Photovoltage spectroscopy and electroluminescence of ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices

Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI:10.1109/NANO.2002.1032221

E. N. Agafonov, A.N. Georgobiani, L. Lepnev, Yu. G. Sadofyev

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Abstract

The ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices with non-doping layers, grown by molecular beam epitaxy, were investigated by electroluminescence and photovoltage spectroscopy. Green-blue electroluminescence from the quantum wells has been observed at 77 K and 293 K. Well-resolved peaks attributed to excitonic absorption, as well as photosensitivity bands corresponding to the Cd/sub x/Zn/sub 1-x/Se/ZnSe superlattice region and the ZnSe buffer layer, have been observed in photovoltaic measurements.

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ZnSe/Cd/sub -x/ Zn/sub - 1-x/Se超晶格的光电压光谱和电致发光

用电致发光和光电压谱技术研究了用分子束外延生长的具有非掺杂层的ZnSe/Cd/sub x/Zn/sub 1-x/Se超晶格。在77 K和293 K下观察到量子阱发出的绿蓝色电致发光。在光电测量中观察到由激子吸收引起的高分辨峰，以及对应于Cd/sub x/Zn/sub 1-x/Se/ZnSe超晶格区和ZnSe缓冲层的光敏带。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2nd IEEE Conference on Nanotechnology

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