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Proceedings of the 2nd IEEE Conference on Nanotechnology最新文献

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Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics 纳米厚界面层对10nm掺杂金属氧化物高k介电材料电性能的影响
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032240
Y. Kuo, J. Lu, P.C. Liu, F.M. Daby, J. Tewg
{"title":"Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics","authors":"Y. Kuo, J. Lu, P.C. Liu, F.M. Daby, J. Tewg","doi":"10.1109/NANO.2002.1032240","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032240","url":null,"abstract":"The 2 nm interface films formed between the 10 nm thin Hf- and Zr-doped tantalum oxide high k films and Si wafer were studied. Physical and chemical properties of the interface layer were investigated with respect to the bulk film preparation conditions. The interface layer properties do not influence the high k film's leakage current but affect the dielectric constant drastically.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132973650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Parallel-platform based numerical simulation of instabilities in nanoscale tunneling devices 基于并行平台的纳米隧道器件不稳定性数值模拟
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032279
C. T. Kelley, D. Woolard, P. Zhao, M. Kerr, M.I. Lasater
{"title":"Parallel-platform based numerical simulation of instabilities in nanoscale tunneling devices","authors":"C. T. Kelley, D. Woolard, P. Zhao, M. Kerr, M.I. Lasater","doi":"10.1109/NANO.2002.1032279","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032279","url":null,"abstract":"We present theoretical results on instability processes in nanoscale tunneling structures that were obtained from a computationally improved physics-based simulator. The results were obtained from a numerical implementation of the Wigner-Poisson electron transport model upon a parallel-computing platform. These investigations considered various forms of multi-barrier resonant tunneling structures (RTSs) and they were used to test the robustness of the new modeling code. This improved modeling tool is shown to be fast and efficient with the potential to facilitate complete and rigorous studies of this time-dependent phenomenon. This is important because it will allow for the study of RTSs embedded in realistic circuit configurations. Hence, this advanced simulation tool will allow for the detailed study of RTS devices coupled to circuits where numerical simulations in time and iterative numerical optimization over the circuit parameters are required. Therefore, this work will enable the future study of RTS-based circuits operating at very high frequencies.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122552777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Photovoltage spectroscopy and electroluminescence of ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices ZnSe/Cd/sub -x/ Zn/sub - 1-x/Se超晶格的光电压光谱和电致发光
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032221
E. N. Agafonov, A.N. Georgobiani, L. Lepnev, Yu. G. Sadofyev
{"title":"Photovoltage spectroscopy and electroluminescence of ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices","authors":"E. N. Agafonov, A.N. Georgobiani, L. Lepnev, Yu. G. Sadofyev","doi":"10.1109/NANO.2002.1032221","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032221","url":null,"abstract":"The ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices with non-doping layers, grown by molecular beam epitaxy, were investigated by electroluminescence and photovoltage spectroscopy. Green-blue electroluminescence from the quantum wells has been observed at 77 K and 293 K. Well-resolved peaks attributed to excitonic absorption, as well as photosensitivity bands corresponding to the Cd/sub x/Zn/sub 1-x/Se/ZnSe superlattice region and the ZnSe buffer layer, have been observed in photovoltaic measurements.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129275004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Search for minimum molecular programmable units 搜索最小分子可编程单元
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032280
J. Seminario, L. E. Cordova, P. Derosa
{"title":"Search for minimum molecular programmable units","authors":"J. Seminario, L. E. Cordova, P. Derosa","doi":"10.1109/NANO.2002.1032280","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032280","url":null,"abstract":"Molecular electronics can be developed if we are able to program a random arrangement of molecules or a field programmable molecular random array. The ansatz that small molecules can be programmed needs to be demonstrated, that means characterizing the smallest molecular system with programmable features. Current programs for the calculation of current-voltage characteristics of electronic circuits, needed for such demonstrations, are only able to predict single-valued characteristics. We present a procedure to incorporate our molecular physics procedures with a practical analysis of molecular circuits having strong non linearities.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117123946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Static buffered SET based logic gates 基于静态缓冲SET的逻辑门
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032295
C. Lageweg, S. Cotofana, S. Vassiliadis
{"title":"Static buffered SET based logic gates","authors":"C. Lageweg, S. Cotofana, S. Vassiliadis","doi":"10.1109/NANO.2002.1032295","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032295","url":null,"abstract":"In this paper we investigate single electron tunneling (SET) devices from the logic design perspective, using the SET tunnel junction's ability to control the transport of individual electrons. In SET technology, small circuits containing only 1 tunnel junction (passive circuits) can form compact circuits implementing complex functions, but suffer from strong feedback effects. To alleviate this problem a dynamic buffer was proposed. However, this dynamic buffer has a behavior similar to a flip-flop and requires additional control signals. Therefore we first propose in this paper a static SET active buffer. The proposed static buffer switches output values by transporting one electron only and operates on a DC supply voltage. Second, we combine the proposed buffer with a threshold gate and derive static buffered NAND and NOR gates. We demonstrate our approach by presenting simulation results for a small network of gates, proving that the gates function correctly under a fanout of 4.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127135536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
Analog circuit cell model based on single C/sub 60/ molecular transistor 基于单C/sub - 60/分子晶体管的模拟电路单元模型
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032228
Y. Wang, J. Jiang, Q. Cai
{"title":"Analog circuit cell model based on single C/sub 60/ molecular transistor","authors":"Y. Wang, J. Jiang, Q. Cai","doi":"10.1109/NANO.2002.1032228","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032228","url":null,"abstract":"In this paper, in the enlightenment of nanomechanical oscillations' experiment in single-C/sub 60/ transistor, utilizing improved shuttle mechanism for charge transfer in Coulomb blockade nanostructures, we give a new model of transistor based OD C/sub 60/ by combining the resistance with the spring, and simulate the I-V/sub ds/, where we find the Coulomb blockade and Coulomb staircase, and I-V/sub g/ characteristics, where we find periodical attenuation phenomenon. And on the basis of this transistor mechanism model, we construct a new model of an amplifier with the resistant load, and give the new small-signal equivalent circuit model. Here we solve master equation with the three-state model because of its simplicity and higher precision.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125934357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A silicon-oxide-silicon nanogap device structure 一种氧化硅-硅纳米隙器件结构
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032225
P. Lundgren, S. Bengtsson
{"title":"A silicon-oxide-silicon nanogap device structure","authors":"P. Lundgren, S. Bengtsson","doi":"10.1109/NANO.2002.1032225","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032225","url":null,"abstract":"Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128140212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Universally programmable intelligent matter summary 通用可编程智能物质摘要
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032276
B. MacLennan
{"title":"Universally programmable intelligent matter summary","authors":"B. MacLennan","doi":"10.1109/NANO.2002.1032276","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032276","url":null,"abstract":"We explain how a small set of molecular building blocks will allow the implementation of \"universally programmable intelligent matter,\" that is, matter whose structure, properties, and behavior can be programmed, quite literally, at the molecular level.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127520563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Optoelectronic properties of nanocrystalline tungsten oxide thin films 纳米氧化钨薄膜的光电特性
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032115
A. Jayatissa, S. Cheng
{"title":"Optoelectronic properties of nanocrystalline tungsten oxide thin films","authors":"A. Jayatissa, S. Cheng","doi":"10.1109/NANO.2002.1032115","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032115","url":null,"abstract":"Tungsten oxide (WO/sub 3/) is an important electronic material investigated for solid state sensors, electrochromic and optoelectronic devices. In this study, optoelectronic properties of nanocrystalline WO/sub 3/ thin films, prepared by vacuum evaporation followed by thermal annealing were investigated. The structural and optoelectronic properties were measured for systematically annealed samples in 100-600/spl deg/C range. It was found that the optical transmittance and electrical conductivity were varied in 10-80% range and 10/sup -3/- 10/sup -8/ (/spl Omega/.cm)/sup -1/ range, respectively, by change of annealing temperature. Study of surface and structural properties reveals that pronounced effect on properties can be made by annealing even at 100/spl deg/C. Results indicated that the properties Of WO/sub 3/ can be tuned by annealing process because of change of crystallinity from amorphous to nanomonocrystalline to polycrystalline structures.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123663683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel 子栅偏压对具有纳米沟道的肖特基势垒SOI mosfet工作的影响
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032226
Horng-Chih Lin, Meng-Fan Wang, F. Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S. Sze
{"title":"Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel","authors":"Horng-Chih Lin, Meng-Fan Wang, F. Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S. Sze","doi":"10.1109/NANO.2002.1032226","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032226","url":null,"abstract":"The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (>10/sup 9/) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122722039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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