Ion implanted screen printed N-type solar cell with tunnel oxide passivated back contact

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-12-17 DOI:10.1109/pvsc.2015.7356147

A. Upadhyaya, Y. Ok, E. Chang, V. Upadhyaya, Keeya Madani, K. Tate, Eunhwan Cho, B. Rounsaville, V. Chandrasekaran, V. Yelundur, Atul Gupta, A. Rohatgi

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引用次数: 4

Abstract

This paper shows the results and the limitations of a 21% N-Cz 239cm² screen printed cell with blanket p⁺ and n⁺. In addition, we show the properties and impact of tunnel oxide capped with doped n⁺ polysilicon and metal on the back side which can overcome those limitations. Since both the doped n⁺ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced resulting in much higher V_oc. Process optimization resulted in high iV_oc of 728mV on the symmetric structures. The un-metallized cell structure with Al₂O₃/SiN passivated lightly doped p⁺ emitter and a tunnel oxide/n⁺ poly back also gave high iV_oc of 727mV. The finished screen-printed 132cm² device gave a V_oc of 683mV, J_sc of 39.4mA/cm², FF of 77.6% and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.

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隧道氧化钝化后接触离子注入网印n型太阳能电池

本文介绍了一种具有p+和n+覆盖层的21% n - cz 239cm2丝网印刷电池的结果和局限性。此外，我们还展示了在背面掺杂n+多晶硅和金属的隧道氧化物的性能和影响，可以克服这些限制。由于掺杂的n+层和金属触点都在硅晶片的外部，因此Jo急剧减少，从而导致更高的Voc。工艺优化后，对称结构的iVoc高达728mV。采用Al2O3/SiN钝化轻掺杂p+发射极和隧道氧化物/n+聚背的非金属化电池结构也获得了727mV的高iVoc。完成的132cm2丝网印刷器件的Voc为683mV, Jsc为39.4mA/cm2, FF为77.6%，效率为20.9%。电池分析表明，选择性发射极的实现可以提供更高的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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