10.1002/jnm.3320","url":null,"abstract":"<div>\u0000 \u0000 <p>The error tolerance nature of the digital multimedia applications enables the implementation of approximate digital circuits to achieve the benefits of high speed of operation and low power consumption. This paper proposes a static approximate modified mirror full adder (SAMM-FA) circuit designed using logic level approximation to reduce the number of transistors in the circuit. Owing to the balanced electrical characteristics, better stability and higher on-current to off-current ratio (<i>I</i>_on/<i>I</i>_off), 32 nm carbon nanotube field effect transistor (CNTFET) technology has been used for implementing the proposed circuit in the Cadence Virtuoso tool. Featuring only 10 transistors and operating at a supply voltage of 0.5 V, the proposed SAMM-FA has a low power dissipation of just 4.14 nW, and propagation delay of just 3.82 ps. The power delay product and energy delay product figure of merits of the proposed circuit are found to be excellent when compared with the contemporary designs.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Explicit Commutativity for Lamé Linear Time-Varying Differential Systems","authors":"Salisu Ibrahim,&nbsp;Salah Boulaaras,&nbsp;Abedallah Rababah,&nbsp;Mujahid Iqbal","doi":"10.1002/jnm.3309","DOIUrl":"https://doi.org/10.1002/jnm.3309","url":null,"abstract":"<div>\u0000 \u0000 <p>This article studies the commutativity and sensitivity of the Lamé linear time-varying systems (LTVSs), and investigates the effects of disturbances on such systems. The commutative pair for the Lamé LTVS <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>A</mi>\u0000 </mrow>\u0000 <annotation>$$ A $$</annotation>\u0000 </semantics></math> of order <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 <annotation>$$ 2 $$</annotation>\u0000 </semantics></math> is found, that is, a new Lamé LTVS <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>B</mi>\u0000 </mrow>\u0000 <annotation>$$ B $$</annotation>\u0000 </semantics></math> of order <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>m</mi>\u0000 <mo>≤</mo>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 <annotation>$$ mle 2 $$</annotation>\u0000 </semantics></math> is derived using the explicit commutative theories for zero initial conditions (ICs). For the case of nonzero ICs, the commutativity between the connected input–output of Lamé systems <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>AB</mi>\u0000 </mrow>\u0000 <annotation>$$ AB $$</annotation>\u0000 </semantics></math> and <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>BA</mi>\u0000 </mrow>\u0000 <annotation>$$ BA $$</annotation>\u0000 </semantics></math> is studied. New and simple explicit commutative theories and conditions for second-order LTVSs are derived, simplifying the use of commutativity for practical and industrial scenarios. These findings enable us to analyse the commutativity, sensitivity, robustness and stability of Lamé systems, and to determine the effects of disturbances. The explicit results presented in this article are supported by simulations and verified by examples and constitute a significant contribution to science and engineering applications.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical Technique Based on Operational Matrices of Fractional Integration Using \u0000 \u0000 \u0000 ψ\u0000 \u0000 $$ psi $$\u0000 -Shifted Chebyshev Polynomials","authors":"Shazia Sadiq,&nbsp;Mujeeb ur Rehman","doi":"10.1002/jnm.3314","DOIUrl":"https://doi.org/10.1002/jnm.3314","url":null,"abstract":"<div>\u0000 \u0000 <p>In this paper, we present a numerical scheme based on a modified form of shifted Chebyshev polynomials to find the numerical solution of a class of fractional differential equations. For this purpose, we work out operational matrices of fractional integration of <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>ψ</mi>\u0000 </mrow>\u0000 <annotation>$$ psi $$</annotation>\u0000 </semantics></math>-shifted Chebyshev polynomials obtained from shifted Chebyshev polynomials. Finally, the solution to the problem under consideration is obtained by solving a system of algebraic equations that results from the use of operational matrices of integration. The analysis of integer and non-integer order differential equations is presented to show the convergence of the solution of fractional order differential equation to the corresponding solution of the integer order differential equation. At the end, we present some linear and non-linear examples to validate the theoretical analysis. Non-linear examples are solved using Quasilinearization and proposed numerical technique.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bifurcation and Controller Design of 5D BAM Neural Networks With Time Delay","authors":"Qingyi Cui,&nbsp;Changjin Xu,&nbsp;Yiya Xu,&nbsp;Wei Ou,&nbsp;Yicheng Pang,&nbsp;Zixin Liu,&nbsp;Jianwei Shen,&nbsp;Muhammad Zafarullah Baber,&nbsp;Chinnamuniyandi Maharajan,&nbsp;Uttam Ghosh","doi":"10.1002/jnm.3316","DOIUrl":"https://doi.org/10.1002/jnm.3316","url":null,"abstract":"<div>\u0000 \u0000 <p>All the time delayed dynamical system plays a vital role in describing the dynamical phenomenon of neural networks. In the current article, we study a class of 5D delayed bidirectional associative memory (BAM) neural networks that conform to objective reality. First of all, we prove that the solution of the delayed 5D BAM neural networks exists and is unique by virtue of fixed point theorem and some inequality techniques. Secondly, the Hopf bifurcation and stability of the delayed 5D BAM neural networks are investigated by exploiting the stability criterion and bifurcation theory. Once more, Hopf bifurcation control strategy of the delayed 5D BAM neural networks is explored by virtue of two different hybrid controllers. By adjusting the parameters of the controllers, we can control the stability domain and Hopf bifurcation onset. Eventually, the correctness of the theoretical results was verified through numerical simulations. The conclusions obtained in this paper are new and have important theoretical value in neural network area.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single Ended Read Decoupled High Stable 9T CNTFET SRAM for Low Power Applications","authors":"M. Elangovan,&nbsp;E. Akash,&nbsp;Mohammed El-Meligy,&nbsp;Mohamed Sharaf","doi":"10.1002/jnm.3318","DOIUrl":"https://doi.org/10.1002/jnm.3318","url":null,"abstract":"<div>\u0000 \u0000 <p>In wireless sensor networks, conserving power is vital for prolonging battery life. This research introduces a groundbreaking solution: a 9T carbon nanotube-field effect transistor (CNTFET) based SRAM cell (9T SRAM) designed to optimize power consumption and stability. Through meticulous analysis, the performance of this 9T SRAM cell is quantified. Power consumption metrics reveal impressive figures: the write, hold, read, and dynamic power are measured at 0.21 nW, 0.32 nW, 15.28 μW, and 8.09 μW, respectively. Furthermore, the Write SNM (WSNM), Hold SNM (HSNM), and Read SNM (RSNM) are found to be 380.11, 390.22, and 390.31 mV, respectively, indicating robust stability. The proposed bit cell has a write and read delay of 95.1 and 39.6 pS, respectively. Incorporating stacked transistors diminishes power consumption, while the decoupled read technique boosts the stability of the proposed bit cell. By comparing these results with existing SRAM cells, the superiority of the proposed 9T SRAM cell in terms of power efficiency becomes evident. Notably, it outperforms earlier models, making it an ideal candidate for integration into wireless sensor networks. These findings are supported by simulations conducted using HSPICE, alongside a 32 nm CNTFET model sourced from Stanford University.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Unstructured Mesh Coordinate Transformation-Based FDTD Method","authors":"Armando Albornoz-Basto,&nbsp;Bud Denny,&nbsp;Moysey Brio","doi":"10.1002/jnm.3307","DOIUrl":"https://doi.org/10.1002/jnm.3307","url":null,"abstract":"<div>\u0000 \u0000 <p>We propose a novel unstructured mesh finite-difference time-domain (FDTD) method for solving electromagnetics problems with complicated geometries. The method, which solves the TE-mode reduced form of Maxwell's equations, can handle both material interfaces and anisotropic material. Using the transformation optics principle, which describes how fields and material tensors change under coordinate transformations, we locally transform each cell in the mesh to a reference unit-square computational domain where the usual FDTD update is performed. This comes at a cost: employing unstructured grids and coordinate transformations requires more complicated data structures, a mesh orientation process, and potentially introduces an anisotropic material tensor at every mesh cell. Nonetheless, we find that the method maintains the same desirable properties of the classic FDTD method (explicit, divergence-free B-field, nondissapative, and second-order accuracy) while also gaining conforming material interfaces and boundaries in complicated geometry. Even further, we prove that the method is stable under a Courant condition and a fairly nonrestrictive mesh condition, hence defeating the late-time stability issue plaguing prior nonorthogonal FDTD methods. To verify the method, we conduct convergence studies on three electromagnetic cavity problems with known exact solutions. For these numerical studies, we find that the method maintains second-order convergence and stability.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Combination of Boundary Elements and the Ellipsoid Method for Optimizing the Electromagnetic Fields of Overhead Power Lines","authors":"B. A. M. Duane,&nbsp;M. M. Afonso,&nbsp;A. L. Paganotti,&nbsp;M. A. O. Schroeder,&nbsp;R. R. Saldanha","doi":"10.1002/jnm.3319","DOIUrl":"https://doi.org/10.1002/jnm.3319","url":null,"abstract":"<div>\u0000 \u0000 <p>This study proposes a numerical approach aimed at mitigating electromagnetic field intensities at ground level generated by overhead power lines. The methodology integrates the boundary element method for field evaluation with the ellipsoid method for field optimization, while adhering to critical design and safety constraints. The optimized power line configurations, derived from this integrated approach, achieved significant reductions in both electric and magnetic field magnitudes at ground level without compromising any specified constraints. Moreover, the research findings demonstrate the robustness, efficiency, and practical applicability of the proposed methodology in the design of optimized power lines, offering potential for increased power transfer capability, and decreased environmental and health impacts.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on Metallic Spheres Radius Classification Method Using Machine Learning With Eddy Current Testing","authors":"Huilin Zhang,&nbsp;Wenkai Li,&nbsp;Qian Zhao,&nbsp;Zihan Xia,&nbsp;Yuxin Shi,&nbsp;Wuliang Yin","doi":"10.1002/jnm.3317","DOIUrl":"https://doi.org/10.1002/jnm.3317","url":null,"abstract":"<div>\u0000 \u0000 <p>Metallic spheres play a crucial role in industry and their accurate measurement is essential to ensure the safety of industrial production. Eddy current testing (ECT), which is non-contact and non-invasive, provides an efficient and precise approach for the parameter evaluation of metallic spheres. In this paper, we utilize machine learning (ML) methods to invert inductive signals in order to address the inverse problem of ECT, with the aim of reconstructing the radius of a metallic sphere. Datasets containing the radius information of the metallic sphere were constructed based on the simplified analytical solution. The datasets were divided into two parts based on the real part (RP) and imaginary part (IP) features, and the connection between the two features and the radius of the metallic sphere were compared by five classification models. While achieving accurate classification of aluminum and stainless steel spheres with different radius, the models are evaluated to ensure the reliability and validity of the models. The results show that the use of IP data as a classification feature has better accuracy as compared to RP. The K nearest neighbor (KNN) radius classifier has the highest accuracy of 95.5% in aluminum spheres and the random forest (RF) radius classifier has the highest accuracy of 95.9% in stainless steel spheres. In addition, all five classifiers are able to overcome the effect of lift-off on the classification results.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Subthreshold Drain Current Model of Cylindrical Gate All-Around Junctionless Transistor With Three Different Gate Materials","authors":"S. Manikandan,&nbsp;P. Suveetha Dhanaselvam,&nbsp;M. Karthigai Pandian","doi":"10.1002/jnm.3312","DOIUrl":"https://doi.org/10.1002/jnm.3312","url":null,"abstract":"<div>\u0000 \u0000 <p>A novel subthreshold drain current model has been developed for a cylindrical gate all-around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectively reduce the short-channel effects caused by quantum mechanical effects. The drain current equation is solved for all three operating regions to investigate the device switching characteristics and minimize the drain-induced barrier lowering (DIBL), velocity saturation, mobility degradation, and tunneling. It is understood that the triple material gate structure enhances the transport efficiency of the device. The proposed analytical model is validated by comparison with Sentaurus TCAD numerical simulator results and good agreement is found to be achieved.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142525369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid TLM-CTLM Test Structure for Determining Specific Contact Resistivity of Ohmic Contacts","authors":"Pan Yue,&nbsp;Thanh Pham Chi,&nbsp;Anthony Holland","doi":"10.1002/jnm.3310","DOIUrl":"https://doi.org/10.1002/jnm.3310","url":null,"abstract":"<div>\u0000 \u0000 <p>Various test structures can be used to determine the specific contact resistivity of ohmic contacts. The transmission line model test structure and circular transmission line model test structure are the most commonly used. The analytical expressions of the former are straightforward and effectively describe the electrical behaviour of a contact, while the concentric geometry of the latter eliminates complications during fabrication. In this article, we present a hybrid test structure that combines the advantages of the transmission line and the circular transmission line models. The analytical expressions of the new structure are presented, and its finite-element modelling is undertaken. The effect of contact geometry on this test structure is also discussed. Using the presented test structure, determining contact parameters does not require any error corrections.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142525560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}