用椭圆偏振光谱法研究了异质结太阳能电池表面钝化过程中氢化非晶硅层的微观结构

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI:10.1109/PVSC.2015.7356329

Wanwu Guo, Liping Zhang, Jian Bao, Fanying Meng, Yifeng Chen, E. Lee, Zhiqiang Feng, P. Verlinden, Zhengxin Liu

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引用次数: 0

摘要

利用椭圆偏振光谱(SE)分析了a-Si:H/c-Si界面的缺陷散射间隔(St)和a-Si:H的空洞浓度(Cv)。SHJ太阳能电池中a-Si:H层的钝化性能不仅受电导率的影响，更重要的是受a-Si:H层中氢含量(CH)的强烈支配。此外，电镜分析结果与透射电镜分析结果吻合较好。然后，当St约为7fs, CH约为7at .%时，得到了732mV的隐含开路电压(Voc,im)。

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Microstructure of hydrogenated amorphous silicon layers studied by Spectroscopic Ellipsometry for the surface passivation in heterojunction solar cells

The defect scatter interval (S_t) of a-Si:H/c-Si interface and void concentration (C_v) of a-Si:H were analyzed by Spectroscopic Ellipsometry (S_E). The passivation performance of a-Si:H layers in SHJ solar cells was not only affected by the conductivity, but more importantly, it was strongly governed by the hydrogen content (C_H) in a-Si:H layers. In addition, the microstructure deduced from SE was in perfect accordance with the results revealed by TEM technique. Then, an implied open circuit voltage (V_oc,i_m) of 732mV was obtained when S_t was about 7fs and CH around 7 at.%.

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2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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