利用计算模拟模拟近空间升华过程中CdS/CdTe的加工过程

Davis Hemenway, A. Nicholson, K. Barth, W. Sampath
{"title":"利用计算模拟模拟近空间升华过程中CdS/CdTe的加工过程","authors":"Davis Hemenway, A. Nicholson, K. Barth, W. Sampath","doi":"10.1109/PVSC.2015.7355792","DOIUrl":null,"url":null,"abstract":"Sublimation based processing has proven to be an efficient method for manufacturing thin film CdS/CdTe PV devices. Recent advancements in computational simulation have opened a door for comprehensive modeling and analysis of the many processes involved in creating a fully functional solar cell. Computational models have been developed for CdS, CdTe, CdCl2, and CuCl that include fluid mechanics, heat transfer, and chemical reactions. This modeling will allow manufacturers to evaluate source geometries, process temperatures, operating pressures, and film properties before committing money to developing hardware.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"551 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Using computational simulation to model CdS/CdTe processing in close-space sublimation\",\"authors\":\"Davis Hemenway, A. Nicholson, K. Barth, W. Sampath\",\"doi\":\"10.1109/PVSC.2015.7355792\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sublimation based processing has proven to be an efficient method for manufacturing thin film CdS/CdTe PV devices. Recent advancements in computational simulation have opened a door for comprehensive modeling and analysis of the many processes involved in creating a fully functional solar cell. Computational models have been developed for CdS, CdTe, CdCl2, and CuCl that include fluid mechanics, heat transfer, and chemical reactions. This modeling will allow manufacturers to evaluate source geometries, process temperatures, operating pressures, and film properties before committing money to developing hardware.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"551 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7355792\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7355792","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

基于升华的加工已被证明是制造薄膜CdS/CdTe光伏器件的有效方法。计算模拟的最新进展为创建功能齐全的太阳能电池所涉及的许多过程的综合建模和分析打开了一扇门。计算模型已经为CdS、CdTe、CdCl2和CuCl开发,包括流体力学、传热和化学反应。这种建模将允许制造商在投入资金开发硬件之前评估源几何形状、工艺温度、操作压力和薄膜性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Using computational simulation to model CdS/CdTe processing in close-space sublimation
Sublimation based processing has proven to be an efficient method for manufacturing thin film CdS/CdTe PV devices. Recent advancements in computational simulation have opened a door for comprehensive modeling and analysis of the many processes involved in creating a fully functional solar cell. Computational models have been developed for CdS, CdTe, CdCl2, and CuCl that include fluid mechanics, heat transfer, and chemical reactions. This modeling will allow manufacturers to evaluate source geometries, process temperatures, operating pressures, and film properties before committing money to developing hardware.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信