高度集成的三频/四模SiGe BiCMOS射频到基带接收器，适用于具有GPS功能的无线CDMA/WCDMA/AMPS应用

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.993022

V. Aparin, P. Gazzerro, Jianjun J. Zhou, Bo Sun, S. Szabo, E. Zeisel, T. Segoria, S. Ciccarelli, C. Persico, C. Narathong, R. Sridhara

{"title":"高度集成的三频/四模SiGe BiCMOS射频到基带接收器，适用于具有GPS功能的无线CDMA/WCDMA/AMPS应用","authors":"V. Aparin, P. Gazzerro, Jianjun J. Zhou, Bo Sun, S. Szabo, E. Zeisel, T. Segoria, S. Ciccarelli, C. Persico, C. Narathong, R. Sridhara","doi":"10.1109/ISSCC.2002.993022","DOIUrl":null,"url":null,"abstract":"A 0.5 μm SiGe BiCMOS single-chip receiver integrates three front-ends (LNA, RF-to-IF mixer, VGA) for the cellular, PCS/IMT and GPS frequency bands, a shared I/Q demodulator, IF VCO, and UHF LO buffers. It has 2.0 dB NF and -0.6 dBm IIP3 in the cellular CDMA mode and 2.3 dB NF and -7 dBm IIP3 in the PCS mode with <150 mW at 3 V.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability\",\"authors\":\"V. Aparin, P. Gazzerro, Jianjun J. Zhou, Bo Sun, S. Szabo, E. Zeisel, T. Segoria, S. Ciccarelli, C. Persico, C. Narathong, R. Sridhara\",\"doi\":\"10.1109/ISSCC.2002.993022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 0.5 μm SiGe BiCMOS single-chip receiver integrates three front-ends (LNA, RF-to-IF mixer, VGA) for the cellular, PCS/IMT and GPS frequency bands, a shared I/Q demodulator, IF VCO, and UHF LO buffers. It has 2.0 dB NF and -0.6 dBm IIP3 in the cellular CDMA mode and 2.3 dB NF and -7 dBm IIP3 in the PCS mode with <150 mW at 3 V.\",\"PeriodicalId\":423674,\"journal\":{\"name\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2002.993022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.993022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 36

摘要

0.5 μm SiGe BiCMOS单芯片接收器集成了三个前端(LNA, RF-to-IF混频器，VGA)，用于蜂窝，PCS/IMT和GPS频段，共享I/Q解调器，中频压控振荡器和UHF低电平缓冲器。它在蜂窝CDMA模式下具有2.0 dB NF和-0.6 dBm IIP3，在3v < 150mw的PCS模式下具有2.3 dB NF和-7 dBm IIP3。

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A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability

A 0.5 μm SiGe BiCMOS single-chip receiver integrates three front-ends (LNA, RF-to-IF mixer, VGA) for the cellular, PCS/IMT and GPS frequency bands, a shared I/Q demodulator, IF VCO, and UHF LO buffers. It has 2.0 dB NF and -0.6 dBm IIP3 in the cellular CDMA mode and 2.3 dB NF and -7 dBm IIP3 in the PCS mode with <150 mW at 3 V.

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来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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