发布求助
文献互助 智能选刊 最新文献

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)最新文献

筛选
英文 中文
Modular solar array flight experiment: A platform for rapid technology evaluation 模块化太阳能电池阵列飞行实验:快速技术评估平台
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355863
Nathan D. Gapp, B. Carpenter
{"title":"Modular solar array flight experiment: A platform for rapid technology evaluation","authors":"Nathan D. Gapp, B. Carpenter","doi":"10.1109/PVSC.2015.7355863","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355863","url":null,"abstract":"The need to test new space solar array systems within their combined effects operational environment persists. Previous flight experiments have characterized cell electrical behavior, yielding valuable degradation and performance information-at the cell level. Unfortunately, many space vehicles experience failures at a higher level of integration. The Air Force Research Laboratory (AFRL) continues to invest in advanced cell, string, and structural technologies for solar arrays, which must be validated as a complete assembly within the space environment. This paper outlines engineering objectives and flight configuration for the Modular Solar Array (MSA) flight experiment. MSA in this application serves as an experimental platform but was also designed to address the current, labor intensive practice of fabricating custom solar arrays. This is accomplished by standardizing the module's mechanical and electrical interfaces while retaining high photovoltaic cell packing factor. Commonality among modules facilitates rapid power system design, damaged module replacement and new technology insertion. As such this flight experiment has two principle thrusts: ground demonstration of the flexibility of modular architectures, and acquisition of string level performance data within a near earth orbit. The on-orbit data gathered will be compared to ground test data to improve confidence in scaling MSA for use on LEO, GEO spacecraft. **MSA is one of four experiment packages on STPSat-4, a free flying spacecraft ejected from the international space station. Launch is scheduled for late 2016.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124959663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of saharan dust on PV system yields in the tropical environment of barbados 撒哈拉沙尘对巴巴多斯热带环境下光伏系统产量的影响
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355980
Darlene Field, Thomas Rogers, A. Sealy
{"title":"The effect of saharan dust on PV system yields in the tropical environment of barbados","authors":"Darlene Field, Thomas Rogers, A. Sealy","doi":"10.1109/PVSC.2015.7355980","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355980","url":null,"abstract":"Saharan dust migration increases atmospheric dust concentrations in Barbados, which can settle onto solar photovoltaic (PV) module surfaces and reduce power output. Accumulation rates are further increased as systems are installed at lower tilts. Monthly yields of four commercial sized PV systems (greater than 100kWp) within the period February 2014 to January 2015 were obtained. These values were investigated during three periods, highest Saharan dust concentration, wet season and dry season, are investigated. Highest yields occurred during the dry season, which was also the period of lowest dust concentrations even though higher ambient temperatures were experienced.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126191407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Using computational simulation to model CdS/CdTe processing in close-space sublimation 利用计算模拟模拟近空间升华过程中CdS/CdTe的加工过程
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355792
Davis Hemenway, A. Nicholson, K. Barth, W. Sampath
{"title":"Using computational simulation to model CdS/CdTe processing in close-space sublimation","authors":"Davis Hemenway, A. Nicholson, K. Barth, W. Sampath","doi":"10.1109/PVSC.2015.7355792","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355792","url":null,"abstract":"Sublimation based processing has proven to be an efficient method for manufacturing thin film CdS/CdTe PV devices. Recent advancements in computational simulation have opened a door for comprehensive modeling and analysis of the many processes involved in creating a fully functional solar cell. Computational models have been developed for CdS, CdTe, CdCl2, and CuCl that include fluid mechanics, heat transfer, and chemical reactions. This modeling will allow manufacturers to evaluate source geometries, process temperatures, operating pressures, and film properties before committing money to developing hardware.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"551 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126192137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical study of surface-dependent performances of nano-scale solar cells 纳米尺度太阳能电池表面依赖性能的数值研究
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356113
Shih-Li Lin, Hung-Ruei Tseng, S. Hsu, Yin-Han Chen, C. Lin
{"title":"Numerical study of surface-dependent performances of nano-scale solar cells","authors":"Shih-Li Lin, Hung-Ruei Tseng, S. Hsu, Yin-Han Chen, C. Lin","doi":"10.1109/PVSC.2015.7356113","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356113","url":null,"abstract":"A numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125251519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Controlling the thermal impact of ns laser pulses for the preparation of the P2 interconnect by local phase transformation in CIGSe 在CIGSe中局部相变控制ns激光脉冲对P2互连制备的热影响
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355961
C. Schultz, M. Schule, K. Stelmaszczyk, M. Weizman, O. Gref, F. Friedrich, C. Wolf, C. Kaufmann, B. Rau, R. Schlatmann, F. Fink, B. Stegemann
{"title":"Controlling the thermal impact of ns laser pulses for the preparation of the P2 interconnect by local phase transformation in CIGSe","authors":"C. Schultz, M. Schule, K. Stelmaszczyk, M. Weizman, O. Gref, F. Friedrich, C. Wolf, C. Kaufmann, B. Rau, R. Schlatmann, F. Fink, B. Stegemann","doi":"10.1109/PVSC.2015.7355961","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355961","url":null,"abstract":"The thermal impact of nanosecond laser pulses was beneficially employed and well-controlled for the preparation of the P2 interconnect by local phase transformation (i.e., by drawing conductive lines rather than removing the material) in CIGSe mini-modules, which were demonstrated to outperform their conventionally needle-patterned counterparts. Conductivity and elemental composition of the scribed lines as well as the extent of the heat-affected area were analyzed, quantified and taken into account for achieving optimal CIGSe solar module performances. This approach opens new prospects for significant simplification of the serial interconnection, since the P2 und the P3 can be scribed simultaneously after deposition of both the CIGSe and the TCO layer.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125614889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Two-step photocarrier generation in InAs/GaAs quantum dot superlattice intermediate band solar cell InAs/GaAs量子点超晶格中间带太阳能电池的两步光载流子生成
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355810
T. Kada, Taizo Tanibuchi, S. Asahi, T. Kaizu, Y. Harada, T. Kita, R. Tamaki, Y. Okada, K. Miyano
{"title":"Two-step photocarrier generation in InAs/GaAs quantum dot superlattice intermediate band solar cell","authors":"T. Kada, Taizo Tanibuchi, S. Asahi, T. Kaizu, Y. Harada, T. Kita, R. Tamaki, Y. Okada, K. Miyano","doi":"10.1109/PVSC.2015.7355810","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355810","url":null,"abstract":"We studied the two-step photon absorption (TSPA) process in InAs/GaAs quantum-dot superlattice (QDSL) solar cells. The photoluminescence (PL) and its excitation spectrum (PLE) showed the contribution of the higher excited states (ESs) forming the miniband of the QDSLs above the inhomogeneously distributed ground states (GSs). TSPA of sub- bandgap photons efficiently occurs when electrons are pumped from the valence band (VB) to the higher ESs. When the higher ESs were resonantly excited, the superlinear excitation power dependence of the PL intensity appeared. Moreover, time-resolved PL showed that the electron lifetime is extended. These results demonstrate that the excited electron and hole separately relax into QDSLs, and thereby, enhancing the second sub-bandgap absorption.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"819 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127018992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Using minority carrier lifetime measurement to determine saw damage characteristics on Si wafer surfaces 用少数载流子寿命测量法测定硅片表面锯损伤特性
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355744
B. Sopori, S. Devayajanam, P. Basnyat
{"title":"Using minority carrier lifetime measurement to determine saw damage characteristics on Si wafer surfaces","authors":"B. Sopori, S. Devayajanam, P. Basnyat","doi":"10.1109/PVSC.2015.7355744","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355744","url":null,"abstract":"The damage on the Si wafer surfaces, caused by ingot cutting, is determined from measurement of minority carrier lifetime (τeff). Samples are sequentially etched to remove thin layers from each surface and lifetime is measured after each etch step. The thickness-removed at which the lifetime reaches a peak value corresponds to the damage depth. This technique also allows the depth distribution of the damage to be quantified in terms of surface recombination velocity (SRV). An accurate measurement of τeff requires corrections to optical reflection, and transmission to account for changes in the surface morphology and in the wafer thickness.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"202 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127031655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Back contact band offset study of Mo-CZTS based solar cell structure by using XPS/UPS techniques 利用XPS/UPS技术研究Mo-CZTS基太阳能电池结构的背接触带偏移
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355623
T. Dhakal, S. Harvey, M. Van Hest, G. Teeter
{"title":"Back contact band offset study of Mo-CZTS based solar cell structure by using XPS/UPS techniques","authors":"T. Dhakal, S. Harvey, M. Van Hest, G. Teeter","doi":"10.1109/PVSC.2015.7355623","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355623","url":null,"abstract":"The back contact issues of Cu2ZnSnS4 (CZTS) solar cells are rarely studied. The conventional back contact layers used for CZTS are molybdenum (Mo) and moly-disulfide (MoS2). In this paper, the band offset at the Mo/MoS2 interface is reported. The Mo/MoS2 interface was formed by annealing Mo foil in a sulfur rich ambient. XPS/UPS spectra were then obtained without exposing the sample to ambient atmosphere. The valence band maxima (VBM) and the core level binding energies were obtained to estimate the band alignment. Our results showed that a Schottky junction was formed at the Mo/MoS2 interface with a barrier height of 0.36eV. The valence band maximum at the interface was 0.84eV and the corresponding band bending was 0.11 eV at the interface. A band diagram of the Mo/MoS2 interface created with these values showed that the formation of MoS2 between Mo and CZTS layer would not be a barrier to the holes at least at the Mo-side of the Mo/MoS2/CZTS interface.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114938254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Efficiency enhancement in Cu2ZnSnS4 solar cells with silica nanoparticles embedded in absorber layer 吸收层中嵌入纳米二氧化硅提高Cu2ZnSnS4太阳能电池效率
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355798
Balakrishna Ananthoju, Sundara Murthy Mopurisetty, H. Tyagi, D. Bahadur, N. Medhekar, S. Ganguly, M. Aslam
{"title":"Efficiency enhancement in Cu2ZnSnS4 solar cells with silica nanoparticles embedded in absorber layer","authors":"Balakrishna Ananthoju, Sundara Murthy Mopurisetty, H. Tyagi, D. Bahadur, N. Medhekar, S. Ganguly, M. Aslam","doi":"10.1109/PVSC.2015.7355798","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355798","url":null,"abstract":"Light trapping is essential to lower transmission losses in thin-film solar cells, particularly for wavelengths where the absorption is inefficient. We have embedded silica nanoparticles into a CZTS absorber layer resulting in localized as well as scattering field enhancement. UV-Vis absorption measurements show position (depth in the absorber layer) dependent improvement in the optical absorption with incorporation of silica nanoparticles; this has been explained using finite-difference-time-domain (FDTD) calculations of Mie scattering. The optical enhancement in turn leads to efficiency improvement as seen from electrical measurements; this has a slightly different position dependence that can also be understood theoretically. We observe maximal efficiency improvement, of about 21% compared to devices without nanoparticles (reference cell efficiency ~ 4.13% and for particles at middle ~ 5%), when nanoparticles are placed at the middle of the absorber layer.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115016704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructure of hydrogenated amorphous silicon layers studied by Spectroscopic Ellipsometry for the surface passivation in heterojunction solar cells 用椭圆偏振光谱法研究了异质结太阳能电池表面钝化过程中氢化非晶硅层的微观结构
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356329
Wanwu Guo, Liping Zhang, Jian Bao, Fanying Meng, Yifeng Chen, E. Lee, Zhiqiang Feng, P. Verlinden, Zhengxin Liu
{"title":"Microstructure of hydrogenated amorphous silicon layers studied by Spectroscopic Ellipsometry for the surface passivation in heterojunction solar cells","authors":"Wanwu Guo, Liping Zhang, Jian Bao, Fanying Meng, Yifeng Chen, E. Lee, Zhiqiang Feng, P. Verlinden, Zhengxin Liu","doi":"10.1109/PVSC.2015.7356329","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356329","url":null,"abstract":"The defect scatter interval (S<sub>t</sub>) of a-Si:H/c-Si interface and void concentration (C<sub>v</sub>) of a-Si:H were analyzed by Spectroscopic Ellipsometry (S<sub>E</sub>). The passivation performance of a-Si:H layers in SHJ solar cells was not only affected by the conductivity, but more importantly, it was strongly governed by the hydrogen content (C<sub>H</sub>) in a-Si:H layers. In addition, the microstructure deduced from SE was in perfect accordance with the results revealed by TEM technique. Then, an implied open circuit voltage (V<sub>oc</sub>,i<sub>m</sub>) of 732mV was obtained when S<sub>t</sub> was about 7fs and CH around 7 at.%.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122378029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信