0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992995

A. Joseph, D. Coolbaugh, D. Harame, G. Freeman, S. Subbanna, M. Doherty, J. Dunn, C. Dickey, D. Greenberg, R. Groves, M. Meghelli, A. Rylyakov, M. Sorna, O. Schreiber, D. Herman, T. Tanji

引用次数: 6

Abstract

SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m. The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is improved to >200GHz in the 0.13/spl mu/m generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed.

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0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs -拓展SiGe BiCMOS的视野

SiGe BiCMOS是自推出0.5/spl μ m以来的第四代光刻技术。关键部件是sige基HBT，其性能(f/sub T/， f/sub MAX/)在0.13/spl mu/m一代中提高到>200GHz。综述了SiGe BiCMOS技术和产品应用的发展历程和未来发展方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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