集成电路的欧姆接触和高迁移率通道工程与表征

A. Joshi, B. Basol
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引用次数: 0

摘要

差分霍尔效应测量(DHEM)通过纳米级深度分辨率的半导体层提供所有关键电气参数的深度剖面。本文描述了相对较新的方法,并展示了如何使用它来测量迁移率和载流子浓度分布在不同的材料和结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
DHEM: Ohmic Contact and High-Mobility Channel Engineering and Characterization for ICs
Differential Hall effect metrology (DHEM) provides depth profiles of all critical electrical parameters through semiconductor layers at nanometer-level depth resolution. This article describes the relatively new method and shows how it is used to measure mobility and carrier concentration profiles in different materials and structures.
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