International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

{"title":"Low-Frequency Noise Analysis of GSCG Double-Gate MOSFET in the Subthreshold Region","authors":"Srikrishna Bardhan,&nbsp;Pradipta Kumar Jena,&nbsp;Sarita Misra,&nbsp;Sanghamitra Das,&nbsp;Sudhansu Kumar Pati","doi":"10.1002/jnm.70025","DOIUrl":"https://doi.org/10.1002/jnm.70025","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents the noise analysis of double-gate MOSFETs with gate stacking and channel grading (GSCG). In particular, the low-frequency noise, flicker noise, or thermal noise power spectral densities are presented by varying different geometrical parameters of the device, such as the length and thickness of the channel (<i>L</i> and <i>t</i>_si, respectively), and the thickness of the gate-oxide and high-<i>k</i> insulating material (<i>t</i>₁ and <i>t</i>₂, respectively) in the subthreshold region. Prior to developing the mathematical formulations for flicker noise and thermal noise PSDs, we first propose the analytical models for drain current and inversion charge density. Published experimental results are used to validate the drain current model and flicker noise model (both normalized and unnormalized). The results obtained from the model show excellent matching with the experimental data. Our findings show that the effect of flicker noise decreases as the operating frequency increases. Owing to the reduced carrier mobility in the conducting channel and carrier scattering at the oxide–semiconductor interfaces of the proposed device, the device's performance can be enhanced by lowering the flicker noise level as the channel length and the thicknesses of both insulating materials (SiO₂ and HfO₂) increase. Similarly, the thermal noise PSD can be reduced by increasing the channel thickness. Our proposed device's flicker and thermal noise study in the subthreshold region points to a possible contender that can be employed for both analog/RF applications and a wide range of frequencies.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical Simulation and Investigation of Nanoscale Organic Field-Effect Transistor With Varying Channel Thickness","authors":"Yogesh Thakur,&nbsp;Mamta Khosla,&nbsp;Balwinder Raj","doi":"10.1002/jnm.70020","DOIUrl":"https://doi.org/10.1002/jnm.70020","url":null,"abstract":"<div>\u0000 \u0000 <p>Specific characteristics of organic field-effect transistors (OFETs), including channel thickness, ON-current, OFF-current, SS, threshold voltage, and turn-on voltage, are influenced by the fabrication process. The design and realization of circuits based on OFETs demand their expertise and oversight. An OFET with palladium (Pd) source/drain (S/D) electrodes, NdTaNO as dielectric material, pentacene as the active layer, and the aluminum gate electrode is simulated using Silvaco TCAD. The device's performance parameters, such as drain current, threshold voltage, current on/off ratio, transconductance, and subthreshold slope, are analyzed for varying channel thickness from 10 to 100 nm. Overall improvement in <i>I</i>_ON and <i>V</i>_TH is observed with a decrease in <i>t</i>_ch value. Various fabrication factors, including the management of dewetting issues, tensile strain, and compressive stress in OSC films, which are closely related to the channel thickness of the device, require careful consideration to effectively prolong the operational lifespan of OFET devices. These issues primarily arise when the thickness of the OSC is either extremely minimal or excessively large. Such extremes can result in a reduced lifespan of the device and may compromise the overall performance of the circuit. Therefore, in the analysis presented in this paper, it was discovered that the optimal device conditions and satisfactory operational behavior are achieved at thickness (<i>t</i>_ch) values of 60 and 50 nm. These values meet the optimal <i>t</i>_ch requirement for OFET fabrication.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143121101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surrogate Modeling for Drive Co-Simulation Including Local Irreversible Demagnetization Knowledge","authors":"T. Henneron,&nbsp;J. Tomezyk,&nbsp;E. Semail","doi":"10.1002/jnm.70021","DOIUrl":"https://doi.org/10.1002/jnm.70021","url":null,"abstract":"<p>In order to survey possible local demagnetization of permanent magnet drives during transient operations and/or faulty functioning in case of multi-phase drives, co-simulation including converter, vector control, and finite element model could be investigated. Nevertheless, expensive simulation time limits practically this solution. To solve this problem, the paper proposes a surrogate model of an electrical machine taking into account locally the irreversible demagnetization effect. In case of a multi-phase machine working in transient operations and irreversible demagnetization, the proposed surrogate model gives large benefit in computational time in comparison with an finite element approach.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70021","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143120183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrating Transfer Learning and GPU Acceleration in MMIC Design: A Neural Network Approach for a 6–13 GHz LNA","authors":"Yifan Wu,&nbsp;Junchao Wang,&nbsp;Jiayu Chen,&nbsp;Bin You,&nbsp;Jun Liu","doi":"10.1002/jnm.70022","DOIUrl":"https://doi.org/10.1002/jnm.70022","url":null,"abstract":"<div>\u0000 \u0000 <p>The design of monolithic microwave integrated circuits (MMICs) is a laborious process that involves exploring a vast design space, requiring multiple iterations to identify the optimal circuit design. In this research, we propose a design approach that combines GPU-based high-performance computing and transfer learning techniques. To improve modularity and reusability, we decompose the MMIC into multiple substructures and then combine these substructures to restore the overall circuit structure and performance. To achieve this, we adopted schematic simulation, which is more time-efficient, to construct a data set and pre-train the circuit substructure models. We then fine-tune the pre-trained models using a limited amount of electromagnetic (EM) simulation data, aiming to obtain layout-level subcircuit models. Leveraging the parallel processing capabilities of neural network models, we employ GPU to conduct extensive exploration and design within the circuit design space, utilizing cascade connection theory to optimize the performance of the complete circuit. We apply this methodology to a low-noise amplifier (LNA) circuit operating in the 6–13 GHz frequency range, achieving favorable outcomes.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143120009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fractal Performance Under Magnetization Procedures of Fractional Memristive Wilson Neuron Dynamical Model","authors":"Kashif Ali Abro,&nbsp;Ibrahim Mahariq","doi":"10.1002/jnm.70016","DOIUrl":"https://doi.org/10.1002/jnm.70016","url":null,"abstract":"<div>\u0000 \u0000 <p>The non-integer neuron dynamical models are feasible for accurate prediction and perfect estimation of magnetization and de-magnetization in complicated physiological environments within reliable fractal-fractional neuronal modeling. The memristive Wilson neuron model is proposed under the comparative performance of two types of fractal-fractional differentials with two different types of kernels based on two different memories. The non-classical memristive Wilson neuron model with and without magnetization is simulated for numerical schemes by means of linear multi-step integration method. The numerical simulations are traced out by discretizing continuum processes of spatial and time domains for the sake of perfect approximations under singular and non-singular kernel versus local and non-local kernel. By applying the powerful methodology of fractal-fractional differential and integral operators on the memristive Wilson neuron model, the antimonotonicity phenomenon and asymmetric coexisting electrical activities have been explored intensively to widen the neuron-based engineering applications. Remarkably, our results based on magnetization and de-magnetization procedures of Wilson neuron model have imitated the neuron activities under electrophysiological environment.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive Electrothermal Characterization Analysis for Scaled Nanochannels in Gate-All-Around Field-Effect Transistors","authors":"Ziping Wang,&nbsp;Fei Li,&nbsp;Yabin Sun,&nbsp;Yanling Shi,&nbsp;Xiaoji Li","doi":"10.1002/jnm.70017","DOIUrl":"https://doi.org/10.1002/jnm.70017","url":null,"abstract":"<div>\u0000 \u0000 <p>Gate-all-around field-effect transistors (GAAFETs) have garnered extensive research interest and industrial attention due to the higher gate control capability and remarkable scalability. However, as the nanochannel scales down, the phonon-boundary scattering inside channels is dramatically strengthened, resulting in a significant decrease in phonon mean free path (MFP), which in turn leads to a decrease in thermal conductivity and deteriorates electrothermal characteristics. In this paper, to accurately evaluate the degradation of thermal conductivity for confined nanochannels, an analytical model is developed by revising the boundary-induced reduction function related to both nanochannel width and thickness. The results show that the thermal conductivity calculated by the proposed model agrees well with the experimental data within 1% error over large temperature range for nanosheet and nanowire structures. Moreover, significant deviations of 6.11% in on-state current and 41.7 K in temperature are observed between the proposed and conventional models for three-stacked GAAFETs. The proposed revised methodology offers invaluable insights for assessing the electrothermal characteristics of nanodevices.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noise Factor of a Transmission Line Subjected to Thermal Gradients","authors":"Sergio Colangeli,&nbsp;Walter Ciccognani,&nbsp;Patrick E. Longhi,&nbsp;Ernesto Limiti","doi":"10.1002/jnm.70007","DOIUrl":"https://doi.org/10.1002/jnm.70007","url":null,"abstract":"<div>\u0000 \u0000 <p>A novel, analytical treatment of noise factor in ideal transmission lines subjected to thermal gradients is presented. Temperature dependence on the propagation direction is assumed linear, whereas line loss is initially considered constant. The latter restriction is then removed, in such a manner that, for the first time in the literature, linearly varying line losses are also addressed. In both cases, closed formulae are presented allowing to compute line noise factor for arbitrary source terminations. Previous numerical implementations of the underlying theory are also reappraised both as an introduction to the Reader and as a test bench of the closed-form results. A discussion of the effects of a non-uniform temperature distribution across the transverse section of the transmission line is provided upfront, so as to clarify the conditions under which the usual simplifications are valid. This discussion too is believed by the Authors to be original.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Wide Stopband Bandpass Filter Using Second-Order M-Type Circuit Based on Glass-Based IPD Technology","authors":"Jianye Wang,&nbsp;Yazi Cao,&nbsp;Wei Wu,&nbsp;Gaofeng Wang","doi":"10.1002/jnm.70010","DOIUrl":"https://doi.org/10.1002/jnm.70010","url":null,"abstract":"<div>\u0000 \u0000 <p>An ultra-wide stopband bandpass filter (BPF) using second-order M-type circuit is proposed by virtue of glass-based integrated passive device (IPD) technology. The second-order M-type circuit is composed of two first-order M-type circuits in series. The first-order M-type circuit consists of a low-pass filter (LPF) and a high-pass filter (HPF), each of which can generate one transmission zero. The second-order M-type circuit can generate two transmission zeros in the low frequency band and another two transmission zeros in the high frequency band, which can achieve high rejection in the upper ultra-wide stopband. The proposed BPF covering 3.3–4.2 GHz is fabricated with a compact size of 1.0 mm × 1.0 mm × 0.3 mm on glass-based IPD technology. According to the measurements, the fabricated BPF can achieve a minimum in-band insertion loss less than 1.4 dB, a return loss better than 15.6 dB, and more than 20 dB ultra-wide stopband rejection from 5.81 to 43.5 GHz. Compared to the previous designs, the proposed BPF shows the superior advantages of compact size and ultra-wide stopband.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Accuracy Analyses of FDTD Resonance Frequency Calculations for a Partially Dielectric-Filled Cavity","authors":"Osman S. Bişkin,&nbsp;Talha Saydam,&nbsp;Serkan Aksoy","doi":"10.1002/jnm.70011","DOIUrl":"https://doi.org/10.1002/jnm.70011","url":null,"abstract":"&lt;div&gt;\u0000 \u0000 &lt;p&gt;In this study, accuracy analyses of resonance frequency calculations for a three-dimensional partially dielectric-filled cavity are investigated by using finite difference time domain (FDTD) method. The calculations are performed for low- and high-contrast lossless dielectric materials. In order to excite multicavity modes, the cavity is driven by a Gaussian pulse source. The main error sources for the numerical resonance frequency calculations of the partially dielectric-filled cavity are (i) applied technique for treatment of a dielectric interface between free space and material medium and (ii) numerical dispersion of the FDTD method. The effects of these errors are analyzed both in detail. A no averaging (without any averaging), a proper averaging technique for the low-/high-contrast case, and the dielectric functioning technique with three different distances of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;mo&gt;∆&lt;/mo&gt;\u0000 &lt;mi&gt;z&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mo&gt;,&lt;/mo&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;∆&lt;/mo&gt;\u0000 &lt;mi&gt;z&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mo&gt;,&lt;/mo&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;and&lt;/mtext&gt;\u0000 &lt;mspace&gt;&lt;/mspace&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;7&lt;/mn&gt;\u0000 &lt;mo&gt;∆&lt;/mo&gt;\u0000 &lt;mi&gt;z&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ 3Delta z,5Delta z,mathrm{and} 7Delta z $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; are applied for the treatment of dielectric interface. Additionally, four spatial resolutions of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;10&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /10 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;20&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /20 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;30&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /30 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, and &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;λ&lt;/mi&gt;\u0000 &lt;mo&gt;⁄&lt;/mo&gt;\u0000 &lt;mn&gt;40&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$$ lambda /40 $$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; are used for the numerical dispersion analyses. The calculated results ","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hyperparameter Optimized SVR Model Based on Particle Swarm Algorithm for RF Power Transistors","authors":"Zhiwei Gao,&nbsp;Bo Liu,&nbsp;Giovanni Crupi,&nbsp;Jialin Cai","doi":"10.1002/jnm.70013","DOIUrl":"https://doi.org/10.1002/jnm.70013","url":null,"abstract":"<div>\u0000 \u0000 <p>A novel approach for optimizing the hyperparameters of a support vector regression (SVR) model is presented for radio frequency (RF) power transistors. In standard SVR models, hyperparameters are enhanced using grid search optimization (GSO), which can be inefficient. In this study, particle swarm optimization (PSO) is introduced as a method for optimizing hyperparameters in a SVR model that increases the model optimization efficiency significantly in comparison with GSO while maintaining a high level of performance. To verify the accuracy and effectiveness of the model, a 10-W GaN power transistor produced by Wolfspeed is used. In comparison to the existing GSO-SVR model, the proposed PSO-SVR model demonstrates superior performance and efficiency.</p>\u0000 </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}