室温至低温下硅基mosfet的综合阈值电压模型

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-01 DOI:10.1002/jnm.70041

Yijie Zhang, XinYi Zhang, Guohe Zhang, Daofeng Zhang, Bo Li, Lei Wang, Jianhui Bu

{"title":"室温至低温下硅基mosfet的综合阈值电压模型","authors":"Yijie Zhang, XinYi Zhang, Guohe Zhang, Daofeng Zhang, Bo Li, Lei Wang, Jianhui Bu","doi":"10.1002/jnm.70041","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This study analyses various factors that affect the threshold voltage of MOSFETs at deep cryogenic temperatures, including band-tail state, field-assisted ionization, and interface traps. Based on the analysis, a new model is developed for Si-based MOSFETs covering a wide temperature range from 10 to 300 K. The validity of the model is confirmed through experiments of bulk silicon MOSFETs, FDSOI MOSFETs, and n-FinFET.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comprehensive Threshold Voltage Model for Si-Based MOSFETs From Room to Cryogenic Temperatures\",\"authors\":\"Yijie Zhang, XinYi Zhang, Guohe Zhang, Daofeng Zhang, Bo Li, Lei Wang, Jianhui Bu\",\"doi\":\"10.1002/jnm.70041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>This study analyses various factors that affect the threshold voltage of MOSFETs at deep cryogenic temperatures, including band-tail state, field-assisted ionization, and interface traps. Based on the analysis, a new model is developed for Si-based MOSFETs covering a wide temperature range from 10 to 300 K. The validity of the model is confirmed through experiments of bulk silicon MOSFETs, FDSOI MOSFETs, and n-FinFET.</p>\\n </div>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"38 2\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70041\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70041","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本研究分析了影响深低温下mosfet阈值电压的各种因素，包括带尾态、场辅助电离和界面陷阱。在此基础上，开发了一种覆盖10 ~ 300 K宽温度范围的硅基mosfet的新模型。通过体硅mosfet、FDSOI mosfet和n-FinFET的实验验证了该模型的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Comprehensive Threshold Voltage Model for Si-Based MOSFETs From Room to Cryogenic Temperatures

This study analyses various factors that affect the threshold voltage of MOSFETs at deep cryogenic temperatures, including band-tail state, field-assisted ionization, and interface traps. Based on the analysis, a new model is developed for Si-based MOSFETs covering a wide temperature range from 10 to 300 K. The validity of the model is confirmed through experiments of bulk silicon MOSFETs, FDSOI MOSFETs, and n-FinFET.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.