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Computational Failure Analysis of Resistive RAM Used as a Synapse in a Convolutional Neural Network for Image Classification 用于图像分类卷积神经网络突触的电阻性RAM计算失效分析
EDFA Technical Articles Pub Date : 2021-02-01 DOI: 10.31399/asm.edfa.2021-1.p029
Nagaraj Lakshmana Prabhu, N. Raghavan
{"title":"Computational Failure Analysis of Resistive RAM Used as a Synapse in a Convolutional Neural Network for Image Classification","authors":"Nagaraj Lakshmana Prabhu, N. Raghavan","doi":"10.31399/asm.edfa.2021-1.p029","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-1.p029","url":null,"abstract":"\u0000 Various NVM technologies are being explored for neuromorphic system realization, including resistive RAM, ferroelectric RAM, phase change RAM, spin transfer torque RAM, and NAND flash. This article discusses the potential of RRAM for such applications and evaluates key performance and reliability metrics in the context of neural network image classification. The authors conclude that the accuracy-power tradeoff may be further improved using alternative material stacks and multi-layer dielectrics so as to achieve better control of the oxygen vacancy or metallic filamentation process that governs RRAM switching characteristics.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131505074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Applied Failure Analysis Tools and Techniques Toward Integrated Circuit Trust and Assurance 应用失效分析工具和技术实现集成电路的信任和保证
EDFA Technical Articles Pub Date : 2021-02-01 DOI: 10.31399/asm.edfa.2021-1.p012
Adam G. Kimura, Adam R. Waite, Jonathan Scholl, Glen D. Via
{"title":"Applied Failure Analysis Tools and Techniques Toward Integrated Circuit Trust and Assurance","authors":"Adam G. Kimura, Adam R. Waite, Jonathan Scholl, Glen D. Via","doi":"10.31399/asm.edfa.2021-1.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-1.p012","url":null,"abstract":"\u0000 Traditional post-fabrication testing can reliably verify whether or not an IC is working correctly, but it cannot tell the difference between an authentic and counterfeit chip or recognize design changes made with malicious intent. This article presents an IC decomposition workflow, based on FA tools and techniques, that provides a quantifiable level of assurance for components in a zero trust environment.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133713240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
EDFAS Virtual Workshop Highlights EDFAS虚拟研讨会亮点
EDFA Technical Articles Pub Date : 2021-02-01 DOI: 10.31399/asm.edfa.2021-1.p050
D. Grosjean
{"title":"EDFAS Virtual Workshop Highlights","authors":"D. Grosjean","doi":"10.31399/asm.edfa.2021-1.p050","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-1.p050","url":null,"abstract":"\u0000 This column provides commentary about the 2020 EDFAS Virtual Workshop. Highlights from the three days of online sessions include a keynote address on the history of MEMS, a panel discussion on 3D packaging technologies, and nearly 60 technical papers and posters. Workshop attendees also had the opportunity to walk through a virtual Expo Hall and learn about new analytical tools and techniques and interact with equipment vendors.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126941150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Finding Shorted Components on Printed Circuit Boards by Infrared-Based Direct Current Injection Method 用红外直流注入法寻找印刷电路板上的短路元件
EDFA Technical Articles Pub Date : 2021-02-01 DOI: 10.31399/asm.edfa.2021-1.p022
Zhifeng Zhu, G. Morris
{"title":"Finding Shorted Components on Printed Circuit Boards by Infrared-Based Direct Current Injection Method","authors":"Zhifeng Zhu, G. Morris","doi":"10.31399/asm.edfa.2021-1.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-1.p022","url":null,"abstract":"\u0000 This article explains how to find shorted components on PCB assemblies using infrared-based direct current injection, a nondestructive method that has several advantages over magnetic microscopy and voltage drop measurement techniques. An application example involving a power board failure is also provided.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130974412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enabling True Root Cause Failure Analysis Using an Atmospheric Oxygen-Only Plasma for Decapsulation of Advanced Packages 使用大气纯氧等离子体对高级封装进行解封，实现真正的根本原因故障分析
EDFA Technical Articles Pub Date : 2021-02-01 DOI: 10.31399/asm.edfa.2021-1.p004
Lea Heusinger-Jonda, Jiaqi Tang, K. Beenakker
{"title":"Enabling True Root Cause Failure Analysis Using an Atmospheric Oxygen-Only Plasma for Decapsulation of Advanced Packages","authors":"Lea Heusinger-Jonda, Jiaqi Tang, K. Beenakker","doi":"10.31399/asm.edfa.2021-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-1.p004","url":null,"abstract":"\u0000 Several failure analysis case studies have been conducted over the past few years, illustrating the importance of preserving root-cause evidence by means of artifact-free decapsulation. The findings from three of those studies are presented in this article. In one case, the root cause of failure is chlorine contamination. In another, it is a combination of corrosion and metal migration. The third case involves an EOS failure, the evidence of which was hidden under a layer of carbonized mold compound. In addition to case studies, the article also includes images that compare the results of different decapsulation methods.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116808607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SAM Theory and Case Studies in Reliability and Counterfeit Detection 可靠性与假币检测的SAM理论与案例研究
EDFA Technical Articles Pub Date : 2020-11-01 DOI: 10.31399/asm.edfa.2020-4.p020
E. Whitney
{"title":"SAM Theory and Case Studies in Reliability and Counterfeit Detection","authors":"E. Whitney","doi":"10.31399/asm.edfa.2020-4.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-4.p020","url":null,"abstract":"\u0000 This article reviews the basic principles of scanning acoustic microscopy (SAM) and presents several case studies demonstrating its use in failure analysis and counterfeit detection. The FA case studies show how SAM is used to detect delamination, cracking, and manufacturing defects in ceramic chip capacitors and resistors, voids in a full-bridge rectifier, and a radiation-induced defect in a microprocessor. In cases involving counterfeit ICs, CSAM images reveal the presence of an abnormality on component packages, evidence of relabeling, and popcorn fractures indicative of the use of excessive heat and force to dislodge components from circuit board assemblies.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126474202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
STEM EBIC: Toward Predictive Failure Analysis at High Resolution STEM EBIC:迈向高分辨率预测失效分析
EDFA Technical Articles Pub Date : 2020-11-01 DOI: 10.31399/asm.edfa.2020-4.p004
W. Hubbard
{"title":"STEM EBIC: Toward Predictive Failure Analysis at High Resolution","authors":"W. Hubbard","doi":"10.31399/asm.edfa.2020-4.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-4.p004","url":null,"abstract":"\u0000 The ability to discern the composition and placement of atoms in a sample makes TEM one of the most powerful characterization tools for microelectronic components. For many devices, however, the dynamics underlying normal operation do not displace atoms. Device function is, instead, mediated by electronic and thermal processes that have little effect on physical structure, necessitating additional tools to determine the causes of failure. In this article, the author presents results indicating that STEM EBIC, with the new SEEBIC mode, can provide electronic contrast that complements the physical-based contrast of STEM imaging. By identifying device features at higher risk of failure, the two methods may open a path to predictive failure analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134580086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Computing Is Still in Basic Research Phase 量子计算仍处于基础研究阶段
EDFA Technical Articles Pub Date : 2020-11-01 DOI: 10.31399/asm.edfa.2020-4.p050
Paul R. Teich
{"title":"Quantum Computing Is Still in Basic Research Phase","authors":"Paul R. Teich","doi":"10.31399/asm.edfa.2020-4.p050","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-4.p050","url":null,"abstract":"\u0000 This column assesses the near-term challenges associated with quantum computing, noting that 15 years is an optimistic estimate for commercially viable quantum cloud computing. In the midst of the struggle, however, there is also opportunity, particularly in metrology and component development.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115356992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advances in Cathodoluminescence: Recent Steps Toward Semiconductor Fabs and FA Labs 阴极发光的进展:半导体晶圆厂和FA实验室的最新进展
EDFA Technical Articles Pub Date : 2020-11-01 DOI: 10.31399/asm.edfa.2020-4.p028
C. Monachon, M. J. Davies
{"title":"Advances in Cathodoluminescence: Recent Steps Toward Semiconductor Fabs and FA Labs","authors":"C. Monachon, M. J. Davies","doi":"10.31399/asm.edfa.2020-4.p028","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-4.p028","url":null,"abstract":"\u0000 This article discusses the basic principles of SEM-based cathodoluminescence (CL) spectroscopy and demonstrates its usefulness in process development, statistical process control, and failure analysis. The technologies where the benefits of CL spectroscopy are most evident are compound semiconductor optoelectronics and high electron mobility transistors as reflected in the application examples.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125977607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DHEM: Ohmic Contact and High-Mobility Channel Engineering and Characterization for ICs 集成电路的欧姆接触和高迁移率通道工程与表征
EDFA Technical Articles Pub Date : 2020-11-01 DOI: 10.31399/asm.edfa.2020-4.p010
A. Joshi, B. Basol
{"title":"DHEM: Ohmic Contact and High-Mobility Channel Engineering and Characterization for ICs","authors":"A. Joshi, B. Basol","doi":"10.31399/asm.edfa.2020-4.p010","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-4.p010","url":null,"abstract":"\u0000 Differential Hall effect metrology (DHEM) provides depth profiles of all critical electrical parameters through semiconductor layers at nanometer-level depth resolution. This article describes the relatively new method and shows how it is used to measure mobility and carrier concentration profiles in different materials and structures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130019963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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