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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)最新文献

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0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS 0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs -拓展SiGe BiCMOS的视野
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992995
A. Joseph, D. Coolbaugh, D. Harame, G. Freeman, S. Subbanna, M. Doherty, J. Dunn, C. Dickey, D. Greenberg, R. Groves, M. Meghelli, A. Rylyakov, M. Sorna, O. Schreiber, D. Herman, T. Tanji
{"title":"0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS","authors":"A. Joseph, D. Coolbaugh, D. Harame, G. Freeman, S. Subbanna, M. Doherty, J. Dunn, C. Dickey, D. Greenberg, R. Groves, M. Meghelli, A. Rylyakov, M. Sorna, O. Schreiber, D. Herman, T. Tanji","doi":"10.1109/ISSCC.2002.992995","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992995","url":null,"abstract":"SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m. The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is improved to >200GHz in the 0.13/spl mu/m generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125567685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
740mW ADSL line driver for central office with 75dB MTPR 740mW ADSL线路驱动器，中央局75dB MTPR
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992242
F. Sabouri, R. Shariatdoust
{"title":"740mW ADSL line driver for central office with 75dB MTPR","authors":"F. Sabouri, R. Shariatdoust","doi":"10.1109/ISSCC.2002.992242","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992242","url":null,"abstract":"A bipolar ADSL line driver for central office achieves 75dB MTPR. Employing a single-active-termination topology, it has 710mW total dissipation including 20.4dBm delivered to the line. Class-AB biasing makes the 4mA quiescent current independent of process, temperature, and supply variations.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130596884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 1.2V 10b 20MSample/s non-binary successive approximation ADC in 0.13/spl mu/m CMOS 在0.13/spl mu/m CMOS中的1.2V 10b 20MSample/s非二进制逐次逼近ADC
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992993
Franz Kuttner
{"title":"A 1.2V 10b 20MSample/s non-binary successive approximation ADC in 0.13/spl mu/m CMOS","authors":"Franz Kuttner","doi":"10.1109/ISSCC.2002.992993","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992993","url":null,"abstract":"A successive-approximation ADC with non-binary code achieves 55dB SNR at sampling frequencies up to 20MHz. The converter, with on-chip driver for analog input and reference input, measures 0.08mm/sup 2/ in a standard 0.13/spl mu/m CMOS process and consumes 12mW from a single 1.2V supply.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128844911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 99
A 2.4 GHz 0.18 /spl mu/m CMOS self-biased cascode power amplifier with 23 dBm output power 输出功率为23dbm的2.4 GHz 0.18 /spl μ m CMOS自偏置级联码功率放大器
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992229
T. Sowlati, D. Leenaerts
{"title":"A 2.4 GHz 0.18 /spl mu/m CMOS self-biased cascode power amplifier with 23 dBm output power","authors":"T. Sowlati, D. Leenaerts","doi":"10.1109/ISSCC.2002.992229","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992229","url":null,"abstract":"A two-stage self-biased cascode power amplifier in 0.18 /spl mu/m CMOS process for Class 1 Bluetooth application provides 23 dBm output power with 31 dB gain and 42% PAE at 2.4 GHz. The power amplifier die occupies 0.46 mm/sup 2/.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122469851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
Noise cancelling in wideband CMOS LNAs 宽带CMOS LNAs中的噪声消除
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.993104
F. Bruccoleri, E. Klumperink, B. Nauta
{"title":"Noise cancelling in wideband CMOS LNAs","authors":"F. Bruccoleri, E. Klumperink, B. Nauta","doi":"10.1109/ISSCC.2002.993104","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.993104","url":null,"abstract":"A noise-cancelling technique in a wideband LNA achieves low noise figure (NF) and source impedance matching without global feedback. The 0.25 μm LNA provides <2.4 dB NF from 0.01-2 GHz, total voltage gain is 13.7 dB, -3 dB bandwidth is 0.01-1.6 GHz, S/sub 12/ is <-36 dB, and S/sub 11/ is <-10 dB. IIP2 is 12 dBm, and IIP3 is 0 dBm drawing 14 mA at 2.5 V.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131279664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 158
A DC-to-250 MHz current pre-amplifier with integrated photo-diodes in standard BiCMOS, for optical-storage systems 在标准BiCMOS中集成光电二极管的dc -250 MHz电流前置放大器，用于光存储系统
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.993082
G. de Jong, J. Bergervoet, J.H.A. Brekelmans, Janice Van Mil
{"title":"A DC-to-250 MHz current pre-amplifier with integrated photo-diodes in standard BiCMOS, for optical-storage systems","authors":"G. de Jong, J. Bergervoet, J.H.A. Brekelmans, Janice Van Mil","doi":"10.1109/ISSCC.2002.993082","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.993082","url":null,"abstract":"An optoelectronic IC contains pre-amplifiers and integrated photodiodes for optical-storage systems (CD, DVD, and DVR). The pre-amps exhibit 4.6 nV/4 Hz noise and the diodes have 0.25 pF junction-capacitance. The IC uses a standard 0.6 /spl mu/m BiCMOS process for a high-performance low-cost solution.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131838659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
A 1 V CMOS PLL designed in high-leakage CMOS process operating at 10-700 MHz 采用高漏电CMOS工艺设计的1 V锁相环，工作频率为10-700 MHz
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992223
R. Holzer
{"title":"A 1 V CMOS PLL designed in high-leakage CMOS process operating at 10-700 MHz","authors":"R. Holzer","doi":"10.1109/ISSCC.2002.992223","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992223","url":null,"abstract":"A PLL is fabricated in a 0.13 /spl mu/m logic process where leakage currents are high. The loop capacitor is implemented by a structure of poly and 9 metal layers. The VCO is implemented with common-mode feedback to compensate for leakage currents. Maximum VCO frequency is 1400 MHz. Typical power is 7 mW at 200 MHz. RMS jitter is 25.4 ps at 360 MHz.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127852721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability 高度集成的三频/四模SiGe BiCMOS射频到基带接收器，适用于具有GPS功能的无线CDMA/WCDMA/AMPS应用
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.993022
V. Aparin, P. Gazzerro, Jianjun J. Zhou, Bo Sun, S. Szabo, E. Zeisel, T. Segoria, S. Ciccarelli, C. Persico, C. Narathong, R. Sridhara
{"title":"A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability","authors":"V. Aparin, P. Gazzerro, Jianjun J. Zhou, Bo Sun, S. Szabo, E. Zeisel, T. Segoria, S. Ciccarelli, C. Persico, C. Narathong, R. Sridhara","doi":"10.1109/ISSCC.2002.993022","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.993022","url":null,"abstract":"A 0.5 μm SiGe BiCMOS single-chip receiver integrates three front-ends (LNA, RF-to-IF mixer, VGA) for the cellular, PCS/IMT and GPS frequency bands, a shared I/Q demodulator, IF VCO, and UHF LO buffers. It has 2.0 dB NF and -0.6 dBm IIP3 in the cellular CDMA mode and 2.3 dB NF and -7 dBm IIP3 in the PCS mode with <150 mW at 3 V.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114199798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Micromachined e-jet for IC chip cooling 用于IC芯片冷却的微机械e-jet
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992257
A. Tsung-Kuan, Chou, Khalil Najafi, M. Muller, L. P. Bernal, P. Washabaugh, Babak A. Parviz
{"title":"Micromachined e-jet for IC chip cooling","authors":"A. Tsung-Kuan, Chou, Khalil Najafi, M. Muller, L. P. Bernal, P. Washabaugh, Babak A. Parviz","doi":"10.1109/ISSCC.2002.992257","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992257","url":null,"abstract":"The authors present a micromachined acoustic ejector (MACE) chip which contains electrostatically-driven Helmholtz resonators that generate small air jets. A 1.6×1.6 cm/sup 2/ prototype contains 25 e-jets with 1 m/s measured velocity. Results show that a 15-jet device located ∼1 cm above a 100°C surface dissipates >6W/m/sup 2/ K. Future generations are being designed with higher jet velocity.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123464795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of a low-cost integrated 0.25 /spl mu/m CMOS Bluetooth SOC in 16.5 mm/sup 2/ silicon area 在16.5 mm/sup / 2/硅片面积上设计一种低成本集成0.25 /spl μ m CMOS蓝牙SOC
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI: 10.1109/ISSCC.2002.992953
J. Cheah, E. Kwek, E. Low, C. Quek, C. Yong, R. Enright, J. Hirbawi, A. Lee, Hongyu Xie, Long Wei, L. Luong, Jianping Pan, Shih-Tsung Yang, Walter Lau, Wai-Lim Ngai
{"title":"Design of a low-cost integrated 0.25 /spl mu/m CMOS Bluetooth SOC in 16.5 mm/sup 2/ silicon area","authors":"J. Cheah, E. Kwek, E. Low, C. Quek, C. Yong, R. Enright, J. Hirbawi, A. Lee, Hongyu Xie, Long Wei, L. Luong, Jianping Pan, Shih-Tsung Yang, Walter Lau, Wai-Lim Ngai","doi":"10.1109/ISSCC.2002.992953","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.992953","url":null,"abstract":"A complete 0.25 /spl mu/m CMOS SOC Bluetooth solution adopts a two-die in a single MCM chip packaging approach with minimum product cost as the most important design goal while maintaining competitive power consumption and RF performance.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121812079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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