{"title":"Design considerations of scaled sub-0.1 /spl mu/m PD/SOI CMOS circuits","authors":"C. Chuang, R. Joshi, R. Puri, Keunwoo Kim","doi":"10.1109/ISQED.2003.1194724","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194724","url":null,"abstract":"This paper reviews the circuit design considerations of scaled sub-0.1 /spl mu/m partially-depleted SOI (PD/SOI) CMOS circuits for high-performance digital applications. The impact of technology/device scaling and design challenges are highlighted. Unique design aspects and issues resulting from the scaling of PD/SOI device structure, such as parasitic bipolar effect and reduced-V/sub T/ leakage, hysteretic V/sub T/ variation, low-voltage impact ionization, higher V/sub T,lin/ to maintain adequate V/sub T,sat/, scaling/thinning of Si film, gate-to-body tunneling current, self-heating, soft error rate (SER), and the introduction of strained-Si channel on SOI are addressed.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127354735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"LYS: a solution for system on chip (SoC) production cost and time to volume reduction","authors":"Jean-Pierre Heliot, Florent Parmentier, M. Baron","doi":"10.1109/ISQED.2003.1194714","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194714","url":null,"abstract":"With the introduction of new generations of systems on chip (SoC) on 0.18 /spl mu/m and 0.12 /spl mu/m technologies, the production cost and time to volume become more and more critical, on top of best in class level of quality and reliability. The SoC approach-widely based on the usage of cell libraries or reusable IP blocks-brings extreme complexity. Accurate knowledge and level of validation on silicon of each block of library/IP used within new chip becomes mandatory in order to secure first silicon success. In this context, knowledge sharing between users of the same IP in different SoC plays a key role in cost optimisation and time to volume reduction. This paper describes the information system solution developed on 0.18 /spl mu/m technology, named LYS (Library Yield System). LYS allows keeping track of the version of library cells or reusable IP blocks used within each SoC of a given technology. Each SoC project is analysed at different steps of its life cycle starting from product specification up to silicon qualification. Block by block silicon results applied to SoC, and early warning system linking the different projects together, allow to optimise and update in real time the content of each projects, and to perform the needed improvements. This methodology allows, before mask order, any new project to be updated with appropriate library or IP blocks revision in order to get rid of known silicon issues detected on previous projects. This solution is now fully implemented and in use on 0.35 /spl mu/m, 0.25 /spl mu/m, 0.18 /spl mu/m, 0.12 /spl mu/m, and 90 nm technologies. As far as we know, there is no equivalent solution available and running in microelectronics companies.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116154075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Impact of interoperability on CAD-IP reuse: an academic viewpoint","authors":"A. Kahng, I. Markov","doi":"10.1109/ISQED.2003.1194733","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194733","url":null,"abstract":"Mind-boggling complexity of EDA tools necessitates reuse of intellectual property in any large-scale commercial or academic operation. However, due to the nature of software, a tool component remains an ill-defined concept, in contrast to a hardware component (core) with its formally specified functions and interfaces. Furthermore, EDA tasks often evolve rapidly to fit new manufacturing contexts or new design approaches created by circuit designers; this leads to moving targets for CAD software developers. Yet, it is uneconomical to write off tool reuse as simply an endemic \"software problem\". Our main message is that CAD tools should be planned and designed in terms of reusable components and glue code. This implies that industrial and academic research should focus on (1) formulating practical tool components in terms of common interfaces, (2) implementing such components, and (3) performing detailed evaluations of such components. While this is reminiscent of hardware reuse, most existing EDA tools are designed as stand-alone programs and interface through files.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129249860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Coupled simulation of circuit and piezoelectric laminates","authors":"Chenggang Xu, T. Fiez, K. Mayaram","doi":"10.1109/ISQED.2003.1194760","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194760","url":null,"abstract":"In this paper, an algorithm for the coupled simulation of circuit and piezoelectric laminate devices is presented. A finite element solver for piezoelectric laminates is included in the SPICE framework as a capacitor. The charge of this capacitor is a function of both the terminal voltage and the mechanical strain in the piezoelectric material. The coupled simulator allows simulation of novel micro power generation circuits based on piezoelectric laminates.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114214146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solving the SoC test scheduling problem using network flow and reconfigurable wrappers","authors":"S. Koranne","doi":"10.1109/ISQED.2003.1194715","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194715","url":null,"abstract":"Test scheduling for core-based SoCs is a challenging problem. Test schedules must be crafted with the objectives of minimizing testing time and ATE vector memory requirements, to reduce test cost, under the constraints of total available test access mechanism (TAM) width. Prior research in test scheduling has mainly used search procedures like ILP and rectangle packing to solve this problem, but these approaches are inherently computationally expensive. In this paper we describe a novel algorithm to solve the test scheduling problem using a combination of network flow algorithms, malleable job scheduling and reconfigurable wrapper design. Our approximation algorithm has polynomial time complexity and produces schedules close to the theoretical lower bound. Extensive experimental results using the new ITC'02 SoC benchmarks validate the quality of our solutions.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125184295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analyzing internal-switching induced simultaneous switching noise","authors":"Li Yang, J. Yuan","doi":"10.1109/ISQED.2003.1194768","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194768","url":null,"abstract":"The internal-switching induced simultaneous switching noise (SSN) is studied in the paper. Unlike ground bounce caused by driving off-chip loading, both power-rail and ground-rail wire/pin impedances are important in evaluating internal SSN, and the double negative feedback mechanism should be accounted for. Based on the lumped-model analysis and taking into account the parasitic effects and velocity-saturation effect of MOS transistors, a novel analytical model is developed which includes both switching and non-switching gates. The proposed model is employed to analyze on-chip decoupling capacitance, wire/pin inductance effect and loading effect analytically. Good agreements with SPICE simulations are obtained for submicron technology.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125222884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the accuracy of return path assumption for loop inductance extraction for 0.1 /spl mu/m technology and beyond","authors":"Soyoung Kim, Y. Massoud, S. Wong","doi":"10.1109/ISQED.2003.1194766","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194766","url":null,"abstract":"The most common assumption for chip-level inductance extraction is to restrict the current return path to the closest power or ground lines. This paper shows that this assumption is not necessarily valid for technologies beyond 0.1 /spl mu/m. The actual inductance can exceed twice the value that is extracted from the model considering only the nearest current return paths. Analytical formulae to predict the worst case self inductance are proposed to deal with the errors that result from this assumption. These equations can be used as metrics to decide the size of inductance extraction window for future CAD tools.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"350 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125628932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hidden quality, crouching customer - how much does the quality of EDA tools impact electronic design?","authors":"T. Maniwa","doi":"10.1109/ISQED.2003.1194763","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194763","url":null,"abstract":"Description In today’s fast-paced electronics market, design engineers face incredible challenges keeping up with increasingly complex technology and time-to-market pressures. Many design engineers facing these challenges say that quality problems with their EDA tools cost them dearly in lost productivity and in missed deadlines. At the same time, the same design engineers also say that they urgently need better technology, features, and special functions in the EDA tools they use in their work. Thus, Quality in EDA products is crucial to customer success or is it? How much quality is enough to keep the industry moving at its fast pace? Is quality a hidden dragon that could cause customers to crouch in fear? What are the costs and who will pay for higher quality? Can EDA customers have their cake and eat it too? Examples of some provocative questions that can be posed are: “For the user is EDA quality worth the hype at the expense of technology?” “Do mainstream and power users want higher quality or more functionality” “Do users of front-end and back-end tools require different level of quality?” This panel will examine the core issues of quality in EDA products and the impact on electronic design — from the viewpoints of customers, EDA vendors and independent analysts.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122900002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Using integer equations for high level formal verification property checking","authors":"B. Alizadeh, M. R. Kakoee","doi":"10.1109/ISQED.2003.1194711","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194711","url":null,"abstract":"This paper describes the use of integer equations for high level modeling digital circuits for application of formal verification properties at this level. Most formal verification methods use BDDs, as a low level representation of a design. BDD operations require separation of data and control parts of a design and their implementation requires large CPU time and memory. In our method; a behavioral state machine is represented by a list of integer equations, and RT level properties are directly applied to this representation. This reduces the need for large BDD data structures and uses far less memory. Furthermore, this method is applied to circuits without having to separate their data and control sections. Integer equations are solved recursively by replacement and simplification operations. For this implementation, we use a canonical form of integer equations. This paper compares our results with those of the VIS verification tool that is a BDD based program.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134348761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Active device under bond pad to save I/O layout for high-pin-count SOC","authors":"M. Ker, Jeng-Jie Peng, H. Jiang","doi":"10.1109/ISQED.2003.1194738","DOIUrl":"https://doi.org/10.1109/ISQED.2003.1194738","url":null,"abstract":"To save layout area for electrostatic discharge (ESD) protection design in the SOC era, test chip with large size NMOS devices placed under bond pads has been fabricated in 0.35 /spl mu/m one-poly-four-metal (1P4M) 3.3V CMOS process for verification. The bond pads had been drawn with different layout patterns on the inter-layer metals to investigate the effect of bonding stress on the active devices under the pads. Threshold voltage, off-state drain current, and gate leakage current of these devices under bond pads have been measured. After assembled in wire bond package, the measurement results show that there are only little variations between devices under bond pads and devices beside bond pads. This result can be applied on saving layout area for on-chip ESD protection devices or I/O devices of IC products, especially for the high-pin-count system-on-a-chip (SOC).","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"62 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132360856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}