发布求助
文献互助 智能选刊 最新文献

EDFA Technical Articles最新文献

筛选
英文 中文
Defect Characterization of Advanced Packages using Novel Phase and Dark Field X-Ray Imaging 利用新型相位和暗场x射线成像技术表征先进封装的缺陷
EDFA Technical Articles Pub Date : 2020-08-01 DOI: 10.31399/asm.edfa.2020-3.p018
S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun
{"title":"Defect Characterization of Advanced Packages using Novel Phase and Dark Field X-Ray Imaging","authors":"S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun","doi":"10.31399/asm.edfa.2020-3.p018","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p018","url":null,"abstract":"\u0000 Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127030174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Analysis, Statistical Risk Assessment, and Advanced Modeling in a Structured Problem Solving Approach: Case Study for a Delamination Defect in the Automotive Semiconductor Industry 失效分析、统计风险评估和结构化问题解决方法中的高级建模:汽车半导体行业分层缺陷案例研究
EDFA Technical Articles Pub Date : 2020-08-01 DOI: 10.31399/asm.edfa.2020-3.p008
C. Bergès
{"title":"Failure Analysis, Statistical Risk Assessment, and Advanced Modeling in a Structured Problem Solving Approach: Case Study for a Delamination Defect in the Automotive Semiconductor Industry","authors":"C. Bergès","doi":"10.31399/asm.edfa.2020-3.p008","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p008","url":null,"abstract":"\u0000 Failure analysis is the study and presentation of observable or measurable phenomena. Risk assessment, on the other hand, is when root causes are studied to predict the potential for future failures. In this article, the author describes a structured problem-solving approach that consists of failure analysis, risk assessment, and advanced modeling. A case study is also presented in which the probability of future failures, due to a delamination defect, is determined based on field returns.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SRAM Physical Failure Analysis Challenges in Technology Nodes Beyond 14 nm 14纳米以上技术节点的SRAM物理失效分析挑战
EDFA Technical Articles Pub Date : 2020-08-01 DOI: 10.31399/asm.edfa.2020-3.p004
Noor Jehan Saujauddin, Kevin Davidson, Esther P.Y. Chen
{"title":"SRAM Physical Failure Analysis Challenges in Technology Nodes Beyond 14 nm","authors":"Noor Jehan Saujauddin, Kevin Davidson, Esther P.Y. Chen","doi":"10.31399/asm.edfa.2020-3.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p004","url":null,"abstract":"\u0000 Three case studies involving 14 nm SRAM technology show how progressive FIB cross-sectioning and top-down analysis can be supplemented with nanoprobing and TEM tomography to determine the root cause of failure. In the first case, the memory failure is traced to an abnormal gate profile. In the second case, the failure is attributed to a metal line short, and in the third case, a gate defect.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126291257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved Signal Detection Sensitivity for High Resolution Imaging in Scanning Acoustic Tomography 扫描声层析成像中高分辨率成像信号检测灵敏度的改进
EDFA Technical Articles Pub Date : 2020-08-01 DOI: 10.31399/asm.edfa.2020-3.p028
Hiroki Mitsuta, T. Takezaki, K. Sakai, Kenta Sumikawa, Masakatsu Murai, Kotaro Kikukawa
{"title":"Improved Signal Detection Sensitivity for High Resolution Imaging in Scanning Acoustic Tomography","authors":"Hiroki Mitsuta, T. Takezaki, K. Sakai, Kenta Sumikawa, Masakatsu Murai, Kotaro Kikukawa","doi":"10.31399/asm.edfa.2020-3.p028","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p028","url":null,"abstract":"\u0000 Scanning acoustic tomography (SAT) is widely used to detect defects such as voids and delamination in electronic devices. In this article, the authors explain how they improved the spatial resolution and detection sensitivity of SAT by switching from a conventional piezoelectric probe to a capacitive micromachined ultrasound transducer (CMUT) and by using pulse compression signal processing. They also present examples showing how the improvement makes it possible to detect very small defects in multilayer stacks and BGA packages whether in through-transmission or reflection imaging mode.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133226880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Innovative Puck Design for the Mechanical Cross-Sectioning and Subsequent Analysis of Semiconductor Packaged Samples in Failure Analysis 失效分析中半导体封装样品的机械截面和后续分析的创新Puck设计
EDFA Technical Articles Pub Date : 2020-05-01 DOI: 10.31399/asm.edfa.2020-2.p004
F. Khatkhatay, P. S. Pichumani
{"title":"Innovative Puck Design for the Mechanical Cross-Sectioning and Subsequent Analysis of Semiconductor Packaged Samples in Failure Analysis","authors":"F. Khatkhatay, P. S. Pichumani","doi":"10.31399/asm.edfa.2020-2.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-2.p004","url":null,"abstract":"\u0000 The causes of failure in flip-chip packaged devices are often found at the interface between the die and package. Exposing the site of interest usually entails some form of mechanical cross-sectioning with the sample embedded in an epoxy puck. This article brings attention to some of the drawbacks with the current approach and presents a solution in the form of a redesigned puck. As test results show, the new puck significantly reduces polishing time, and when cast with a conductive epoxy, minimizes charging artifacts and image distortion during SEM analysis. It also facilitates easy sample removal for subsequent analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123470094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combined SCM and Nanoprobing Study of Resistive Fails on SOI FinFET Devices SOI FinFET器件电阻性失效的单片机与纳米探测相结合研究
EDFA Technical Articles Pub Date : 2020-05-01 DOI: 10.31399/asm.edfa.2020-2.p022
Lucile C. Teague Sheridan, D. Nedeau
{"title":"Combined SCM and Nanoprobing Study of Resistive Fails on SOI FinFET Devices","authors":"Lucile C. Teague Sheridan, D. Nedeau","doi":"10.31399/asm.edfa.2020-2.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-2.p022","url":null,"abstract":"\u0000 Scanning capacitance microscopy (SCM) and nanoprobing are key tools for isolating and understanding transistor level fails. In this case study, SCM and nanoprobing are used to determine the electrical characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128173182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Biologically Inspired Approach to Interception 生物学启发的拦截方法
EDFA Technical Articles Pub Date : 2020-05-01 DOI: 10.31399/asm.edfa.2020-2.p016
Frances S. Chance
{"title":"A Biologically Inspired Approach to Interception","authors":"Frances S. Chance","doi":"10.31399/asm.edfa.2020-2.p016","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-2.p016","url":null,"abstract":"\u0000 This article presents a control model that may have application to automated wafer-level die testing and characterization. Mimicking the behavior of a dragonfly in pursuit of prey, the model implements a form of proportional navigation that optimizes interception trajectories based on feedforward error signals derived from image data.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126851100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic Precision Advanced Manufacturing for Digital Electronics 数字电子的原子精密先进制造
EDFA Technical Articles Pub Date : 2020-02-01 DOI: 10.31399/asm.edfa.2020-1.p004
D. Ward, S. Schmucker, E. Anderson, E. Bussmann, L. Tracy, T. Lu, L. Maurer, A. Baczewski, Deanna Campbell, M. Marshall, S. Misra
{"title":"Atomic Precision Advanced Manufacturing for Digital Electronics","authors":"D. Ward, S. Schmucker, E. Anderson, E. Bussmann, L. Tracy, T. Lu, L. Maurer, A. Baczewski, Deanna Campbell, M. Marshall, S. Misra","doi":"10.31399/asm.edfa.2020-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p004","url":null,"abstract":"\u0000 The ability to place atoms one by one at specific atomic sites was first used to create functioning electronic devices in the late 1990s. Since then, the process known as atomic precision advanced manufacturing (APAM) has been further developed and both academic and commercial interest in its potential has grown. This article describes the nuances of the process, explaining that it places dopants into silicon using surface chemistry, a mechanism not typically used in microfabrication. It also discusses ongoing efforts to develop more complex quantum devices using APAM techniques and outlines the challenges involved in interfacing APAM and CMOS devices on the same die.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128423798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Ebook Preview: STEM-in-SEM Imaging Techniques for Microelectronics Failure Analysis 电子书预览:微电子失效分析的STEM-in-SEM成像技术
EDFA Technical Articles Pub Date : 2020-02-01 DOI: 10.31399/asm.edfa.2020-1.p026
Jason Holm, B. Caplins
{"title":"Ebook Preview: STEM-in-SEM Imaging Techniques for Microelectronics Failure Analysis","authors":"Jason Holm, B. Caplins","doi":"10.31399/asm.edfa.2020-1.p026","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p026","url":null,"abstract":"\u0000 This article describes an ebook titled STEM-in-SEM: Introduction to Scanning Transmission Electron Microscopy for Microelectronics Failure Analysis, intended as an introductory tutorial for those with little or no transmission imaging experience and as a source of ideas for SEM users looking to expand the imaging and diffraction capabilities of their equipment.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116568514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ISTFA 2019 Highlights ISTFA 2019亮点
EDFA Technical Articles Pub Date : 2020-02-01 DOI: 10.31399/asm.edfa.2020-1.p030
{"title":"ISTFA 2019 Highlights","authors":"","doi":"10.31399/asm.edfa.2020-1.p030","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p030","url":null,"abstract":"\u0000 The 45th International Symposium for Testing and Failure Analysis (ISTFA 2019) was held in Portland, Oregon, November 10-14, 2019. This article gives a brief summary of the highlights and identifies key contributors to the event. It also includes highlights of panel discussions from the inaugural meeting of Women in Electronics Failure Analysis (WEFA) and the panel discussion \"What Does Artificial Intelligence Mean to Failure Analysis Engineers?\" The article concludes with a brief recap of each of the four User Group meetings that took place during the conference: Sample Prep, System on Package, FIB/Circuit Edit, and Nanoprobing.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114581948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信