Design and Parametric Analysis of Ferroelectric Material Based Nanoscale Device Structure

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-05-08 DOI:10.1002/jnm.70055

Mandeep Singh, Tarun Chaudhary, Balwinder Raj

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引用次数: 0

Abstract

This research article introduces a novel nanoscale ferroelectric field effect transistor (FeFET) structure design. The research work involves the analysis and simulation of semiconductor devices based on ferroelectric material, focusing on key parameters such as drain current, transconductance, acceptor concentrations, energy band diagram, and electric potential. The FeFET's performance is thoroughly investigated with respect to ON current, OFF current, and sub-threshold slope. Parametric analysis of the FeFET is conducted to explore its suitability for low-power circuit applications. The presented FeFET device exhibits impressive characteristics, including a high ON current (I_ON = 4.5 × 10⁻⁵ A) and a low OFF current (I_OFF = 8.4 × 10⁻¹² A). To assess its performance, the FeFET is modeled and simulated using TCAD software. The study also investigates the influence of various parameters, such as gate length, gate oxide thickness, and ferroelectric film thickness, on the device's behavior and performance. This comprehensive research provides valuable insights into the design and optimization of nanoscale FeFET structures based on ferroelectric materials.

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基于铁电材料的纳米器件结构设计与参数分析

本文介绍了一种新型纳米铁电场效应晶体管（FeFET）的结构设计。研究工作涉及基于铁电材料的半导体器件的分析和仿真，重点关注漏极电流、跨导、受体浓度、能带图和电势等关键参数。从导通电流、关断电流和亚阈值斜率方面全面研究了ffet的性能。对ffet进行了参数分析，以探讨其在低功耗电路中的适用性。该器件具有较高的ON电流（ION = 4.5 × 10−5 a）和较低的OFF电流（IOFF = 8.4 × 10−12 a）。为了评估其性能，利用TCAD软件对ffet进行了建模和仿真。该研究还探讨了各种参数，如栅极长度、栅极氧化物厚度和铁电膜厚度对器件行为和性能的影响。这项综合研究为基于铁电材料的纳米级FeFET结构的设计和优化提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.