{"title":"Hierarchical SoC testing scheduling based on the ant colony algorithm","authors":"Xiaole Cui, Wei Cheng, Xiaoye Wang, Liang Yin, Yachun Sun, Yan Zhou","doi":"10.1109/ASICON.2009.5351198","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351198","url":null,"abstract":"SoC testing scheduling is an NP hard problem, and it is more complex for the hierarchical SoC architecture. By formulating the SoC testing scheduling problem as a 2-D bin-packing model, this paper solves the problem for the hierarchical SoC with the Ant Colony Optimization (ACO) algorithm to reduce testing application time. Experimental results on ITC'02 benchmark circuits show that the ACO algorithm is more effective than earlier proposed methods.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122772022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A sub-1V 115nA 0.35µm CMOS voltage reference for ultra low-power applications","authors":"Haifeng Ma, F. Zhou","doi":"10.1109/ASICON.2009.5351397","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351397","url":null,"abstract":"A voltage reference circuit capable of sub-1V operation and with ultra-low power consumption is introduced in this paper. In the proposed circuit, proportional-to-absolute-temperature voltage is generated by using the series-connection of two NMOS devices working in sub-threshold region and the gate-to-source voltage of another NMOS device is adopted to realize the complementary-to-absolute-temperature voltage. Moreover, the temperature compensation is performed by using a switch-capacitor circuit. The proposed circuit is implemented in Chartered 0.35µm CMOS technology and occupies an active chip area of 0.021mm2. Post-layout simulation results show that it can operate with a supply voltage down to 0.9V while consuming 115nA ground current. With 1V power supply, the output voltage is 142.8mV at 25 °C and the temperature coefficient is 25.5ppm/°C1.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114505013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of a noise-canceling differential CMOS LNA for 3.1–10.6 GHz UWB receivers","authors":"Jinhua Liu, Guican Chen, Ruizhi Zhang","doi":"10.1109/ASICON.2009.5351170","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351170","url":null,"abstract":"An ultra-wideband (UWB) 3.1–10.6 GHz fully differential low noise amplifier (LNA) employing the broadband noise-canceling technique is presented. With the proposed circuit topology, the noise from the input matching transistor is entirely suppressed over the full UWB band. The LNA is designed in 0.18µm CMOS technology. The simulated results show that the noise figure is 3.7–4.5 dB and the power gain is 13.4–14.1 dB in the desired UWB band, both the input and output reflection coefficients are below −10dB, and the IIP3 is −6.3dBm at 5.7 GHz. It consumes 12.5 mW from a 1.8V supply.1","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117043065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Stochastic inductance model of OTA-based inductor","authors":"R. Banchuin, Rougsan Chaisrichatorn, B. Chipipop","doi":"10.1109/ASICON.2009.5351186","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351186","url":null,"abstract":"In this research, the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been explored and modeled as the corresponding Probability Density Function, PDF which the complete probabilistic distribution information can be obtained. This research has been performed based upon CMOS technology. The derived model has been found to provide a sufficient accuracy due to the strong agreement between its corresponding calculated Cumulative Distribution Function, CDF and the measured one. The proposed model is promisingly applicable to the OTA-based inductor of any topologies constructed with any basis OTA. Hence, it has been found to be a convenience tool for the design of various applications of the OTA-based inductor. Furthermore, the conceptual idea behind this research is also applicable to any current controlled active inductor.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129585015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development and production of ZCS soft switching converter-based gate driver IC","authors":"Jun Jiang, Xian Wu, Bo Hu, J. Liao, Lu Zhao","doi":"10.1109/ASICON.2009.5351405","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351405","url":null,"abstract":"In this paper, design of ZCS soft switching converter-based gate driver monolithic integrated circuit (IC) is presented. The circuit is developed in B6035 high-voltage bipolar process technology of Sichuan Institute of Solid-state Circuit. It consists of voltage detection logic, switch driving, isolation transformer excitation voltage blow-down unit circuits. The circuit and the isolation driving transformer jointly comprise the driving circuit of power MOS transistor. The principle of ZCS switching resonance is used to design the circuit. The circuit can drive MOS transistor with low power efficiently, and is especially suitable for the driving circuit of high-power ZCS soft-switching power supply.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129916301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Youtao Zhang, Xiaopeng Li, Ao Liu, Ming Zhang, Feng Qian
{"title":"A single channel 2GS/s 6-bit ADC with cascade resistive averaging","authors":"Youtao Zhang, Xiaopeng Li, Ao Liu, Ming Zhang, Feng Qian","doi":"10.1109/ASICON.2009.5351501","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351501","url":null,"abstract":"A single channel 2GS/s 6-bit ADC with cascade resistive averaging is demonstrated in 0.18µm CMOS. The proposed power efficient crossing connection method of averaging resistors has less reference voltage consumed than convention with excellent offset averaging. The peak DNL and INL are measured as 0.26 LSB and 0.21 LSB, respectively. The SNDR and SFDR have achieved 34.2 and 37.5dB, respectively, with 1.22 MHz input signal and 2GS/s. The SNDR and SFDR maintain above 30 and 35dB, respectively, up to1000MHz input signal and 900MS/s. The proposed ADC, including onchip track-and-hold amplifiers and clock buffers, consumes 570 mW from a single 1.8V supply while operating at 2GS/s1.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128286519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaowen Chen, Zhonghai Lu, A. Jantsch, Shuming Chen
{"title":"Speedup analysis of data-parallel applications on Multi-core NoCs","authors":"Xiaowen Chen, Zhonghai Lu, A. Jantsch, Shuming Chen","doi":"10.1109/ASICON.2009.5351597","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351597","url":null,"abstract":"As more computing cores are integrated onto a single chip, the effect of network communication latency is becoming more and more significant on Multi-core Network-on-Chips (NoCs). For data-parallel applications, we study the model of parallel speedup by including network communication latency in Amdahl's law. The speedup analysis considers the effect of network topology, network size, traffic model and computation/communication ratio. We also study the speedup efficiency. In our Multi-core NoC platform, a real data-parallel application, i.e. matrix multiplication, is used to validate the analysis. Our theoretical analysis and the application results show that the speedup improvement is nonlinear and the speedup efficiency decreases as the system size is scaled up. Such analysis can be used to guide architects and programmers to improve parallel processing efficiency by reducing network latency with optimized network design and increasing computation proportion in the program.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128936025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal via planning aware force-directed floorplanning for D ICs","authors":"Yun Huang, Qiang Zhou, Yici Cai","doi":"10.1109/ASICON.2009.5351314","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351314","url":null,"abstract":"The three-dimensional (3D) integration circuit is a new technology with higher integration density and better performance than 2D ICs. To solve the critical thermal issue in 3D layout, we propose a force-directed floorplanning algorithm. This algorithm naturally integrates with the planning of thermal vias and reasonably allocates white space for inserting the thermal vias. It solves the problem of the thermal distribution disturbance by the white space reassignment. Compare with the after-floorplanning thermal via planning algorithm, this algorithm decreases the number of thermal vias by 8.2% while increases the area by 3.5% on average.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130385620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and Simulation of a SAW Filter and a new approach for bandwidth's tuning","authors":"M. Sadeghi, R. Ghayour, H. Abiri, M. Karimi","doi":"10.1109/ASICON.2009.5351328","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351328","url":null,"abstract":"In this paper the analysis and structure of the SAW devices including SAW filters are examined and improved. The SAW devices have good stability and reliability and they are widely used in high-frequency communication systems such as mobile and TV sets. The design procedure of band-pass SAW filter is explained and accordingly a band-pass SAW filter with center frequency of 100 MHz is designed and simulated by COMSOL MULTIPHYSISC and MATLAB soft ware. The idea of adding a sensitive layer between the input and out inter digital transducers (IDT) is also examined. It is shown that by changing the dimension of this layer, the specification of the filter is changed. Hence, it can be used as an effective tool for adjusting the desired specification of the filter such as the bandwidth and insertion loss.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123845337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liyan Jin, Tae-Hoon Kim, Cheon-Hyo Lee, P. Ha, Young-Hee Kim
{"title":"Low-area 1-kb multi-bit OTP IP design","authors":"Liyan Jin, Tae-Hoon Kim, Cheon-Hyo Lee, P. Ha, Young-Hee Kim","doi":"10.1109/ASICON.2009.5351324","DOIUrl":"https://doi.org/10.1109/ASICON.2009.5351324","url":null,"abstract":"In this paper 1-kb multi-bit OTP IP, which is non-volatile memory, is designed for a power management IC. A conventional multi-bit OTP cell uses isolated NMOS transistor, but the cell size is large in the BCD process. So, PMOS transistor is used instead of the isolated NMOS transistor as antifuse, and the cell size is minimized by optimizing the size of PMOS transistor. In addition, an ESD protection circuit is added to prevent the case that any cell is programmed by high voltage at ESD test. The 1kb OTP IP is designed using Dongbu's 0.18µm BCD process and the layout size of the IP is 160.490 × 506.255 µm 21.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123329842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}