2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)最新文献

Design optimizations for a lens-to-channel waveguide solar concentrator 透镜-通道波导太阳能聚光器的设计优化

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355764

Yuxiao Liu, R. Huang, C. Madsen

引用次数: 1

Modeling of silicon solar cells voltage increase on localized emitter area approach 基于局部发射极面积法的硅太阳能电池电压升高建模

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355755

P. Teng, Xinrui An, A. To, A. Barnett

引用次数: 1

Analysis of copper penetration in selective-emitter silicon solar cells using laser ablation inductively-coupled plasma mass spectrometry 激光烧蚀电感耦合等离子体质谱法分析铜在选择性发射极硅太阳能电池中的渗透

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355881

J. Colwell, A. Lennon

引用次数: 0

Modeling the performance of amorphous silicon photovoltaic modules for different geographical locations in North-America 模拟非晶硅光伏组件在北美不同地理位置的性能

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355995

A. Virtuani, A. Skoczek, D. Strepparava

{"title":"Modeling the performance of amorphous silicon photovoltaic modules for different geographical locations in North-America","authors":"A. Virtuani, A. Skoczek, D. Strepparava","doi":"10.1109/PVSC.2015.7355995","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355995","url":null,"abstract":"In this work we use and further elaborate a previously proposed approach which models the energy performance of an amorphous silicon (a-Si) PV module, including the well-known Staebler-Wronsky effect (typical for this technology). The extensions of the model to cover geographical locations representative of different climatic zones in North America (Mexico City, New Orleans, Seattle, and Fort St. John BC), using as solar and meteorological input parameters time series provided by GeoModel, shows that the model can be used to describe, the energy performance of a-Si and its very peculiar seasonal pattern. In addition it further reinforces the idea that this technology is more suited to warmer climates (SWE) and to latitudes (in the northern hemisphere) between 0 and 45°, due to the considerable spectral losses (on sunny days during which the most energy is produced) for this technology in winter time at high latitudes. Further, we show that for each site we are able to decouple spectral and SW effects, which are very specific to this technology, and act on similar time phases. SWE effects become more significant for warmer climates (Mexico City, New Orleans), whereas the impact of spectral losses are considerable at high latitudes (Seattle, Fort St John) in winter time.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128426167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Assessing the accuracy of imaging techniques for defect characterization on thin film solar cells 薄膜太阳能电池缺陷表征成像技术的准确性评估

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7356385

A. Vetter, Bernhard Hofbeck, P. Kubis, C. Brabec

引用次数: 0

Ion implanted screen printed N-type solar cell with tunnel oxide passivated back contact 隧道氧化钝化后接触离子注入网印n型太阳能电池

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/pvsc.2015.7356147

A. Upadhyaya, Y. Ok, E. Chang, V. Upadhyaya, Keeya Madani, K. Tate, Eunhwan Cho, B. Rounsaville, V. Chandrasekaran, V. Yelundur, Atul Gupta, A. Rohatgi

{"title":"Ion implanted screen printed N-type solar cell with tunnel oxide passivated back contact","authors":"A. Upadhyaya, Y. Ok, E. Chang, V. Upadhyaya, Keeya Madani, K. Tate, Eunhwan Cho, B. Rounsaville, V. Chandrasekaran, V. Yelundur, Atul Gupta, A. Rohatgi","doi":"10.1109/pvsc.2015.7356147","DOIUrl":"https://doi.org/10.1109/pvsc.2015.7356147","url":null,"abstract":"This paper shows the results and the limitations of a 21% N-Cz 239cm2 screen printed cell with blanket p+ and n+. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on the back side which can overcome those limitations. Since both the doped n+ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced resulting in much higher Voc. Process optimization resulted in high iVoc of 728mV on the symmetric structures. The un-metallized cell structure with Al2O3/SiN passivated lightly doped p+ emitter and a tunnel oxide/n+ poly back also gave high iVoc of 727mV. The finished screen-printed 132cm2 device gave a Voc of 683mV, Jsc of 39.4mA/cm2, FF of 77.6% and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114812310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Photoluminescence of Crystalline cDtE double heterostructures grown by MBE MBE生长cDtE晶体双异质结构的光致发光研究

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7356023

K. Zaunbrecher, P. Dippo, D. Kuciauskas, T. Gessert, T. Barnes, M. Edirisooriya, P. A. R. D. Jayathilaka, O. S. Ogedengbe, T. Myers

引用次数: 0

Advanced smart grid distribution testing 先进的智能电网配电测试

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355984

R. Bravo, V. Tran, James Hernandez

{"title":"Advanced smart grid distribution testing","authors":"R. Bravo, V. Tran, James Hernandez","doi":"10.1109/PVSC.2015.7355984","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355984","url":null,"abstract":"This paper will present the design of SCE's Smart Grid Test Facility (SGTF) and equipment test. This facility can be used to test, demonstrate, and validate utility distribution equipment performance before, during, and/or after their installation in the grid. This test facility's voltage, frequency, real power, and reactive power will be completely controlled where the equipment's automation, protection, and communications performance can be fully evaluated. This paper will provide the following additional information. First, it will provide a layout of the two distribution circuits in this facility with the equipment that will be installed to support the testing. Additionally, this paper will provide an overview of various tests that will be performed at SGTF to assess equipment performance. Furthermore, it will provide the ability to test automation and protection schemes that are otherwise prohibited to perform in the field. Finally, it will provide recommendations on additional uses of this facility such as training, installation procedures, volt/VAR control schemes, and communications. This facility will provide us the ability to pre-test pilot or new equipment without adversely affecting or disturbing customers.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124860277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and characterization of BaSi2 films on Ge(111) substrates by molecular beam epitaxy 基于分子束外延的Ge(111)衬底BaSi2薄膜的制备与表征

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355914

R. Takabe, K. Toko, K. Hara, N. Usami, T. Suemasu

引用次数: 1

Study on attached PV roof's temperature with FEM simulation 附着式光伏屋顶温度的有限元模拟研究

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI: 10.1109/PVSC.2015.7355817

Yunlin Sun, Siming Chen, Shuquan Chen, Hui Shen

引用次数: 1