{"title":"利用pt -硅氧化物IDT改进高温TCF的SAW传感器的设计与优化","authors":"Aditya Kumar Nagmani, Basudeba Behera","doi":"10.1002/jnm.70054","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This paper investigates two conventional and four proposed structures designed by patterning the SiO<sub>2</sub> film over the (0°, 138.5°, 26.6°) cut langasite (LGS) substrate. The results are compared with those obtained with a langasite resonator designed without the SiO<sub>2</sub> film. All langasite structures are investigated at elevated temperatures up to 600°C using a 3-D finite element modeling method. The proposed structures are optimized for the lowest temperature coefficient of frequency (TCF) and high coupling factor (<i>k</i><sup><i>2</i></sup>) as a function of SiO<sub>2</sub> film thickness for the operating temperature range. The optimized structure reduces the TCF to 2.52 ppm/°C at room temperature and for high temperatures to as low as 13.78 ppm/°C at 600°C. An enhanced coupling factor of 0.05% is obtained for the optimized structure at room temperature compared to the conventional structures. Thus, the systematically optimized structure may be selected to realize a temperature sensor that can perform at elevated temperatures.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 3","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Optimization of a SAW Sensor With Improved TCF at High Temperatures Using Pt-Silicon Oxide IDT\",\"authors\":\"Aditya Kumar Nagmani, Basudeba Behera\",\"doi\":\"10.1002/jnm.70054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>This paper investigates two conventional and four proposed structures designed by patterning the SiO<sub>2</sub> film over the (0°, 138.5°, 26.6°) cut langasite (LGS) substrate. The results are compared with those obtained with a langasite resonator designed without the SiO<sub>2</sub> film. All langasite structures are investigated at elevated temperatures up to 600°C using a 3-D finite element modeling method. The proposed structures are optimized for the lowest temperature coefficient of frequency (TCF) and high coupling factor (<i>k</i><sup><i>2</i></sup>) as a function of SiO<sub>2</sub> film thickness for the operating temperature range. The optimized structure reduces the TCF to 2.52 ppm/°C at room temperature and for high temperatures to as low as 13.78 ppm/°C at 600°C. An enhanced coupling factor of 0.05% is obtained for the optimized structure at room temperature compared to the conventional structures. Thus, the systematically optimized structure may be selected to realize a temperature sensor that can perform at elevated temperatures.</p>\\n </div>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"38 3\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70054\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70054","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design and Optimization of a SAW Sensor With Improved TCF at High Temperatures Using Pt-Silicon Oxide IDT
This paper investigates two conventional and four proposed structures designed by patterning the SiO2 film over the (0°, 138.5°, 26.6°) cut langasite (LGS) substrate. The results are compared with those obtained with a langasite resonator designed without the SiO2 film. All langasite structures are investigated at elevated temperatures up to 600°C using a 3-D finite element modeling method. The proposed structures are optimized for the lowest temperature coefficient of frequency (TCF) and high coupling factor (k2) as a function of SiO2 film thickness for the operating temperature range. The optimized structure reduces the TCF to 2.52 ppm/°C at room temperature and for high temperatures to as low as 13.78 ppm/°C at 600°C. An enhanced coupling factor of 0.05% is obtained for the optimized structure at room temperature compared to the conventional structures. Thus, the systematically optimized structure may be selected to realize a temperature sensor that can perform at elevated temperatures.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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