{"title":"基于分子束外延的Ge(111)衬底BaSi2薄膜的制备与表征","authors":"R. Takabe, K. Toko, K. Hara, N. Usami, T. Suemasu","doi":"10.1109/PVSC.2015.7355914","DOIUrl":null,"url":null,"abstract":"We grow BaSi<sub>2</sub> films on Ge(111) substrates using various templates. First, we form 30 nm BaGe<sub>2</sub> templates by deposition of Ba on hot Ge, followed by molecular beam epitaxy (MBE) at 580 °e to form BaSi<sub>2</sub>. We succeed to grow a-axis-oriented BaSi<sub>2</sub>; however BaSi<sub>2</sub> is not a continuous film, and hence BaSi<sub>2</sub> is easily oxidized after exposed to air. Next, we grow 3 nm BaSi<sub>2</sub> template by solid phase epitaxy (SPE) with initial crystal nuclei BaSi<sub>2</sub> at 580 °C, followed by MBE at 580°C. As a result, we achieved highly [100]-oriented BaSi<sub>2</sub> continuous films.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication and characterization of BaSi2 films on Ge(111) substrates by molecular beam epitaxy\",\"authors\":\"R. Takabe, K. Toko, K. Hara, N. Usami, T. Suemasu\",\"doi\":\"10.1109/PVSC.2015.7355914\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We grow BaSi<sub>2</sub> films on Ge(111) substrates using various templates. First, we form 30 nm BaGe<sub>2</sub> templates by deposition of Ba on hot Ge, followed by molecular beam epitaxy (MBE) at 580 °e to form BaSi<sub>2</sub>. We succeed to grow a-axis-oriented BaSi<sub>2</sub>; however BaSi<sub>2</sub> is not a continuous film, and hence BaSi<sub>2</sub> is easily oxidized after exposed to air. Next, we grow 3 nm BaSi<sub>2</sub> template by solid phase epitaxy (SPE) with initial crystal nuclei BaSi<sub>2</sub> at 580 °C, followed by MBE at 580°C. As a result, we achieved highly [100]-oriented BaSi<sub>2</sub> continuous films.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7355914\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7355914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and characterization of BaSi2 films on Ge(111) substrates by molecular beam epitaxy
We grow BaSi2 films on Ge(111) substrates using various templates. First, we form 30 nm BaGe2 templates by deposition of Ba on hot Ge, followed by molecular beam epitaxy (MBE) at 580 °e to form BaSi2. We succeed to grow a-axis-oriented BaSi2; however BaSi2 is not a continuous film, and hence BaSi2 is easily oxidized after exposed to air. Next, we grow 3 nm BaSi2 template by solid phase epitaxy (SPE) with initial crystal nuclei BaSi2 at 580 °C, followed by MBE at 580°C. As a result, we achieved highly [100]-oriented BaSi2 continuous films.
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