在CIGSe中局部相变控制ns激光脉冲对P2互连制备的热影响

C. Schultz, M. Schule, K. Stelmaszczyk, M. Weizman, O. Gref, F. Friedrich, C. Wolf, C. Kaufmann, B. Rau, R. Schlatmann, F. Fink, B. Stegemann
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引用次数: 4

摘要

在CIGSe微型模块中,通过局部相变(即通过绘制导电线而不是去除材料)制备P2互连,纳秒激光脉冲的热影响得到了有益的利用和良好的控制,其性能优于传统的针状图案。为了实现最佳的CIGSe太阳能组件性能,对刻划线的电导率和元素组成以及热影响区域的范围进行了分析、量化和考虑。这种方法为显著简化串行互连开辟了新的前景,因为在沉积CIGSe和TCO层后可以同时刻录P2和P3。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Controlling the thermal impact of ns laser pulses for the preparation of the P2 interconnect by local phase transformation in CIGSe
The thermal impact of nanosecond laser pulses was beneficially employed and well-controlled for the preparation of the P2 interconnect by local phase transformation (i.e., by drawing conductive lines rather than removing the material) in CIGSe mini-modules, which were demonstrated to outperform their conventionally needle-patterned counterparts. Conductivity and elemental composition of the scribed lines as well as the extent of the heat-affected area were analyzed, quantified and taken into account for achieving optimal CIGSe solar module performances. This approach opens new prospects for significant simplification of the serial interconnection, since the P2 und the P3 can be scribed simultaneously after deposition of both the CIGSe and the TCO layer.
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