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2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)最新文献

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Fabrication of 40 µm thin silicon solar cells with different crystal orientation by SLiM-cut process 采用SLiM-cut工艺制备不同晶体取向的40µm薄硅太阳能电池
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355742
Teng-Yu Wang, Chien-Hsun Chen, Sung-Yu Chen, C. Du
{"title":"Fabrication of 40 µm thin silicon solar cells with different crystal orientation by SLiM-cut process","authors":"Teng-Yu Wang, Chien-Hsun Chen, Sung-Yu Chen, C. Du","doi":"10.1109/PVSC.2015.7355742","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355742","url":null,"abstract":"Thin silicon foils with two different crystal orientation were fabricated by SLiM-cut method. The thickness of the <;100> and <;111> foils are 45 μm and 33 μm, respectively. The surface quality was compared in this study. The <;111> foil have smoother surface than the <;100> foil. 4cm2 thin silicon solar cells with heterojunction structure were fabricated. The efficiency was found to be 10.74% and 12.81% for the <;100> and <;111> solar cell, respectively. The surface quality of the silicon foils was found to affect the solar cell character. However, the Voc of <;100> solar cell is higher than <;111> solar cell. It was believed that the local epitaxial occur when the amorphous silicon was deposited on the <;111> surface. The increasing of dangling bonds will become the recombination center and reduced the Voc of solar cell.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"175 1-3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134130848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics 用于下一代硅量子点光伏的硼磷掺杂的高硅含量SRO/SiO2双层超晶格
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355967
T. Yang, K. Nomoto, Ziyun Lin, Lingfeng Wu, B. Puthen-Veettil, Tian Zhang, X. Jia, G. Conibeer, I. Perez-Wurfl
{"title":"High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics","authors":"T. Yang, K. Nomoto, Ziyun Lin, Lingfeng Wu, B. Puthen-Veettil, Tian Zhang, X. Jia, G. Conibeer, I. Perez-Wurfl","doi":"10.1109/PVSC.2015.7355967","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355967","url":null,"abstract":"Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133895893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modified Silicon nanotips with improved carrier lifetime by using solution process for efficient solar cells applications 利用溶液法改进载流子寿命的硅纳米尖在高效太阳能电池中的应用
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356318
S. Thiyagu, Hong-Jhang Syu, Chen-Chih Hsueh, Chien-Ting Liu, Song-ting Yang, Ching-Fuh Lin
{"title":"Modified Silicon nanotips with improved carrier lifetime by using solution process for efficient solar cells applications","authors":"S. Thiyagu, Hong-Jhang Syu, Chen-Chih Hsueh, Chien-Ting Liu, Song-ting Yang, Ching-Fuh Lin","doi":"10.1109/PVSC.2015.7356318","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356318","url":null,"abstract":"In this work, a simple solution process (metal-assisted wet chemical etching [MacEtch] method) is used to fabricate high-density silicon nanohole (SiNH) arrays on n-type wafer. SiNH arrays generally produce a large surface-area-to-volume ratio, so that aid for strong light trapping effect between the nanostructures causes high absorption and charge collection via the formation of a core-sheath p-n junction. However, the photogenerated excited carriers are easily trapped by high-density surface defects due to higher surface area prolonging to depth of nanohole (NH). To reduce the surface defects and metal contamination of SiNHs formed by metal-catalyst etching, it is important to further proceed to feasible simple solution treatment. Applying the chemical polishing etching (CPE) treatment to SiNH surface leads to smooth and contamination-free surface. In addition, all the processes mentioned here are energy and cost-efficient.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132960081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field demonstration of using advanced PV inverter functionality to mitigate the impacts of high-penetration PV grid integration on the distribution system 现场演示使用先进的光伏逆变器功能来减轻高渗透光伏并网对配电系统的影响
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356169
B. Mather, Araya Gebeyehu
{"title":"Field demonstration of using advanced PV inverter functionality to mitigate the impacts of high-penetration PV grid integration on the distribution system","authors":"B. Mather, Araya Gebeyehu","doi":"10.1109/PVSC.2015.7356169","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356169","url":null,"abstract":"This paper describes a field demonstration that was completed to show the ability of currently installed PV inverters to implement advanced PV inverter functionality and that such functionality was effective at reducing the voltage-related PV impacts of high-penetration PV integration. A distribution circuit was instrumented and then tested for a two week period using off-unity power factor operation. Specifically, an inductive power factor of -0.95 was demonstrated. The results show that the PV inverters were capable of such operation and that the use of off-unity power factor operation was highly effective at reducing the voltage-related impacts of the PV systems interconnected to the circuits used in the demonstration. The impacts of using off-unity power factor operation - resulting in additional reactive current flow on the distribution circuit - are also presented and analyzed.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130693926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Ultraviolet radiation round-robin testing of various backsheets for photovoltaic modules 光伏组件各种背板的紫外线辐射循环测试
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355603
M. Koehl, A. Ballion, Yu-Hsien Lee, Hung-Sen Wu, Kurt P. Scott, S. Glick, P. Hacke, H. Koo
{"title":"Ultraviolet radiation round-robin testing of various backsheets for photovoltaic modules","authors":"M. Koehl, A. Ballion, Yu-Hsien Lee, Hung-Sen Wu, Kurt P. Scott, S. Glick, P. Hacke, H. Koo","doi":"10.1109/PVSC.2015.7355603","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355603","url":null,"abstract":"Durability testing of materials exposed to natural weathering requires testing of the ultraviolet (UV) stability, especially for polymeric materials. The type approval testing of photovoltaic (PV) modules according to standards IEC 61215 and IEC 61646, which includes a so-called UV preconditioning test with a total UV dose of 15 kWh/m2, does not correspond to the real loads during lifetime. Between 3%-10% of the UV radiation has to be in the spectral range between 280 and 320 nm (UV-B) in the recent editions of the standards. However, the spectral distribution of the radiation source is very important because different samples show very individual spectral sensitivity for the radiation offered. Less than 6% of the intensity of solar radiation exists in the UV range. In the case of an increase of the intensity of the light source for accelerating the UV test, overheating of the samples would have to be prevented more rigorously and the temperature of the samples have to be measured to avoid misinterpretation of the test results..","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117327681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A stochastic model for Cu(InGa)(SeS)2 absorber growth during selenization/sulfization 硒化/硫化过程中Cu(InGa)(SeS)2吸收剂生长的随机模型
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356226
Robert J. Lovelett, W. Shafarman, R. Birkmire, B. Ogunnaike
{"title":"A stochastic model for Cu(InGa)(SeS)2 absorber growth during selenization/sulfization","authors":"Robert J. Lovelett, W. Shafarman, R. Birkmire, B. Ogunnaike","doi":"10.1109/PVSC.2015.7356226","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356226","url":null,"abstract":"The optical and electronic properties of Cu(InGa)(SeS)2 absorbers are functions of the gallium and sulfur fractions, defined as the mole fractions Ga/(In+Ga) and S/(Se+S). During absorber growth, through-film composition gradients arise, and these gradients affect the photovoltaic performance of the solar cell. However, there has been little effort in quantitative prediction of the through-film composition. In this work, we present a stochastic model to simulate film growth during selenization and sulfization processes. Our goal is to predict the through-film composition of a Cu(InGa)(SeS)2 absorber film, especially the gallium and sulfur gradients. Our model can predict the steep gradient in gallium that is observed during the selenization reaction and the gallium homogenization that occurs with the sulfurization reaction. Although the model requires a large number of parameters, we show how they can be estimated from simplifying assumptions and related to physical properties. We believe that this method is the first attempt to model explicitly the through-film composition of a Cu(InGa)(SeS)2 produced via selenization.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131036802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal processes driving laser-welding for module interconnection 驱动模块互连激光焊接的热过程
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356432
H. Schulte‐Huxel, S. Kajari-Schroder, R. Brendel
{"title":"Thermal processes driving laser-welding for module interconnection","authors":"H. Schulte‐Huxel, S. Kajari-Schroder, R. Brendel","doi":"10.1109/PVSC.2015.7356432","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356432","url":null,"abstract":"Laser welding of thin Al layers offers a silver-free and highly flexible option for the interconnection of Al metallized solar cells. Welding requires the melting of the Al layers in order to form a reliable electrical contact. Here, we investigate the process driving the melt front of the Al towards the interface between the two Al layer. In experiments we observe two different mechanisms depending on the thickness of the irradiated layer. In the case of Al layers thinner than 5 μm a melt-through of the Al-layer is observed, whereas for thicker layers thermal expansion causes a breakage of the surface and ejection of molten Al, which enables the contact formation. Using simulations based on finite element method we instigate the mechanisms leading to the different behavior. The simulations match the experimental results with the experimental measurement uncertainty. In case of thin layers, the simulation show that the process is limited by thermal diffusion. For thicker Al layers the onset of melting on the front side initiates the breakage of the surface and the ejection of the aluminum.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132820904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ antimony doping of CdTe CdTe的原位锑掺杂
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356365
M. Khan, V. Evani, V. Palekis, P. Bane, S. Collins, D. Morel, C. Ferekides
{"title":"In-situ antimony doping of CdTe","authors":"M. Khan, V. Evani, V. Palekis, P. Bane, S. Collins, D. Morel, C. Ferekides","doi":"10.1109/PVSC.2015.7356365","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356365","url":null,"abstract":"The effect of in-situ Antimony (Sb) doping on polycrystalline Cadmium Telluride (CdTe) deposited by Elemental Vapor Transport (EVT) is investigated. The presence of Sb in the film is verified by SIMS measurements. The film structures were studied by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) measurements. The Sb doped CdTe films were fabricated into solar cells and characterized by standard Current-Voltage (JV) and Spectral Response (SR) measurements. The performance of the cells did not reach the state-of-the-art level, however, VOC's up to 760 mV were observed without any post deposition Cu or CdCl2 heat treatment. Capacitance-Voltage (CV) measurements indicated a change in the p-type doping concentration (as high as 1016 cm-3) as a function of gas phase Cd/Te ratio and Sb concentration. 1-Photon TRPL measurements showed minority carrier lifetime, τ > 1ns for the films with the highest doping.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133514735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Single and multijunction solar cells with 1.0 eV Si-Ge-Sn junction 1.0 eV Si-Ge-Sn结的单结和多结太阳能电池
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356337
R. Roucka, A. Clark, B. Landini
{"title":"Single and multijunction solar cells with 1.0 eV Si-Ge-Sn junction","authors":"R. Roucka, A. Clark, B. Landini","doi":"10.1109/PVSC.2015.7356337","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356337","url":null,"abstract":"Recent development of Si-Ge-Sn ternary alloys offers an alternative to 1.0 eV bandgap materials for multijunction solar cells. Main advantages of these alloys are tunable gap energy and variable lattice parameter, which can be fitted into the existing designs, thus resulting in a lattice matched solution. Recent growth, optical and structural results from Si-Ge-Sn with ~ 1 eV gaps and lattice matched to Ge substrates are presented. Based on simple device models, prototype single and triple junction cells with SiGeSn junction have been fabricated. Device measurements show that the performance of Si-Ge-Sn material is comparable to other 1.0 eV semiconductors.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"175 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132269282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of spectrum-splitting dichroic mirrors for PV mirror tandem solar cells 光伏反射镜串联太阳能电池分光二向色镜的性能评价
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355761
Zhengshan J. Yu, K. Fisher, Z. Holman
{"title":"Evaluation of spectrum-splitting dichroic mirrors for PV mirror tandem solar cells","authors":"Zhengshan J. Yu, K. Fisher, Z. Holman","doi":"10.1109/PVSC.2015.7355761","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7355761","url":null,"abstract":"Single-junction solar cells are approaching their theoretical efficiency limit, and tandem or multi-junction architectures provide a route for further increasing efficiency. However, due to high material cost, these technologies have traditionally been restricted to high concentrations with the penalty of the loss of diffuse light in outdoor applications. We propose a new tandem concept called a “PVMirror” that makes use of the global spectrum. It utilizes PV cells as a three-in-one technology-they act as a concentrating mirror, spectrum splitter, and high-efficiency light-to-electricity converter. A key element of this technology is an effective spectrum-splitting dichroic mirror, and this paper evaluates three dichroic mirror designs. Prototype PVMirrors with these mirrors and silicon heterojunction solar cells were made, and their reflection and transmission spectra confirm the spectrum-splitting capability of the dichroic mirrors. Outdoor testing shows that reflected light is successfully concentrated to a focus at which the second sub-cell in the tandem is to be located.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132757511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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