基于局部发射极面积法的硅太阳能电池电压升高建模

P. Teng, Xinrui An, A. To, A. Barnett
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引用次数: 1

摘要

设计了一种限面积p-n结硅太阳电池,利用三维仿真器Quokka研究了限面积发射极对电池输出开路电压(VOC)和效率的影响。从测试结构中提取了发射极、表面和本体的复合特性,并通过建模得到了在有限面积结太阳能电池上可获得的电位。结果表明,当发射极面积减小且电压大于700mV时,该方法有助于提高VOC。结果还表明,在有限面积结太阳能电池上,存在一个能使效率达到最高的最佳发射极宽度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling of silicon solar cells voltage increase on localized emitter area approach
A limited area p-n junction silicon solar cell is designed and the effect of limited area emitter on the output open circuit voltage (VOC) and efficiency is studied by a 3-D simulator Quokka. The recombination property of emitter, surface and bulk are all extracted from the test structures and this paper reports potential voltage that can be achieved on the limited area junction solar cells by the modelling. The result indicates that this approach will help improve VOC when the emitter area is reduced and the voltage will be more than 700mV. The result also shows that there is an optimum emitter width for the highest efficiency on the limited area junction solar cell.
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