{"title":"一种三重复用Si/SiC异质结LDMOS及其分析模型","authors":"Nan Wang, Xiarong Hu, Yonggen Xu, Tianci Li","doi":"10.1002/jnm.70039","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>In this paper, a Triple RESURF Si/SiC HeteroJunction LDMOS (TR-HJ-LDMOS) structure is proposed. The TR-HJ-LDMOS features a P-type layer buried deep into the drift region. Compared with Double RESURF (DR) and Single RESURF (SR) Si/SiC HeteroJunction LDMOS (HJ-LDMOS), the drift depletion effect is strengthened. As a result, the drift doping concentration is increased, and the specific on-resistance (<i>R</i><sub>s,on</sub>) is decreased. The simulation results show that the <i>R</i><sub>s,on</sub> of the 300 V-class TR-HJ-LDMOS is 20mΩ·cm<sup>2</sup>, which is reduced by 28.6% and 50.0%, respectively, compared with DR-HJ-LDMOS and SR-HJ-LDMOS. Moreover, an analytical model for the electric field distributions of the Triple RESURF Si/SiC HeteroJunction LDMOS is proposed in this paper. The analytical expressions of the surface field and potential distributions are presented. The effect of the P-layer concentration, thickness, position, as well as the drain depth and drift thickness on the electric field distributions of the TR-HJ-LDMOS are discussed in detail. The proposed model can also be applied in the SR and DR HJ-LDMOS.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Triple RESURF Si/SiC HeteroJunction LDMOS and Its Analytical Model\",\"authors\":\"Nan Wang, Xiarong Hu, Yonggen Xu, Tianci Li\",\"doi\":\"10.1002/jnm.70039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>In this paper, a Triple RESURF Si/SiC HeteroJunction LDMOS (TR-HJ-LDMOS) structure is proposed. The TR-HJ-LDMOS features a P-type layer buried deep into the drift region. Compared with Double RESURF (DR) and Single RESURF (SR) Si/SiC HeteroJunction LDMOS (HJ-LDMOS), the drift depletion effect is strengthened. As a result, the drift doping concentration is increased, and the specific on-resistance (<i>R</i><sub>s,on</sub>) is decreased. The simulation results show that the <i>R</i><sub>s,on</sub> of the 300 V-class TR-HJ-LDMOS is 20mΩ·cm<sup>2</sup>, which is reduced by 28.6% and 50.0%, respectively, compared with DR-HJ-LDMOS and SR-HJ-LDMOS. Moreover, an analytical model for the electric field distributions of the Triple RESURF Si/SiC HeteroJunction LDMOS is proposed in this paper. The analytical expressions of the surface field and potential distributions are presented. The effect of the P-layer concentration, thickness, position, as well as the drain depth and drift thickness on the electric field distributions of the TR-HJ-LDMOS are discussed in detail. The proposed model can also be applied in the SR and DR HJ-LDMOS.</p>\\n </div>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"38 2\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70039\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70039","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Triple RESURF Si/SiC HeteroJunction LDMOS and Its Analytical Model
In this paper, a Triple RESURF Si/SiC HeteroJunction LDMOS (TR-HJ-LDMOS) structure is proposed. The TR-HJ-LDMOS features a P-type layer buried deep into the drift region. Compared with Double RESURF (DR) and Single RESURF (SR) Si/SiC HeteroJunction LDMOS (HJ-LDMOS), the drift depletion effect is strengthened. As a result, the drift doping concentration is increased, and the specific on-resistance (Rs,on) is decreased. The simulation results show that the Rs,on of the 300 V-class TR-HJ-LDMOS is 20mΩ·cm2, which is reduced by 28.6% and 50.0%, respectively, compared with DR-HJ-LDMOS and SR-HJ-LDMOS. Moreover, an analytical model for the electric field distributions of the Triple RESURF Si/SiC HeteroJunction LDMOS is proposed in this paper. The analytical expressions of the surface field and potential distributions are presented. The effect of the P-layer concentration, thickness, position, as well as the drain depth and drift thickness on the electric field distributions of the TR-HJ-LDMOS are discussed in detail. The proposed model can also be applied in the SR and DR HJ-LDMOS.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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