A Triple RESURF Si/SiC HeteroJunction LDMOS and Its Analytical Model

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-02 DOI:10.1002/jnm.70039

Nan Wang, Xiarong Hu, Yonggen Xu, Tianci Li

{"title":"A Triple RESURF Si/SiC HeteroJunction LDMOS and Its Analytical Model","authors":"Nan Wang, Xiarong Hu, Yonggen Xu, Tianci Li","doi":"10.1002/jnm.70039","DOIUrl":null,"url":null,"abstract":"<div>\n \n In this paper, a Triple RESURF Si/SiC HeteroJunction LDMOS (TR-HJ-LDMOS) structure is proposed. The TR-HJ-LDMOS features a P-type layer buried deep into the drift region. Compared with Double RESURF (DR) and Single RESURF (SR) Si/SiC HeteroJunction LDMOS (HJ-LDMOS), the drift depletion effect is strengthened. As a result, the drift doping concentration is increased, and the specific on-resistance (Rs,on) is decreased. The simulation results show that the Rs,on of the 300 V-class TR-HJ-LDMOS is 20mΩ·cm2, which is reduced by 28.6% and 50.0%, respectively, compared with DR-HJ-LDMOS and SR-HJ-LDMOS. Moreover, an analytical model for the electric field distributions of the Triple RESURF Si/SiC HeteroJunction LDMOS is proposed in this paper. The analytical expressions of the surface field and potential distributions are presented. The effect of the P-layer concentration, thickness, position, as well as the drain depth and drift thickness on the electric field distributions of the TR-HJ-LDMOS are discussed in detail. The proposed model can also be applied in the SR and DR HJ-LDMOS.\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70039","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this paper, a Triple RESURF Si/SiC HeteroJunction LDMOS (TR-HJ-LDMOS) structure is proposed. The TR-HJ-LDMOS features a P-type layer buried deep into the drift region. Compared with Double RESURF (DR) and Single RESURF (SR) Si/SiC HeteroJunction LDMOS (HJ-LDMOS), the drift depletion effect is strengthened. As a result, the drift doping concentration is increased, and the specific on-resistance (R_s,on) is decreased. The simulation results show that the R_s,on of the 300 V-class TR-HJ-LDMOS is 20mΩ·cm², which is reduced by 28.6% and 50.0%, respectively, compared with DR-HJ-LDMOS and SR-HJ-LDMOS. Moreover, an analytical model for the electric field distributions of the Triple RESURF Si/SiC HeteroJunction LDMOS is proposed in this paper. The analytical expressions of the surface field and potential distributions are presented. The effect of the P-layer concentration, thickness, position, as well as the drain depth and drift thickness on the electric field distributions of the TR-HJ-LDMOS are discussed in detail. The proposed model can also be applied in the SR and DR HJ-LDMOS.

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一种三重复用Si/SiC异质结LDMOS及其分析模型

本文提出了一种三重复用Si/SiC异质结LDMOS （TR-HJ-LDMOS）结构。TR-HJ-LDMOS具有深埋于漂移区的p型层。与双RESURF （DR）和单RESURF (SR) Si/SiC异质结LDMOS （HJ-LDMOS）相比，漂移损耗效应增强。漂移掺杂浓度增加，比导通电阻（Rs,on）降低。仿真结果表明，300 v级TR-HJ-LDMOS的r值为20mΩ·cm2，比DR-HJ-LDMOS和SR-HJ-LDMOS分别降低了28.6%和50.0%。此外，本文还建立了三层重熔硅/碳化硅异质结LDMOS的电场分布解析模型。给出了表面场和电位分布的解析表达式。详细讨论了p层浓度、厚度、位置以及漏极深度和漂移厚度对TR-HJ-LDMOS电场分布的影响。该模型也适用于SR和DR HJ-LDMOS。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.